High-energy Electron Research Articles

Chassis engineering for high light tolerance in microalgae and cyanobacteria.

Oxygenic photosynthesis in microalgae and cyanobacteria is considered an important chassis to accelerate energy transition and mitigate global warming. Currently, cultivation systems for photosynthetic microbes for large-scale applications encountered excessive light exposure stress. High light stress can: affect photosynthetic efficiency, reduce productivity, limit cell growth, and even cause cell death. Deciphering photoprotection mechanisms and constructing high-light tolerant chassis have been recent research focuses. In this review, we first briefly introduce the self-protection mechanisms of common microalgae and cyanobacteria in response to high light stress. These mechanisms mainly include: avoiding excess light absorption, dissipating excess excitation energy, quenching excessive high-energy electrons, ROS detoxification, and PSII repair. We focus on the species-specific differences in these mechanisms as well as recent advancements. Then, we review engineering strategies for creating high-light tolerant chassis, such as: reducing the size of the light-harvesting antenna, optimizing non-photochemical quenching, optimizing photosynthetic electron transport, and enhancing PSII repair. Finally, we propose a comprehensive exploration of mechanisms: underlying identified high light tolerant chassis, identification of new genes pertinent to high light tolerance using innovative methodologies, harnessing CRISPR systems and artificial intelligence for chassis engineering modification, and introducing plant photoprotection mechanisms as future research directions.

AAPM WGTG51 Report 385: Addendum to the AAPM's TG-51 protocol for clinical reference dosimetry of high-energy electron beams.

An Addendum to the AAPM's TG-51 protocol for the determination of absorbed dose to water is presented for electron beams with energies between 4MeV and 22MeV ( ). This updated formalism allows simplified calibration procedures, including the use of calibrated cylindrical ionization chambers in all electron beams without the use of a gradient correction. New data are provided for electron beams based on Monte Carlo simulations. Implementation guidance is provided. Components of the uncertainty budget in determining absorbed dose to water at the reference depth are discussed. Specifications for a reference-class chamber in electron beams include chamber stability, settling, ion recombination behavior, and polarity dependence. Progress in electron beam reference dosimetry is reviewed. Although this report introduces some major changes (e.g., gradient corrections are implicitly included in the electron beam quality conversion factors), they serve to simplify the calibration procedure. Results for absorbed dose per linac monitor unit are expected to be up to approximately 2% higher using this Addendum compared to using the original TG-51protocol.

Recording and Revealing 2.5D Nanopatterned Hidden Information on Silk Protein Bioresists.

Nanopatterning on biomaterials has attracted significant attention as it can lead to the development of biomedical devices capable of performing diagnostic and therapeutic functions while being biocompatible. Among various nanopatterning techniques, electron-beam lithography (EBL) enables precise and versatile nanopatterning in desired shapes. Various biomaterials are successfully nanopatterned as bioresists by using EBL. However, the use of high-energy electron beams (e-beams) for high-resolutive patterning has incorporated functional materials and has caused adverse effects on biomaterials. Moreover, the scattering of electrons not absorbed by the bioresist leads to proximity effects, thus deteriorating pattern quality. Herein, EBL-based nanopatterning is reported by inducing molecular degradation of amorphous silk fibroin, followed by selectively inducing secondary structures. High-resolution EBL nanopatterning is achievable, even at low-energy e-beam (5keV) and low doses, as it minimizes the proximity effect and enables precise 2.5D nanopatterning via grayscale lithography. Additionally, integrating nanophotonic structures into fluorescent material-containing silk allows for fluorescence amplification. Furthermore, this post-exposure cross-linking way indicates that the silk bioresist can maintain nanopatterned information stored in silk molecules in the amorphous state, utilizing for the secure storage of nanopatterned information as a security patch. Based on the fabrication technique, versatile biomaterial-based nanodevices for biomedical applications can be envisioned.

