High Operating Temperature Detectors Research Articles

Surface leakage current reduction of InAsSb nBn MWIR HOT detector via hydrogen peroxide treatment

InAsSb nBn structure plays a key role in realizing high operating temperature (HOT) MWIR detectors. However, the AlAsSb layer, functioning as a barrier layer, can be rapidly oxidized during the pixel isolation process, forming undesirable oxides that can contribute to increase the surface leakage current. In this work, electrical and optical analysis were performed to investigate the role of the post-treatment process after pixel isolation step in reducing the oxidation and inhibiting the formation of unfavorable oxides closely related to the surface leakage currents. Our study shows that H2O2 post-treatment after the dry pixel isolation process can effectively reduce the barrier oxidation and suppress the formation of Sb2O5, greatly reducing the surface leakage current. Using the proposed post-treatment process, the dark current density of less than 1 × 10−6 A/cm2 was obtained at an applied bias of −0.3 V and 150 K, which is one order of magnitude lower than that of the InAsSb nBn device recently reported.

Mid-Wavelength Infrared nBn for HOT Detectors

Recently, new strategies to achieve high-operating-temperature (HOT) detectors have been proposed, including barrier structures such as nBn devices, unipolar barrier photodiodes, alternative materials such as superlattices, and multistage (cascade) infrared devices. In the case of nBn detectors, the barriers must be correctly engineered and correctly located in the device structure to achieve optimal performance. This paper presents the limitations of barrier unipolar devices and the progress in their development for HOT operation in the mid-wavelength infrared range. Their performance is compared with state-of-the-art HgCdTe photodiodes.

Mid-wavelength infrared type-II InAs/GaSb superlattice interband cascade photodetectors

Recently, a new strategy to achieve high-operating temperature (HOT) infrared photodetectors to include cascade devices and alternate materials such as type-II superlattices has been observed. Another method to reduce dark current is related to the limitation of the volume of detector material via a concept of a photon-trapping detector. The performance of an innovative HOT detector designing so-called interband (IB) cascade type-II MWIR InAs/GaSb superlattice detectors is presented. Detailed analysis of the detector’s performance (such as dark current, RA product, current responsivity, and response time) versus bias voltage and operating temperatures (220 to 400 K) is performed, pointing out the optimal working conditions. At the present stage of technology, the experimentally measured R0A values of the IB cascade type-II superlattice detectors at room temperature are higher than those predicted for HgCdTe photodiodes. It is shown that these HOT detectors have emerged as the competitors of HgCdTe photodetectors.

Modeling of HOT (111) HgCdTe MWIR detector for fast response operation

The paper reports on photoelectrical performance of the mid-wave infrared (MWIR) (111) HgCdTe high operating temperature detector for the fast response conditions. Detector structure was simulated with software APSYS by Crosslight Inc. The detailed analysis of the time response as a function of device architecture and applied voltage was performed pointing out optimal working conditions. The time response of the MWIR HgCdTe detector with 50 % cut-off wavelength of \(\lambda _{c} \approx 5.3\, \upmu \hbox {m}\) at \(T = 200\) K was estimated at the level of \(\tau _{s} \approx \) 2,500 ps for \(V = 100\) mV and series resistance \(R_{Series} = 510\,\Omega \). The series resistance’s reduction enables to reach \(\tau _{s}\approx 60\!-\!500\) ps.

Theory of multiple-stage interband photovoltaic devices and ultimate performance limit comparison of multiple-stage and single-stage interband infrared detectors

A theoretical framework for studying signal and noise in multiple-stage interband infrared photovoltaic devices is presented. The theory flows from a general picture of electrons transitioning between thermalized reservoirs. Making the assumption of bulk-like absorbers, we show how the standard semiconductor transport and recombination equations can be extended to the case of multiple-stage devices. The electronic noise arising from thermal fluctuations in the transition rates between reservoirs is derived using the Shockley-Ramo and Wiener-Khinchin theorems. This provides a unified noise treatment accounting for both the Johnson and shot noise. Using a Green's function formalism, we derive consistent analytic expressions for the quantum efficiency and thermal noise in terms of the design parameters and macroscopic material properties of the absorber. The theory is then used to quantify the potential performance improvement from the use of multiple stages. We show that multiple-stage detectors can achieve higher sensitivities for applications requiring a fast temporal response. This is shown by deriving an expression for the optimal number of stages in terms of the absorption coefficient and absorber thicknesses for a multiple-stage detector with short absorbers. The multiple-stage architecture may also be useful for improving the sensitivity of high operating temperature detectors in situations where the quantum efficiency is limited by a short diffusion length. The potential sensitivity improvement offered by a multiple-stage architecture can be judged from the product of the absorption coefficient, α, and diffusion length, Ln, of the absorber material. For detector designs where the absorber lengths in each of the stages are equal, the multiple-stage architecture offers the potential for significant detectivity improvement when αLn ≤ 0.2. We also explore the potential of multiple-stage detectors with photocurrent-matched absorbers. In this architecture, the absorbers are designed to absorb and collect an equal number of carriers in each stage. It is shown that for zero-bias operation, this design has a higher ultimate detectivity than a single-absorber device. Such improvements in detectivity are significant for material with αLn ≤ 0.5. Using the results derived for general values of αLn, we offer an outlook for multiple-stage detectors that utilize InAs/GaSb superlattice absorbers.

