High Excitation Conditions Research Articles

Low Surface Recombination in Hexagonal SiGe Alloy Nanowires: Implications for SiGe-Based Nanolasers.

Monolithic integration of silicon-based electronics and photonics could open the door toward many opportunities including on-chip optical data communication and large-scale application of light-based sensing devices in healthcare and automotive; by some, it is considered the Holy Grail of silicon photonics. The monolithic integration is, however, severely hampered by the inability of Si to efficiently emit light. Recently, important progress has been made by the demonstration of efficient light emission from direct-bandgap hexagonal SiGe (hex-SiGe) alloy nanowires. For this promising material, realized by employing a nanowire structure, many challenges and open questions remain before a large-scale application can be realized. Considering that for other direct-bandgap materials like GaAs, surface recombination can be a true bottleneck, one of the open questions is the importance of surface recombination for the photoluminescence efficiency of this new material. In this work, temperature-dependent photoluminescence measurements were performed on both hex-Ge and hex-SiGe nanowires with and without surface passivation schemes that have been well documented and proven effective on cubic silicon and germanium to elucidate whether and to what extent the internal quantum efficiency (IQE) of the wires can be improved. Additionally, time-resolved photoluminescence (TRPL) measurements were performed on unpassivated hex-SiGe nanowires as a function of their diameter. The dependence of the surface recombination on the SiGe composition could, however, not be yet addressed given the sample-to-sample variations of the state-of-the-art hex-SiGe nanowires. With the aforementioned experiments, we demonstrate that at room temperature, under high excitation conditions (a few kW cm-2), the hex-(Si)Ge surface is most likely not a bottleneck for efficient radiative emission under relatively high excitation conditions. This is an important asset for future hex(Si)Ge optoelectronic devices, specifically for nanolasers.

Abrupt exciton quenching in blue fluorescent organic light-emitting diodes around turn-on voltage region

The quenching of electrically generated excitons in organic light-emitting diodes (OLEDs) serves as a limiting factor in fully exploiting the potential of organic emissive materials, ultimately resulting in a reduction of electroluminescence (EL) efficiency. As the quenching yield is contingent upon the density of species such as excitons and polarons, extensive efforts have been made to comprehend the mechanism under high excitation conditions. Herein, we present a sudden exciton quenching at the turn-on voltage region in a blue triplet–triplet upconversion (TTU)-based blue fluorescent OLED that limits overall EL efficiency. We confirmed that the photoluminescence intensity was quenched by ∼5% before injecting a current density of 0.1 mA cm−2. The quenching behavior strongly depended on the hole-transporting materials (HTMs), indicating that a specific radical cation of the HTMs triggers exciton-polaron annihilation events at the interface between the hole-transporting layer (HTL) and the emitting layer (EML). Furthermore, the voltage dependence of exciton quenching yield and EL spectra suggests a shift in the emission zone from the interface to the bulk of the EML with increasing voltage. These findings are critical for designing an optimized HTL/EML interface for highly efficient blue TTU-OLEDs.

Photoisomerization of Heptamethine Cyanine Dyes Results in Red-Emissive Species: Implications for Near-IR, Single-Molecule, and Super-Resolution Fluorescence Spectroscopy and Imaging.

Photoisomerization kinetics of the near-infrared (NIR) fluorophore Sulfo-Cyanine7 (SCy7) was studied by a combination of fluorescence correlation spectroscopy (FCS) and transient state (TRAST) excitation modulation spectroscopy. A photoisomerized state with redshifted emission was identified, with kinetics consistent with a three-state photoisomerization model. Combining TRAST excitation modulation with spectrofluorimetry (spectral-TRAST) further confirmed an excitation-induced redshift in the emission spectrum of SCy7. We show how this red-emissive photoisomerized state contributes to the blinking kinetics in different emission bands of NIR cyanine dyes, and how it can influence single-molecule, super-resolution, as well as Förster resonance energy transfer (FRET) and multicolor readouts. Since this state can also be populated at moderate excitation intensities, it can also more broadly influence fluorescence readouts, also readouts not relying on high excitation conditions. However, this additional red-emissive state and its photodynamics, as identified and characterized in this work, can also be used as a strategy to push the emission of NIR cyanine dyes further into the NIR and to enhance photosensitization of nanoparticles with absorption spectra further into the NIR. Finally, we show that the photoisomerization kinetics of SCy7 and the formation of its redshifted photoisomer depend strongly on local environmental conditions, such as viscosity, polarity, and steric constraints, which suggests the use of SCy7 and other NIR cyanine dyes as environmental sensors. Such environmental information can be monitored by TRAST, in the NIR, with low autofluorescence and scattering conditions and on a broad range of samples and experimental conditions.