Hysteresis in radio frequency capacitively coupled CF4 plasmas

Abstract Based on experiments and simulations, various plasma parameters are found to undergo a hysteresis as a function of the driving voltage amplitude in capacitively coupled CF4 discharges. Phase Resolved Optical Emission Spectroscopy reveals that the discharge operates in a hybrid combination of the drift-ambipolar and α-mode at low voltage. In this mode, the electric field and mean electron energy are high in the electronegative plasma bulk region. As the cross section for electron attachment is appreciable only at high electron energies, this mode results in strong negative ion production and keeps the electron density low as well as the mode of plasma operation stable, when the voltage is increased moderately. Increasing the driving voltage amplitude further ultimately induces a mode transition into a pure α-mode, once the electron density increases strongly. Decreasing the voltage again results in a reverse mode transition at a lower voltage compared to the previous mode transition, because the electron density is now initially high in the bulk and, thus, the bulk electric field and mean electron energy are low resulting in inefficient generation of negative ions via electron attachment. This keeps the electron density high even at lower driving voltages. This effect leads to the emergence of two steady states of plasma operation within a certain voltage range. The different electron energy distribution functions in these two states result in markedly different generation and density profiles of F atoms, with higher values occurring in the increasing voltage branch of the hysteresis. The ion flux and mean energy at the electrodes also differ. The voltage range, where the hysteresis occurs, is affected by the ion induced secondary electron coefficient (γ). A larger value of γ results in a shift of the hysteresis voltage range towards lower values.

Numerical investigation of discharge evolution and breakdown characteristics of ArF excimer lasers

Abstract The corona bar induced pre-ionization is a crucial preliminary process in the operation of ArF excimer lasers, directly impacting the uniformity and stability of output laser. However, the ultraviolet corona pre-ionization, as the mainstream method, is tightly coupled with the main discharge process, which complicates analysis. Here, we establish a numerical model of a single pulse discharge incorporating an external circuit to analyze the pre-ionization process and its influence on the breakdown characteristics. (1) By adopting detailed input parameters of photoionization model, we observe uniform and dispersed plasma propagation from the corona bar to the main gap. (2) An artificial boundary condition is proposed to investigate the phenomenological effect of high-energy electrons emission, emphasizing the influence of surface discharge along the cathode. (3) The differences between the two pre-ionization setup methods, photoionization and background electron density, are compared numerically. This study enhances the understanding of the pre-ionization process in ArF excimer lasers and provides theoretical insights for their optimization and design.

Impact of high-energy electron beam irradiation on piezoelectric properties of lead zirconate titanate

Abstract We measured the resonant and anti-resonant frequencies of lead zirconate titanate (PZT) elements at various temperatures and investigated the change in the electromechanical coupling coefficient to clarify the temperature dependence of the elements. Based on these results, we performed a 20 MeV electron beam irradiation experiment on the PZT elements. We found that the electromechanical coupling coefficient decreased as the cumulative energy absorption due to beam irradiation increased, even when the effect of the temperature rise due to beam irradiation was negligible.

Atomic Arrangement and Mechanical Properties of High-entropy Nonoxide Ceramics Simulated via Location Preference-based Disordered Random Structure

The cell structures and mechanical properties (i.e., hardness, Young's modulus, shear modulus, and Poisson's ratio) of (Hf0.2Zr0.2Ti0.2Nb0.2Ta0.2)C (HEC) and (Hf0.2Zr0.2Ti0.2Nb0.2Ta0.2)N (HEN) high-entropy ceramics were simulated by special quasi-random structure (SQS) and general random structure (GRS) with atomic occupation preference based on the first-principles density functional theory. The results show that compared to SQS, the cell structure constructed by GRS is more realistic, which is verified via scanning electron microscopy, high resolution transmission electron microscopy and energy dispersive spectroscopy. The mechanical properties simulated by GRS were also determined by microhardness and dynamic elastic modulus testers. The hardness, Young's modulus，shear modulus and Poisson's ratio predicted by GRS are 23.07GPa, 449.71GPa, 183.28 and 0.227 for HEC and 22.96GPa, 413.71GPa, 162.47 and 0.241 for HEN, which are in a reasonable agreement with the measured results (i.e., 22.05 ± 0.32GPa, 433 ± 12GPa, 172 ± 18GPa, 0.21 for HEC and 22.12 ± 0.13GPa, 372 ± 23GPa, 158 ± 11GPa, 0.23 for HEN). This work can provide a promising reference for preparing high-entropy non-oxide ceramics via the prediction.

