High Mobility Research Articles

Exploring electronic characteristics of bilayer HfS2 under mechanical strain and external electric field: a first-principles approach

This study employed the density functional theory (DFT) to explore the dynamic stability of different stacking configurations of bilayer HfS2 (2L-HfS2) and the influence of external conditions on its electronic properties. These results indicate that the AA configuration is the most stable among the various stacking configurations. Calculations of the carrier effective mass revealed that the artificially stacked 2L-HfS2 maintained a small effective mass of electrons and holes and exhibited high carrier mobility. Further investigation revealed diverse trends in the electronic properties of 2L-HfS2 under vertical strain, in-plane strain, shear strain, and an applied external electric field. These variations encompass bandgap size alterations, band structure evolution, and transitions in the metallic behavior. This systematic study elucidates the regulatory effects of different strains and external electric field conditions on the electronic properties of 2L-HfS2, thereby providing a vital theoretical foundation and experimental guidance for its application in electronics and optoelectronics.

Exploration of two-dimensional XPY3 (X = Zn, Cd; Y[dbnd]S, Se) for photocatalytic water splitting

Two-dimensional (2D) materials are attracting much attention as emerging photocatalytic water splitting candidates in green and clean energy applications. In this work, we designed four 2D materials, ZnPS3, ZnPSe3, CdPS3 and CdPSe3, which possess high stability, moderate band-gaps (2.24–3.29 eV), and anisotropic carrier mobilities of 192.26 ─ 676.04 cm2/Vs. Besides, they also have suitable band edges of REDOX at PH = 0, which can simultaneously drive photocatalytic water splitting to produce H2 and O2, and show acceptable free energy for hydrogen evolution reaction (HER) of 0.89–1.20 eV. Moreover, monolayer ZnPSe3 and CdPSe3 can deliver strong absorption coefficients (∼105 cm−1) from visible to ultraviolet light. As a result, they have excellent solar-to-hydrogen efficiency of 18.39% and 19.70%, suggesting they are promising photocatalytic candidates for overall water splitting.

Comparative analysis of reactive routing protocols for vehicular adhoc network communications

In the recent past, vehicular adhoc networks (VANETs) have gained a lot of importance. The routing protocols play a vital role to deliver payloads from one vehicle to another one while they are moving at relative speeds. It is a challenging task to select a routing protocol for VANETs because of the uneven distribution and high mobility of vehicles. In this paper, we have analysed the two standard reactive protocols, adhoc on-demand distance vector (AODV) and ant colony optimization (ACO). The performance comparison of AODV and ACO routing protocols has been presented in this paper. The results show AODV performed better in terms of energy consumption and routing overhead. While considering the throughput, energy loss ratio, and delay ACO has performed. ACO resulted as upperhand.

High Mobility Group Box 1 Protein: A Plausible Therapeutic Molecular Target in Parkinson's disease.

Parkinson's disease (PD) is a widespread neurodegenerative disorder that exerts a broad variety of detrimental effects on people's health. Accumulating evidence suggests that mitochondrial dysfunction, neuroinflammation, α-synuclein aggregation and autophagy dysfunction may all play a role in the development of PD. However, the molecular mechanisms behind these pathophysiological processes remain unknown. Currently, research in PD has focussed on high mobility group box 1 (HMGB1), and different laboratory approaches have shown promising outcomes to some level for blocking HMGB1. Given that HMGB1 regulates mitochondrial dysfunction, participates in neuroinflammation, and modulates autophagy and apoptosis, it is hypothesised that HMGB1 has significance in the onset of PD. In the current review, research targeting multiple roles of HMGB1 in PD pathology was integrated, and the issues that need future attention for targeted therapeutic approaches are mentioned.