A peel-off convolution kernel compensation method for surface electromyography decomposition

Objective:Estimating discharge patterns of motor units by electromyography (EMG) decomposition has shown promising perspectives in neurophysiologic investigations and human–machine interfaces. However, the number of decoded motor units is still limited, especially under high excitation and noisy conditions, which is a major barrier to the broad application of EMG decomposition. In this work, we applied a peel-off decomposition strategy to the convolution kernel compensation (CKC) algorithm to extract more motor units non-invasively. Methods:EMG signals were firstly decomposed into motor unit spike trains (MUSTs) using the CKC. After each decomposition, the motor unit action potentials (MUAPs) were reconstructed and subtracted from the EMG signals. Then the same CKC decomposition was applied to the residual signals. This peel-off procedure was repeated until no valid motor units were identified. The proposed decomposition strategy was validated on synthetic EMG signals by convolving simulated MUSTs and experimentally extracted MUAPs under multiple excitations and noise conditions. Then the decomposition performance was evaluated on experimental data. Main results:Compared with the classic CKC method, the number of the identified motor units from synthetic signals was significantly increased by 7 to 43 in each decomposition. Moreover, the average agreement between identified MUST and ground truth was 0.80 ± 0.20, indicating a high decomposition accuracy. From experimental EMG signals, the peel-off method could identify more motor units (>20) with high confidence than the classic method (<5) across three excitation levels. Conclusion and Significance:These results demonstrate the efficiency of the proposed method in identifying more motor units from EMG signals, extending the potential applications of surface EMG decomposition for neural decoding.

Auger Recombination and Carrier–Lattice Thermalization in Semiconductor Quantum Dots under Intense Excitation

A thorough understanding of the photocarrier relaxation dynamics in semiconductor quantum dots (QDs) is essential to optimize their device performance. However, resolving hot carrier kinetics under high excitation conditions with multiple excitons per dot is challenging because it convolutes several ultrafast processes, including Auger recombination, carrier-phonon scattering, and phonon thermalization. Here, we report a systematic study of the lattice dynamics induced by intense photoexcitation in PbSe QDs. By probing the dynamics from the lattice perspective using ultrafast electron diffraction together with modeling the correlated processes collectively, we can differentiate their roles in photocarrier relaxation. The results reveal that the observed lattice heating time scale is longer than that of carrier intraband relaxation obtained previously using transient optical spectroscopy. Moreover, we find that Auger recombination efficiently annihilates excitons and speeds up lattice heating. This work can be readily extended to other semiconductor QDs systems with varying dot sizes.

Oxygen vacancy levels mediated photophysical pathways of NIR-II responsive broadband upconversion

The photon upconversion (UC) is the process that has been known for a long time. Especially, lanthanide-based UC materials recently have attracted huge interest of scientific community due to their narrow visible emission bands upon near-infrared (NIR) excitation. However, the excitation in the high excitation power of NIR can cause highly bright and broad emission (B-UC). Such explosive B-UC was distinct at high excitation condition with UC wavelength encompassing the entire visible range. Previously, the proposed model of B-UC origination includes heat, multi-photon absorption, and accumulated thermal energy transfer. In this article, we will show various experimental and theoretical evidence supporting the idea that B-UC arises from photophysical pathways. Here, the key experimental evidence for photophysical pathways model of B-UC is to measure B-UC in the low-temperature environment (22 K). In addition, the density functional theory was used to regenerate energy levels which would be compared to the absorption spectral bands in Er2O3. As a result, we are confident of an electron tunneling model from 2P3/2 of Er3+ to oxygen vacancy level (VO) of Er2O3. Then, VO electrons are sequentially excited to the conduction band of Er2O3 by energy transfer from 4F9/2 of Er3+. Finally, the electrons return to the VO of Er2O3 with concomitant B-UC.