Degradation analysis of GaN-based high–electron-mobility transistors under different stresses in semi-on state conditions

The large numbers of high-energy carriers that occur in semiconductor devices under semi-on state conditions can cause significant device degradation. The effects of different stresses on the electrical and trapping characteristics of GaN-based high-electron-mobility transistors (HEMTs) are investigated. Test results for GaN HEMTs under semi-on state conditions show that the electrical characteristics of these devices degrade to a certain extent after they are subjected to electrical pulse stress cycles with different drain voltage, frequencies, and duty cycles; a degree of degradation also occurs in the electrical characteristics of the devices when they are subjected to direct current electrical stresses. After electrical stress is applied, the absolute amplitude of the traps in the device increases, thus indicating an increase in the trap density. The results show that voltage is the main driver for device damage, with the current playing an accelerating role through its effects on device temperature or by supplying hot electrons; therefore, the drain voltage has the most significant effect on device degradation, which is mainly due to channel high-energy hot electron injection.

Time-dependent Stellar Flare Models of Deep Atmospheric Heating

Optical flares have been observed from magnetically active stars for many decades; unsurprisingly, the spectra and temporal evolution are complicated. For example, the shortcomings of optically thin, static slab models have long been recognized when confronted with the observations. A less incorrect—but equally simple—phenomenological T ≈ 9000 K blackbody model has instead been widely adopted in the absence of realistic (i.e., observationally tested) time-dependent, atmospheric models that are readily available. We use the RADYN code to calculate a grid of 1D radiative-hydrodynamic stellar flare models that are driven by short pulses of electron-beam heating. The flare heating rates in the low atmosphere vary over many orders of magnitude in the grid, and we show that the models with high-energy electron beams compare well to the global trends in flux ratios from impulsive-phase stellar flare, optical spectra. The models also match detailed spectral line-shape properties. We find that the pressure broadening and optical depths account for the broad components of the hydrogen Balmer γ lines in a powerful flare with echelle spectra. The self-consistent formation of the wings and nearby continuum level provides insight into how high-energy electron-beam heating evolves from the impulsive to the gradual decay phase in white-light stellar flares. The grid is publicly available, and we discuss possible applications.

Evolution of High-energy Electron Distribution in Pulsar Wind Nebulae

In this paper, we analyze the spectral energy distributions of 17 powerful (with a spin-down luminosity greater than 1035 erg s−1) young (with an age less than 15,000 yr) pulsar wind nebulae (PWNe) using a simple time-independent one-zone emission model. Our aim is to investigate correlations between model parameters and the ages of the corresponding PWNe, thereby revealing the evolution of high-energy electron distributions within PWNe. Our findings are as follows: (1) The electron distributions in PWNe can be characterized by a double power-law with a super-exponential cutoff. (2) As PWNe evolve, the high-energy end of the electron distribution spectrum becomes harder with the index decreasing from approximately 3.5 to 2.5, while the low-energy end spectrum index remains constant near 1.5. (3) There is no apparent correlation between the break energy or cutoff energy and the age of PWNe. (4) The average magnetic field within PWNe decreases with age, leading to a positive correlation between the energy loss timescale of electrons at the break energy or the high-energy cutoff, and the age of the PWN. (5) The total electron energy within PWNe remains constant near 2 × 1048 erg, while the total magnetic energy decreases with age.

Irradiation Effect in Thermoelectric Polymer Polyaniline Induced by High-Energy Electron Beam

A comprehensive investigation was conducted on the relationships between molecular structure, morphology and thermoelectric properties of HCl-doped polyaniline (PANi) nanorods subjected to 10[Formula: see text]MeV electron beam irradiation. Morphological and structural characterization revealed that the crystallinity of irradiated PANi nanorods remained almost unchanged, and minimal oxygen content was detected. This resulted in minimal alterations to the thermo-stability. In addition, the thermoelectric properties of PANi were enhanced. A maximum conductivity of 22.85[Formula: see text]S/cm was obtained at 50[Formula: see text]kGy, which was 1.46 times that of pristine PANi. Interestingly, the Seebeck coefficient reached a maximum of −3.56[Formula: see text][Formula: see text]V/K at 100[Formula: see text]kGy, indicating [Formula: see text]-type organic semiconductor properties. However, a peak power factor of 0.024[Formula: see text][Formula: see text]W[Formula: see text]m[Formula: see text] K[Formula: see text] was achieved with 60[Formula: see text]kGy irradiation, which was slightly enhanced compared to 0.018[Formula: see text][Formula: see text]W[Formula: see text]m[Formula: see text][Formula: see text]K[Formula: see text] for pristine PANi. These results demonstrate that PANi exhibits good irradiation resistance after irradiated with a dose of 100[Formula: see text]kGy. Thus, PANi could be used in high-[Formula: see text] ray (electron) environments, such as radioisotope thermoelectric generators (RTGs).

