High-density Nonvolatile Memory Research Articles

Wrinkled Rhenium Disulfide for Anisotropic Nonvolatile Memory and Multiple Artificial Neuromorphic Synapses.

Two-dimensional materials are emerging as potential solutions for high-density nonvolatile memory and efficient neuromorphic computing. However, integrating multidimensional memory and an ideal linear weight updating synapse in a simple device configuration to achieve versatile biomimetic neuromorphic systems remains challenging. Here, we introduce a wrinkled rhenium disulfide (ReS2) transistor, where the wrinkled structure facilitates the carrier trapping/detrapping at the dielectric interface, thus enabling the fusion of nonvolatile memory and both electronic and optoelectronic synaptic functionalities. As a nonvolatile memory, anisotropic wrinkled ReS2 can yield three distinct sets of data across three crystal orientations under identical programming operations. Each set demonstrates exceptional retention and endurance properties. As a neuromorphic synapse, it realizes the linear and symmetric updates of conductance states up to 9 bits and 8 bits, the ultra-low-energy consumption of 75 fJ and 2.5 pJ under the electrical and optical stimuli, respectively. The artificial neural network (ANN) based on electronic synapses gives a superior recognition accuracy of 92.9% for the original handwritten digits. The anisotropic synaptic responses and multiwavelength sensitivities of optoelectronic synapses enable them to execute advanced memory and recognition functions for complex images that encompass a variety of pattern features or color information. This underscores its substantial potential for integration into efficient biomimetic visual systems.

Highly tunable skyrmion-like polar nanodomains for high-density ferroelectric hard disks

Emerging topological polar domains have a wide range of potential applications in electronic devices. It is critical to accurately manipulate these topological domains by electrical fields and explore their exotic properties for making more energy-efficient high-density non-volatile memories. Herein, we demonstrate that skyrmion-like polar nanodomains appear at room temperature in SrTiO3/PbTiO3 bilayer heterostructures by balancing the elastic and electrostatic energies via varying the SrTiO3 capping layer thickness. These polar nanodomains, stable at room temperature, can be electrically written, erased, and rewritten into the bilayer by applying an appropriate bias on the conductive tip of an atomic force microscope. The lateral size and location of these polar nanodomains can be precisely controlled. Moreover, ring-shaped conductive domain walls are observed around these polar nanodomains, with on/off ratios of more than two orders of magnitude with respect to the ferroelectric background. Based on these characteristics, the polar nanodomains can be created, erased, and probed electrically, suggesting applications for high-density ferroelectric hard disks.

(Invited) Novel Neuromorphic Computing Paradigms Enabled By Emerging Memory Devices

Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are being developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer rich device physics that can be leveraged for the implementation of novel computing paradigms. This paper will talk about three such emerging memory technologies: Vertical-Thin Film Transistors-Resistive Random Access Memory (V-TFT-RRAMs), Gated-RRAMs, and Ferroelectric Field Effect transistors (FeFETs). A comparative studies of various conventional neuromorphic computing approaches that can be implemented using these devices will be discussed. Finally, materials and device requirements and pending challenges will be discussed by successful realization of the proposed computing approaches. Implementation of Artificial Intelligence and Machine Learning algorithms on conventional Von-Neumann computing architectures are crippled by the memory-wall bottleneck. To overcome these issues, novel computing architectures with high-bandwidth memories, in-memory computing, and near-memory computing capabilities are getting developed. Almost all of these architectures will benefit from high-density on-chip non-volatile memories, offered by the emerging non-volatile memory devices. Additionally, emerging memory devices offer a rich set of device physics that can be leveraged for the implementation of novel computing paradigms. This paper will talk about three such emerging memory technologies: Vertical-Thin Film Transistors-Resistive Random Access Memory (V-TFT-RRAMs), Gated-RRAMs, and Ferroelectric Field Effect Transistors (FeFETs). A comparative studies of various unconventional and brain-inspired neuromorphic computing approaches that can be implemented using these devices will be discussed. Finally, materials and device requirements and pending challenges will be discussed for these device technologies.