Wavelength tuning for random lasing of mist-CVD-grown Zn1−x Mg x O crystals with nanostructures on a-plane sapphire substrates

Zn1−x Mg x O crystals with nanostructures were grown on a-plane sapphire substrates by mist chemical vapor deposition (mist-CVD). The grown Zn1−x Mg x O crystals had a wurtzite crystalline, and their room-temperature photoluminescence peaks of them varied from approximately 355.5 to 377.9 nm depending on the composition of magnesium. Under high excitation conditions using a Nd:YAG pulse laser, random lasing behaviors were obtained from Zn1−x Mg x O crystals, and the tuning in the wavelength range of these random lasing was demonstrated. These results suggest that the mist-CVD crystal growth on a-plane sapphire substrates is useful for the growth of Zn1−x Mg x O crystals exhibiting random lasing.

Lasing action of ZnO nanowires grown by mist chemical vapor deposition using thin Au layer on c-plane sapphire substrate

ZnO nanowires were grown by mist chemical vapor deposition at a growth temperature of approximately 900 °C (tube furnace temperature) on a c-plane sapphire substrate sputtered with a thin Au layer with a designed thickness of 3 nm. ZnO nanowires of various lengths were grown, and their optical properties were investigated by room-temperature photoluminescence (RT-PL) measurements under high excitation conditions. The RT-PL spectra having sharp peaks may be capable of lasing actions. The result shows that this fabrication technique is useful for obtaining optical microcavities based on ZnO nanowires.

Shaping Up Zn-Doped Magnetite Nanoparticles from Mono- and Bimetallic Oleates: The Impact of Zn Content, Fe Vacancies, and Morphology on Magnetic Hyperthermia Performance.

The currently existing magnetic hyperthermia treatments usually need to employ very large doses of magnetic nanoparticles (MNPs) and/or excessively high excitation conditions (H × f > 1010 A/m s) to reach the therapeutic temperature range that triggers cancer cell death. To make this anticancer therapy truly minimally invasive, it is crucial the development of improved chemical routes that give rise to monodisperse MNPs with high saturation magnetization and negligible dipolar interactions. Herein, we present an innovative chemical route to synthesize Zn-doped magnetite NPs based on the thermolysis of two kinds of organometallic precursors: (i) a mixture of two monometallic oleates (FeOl + ZnOl), and (ii) a bimetallic iron-zinc oleate (Fe3–yZnyOl). These approaches have allowed tailoring the size (10–50 nm), morphology (spherical, cubic, and cuboctahedral), and zinc content (ZnxFe3–xO4, 0.05 < x < 0.25) of MNPs with high saturation magnetization (≥90 Am2/kg at RT). The oxidation state and the local symmetry of Zn2+ and Fe2+/3+ cations have been investigated by means of X-ray absorption near-edge structure (XANES) spectroscopy, while the Fe center distribution and vacancies within the ferrite lattice have been examined in detail through Mössbauer spectroscopy, which has led to an accurate determination of the stoichiometry in each sample. To achieve good biocompatibility and colloidal stability in physiological conditions, the ZnxFe3–xO4 NPs have been coated with high-molecular-weight poly(ethylene glycol) (PEG). The magnetothermal efficiency of ZnxFe3–xO4@PEG samples has been systematically analyzed in terms of composition, size, and morphology, making use of the latest-generation AC magnetometer that is able to reach 90 mT. The heating capacity of Zn0.06Fe2.94O4 cuboctahedrons of 25 nm reaches a maximum value of 3652 W/g (at 40 kA/m and 605 kHz), but most importantly, they reach a highly satisfactory value (600 W/g) under strict safety excitation conditions (at 36 kA/m and 125 kHz). Additionally, the excellent heating power of the system is kept identical both immobilized in agar and in the cellular environment, proving the great potential and reliability of this platform for magnetic hyperthermia therapies.

Interface structure and luminescence properties of epitaxial PbSe films on InAs(111)A

Epitaxial heterostructures of narrow-gap IV-VI and III-V semiconductors offer a platform for new electronics and mid-infrared photonics. Stark dissimilarities in the bonding and the crystal structure between the rocksalt IV–VIs and the zincblende III–Vs, however, mandate the development of nucleation and growth protocols to reliably prepare high-quality heterostructures. In this work, we demonstrate a route to single crystal (111)-oriented PbSe epitaxial films on nearly lattice-matched InAs (111)A templates. Without this technique, the high-energy heterovalent interface readily produces two populations of PbSe grains that are rotated 180° in-plane with respect to each other, separated by rotational twin boundaries. We find that a high-temperature surface treatment with the PbSe flux extinguishes one of these interfacial stackings, resulting in single-crystalline films with interfaces that are mediated by a monolayer of distorted PbSe. While very thin PbSe-on-InAs films do not emit light, hinting toward a type-III band alignment, we see strong room temperature photoluminescence from a 1.5 μm thick film with a minority carrier lifetime of 20 ns at low-excitation conditions and bimolecular recombination at high excitation conditions, respectively, even with threading dislocation densities exceeding 108 cm−2. We also note near-complete strain relaxation in these films despite large thermal expansion mismatch to the substrate, with dislocations gliding to relieve strain even at cryogenic temperatures. These results bring to light the exceptional properties of IV-VI semiconductors and the new IV-VI/III-V interfaces for a range of applications in optoelectronics.