Effects of High Al Content on the Phase Constituents and Thermal Properties in NiCoCrAlY Alloys.

MCrAlY (M = Ni and/or Co) metallic coatings are essential for the protection of hot-end components against thermal and corrosion damage. Increasing the Al content is considered a feasible solution to improve the high-temperature performance of MCrAlY coatings. In this paper, the effects of high Al contents (12-20 wt.%) on the phase constituents and cast microstructures in MCrAlY alloys were studied by high-energy X-ray diffraction and electron microscopy techniques combined with phase equilibria calculations. High Al content improved the stability of β, σ, and α phases. Meanwhile, an evolution of the cast microstructure morphology from a dendrite structure to an equiaxed grain structure was observed. The thermal properties were analyzed, which were closely related to the phase constituents and solid-to-solid phase transitions at evaluated temperatures. This work is instructive for developing high-Al-content MCrAlY coatings for next-generation thermal barrier applications.

Energy Absorption and Beam Damage during Microfocus Synchrotron X-ray Diffraction.

In this study, we combine in situ fast differential scanning calorimetry (FDSC) with synchrotron X-ray measurements to study simultaneously the structure and thermophysical properties of materials. Using the example of the organic compound BCH-52, we show that the X-ray beam can heat the sample and induce a shift of the heat-flow signal. The aim of this paper is to investigate the influence of radiation on sample behavior. The calorimetric data is used to quantify the absorbed beam energy and, together with the diffraction data, reveal an irreversible damage of the sample. The results are especially important for materials with high absorption coefficients and for high-energy X-ray and electron beams. Our findings illustrate that FDSC combined with X-ray diffraction is a suitable characterization method when beam damage must be minimized.

Machine-learning-empowered identification of initial growth modes for 2D transition metal dichalcogenide thin films

In situ reflection high-energy electron diffraction (RHEED) is a powerful technique for monitoring surface states and offers invaluable insights into thin film growth. However, extracting hidden features and subtle changes from its vast data remains as a challenge. This work bridges the gap by employing machine learning (ML)-empowered RHEED analysis to elucidate the growth dynamics of two-dimensional (2D) transition metal dichalcogenide (TMDC) thin films grown under two distinct growth modes. Principal component analysis (PCA) and its modified processes were used to separate contributions of the graphene substrate and the MoSe2 film in the RHEED video. The ML-empowered RHEED analysis allowed us to effectively filter out the strong substrate signal and reconstructing RHEED videos solely for the MoSe2 films. This approach enabled detailed monitoring of film growth with unique features, and clearly distinguishing between the layer-by-layer growth mode and the island one. This work demonstrates the potentials of ML-empowered RHEED analysis for revealing complex growth dynamics of 2D TMDC materials, paving the way for advanced thin film monitoring and autonomous control in wider scope of thin film technologies.

Study on irradiation effect and damage mechanism in cascode GaN HEMT irradiated by 10 MeV electron

This study investigated the irradiation effect of cascode-structure GaN HEMT (High Electron Mobility Transistor) devices, employing high-energy electrons with an energy of 10 MeV and irradiation doses ranging from 5 to 80 Mrad(Si). The variation of electrical properties of the device under annealing condition was analyzed. Geant4 and TCAD simulations were used to analyze the irradiation effect and damage mechanisms. The results show that the threshold voltage has obvious negative drift and the drain current increases after irradiation. The threshold voltage deviation amplitude of the device increases with the increase of irradiation dose, and the maximum deviation is 1.41V. Annealing at high temperatures (80 °C, 120 °C and 145 °C) partially restores the electrical properties, with a 0.49 V restoration in threshold voltage at 145 °C. Geant4 simulations reveal that enhanced Si MOSFET is more susceptible to total dose effects. TCAD simulations of enhanced Si MOSFET devices demonstrate an increase in electric field intensity, trapped electron concentration, and hole concentration in Si and SiO2 layers with the increase of irradiation dose. These findings can provide support for the space application and irradiation hardening of cascode GaN HEMT devices.