High Mobility n‐Type Imide‐Based Semiconductor with Unusual Single‐Crystal Packing Structure in Solution‐Processed Thin Film

AbstractSolid‐state molecular arrangement has been recognized as the most important role in the charge transport properties of organic semiconductors. Although highly ordered molecular stacking is achieved in single crystals, maintaining single‐crystal molecular packing in solution‐processed thin films remains a significant challenge. Herein, a new type of n‐type organic semiconductors based on an asymmetric fluoranthene imide unit is reported, whose intermolecular packing and aggregation behavior in the thin film state can be effectively controlled by regulating the cyano substitution sites and alkyl chain types in the imide group. F10 with cyano groups at 4,9‐sites and branched 2‐ethylhexyl chain encouragingly shows a highly ordered single‐crystal‐like molecular packing in solution‐processed thin film after thermal annealing, and thus the resulting organic field‐effect transistors exhibit impressive charge transport performance, with the electron mobility as high as 0.116 cm2 V−1 s−1. This work opens a new avenue for developing high‐performance solution‐processed n‐type semiconductors.

Effects ofAs8structure formation on the surface morphology and internal microstructure of GaAs thin films.

Gallium arsenide (GaAs) materials have the advantages of high electron mobility, electron saturation drift rate, and other irreplaceable semiconducting properties. They play an important role in the electronics, solar and other fields. However, during GaAs film sedimentary growth, As atoms can undergo segregation to formAs8clusters because of the influence of external factors, which affect the surface morphology and internal structure of these films. In this study, a series of investigations on the deposition and growth of GaAs crystal films were performed. Additionally, the deposition and growth of GaAs thin films were simulated using molecular dynamics. The influence of As8clusters on the surface morphology and internal structure of GaAs films at different incidence angles, velocities and substrate temperatures was studied by using 'defect analysis technology' and 'diamond structure identification' in open source software, along with surface roughness and radial distribution function. Results show that with increasing incident angle, the number ofAs8clusters decreases and film density increases. Increasing incident velocity increases the irregular movement ofAs8clusters in air, and their deposition on the film surface affects the morphology of the film, and the surface roughness increases first and then decreases. Additionally, we investigated the effect of different substrate temperatures on the film surface. Results show that at a substrate temperature of 1173 K, the number ofAs8clusters in the film decreases or the As8clusters disappear, heterogeneous nucleation occurs in the film, and the crystallization rate increases. Although the dislocation line associated with nucleation may affect the mechanical and optical properties of the film, it considerably reduces the annealing effort after the deposition and growth.

Investigation of Three‐Channel Heterostructure and High‐Electron‐Mobility Transistor with Quaternary In0.1Al0.5Ga0.4N Barrier

Herein, a high‐quality In0.1Al0.5Ga0.4N/GaN three‐channel (TC) heterostructure and the high‐electron‐mobility transistor (HEMT) based on it are proposed and investigated. The quaternary nitrides offer additional flexibility in adjusting the lattice constant and bandgap, enabling the achievement of a nearly strain‐free high‐Al‐content barrier. By stacking three In0.1Al0.5Ga0.4N/GaN heterostructures, a high 2D electron gas density of 2.59 × 1013 cm−2 and a high electron mobility of 1707 cm2 V−1 s−1 are achieved. As compared with the AlGaN/GaN TC heterostructure, the In0.1Al0.5Ga0.4N/GaN TC heterostructure reduces the sheet resistance by 39%, resulting in a 40 % reduction in the on‐resistance of the TC HEMT. Additionally, the inverse piezoelectric effect of the In0.1Al0.5Ga0.4N/GaN TC‐HEMT is investigated by negative‐gate voltage bias step‐stress experiments. During the stress experiments, no irreversible degradation is observed in the In0.1Al0.5Ga0.4N/GaN TC‐HEMT, while the AlGaN/GaN TC‐HEMT exhibits a significant deterioration beyond the critical voltage. The reliability related to the inverse piezoelectric effect of the devices can be further improved due to the lower stress in the lattice‐matched quaternary barrier.