Biexciton Dynamics in Single Colloidal CdSe Quantum Dots.

The investigation of biexciton dynamics in single colloidal quantum dots (QDs) is critical to biexciton-based applications. Generally, a biexciton exhibits an extremely low photoluminescence (PL) quantum yield as well as very fast PL decay due to strong nonradiative Auger recombination, making it difficult to investigate the biexciton dynamics. Here, we develop a quantitative method based on intensity- and time-resolved photon statistics to investigate the biexciton dynamics in single colloidal QDs. This robust method can be used under high-excitation conditions to determine the absolute radiative and Auger recombination rates of both neutral and charged biexciton states in a single QD level, and the corresponding ratios between the two states agree with the theoretical predictions of the asymmetric band structures of CdSe-based QDs. Furthermore, the surface traps are found to provide additional nonradiative recombination pathways for the biexcitons, and their contributions are quantified by the method.

Pure and Efficient Single-Photon Sources by Shortening and Functionalizing Air-Suspended Carbon Nanotubes

A single-photon source (SPS) based on a single-walled carbon nanotube (SWCNT) is a promising candidate for uncooled on-chip quantum information optoelectronics because a single photon can be generated at both room temperature and telecommunication wavelengths on silicon chips. However, for the applications of quantum information, such as quantum computing and quantum cryptography, higher performance SPSs that exhibit both high purity and high efficiency of single-photon generation are required. Here, we theoretically propose high-performance SPSs that simultaneously achieve high-purity and high-efficiency single-photon generation by using short and functionalized air-suspended SWCNTs. The simulated exciton dynamics, time-resolved photoluminescence, and photon correlation properties indicate that exciton–exciton annihilation, end quenching, and trapping in the defect introduced by functionalization such as oxygen or aryl doping play important roles in determining the emission and single-photon properties, which strongly depend on SWCNT length and excitation intensity. We found that high performance SPSs that exhibit simultaneously high single-photon purity of 99.87% and high single-photon generation efficiency of 99.84% can be realized by using air-suspended functionalized SWCNTs with a length of approximately 100 nm under high excitation conditions. This ideal SPS can enable high rate and long-distance quantum key distributions at room temperature.

Study on AC Loss Characteristics in HTS Windings of a HTS Controllable Reactor With Orthogonally Configured Core

The controllable reactor is one of the most effective methods for compensating reactive power, which can smoothly and fleetly adjust its output reactance with the change of transmitted power. A high temperature superconducting (HTS) controllable reactor with an orthogonally configured core has been proposed and developed. The HTS windings with direct current (DC) are adopted as the control windings to improve the excitation efficiency. However, under high level excitation condition, especially in the case of fast adjusting process, ac losses will occur and lead to reduction of thermal stability in the HTS windings. The E-J characteristics of HTS windings, magnetization characteristics of iron-core, and 3-D asymmetric structure of the reactor make it difficult to estimate ac loss of the HTS windings based on traditional finite-element methods. This paper proposes a new method to estimate ac loss for the HTS controllable reactor with orthogonally configured core. The ac losses and the critical current of the HTS windings in the reactor are presented and discussed, which has great guiding significance for prototype design.

