High Frequency Electrical Characteristics Research Articles

Large Errors from Assuming Equivalent DC and High-Frequency Electrical Characteristics in Metal–Multiple-Insulator–Metal Diodes

Metal–insulator–metal (MIM) tunnel diodes are essential for ultra-high-speed rectification. We review an erroneous method for distributing DC voltage drops across multiple insulator layers that is used in all the published literature on these devices. It has resulted in large errors between designed and fabricated multi-insulator diodes. For multi-insulator MIM diodes, voltage division is dependent on both tunneling resistances and oxide capacitances. We demonstrate that correct voltage division at DC is determined by the rectification resistance, as opposed to the commonly used capacitive voltage division. We find that DC characteristics of multi-insulator diodes cannot be used to predict high-frequency behavior.

RLC effects in fine pitch anisotropic conductive film connections

PurposeThe resistance, capacitance and inductance of anisotropic conductive film (ACF) connections determine their high frequency electrical characteristics. The presence of capacitance and inductance in the ACF joint contributes to time delays and cross‐talk noise as well as simultaneous switching noise within the circuit. The purpose of this paper is to establish an experimental method for estimating the capacitance and inductance of a typical ACF connection. This can help to provide a more detailed understanding of the high frequency performance of ACF assemblies.Design/methodology/approachExperiments on the transient response of an ACF joint were performed using a digital oscilloscope capable of achieving the required ns resolution. An equivalent circuit model is proposed in order to quantify the capacitance (C) and inductance (L) of a typical ACF connection and this model is fitted to the experimental data. The full model consisted of two resistors, an inductor, and a capacitor.FindingsThe capacitance and inductance of a typical ACF connection were estimated from the measured transient response using Kirchhoff's voltage law. The method for estimation of R, L, and C from the transient response is discussed, as are the RLC effects on the high frequency electrical characteristics of the ACF connection.Research limitations/implicationsThere was decay time deviation between the calculation and the experiment. It may have resulted from the skin effect in the high frequency response and the adhesive surrounding joint as well. The main reason may be the capacitance zctric lost. Further research work will be done to determine more accurately the dielectric losses in anisotropic conductive adhesive (ACA) joint.Originality/valueThis paper presents a new method to characterise the high frequency properties of ACA interconnections and will be of use to engineers evaluating the performance of ACF materials in high frequency applications.

全層ＩＶＨ構造樹脂多層プリント配線板のビアおよびＳＢＢによる接続部の高周波特性

全層ＩＶＨ構造樹脂多層プリント配線板のビアおよびＳＢＢによる接続部の高周波特性

Band-gap narrowing and high-frequency characteristics of Si/Ge/sub x/Si/sub 1-x/ heterojunction bipolar transistors formed by Ge ion implantation in Si

Si/Ge/sub x/Si/sub 1-x/ heterojunction n-p-n bipolar transistors (HBT's) with a double-polysilicon self-aligned structure were fabricated by using high dose Ge implantation for the formation of the Si/Ge/sub x/Si/sub 1-x/ heterostructure and As and BF/sub 2/ implantation for emitter and base doping. DC and high frequency electrical characteristics are investigated for Ge concentrations up to 7 at.% and for base widths down to 35 nm. Improvements in electrical characteristics compared to reference Si transistors are demonstrated. Experimental data indicating that these improvements are related to an effective band gap engineering are shown and discussed.

Modeling small diameter straw tubes in terms of their high frequency electrical characteristics

As a part of the effort to design a prototype of a low-mass tracking detector, an empirical model of the high-frequency behavior of small-diameter proportional straw tubes was developed. The equivalent circuit is a distributed network RLC-clusters, where the value of the discrete components is directly related to measurable characteristics of the em straws. The model is an approximation of the straw as a low-loss transmission line, and it yields very good agreement with measurements of transmission and reflection coefficients. Measurements and simulations of input impedance in the frequency domain agree well at frequencies below 120 MHz, when termination is close to Z/sub 0/, the characteristic impedance.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>