Anti-HMGB1 mAb Therapy Reduces Epidural Hematoma Injury

Epidural and subdural hematomas are commonly associated with traumatic brain injury. While surgical removal is the primary intervention for these hematomas, it is also critical to prevent and reduce complications such as post-traumatic epilepsy, which may result from inflammatory responses in the injured brain areas. In the present study, we observed that high mobility group box-1 (HMGB1) decreased in the injured brain area beneath the epidural hematoma (EDH) in rats, concurrent with elevated plasma levels of HMGB1. Anti-HMGB1 monoclonal antibody therapy strongly inhibited both HMGB1 release and the subsequent increase in plasma levels. Moreover, this treatment suppressed the up-regulation of inflammatory cytokines and related molecules such as interleukin-1-beta (IL-1β), tumor necrosis factor-alpha (TNF-α), and inducible nitric oxide synthase (iNOS) in the injured areas. Our in vitro experiments using SH-SY5Y demonstrated that hematoma components—thrombin, heme, and ferrous ion— prompted HMGB1 translocation from the nuclei to the cytoplasm, a process inhibited by the addition of the anti-HMGB1 mAb. These findings suggest that anti-HMGB1 mAb treatment not only inhibits HMGB1 translocation but also curtails inflammation in injured areas, thereby protecting the neural tissue. Thus, anti-HMGB1 mAb therapy could serve as a complementary therapy for an EDH before/after surgery.

Association of deletion polymorphism rs10573247 in the HMGA2 gene with the risk of breast cancer: bioinformatic and experimental analyses

BackgroundThe high mobility group A2 (HMGA2) gene is expressed extensively during early embryonic development but is inactivated in adulthood, and it is also reactivated in various benign and malignant tumors, including breast cancer. We first assessed the potential functional significance of the unstudied deletion polymorphism rs10573247 at the 3′UTR of HMGA2 on miRNA binding using bioinformatic tools, and subsequently, the association between this polymorphism and breast cancer susceptibility was investigated.Materials and methodsWe applied the RNAhybrid tool to predict the functional effects of polymorphism rs10573247 located within the 3’ UTR of the HMGA2 gene on miRNA binding. Then, following DNA extraction, 141 breast cancer patients and 123 healthy controls were genotyped for polymorphism rs10573247 using RFLP-PCR with the restriction enzyme Eam1104I.ResultsOur bioinformatic data have shown that polymorphism rs10573247 is located in the region that serves as a potential target site for eight miRNAs binding. Among them, miR-3125 exhibited decreased binding affinity for the allele delTT (MFE = -21.8) when compared to the allele TT (MFE = -23.9), but miR-4476 increased binding affinity for the allele delTT (MFE = -22.4) compared to the allele TT (MFE = -22.2). In addition, our results showed that the genotype TT/delTT (p = 0.005) and the genotype delTT/delTT (p = 0.029) were significantly associated with an increased risk of developing breast cancer compared to the genotype TT/TT using RFLP-PCR.Discussion and ConclusionOur findings suggest that polymorphism rs10573247 may contribute to the risk of breast cancer through the functional effect of this polymorphism on miRNA binding.

Understanding how junction resistances impact the conduction mechanism in nano-networks

Networks of nanowires, nanotubes, and nanosheets are important for many applications in printed electronics. However, the network conductivity and mobility are usually limited by the resistance between the particles, often referred to as the junction resistance. Minimising the junction resistance has proven to be challenging, partly because it is difficult to measure. Here, we develop a simple model for electrical conduction in networks of 1D or 2D nanomaterials that allows us to extract junction and nanoparticle resistances from particle-size-dependent DC network resistivity data. We find junction resistances in porous networks to scale with nanoparticle resistivity and vary from 5 Ω for silver nanosheets to 24 GΩ for WS2 nanosheets. Moreover, our model allows junction and nanoparticle resistances to be obtained simultaneously from AC impedance spectra of semiconducting nanosheet networks. Through our model, we use the impedance data to directly link the high mobility of aligned networks of electrochemically exfoliated MoS2 nanosheets (≈ 7 cm2 V−1 s−1) to low junction resistances of ∼2.3 MΩ. Temperature-dependent impedance measurements also allow us to comprehensively investigate transport mechanisms within the network and quantitatively differentiate intra-nanosheet phonon-limited bandlike transport from inter-nanosheet hopping.