Molecular Gas Properties in the Host Galaxy of GRB 080207

We present the results of CO(1-0) and CO(4-3) observations of the host galaxy of a long-duration gamma-ray burst GRB080207 at z = 2.0858 by using the Karl G. Jansky Very Large Array and the Atacama Large Millimeter/submillimeter Array. The host is detected in CO(1-0) and CO(4-3), becoming the first case for a GRB host with more than two CO transitions detected combined with CO(2-1) and CO(3-2) in the literature. Adopting a metallicity-dependent CO-to-H2 conversion factor, we derive a molecular gas mass of Mgas = 8.7 x 10^10 Modot, which places the host in a sequence of normal star-forming galaxies in a Mgas-star-formation rate (SFR) plane. A modified blackbody fit to the far-infrared--millimeter photometry results in a dust temperature of 37 K and a dust mass of Mdust = 1.5 x 10^8 Modot. The spatially-resolving CO(4-3) observations allow us to examine the kinematics of the host. The CO velocity field shows a clear rotation and is reproduced by a rotation-dominated disk model with a rotation velocity of 350 km/s and a half-light radius of 2.4 kpc. The CO spectral line energy distribution derived from the four CO transitions is similar to that of starburst galaxies, suggesting a high excitation condition. Comparison of molecular gas properties between the host and normal (main-sequence) galaxies at similar redshifts shows that they share common properties such as gas mass fraction, gas depletion timescale, gas-to-dust ratio, location in the Mgas-SFR (or surface density) relation, and kinematics, suggesting that long-duration GRBs can occur in normal star-forming environments at z ~ 2.

Impact of intrinsic defects on excitation dependent carrier lifetime in thick 4H-SiC studied by complementing microwave photoconductivity, free-carrier absorption and time-resolved photoluminescence techniques

Photoexcited carrier dynamics in 1014–1018 cm−3 density range was investigated by using complementary optical and microwave techniques. Bulk lifetime decrease from 4 μs to 460 ns with excitation and its increase with temperature were observed in bulk n-type 4H-SiC crystal. The latter data and modeling of excitation-dependent hole capture with subsequent electron capture provided the trap position at EV + 0.19 eV and electron (hole) lifetimes of 360 ns (100 ns), correspondingly, at high excitation conditions. Lifetime increase with temperature was observed due to the trap thermal activation and reduction of electron capture cross section. The trap origin was discussed in terms of silicon vacancy related and titanium point defects. Photoluminescence spectra in 24–300 K range revealed bound exciton luminescence and nitrogen-aluminum donor-acceptor pair band, which time-resolved and excitation dependent dynamics was analyzed.

Excitation Density Dependent Photoluminescence Quenching and Charge Transfer Efficiencies in Hybrid Perovskite/Organic Semiconductor Bilayers

AbstractThis study addresses the dependence of charge transfer efficiency between bilayers of methylammonium lead iodide (MAPI3) with PC61BM or poly(3,4‐ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) charge transfer layers on excitation intensity. It analyzes the kinetic competition between interfacial electron/hole transfer and charge trapping and recombination within MAPI3 by employing a range of optical measurements including steady‐state (SS) photoluminescence quenching (PLQ), and transient photoluminescence and absorption over a broad range of excitation densities. The results indicate that PLQ measurements with a typical photoluminescence spectrometer can yield significantly different transfer efficiencies to those measured under 1 Sun irradiation. Steady‐state and pulsed measurements indicate low transfer efficiencies at low excitation conditions (&lt;5E + 15 cm−3) due to rapid charge trapping and low transfer efficiencies at high excitation conditions (&gt;5E + 17 cm−3) due to fast bimolecular recombination. Efficient transfer to PC61BM or PEDOT:PSS is only observed under intermediate excitation conditions (≈1 Sun irradiation) where electron and hole transfer times are determined to be 36 and 11 ns, respectively. The results are discussed in terms of their relevance to the excitation density dependence of device photocurrent generation, impact of charge trapping on this dependence, and appropriate methodologies to determine charge transfer efficiencies relevant to device performance.

Molecular gas in AzTEC/C159: a star-forming disk galaxy 1.3 Gyr after the Big Bang