HOT infrared photodetectors

AbstractAt present, uncooled thermal detector focal plane arrays are successfully used in staring thermal imagers. However, the performance of thermal detectors is modest, they suffer from slow response and they are not very useful in applications requiring multispectral detection.Infrared (IR) photon detectors are typically operated at cryogenic temperatures to decrease the noise of the detector arising from various mechanisms associated with the narrow band gap. There are considerable efforts to decrease system cost, size, weight, and power consumption to increase the operating temperature in so-called high-operating-temperature (HOT) detectors. Initial efforts were concentrated on photoconductors and photoelectromagnetic detectors. Next, several ways to achieve HOT detector operation have been elaborated including non-equilibrium detector design with Auger suppression and optical immersion. Recently, a new strategies used to achieve HOT detectors include barrier structures such as nBn, material improvement to lower generation-recombination leakage mechanisms, alternate materials such as superlattices and cascade infrared devices. Another method to reduce detector’s dark current is reducing volume of detector material via a concept of photon trapping detector.In this paper, a number of concepts to improve performance of photon detectors operating at near room temperature are presented. Mostly three types of detector materials are considered — HgCdTe and InAsSb ternary alloys, and type-II InAs/GaSb superlattice. Recently, advanced heterojunction photovoltaic detectors have been developed. Novel HOT detector designs, so called interband cascade infrared detectors, have emerged as competitors of HgCdTe photodetectors.

Minority carrier lifetime in p-HgCdTe

High operating temperature (HOT) detector concepts using midwave infrared (MWIR) (x∼0.3) p-type HgCdTe operating at temperatures within the thermoelectric cooler range are of significant interest at the present time. However, it is apparent that much work remains to be done in the areas of material, diode passivation, and diode formation technologies before the “holy grail” of photon detection at room temperature for all infrared wavelengths is achieved. Over the years, at DRS, we have developed a technology base for both n- and p-type HgCdTe materials parameters that are relevant to photodiode design and fabrication. This paper will discuss data that we have taken recently on minority carrier lifetime in MWIR and long wave infrared (LWIR) HgCdTe, particularly p type, and how it compares to current theories of Auger 7, radiative, and Shockley-Read recombination in this material. Extrinsic group IB (Cu, Au) and group V (arsenic) p-type dopants were used, together with group III (In) for n-type. The impact of the data on future HOT detector work is discussed.

Infrared negative luminescent devices and higher operating temperature detectors

Infrared LEDs and negative luminescent devices, where less light is emitted than in equilibrium, have been attracting an increasing amount of interest recently. They have a variety of applications, including as a ‘source’ of IR radiation for gas sensing; radiation shielding for, and non-uniformity correction of, high sensitivity staring infrared detectors; and dynamic infrared scene projection. Similarly, infrared (IR) detectors are used in arrays for thermal imaging and, discretely, in applications such as gas sensing. Multi-layer heterostructure epitaxy enables the growth of both types of device using designs in which the electronic processes can be precisely controlled and techniques such as carrier exclusion and extraction can be implemented. This enables detectors to be made which offer good performance at higher than normal operating temperatures, and efficient negative luminescent devices to be made which simulate a range of effective temperatures whilst operating uncooled. In both cases, however, additional performance benefits can be achieved by integrating optical concentrators around the diodes to reduce the volume of semiconductor material, and so minimise the thermally activated generation-recombination processes which compete with radiative mechanisms. The integrated concentrators are in the form of Winston cones, which can be formed using an iterative dry etch process involving methane/hydrogen and oxygen. We present results on negative luminescence in the mid- and long-IR wavebands, from devices made from indium antimonide and mercury cadmium telluride, where the aim is sizes greater than 1 cm×1 cm . We also discuss progress on, and the potential for, operating temperature and/or sensitivity improvement of detectors, where very high-performance imaging is anticipated from systems which require no mechanical cooling.

Novel HgxCd1−xTe device structure for higher operating temperature detectors

A novel detector structure in which photons are absorbed in narrow-gap material, but the junction lies in wider bandgap material, has been examined. A possible reduction in bulk 1/f noise by a factor of 33 for a 240 K operation was predicted, based on studies that have suggested that the source of 1/f noise is the p-n junction and the large reduction in 1/f noise, which is observed in conventional detectors when the bandgap is increased. The increased bandgap at the junction produces a potential barrier; however, calculations are presented showing that for T > 150 K the thermal energy of the electrons enables them to cross the barrier and reach the p-n junction before recombining in the active region, thus giving high quantum efficiency. Experiments performed on the diodes showed that the quantum efficiency was maintained as expected, but the 1/f noise was not reduced, suggesting that it does not originate at the p-n junction. However, the structure does give excellent reverse-bias characteristics with low breakdown even at 2-V reverse bias.