Optimizing electrical and thermal performance in AlGaN/GaN HEMT devices using dual‐metal gate technology

AbstractThe investigation of aluminum gallium nitride/gallium nitride high electron mobility transistor (AlGaN/GaN HEMT) devices with a dual‐metal gate (DMG) structure encompasses both electrical and thermal characteristics. As efforts to enhance heat dissipation progress, there is a concurrent exploration of novel semiconductor materials boasting high thermal conductivity, like boron arsenide and phosphide. Combining these materials into a model and measuring their interface achieves efficient energy transport. Minimizing the self‐heating impact in AlGaN/GaN HEMTs is essential for enhancing device efficiency. This research exposes the heterogenous combination of boron arsenide and phosphide cooling substrates with metals, GaN semiconductors and HEMT. In this research, the autoencoder deep neural network techniques in GaN HEMT for self‐heat reduction is driven by the ability to effectively analyze and model the thermal behavior of the device. Autoencoders learn complex relationships within temperature data and identify patterns associated with self‐heating. By leveraging these learned representations, the deep neural network optimizes control strategies to mitigate self‐heating effects in GaN HEMT devices, ultimately contributing to improved thermal management and enhanced overall performance. In this research, the use of genetic algorithms in GaN HEMT aims to optimize device parameters systematically, to minimize self‐heating effects and enhance overall thermal performance. The structure also enhances electron mobility within the channel. Results show DMG structures, exhibiting higher saturation output currents and transconductance despite self‐heating. The DMG exhibits a maximum gm value of 0.164 S/mm, which is 10% higher significantly enhancing GaN‐based HEMTs for improved reliability and efficiency in various applications.

Catalytic strategies for uniform monolayer MoSe2 growth in CVD processes

To facilitate the widespread utilization of devices based on two-dimensional transition metal dichalcogenide (TMDC) materials, addressing the challenge of producing large-area and uniform monolayers is crucial. In this study, we investigated the efficacy of various catalysts in promoting the growth of monolayer MoSe2 through chemical vapor deposition (CVD) as a potential solution to improve surface coverage and uniformity while maintaining the monolayer structure. Five distinct water-soluble catalysts (sodium chloride (NaCl), zinc chloride (ZnCl2), potassium hydroxide (KOH), potassium chloride (KCl), potassium oxalate (K2C2O4)) were employed in conjunction with a glass substrate for the CVD-based growth of monolayer MoSe2. We applied these catalyst solutions as thin layers onto SiO2/Si substrates to observe their specific catalytic effects on monolayer MoSe2 formation. MoSe2 was selected as the target material due to its promising characteristics within the TMDC family, particularly its high mobility. Our findings revealed that NaCl, ZnCl2, KCl, and K2C2O4 catalysts enhanced monolayer growth in the 2H phase on SiO2/Si substrates, while the glass substrate resulted in a hybrid 1T/2H MoSe2 structure, albeit with the highest surface coverage. Furthermore, the use of a catalyst allowed us to bypass the laborious transfer step by enabling direct growth of the MoSe2 flakes on the Si/SiO2 substrate, eliminating the risk of flake damage arising from the transfer process. Among the catalyst solutions, NaCl yielded the most homogeneous MoSe2 monolayer growth with relatively high coverage.

Photovoltaic Cell Prepared from Nanoparticles of CdS/CdTe on ITO Substrate and its Characterization

CdS/CdTe based photovoltaic cell has shown the markable efficiency. The CdS/CdTe nanoparticles are being synthesized and deposited on the ITO glass plate. ITO glass has a large bandgap of about approximately 3.6 eV and is suitable to use in the fabrication of photovoltaic cell. As ITO behaves as negative terminal, it is used as front layer for capturing the light intensity. During fabrication of photovoltaic cell, the deposition of Cadmium sulphide and Cadmium telluride nanoparticles layer was done by brush painting technique. The CdS layer is used as window layer and CdTe acts as absorbing layer. The window layer’s primary function is to absorb light particularly in the visible region of the spectrum to generate electricity. The CdS layer forms p-n junction with the CdTe layer. The nanoparticles of CdS and CdTe have been synthesized first and optical characterization was carried out using UV-visible spectroscopy to obtain bandgap of CdTe and CdS. Structural characterization was being obtained by XRD. The size of the nanocrystallites of CdS and CdTe have been obtained by Debye Scherrer equation and the result was 1.64 nm and 4.09 nm respectively. The CdTe layer which was used as absorbing layer consists of high optical absorption coefficient with high mobility, good carrier lifetime and an enhanced properties of crystallographic. Silver paste was used as a back contact for good conduction.