We studied the molecular gas properties of AzTEC/C159, a star-forming disk galaxy at z = 4.567, in order to better constrain the nature of the high-redshift end of the submillimeter-selected galaxy (SMG) population. We secured 12CO molecular line detections for the J = 2 →1 and J = 5 →4 transitions using the Karl G. Jansky Very Large Array (VLA) and the NOrthern Extended Millimeter Array (NOEMA) interferometer. The broad (FWHM ~ 750 km s−1) and tentative double-peaked profiles of the two 12CO lines are consistent with an extended molecular gas reservoir, which is distributed in a rotating disk, as previously revealed from [CII] 158 μm line observations. Based on the 12CO(2 →1) emission line, we derived L′CO=(3.4±0.6)×1010 K km s−1 pc2, which yields a molecular gas mass of MH2(αCO/4.3)=(1.5±0.3)×1011 M⊙ and unveils a gas-rich system with μgas(αCO/4.3)≡MH2/M⋆=3.3±0.7. The extreme star formation efficiency of AzTEC/C159, parametrized by the ratio LIR/L′CO=(216±80) L⊙ (K km s−1 pc2)−1, is comparable to merger-driven starbursts such as local ultra-luminous infrared galaxies and SMGs. Likewise, the 12CO(5 →4)/CO(2 →1) line brightness temperature ratio of r52 = 0.55 ± 0.15 is consistent with high-excitation conditions as observed in SMGs. Based on mass budget considerations, we constrained the value for the L′CO – H2 mass conversion factor in AzTEC/C159, that is, αCO=3.9−1.3+2.7 M⊙ K−1 km−1 s pc−2, which is consistent with a self-gravitating molecular gas distribution as observed in local star-forming disk galaxies. Cold gas streams from cosmological filaments might be fueling a gravitationally unstable gas-rich disk in AzTEC/C159, which breaks into giant clumps and forms stars as efficiently as in merger-driven systems and generates high gas excitation. These results support the evolutionary connection between AzTEC/C159-like systems and massive quiescent disk galaxies at z ~ 2.

Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

The radiative and non-radiative recombination carrier decay lifetimes in GaN epi-layers grown by metal-organic chemical vapour deposition technology on Si substrates were measured by contactless techniques of time-resolved photoluminescence and microwave-probed transients of photoconductivity. The lifetime variations were obtained to be dependent on growth regimes. These variations have been related to varied densities of edge dislocations associated with growth temperature. It has been also revealed that the lateral carrier lifetime and photoluminescence intensity distribution is determined by the formation of dislocation clusters dependent on the growth conditions. For low excitation level, the asymptotic component within the excess carrier decay transients is attributed to carrier trapping and anomalous diffusion through random-walk processes within dislocation cluster regions and barriers at dislocation cores. The two-componential decay process at high excitation conditions, where excess carriers may suppress barriers, proceeds through a nonlinear recombination, where band-to-band transitions determine the nonlinearity of the process, while the asymptotic component is ascribed to the impact of D-A pair PL within the long-wavelength wing of the UV-PL band.

Photo-induced droop in blue to red light emitting InGaN/GaN single quantum wells structures

The variation of the internal quantum efficiency (IQE) of single InGaN quantum well structures emitting from blue to red is studied as a function of the excitation power density and the temperature. By changing the well width, the indium content, and adding a strain compensation AlGaN layer, we could tune the intrinsic radiative recombination rate by changing the quantum confined Stark effect, and we could modify the carrier localization. Strong quantum confined Stark effect and carrier localization induce an increase in the carrier density and then favor Auger non-radiative recombination in the high excitation range. In such high excitation conditions with efficient Auger recombination, the variation of the IQE with the photo-excitation density P is ruled by a universal power law independent of the design: IQE = IQEMAX – a log10P with a close to 1/3. The temperature dependences of the different recombination mechanisms are determined. At low temperature, both quantum confined Stark effect and carrier localization trigger electron-electron repulsions and therefore the onset of the Auger effect. The increase in the value of coefficient C with changing temperature reveals indirect Auger recombination that relates to the interactions of the carriers with other phonons than the longitudinal optical one.

Charge Injection Mechanism at Heterointerfaces in CH3NH3PbI3 Perovskite Solar Cells Revealed by Simultaneous Time-Resolved Photoluminescence and Photocurrent Measurements.

Organic-inorganic hybrid perovskite solar cells are attracting much attention due to their excellent photovoltaic properties. In these multilayered structures, the device performance is determined by complicated carrier dynamics. Here, we studied photocarrier recombination and injection dynamics in CH3NH3PbI3 perovskite solar cells using time-resolved photoluminescence (PL) and photocurrent (PC) measurements. It is found that a peculiar slowdown in the PL decay time constants of the perovskite layer occurs for higher excitation powers, followed by a decrease of the external quantum efficiency for PC. This indicates that a carrier-injection bottleneck exists at the heterojunction interfaces, which limits the photovoltaic performance of the device in concentrator applications. We conclude that the carrier-injection rate is sensitive to the photogenerated carrier density, and the carrier-injection bottleneck strongly enhances recombination losses of photocarriers in the perovskite layer at high excitation conditions. The physical origin of the bottleneck is discussed based on the result of numerical simulations.