Effects of High-Energy Electron Beam-Modified Fumed Silica on the Structure and Properties of Silicone Rubber Composites

Effects of High-Energy Electron Beam-Modified Fumed Silica on the Structure and Properties of Silicone Rubber Composites

A Model of High-Energy Electron Flows in GLONASS Orbits

A Model of High-Energy Electron Flows in GLONASS Orbits

Source of the Fe Kalpha emission in T Tauri stars. Radiation induced by relativistic electrons during flares. An application to RY Tau

T Tauri stars (TTSs) are magnetically active stars that accrete matter from the inner border of the surrounding accretion disk; plasma becomes trapped into the large-scale magnetic structures and falls onto the star, heating the surface through the so-called accretion shocks. The X-ray spectra of the TTSs show prominent Fe Kalpha fluorescence emission at 6.4 keV (hereafter, Fe Kalpha emission) that cannot be explained in a pure accretion scenario because its excitation requires significantly more energy than the maximum available through the well-constrained free-fall velocity. Neither can it be produced by the hot coronal plasma. TTSs display all signs of magnetic activity, and magnetic reconnection events are expected to occur frequently. In these events, electrons may become accelerated to relativistic speeds, and their interaction with the environmental matter may result in Fe Kalpha emission. It is the aim of this work to evaluate the expected Fe Kalpha emission in the context of the TTS research and compare it with the actual Fe Kalpha measurements obtained during the flare detected while monitoring RY Tau with the XMM-Newton satellite. The propagation of high-energy electrons in dense gas generates a cascade of secondary particles that results in an electron shower of random nature, whose evolution and radiative throughput was simulated in this work using the Monte Carlo code PENELOPE. A set of conditions representing the environment of the TTSs where these showers may impinge was taken into account to generate a grid of models that can aid the interpretation of the data. The simulations show that the electron beams produce a hot spot at the point of impact; strong Fe Kalpha emission and X-ray continuum radiation are produced by the spot. This emission is compatible with RY Tau observations. The Fe Kalpha emission observed in TTSs could be produced by beams of relativistic electrons accelerated in magnetic reconnection events during flares.

The Effect of the Initial Phase of a Tightly Focused Laser Pulse on the Emission Characteristics of High-Energy Electrons

The Effect of the Initial Phase of a Tightly Focused Laser Pulse on the Emission Characteristics of High-Energy Electrons

First-principles screening of XSbF3 (X = Ba and Ra) fluoroperovskites: an insight into structural, optoelectronic and thermal properties

This work presents a computational study of the physical properties such as structural, electronic, optical and thermal properties of XSbF3 (X = Ba and Ra) fluoroperovskites. The calculations were performed using the density functional theory (DFT) calculations in conjunction with Quantum Espresso code. The stability of the crystal structure XSbF3 compounds is determined by binding energy (Eb) computations. The Eb values for BaSbF3 and RaSbF3 compounds are −19.25 and −20.04eV respectively, indicating that both studied compounds are stable. The optimized lattice constants for BaSbF3 and RaSbF3 compounds are 5.03 and 5.06 Å, respectively. The evaluation of electronic properties is conducted by electronic band structure, total density of states (DOS), and partial density of states (PDOS). It is observed from the PDOS plots that the p-states of Sb and F whereas the d-states of X atoms have the major contribution in the formation of the band structure. Various optical properties have been computed and compared. The static value of ε10 highlights the metallic nature of the studied compounds while RaSbF3 stands out for having the highest recorded value of ε20. The maximum nω values for BaSbF3 and RaSbF3 are 8.46 and 6.86 respectively indicating their potential for photoelectric applications. Furthermore when examining the properties it is evident that the BaSbF3 compound stands out as a material for energy storage because of its higher electron energy at 2.36 KJ/N.mol and lower electron free energy of −2.55 KJ/N.mol compared to the RaSbF3 compound. On the other hand, the RaSbF3 compound is an efficient material for catalysis due to its high ability to absorb heat energy from the external source, as compared to the BaSbF3 compound. This study is the first computational investigation of XSbF3 (X is Ba and Ra) compounds, which provides valuable insights into the physical properties of sb-based fluroperovskites and their potential applications.