2D–3D heterostructure of PtS2−x /Ga2O3 and their band alignment studies for high performance and broadband photodetector

For deep ultraviolet (UV-C) photodetectors, gallium oxide (Ga2O3) is a suitable candidate owing to its intrinsic ultra-wide band gap and high stability. However, its detection is limited within the UV-C region, which restricts it to cover a broad range, especially in visible and near-infrared (NIR) region. Therefore, constructing a heterostructure of Ga2O3 with an appropriate material having a narrow band gap is a worthwhile approach to compensate for it. In this category, PtS2 group-10 transitional metal dichalcogenide stands at the top owing to its narrow band gap (0.25–1.65 eV), high mobility, and stability for heterostructure synthesis. Moreover, heterostructure with Ga2O3 sensing in UV and PtS2 broad response in visible and IR range can broaden the spectrum from UV to NIR and to build broadband photodetector. In this work, we fabricated a 2D–3D PtS2−x /Ga2O3 heterostructure based broadband photodetector with detection from UV-C to NIR region. In addition, the PtS2−x /Ga2O3 device shows a high responsivity of 38.7 AW−1 and detectivity of 4.8 × 1013 Jones under 1100 nm light illumination at 5 V bias. A fast response of 90 ms/86 ms illustrates the device’s fast speed. An interface study between the PtS2−x and Ga2O3 was conducted using x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy (UPS) which confirmed type-I band alignment. Finally, based on their band alignment study, a carrier transport mechanism was proposed at the interface. This work offers a new opportunity to fabricate large-area high-performance 2D–3D heterostructures based photodetectors for future optoelectronics devices.

An inorganic-blended p-type semiconductor with robust electrical and mechanical properties

Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.7 to 2.2 eV. Wafer-scale ultrathin TeSeO films, which can be deposited at room temperature, display high hole field-effect mobility of 48.5 cm2/(Vs) and robust hole transport properties, facilitated by Te-Te (Se) portions and O-Te-O portions, respectively. The nanosphere lithography process is employed to create nanopatterned honeycomb TeSeO broadband photodetectors, demonstrating a high responsibility of 603 A/W, an ultrafast response of 5 μs, and superior mechanical flexibility. The p-type TeSeO system is highly adaptable, scalable, and reliable, which can address emerging technological needs that current semiconductor solutions may not fulfill.

Steep Slope Field Effect Transistors Based on 2D Materials

AbstractWith field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD) scaling down proportionally caused by thermionic limit subthreshold swing (SS) (60 mV dec−1) pose substantial challenges for today's semiconductor industry. To further sustain the Moore's law life, incorporation of new device concepts or new materials are imperative. 2D materials are predicted to be able to combat SCEs by virtue of high carrier mobility maintainability regardless of thickness thinning down, dangling bonds free surface and atomic thickness, which contributes to super gate electrostatic controllability. To overcome increasing power dissipation problem, new device structures including negative capacitance FET (NCFET), tunnel FET (TFET), dirac source FET (DSFET) and the like, which show superiority in decreasing VDD by lowering SS below thermionic limit of 60 mV dec−1 have been brought out. The combination of 2D materials and ultralow steep slope device structures holds great promise for low power‐dissipation electronics, which encompass both suppressed SCEs and reduced VDD simultaneously, leading to improved device performance and lowered power dissipation.

Janus TiSiZ3H (Z = N, P, As) monolayers with large out-of-plane piezoelectricity and high electron mobility: first-principles study

Abstract In this paper, we propose a series of novel two-dimensional Janus structures TiSi$Z_3$H ($Z=$ N, P, As) and investigate their electronic, mechanical, piezoelectric, and transport properties using the density functional theory. The examined results demonstrated that Janus TiSi$Z_3$H monolayers are structurally stable. At the ground state, TiSiN$_3$H, TiSiP$_3$H, and TiSiAs$_3$H monolayers are all semiconductors with indirect bandgaps of 2.98, 1.06, 1.02~eV at the hybrid-functional level, respectively. The absence of vertical mirror symmetry in TiSi$Z_3$H results in the occurrence of both in-plane and out-of-plane piezoelectricity. Interestingly, TiSiAs$_3$H monolayer exhibits large out-of-plane piezoelectric response with coefficient $d_{31}$ up to $-0.45$~pm/V, that is appropriate for use in piezoelectric devices. The calculated results demonstrate that the carrier mobility in Janus TiSi$Z_3$H monolayers is high and directional anisotropic. Particularly, electron mobility in TiSiP$_3$H monolayer is observed up to 772.31~cm$^2$V$^{-1}$s$^{-1}$. Our results not only suggest and confirm some fundamental physical characteristics of new materials but also lay important premises for experimental studies as well as their application prospects in the future.

Efficient gradient heating-up approach for rapid growth of high-quality amorphous ZrO2 dielectric films

Abstract High-k oxide dielectric films are indispensable for low-power-consumption oxide thin-film transistors (TFTs) applied in advanced and portable electronics. However, high-quality oxide dielectric films prepared by solution process typically require sophisticated processes and long thermal annealing time, severely limiting both the throughput manufacturing and cost-effectiveness. In this study, the influence of different heating-up methods on the surface morphology and dielectric properties was systematically investigated. Gradient heating-up method could not only substantially improve the surface morphology and quality of high-k ZrO2 films but also efficiently shorten the annealing time. The gradient heating-up process was further designed on the basis of thermal behavior of the xerogel-like precursor, which successfully realize the preparation of high-quality ZrO2 films with an annealing time of 5 min (i.e. the efficiency of thermal treatment increased by about 89%). The ZrO 2 film presented excellent dielectric properties, including a low leakage current density of ~10−8 A/cm2 (at 2 MV/cm), a large areal capacitance of 169 nF/cm2 and a high dielectric constant of 20.41 (1 MHz). Furthermore, InSnZnO TFT based on the ZrO2 gate dielectrics shows an acceptable device performances, such as a high carrier mobility of 2.82 cm2/V s, a high on/off current ratio of ~105 and a low subthreshold swing of 0.19 V/decade at a low operation voltage of 5 V. This work provide a highly promising approach to fabricate high-quality solution-processed high-k oxide dielectric films employed for large-scale and low-power-consumption electronics.

A Systematical Study on Bands and Defects of CsBX3 (B = Pb, Sn, Ge, X = Cl, Br, I) Perovskite Based on First Principles

Metal halide perovskites have attracted considerable attention as novel optoelectronic materials for their excellent optical and electrical properties. Inorganic perovskites (CsPbX3, X = Cl, Br, I) are now viable alternative candidates for third-generation photovoltaic technology because of their high photoelectric conversion efficiency, high carrier mobility, good defect tolerance, simple preparation method and many other advantages. However, the toxicity of lead is problematic for practical implementation. Thus, the fabrication of lead-free perovskite materials and devices has been actively conducted. In this work, the energy band and photoelectric properties of inorganic perovskites CsBX3 (B = Pb, Sn, Ge, X = Cl, Br, I) have been investigated with the first principles calculation, and the possible defect energy levels and their formation energies in different components, in particular, have been systematically studied. The advantages and disadvantages of Sn and Ge as replacement elements for Pb have been demonstrated from the perspective of defects. This study provides an important basis for the study of the properties and applications of lead-free perovskites.

A variant of uncertain significance of the HMGA2 gene in a child with Silver-Russell syndrome-like phenotype: a case report.

Silver-Russell syndrome 5 (SRS5) is characterized by asymmetric intrauterine growth restriction (IUGR), poor postnatal growth, macrocephaly at birth, and feeding difficulties. Other possible features include triangular shaped face, prominent forehead, hypertelorism, epicanthus, micrognathia, brachydactyly, clinodactyly of the 5th finger, and syndactyly of the 2nd and 3rd toes. Pathogenic variants of the HMGA2 (high mobility group AT-hook 2) gene, on chromosome 12q14, which regulates the transcription of growth factor IGF2, have recently been associated with this syndrome. Herein, we present a 2.5-year-old boy with growth delay, SRS-like phenotype, and a variant of uncertain significance in the HMGA2 gene, which has not, to the best of our knowledge, been described to date in the medical literature. So far, 28 pathogenic variants ofthe HMGA2 gene in patients with clinical SRS phenotype have recently been reported. Therefore, HMGA2 gene testing should alwaysbe done in SRS patients who are found to be negative for the typical 11p15 (epi)mutations and matUPD7, while the mutations should also be added to growth retardation disorder panels.