Effect of the Temperature on the Performance and Dynamic Behavior of HfO2-Based Rram Devices

Over the past decades, the demand for semiconductor memory devices has been steadily increasing, and is currently experiencing an unprecedented boost due to the development and expansion of artificial intelligence. Among emerging high-density non-volatile memories, resistive random-access memory (RRAM) is one of the best recourses for all kind of applications, such as neuromorphic computing or hardware security [1]. Although many materials have been evaluated for RRAM development, some of them with excellent results, HfO2 is one of the established materials in CMOS domain due to its compatibility with standard materials and processes [2].The main goal of this work is to study the switching capability and stability of HfO2-based RRAMs, as well as to explore their ability in the field of analogue applications, by analyzing the evolution of the resistance states that allow multilevel control. Indeed, analogue operation is a key point for achieving electronic neural synapses in neuromorphic systems, with synaptic weight information encoded in the different resistance states. This research has been carried out over a wide temperature range, between 40 and 340 K, as we are interested in testing the extent to which performance is maintained or modified, with a view to designing neuromorphic circuits that are also suitable in the low-temperature realm. We aim to prove that these simple, fast, high integration density structures can also be used in circuits designed for specific applications, such as aerospace systems.The RRAM devices studied in this work are TiN/Ti/8 nm-HfO2/TiN metal-insulator-metal (MIM) capacitors. Dielectric layers were atomic layer deposited (ALD). It has been demonstrated that the Ti coat in the top electrode acts as a scavenger that absorbs oxygen atoms from the HfO2 layer, and facilitates the creation of conductive filaments of oxygen vacancies [3]. In fact, the oxygen reservoir capability of Ti is well known, as it is able to attract and release oxygen atoms from or to the HfO2 layer during the RRAM operation [4]. The clustering of vacancies extends through the entire thickness of the oxide and, after an electroformig step, it joins the upper and lower electrodes and the device reaches the low resistance state (LRS). By applying adequate electrical signals, the filaments can be partially dissolved, which brings the device into the high-resistance state (HRS), with lower current values. The set process brings the device to the LRS state, while the reset one brings it to the HRS. The dependence of electrical conductivity on external applied electrical excitation allows triggering the device between the both states in a non-volatile manner [5].The experimental equipment used consisted of a Keithley 4200-SCS semiconductor parameter analyzer and a Lake Shore cryogenic probe station. Fig.1 shows current-voltage cycles measured at different temperatures; the averages values at each temperature, both in logarithmic and linear scale, are also shown. The functional window increases as temperature decreases.The evolutions of set and reset voltage values with temperature are depicted in Fig.2, whereas the current values (measured at 0.1 V) corresponding to the LRS and HRS can be seen in Fig.3. LRS resistance decreases as temperature increases, in agreement with semiconductor behaviour, probably due to a hopping conduction mechanism. Both set and reset voltages decrease as temperature increases; the reset process is smoother at high temperatures. The reduction in reset voltage variability as temperature increases is very notable.Finally, Fig. 4 shows a picture of the transient behaviour; in the right panel of the same figure, the amplitudes of the current transients in the reset state have been included in the external loop.To sum up, the resistive switching phenomena is studied in a wide temperature range. The LRS shows semiconducting behavior with temperature, most likely related to a hopping conduction mechanism. Switching voltages decrease as temperature increases, with a notable reduction in reset voltage variability. An excellent control of intermediate resistance state is shown through current transients at several voltages in the reset process.REFERENCES[1] M. Asif et al., Materials Today Electronics 1, 100004 (2022).[2] S. Slesazeck et al., Nanotechnology 30, 352003 (2019).[3] Z. Fang et al., IEEE Electron Device Letters 35, 9, 912-914 (2014).[4] H. Y. Lee et al., IEEE Electron Device Letters 31, 1, 44-46 (2010).[5] D. J. Wouters et al., Proceedings of the IEEE 103, 8, 1274-1288 (2015). Figure 1

Sol-Gel Derived ZnO Thin Films with Nonvolatile Resistive Switching Behavior for Future Memory Applications

Herein we report on a facile sol-gel spin-coating technique to fabricate ZnO thin films that grow preferentially along the (002) plane on FTO substrates. By employing the magnetron sputtering technique to deposit a tungsten (W) top metal electrode onto these ZnO thin films, we successfully realize a W/ZnO/FTO memory device that exhibits self-rectifying and forming-free resistive switching characteristics. Notably, the as-prepared device demonstrates impressive nonvolatile and bipolar resistive switching behavior, with a high resistance ratio (RHRS/RLRS) exceeding two orders of magnitude at a reading voltage of 0.1 V. Moreover, it exhibits ultralow set and reset voltages of approximately +0.5 V and −1 V, respectively, along with exceptional durability. In terms of carrier transport properties, the low resistance state of the device is dominated by ohmic conduction, whereas the high resistance state is characterized by trap-controlled space-charge-limited current conduction. This work highlights the potential of the ZnO-based W/ZnO/FTO memory device as a promising candidate for future high-density nonvolatile memory applications.

Developing fatigue-resistant ferroelectrics using interlayer sliding switching.

Ferroelectric materials have switchable electrical polarization that is appealing for high-density nonvolatile memories. However, inevitable fatigue hinders practical applications of these materials. Fatigue-free ferroelectric switching could dramatically improve the endurance of such devices. We report a fatigue-free ferroelectric system based on the sliding ferroelectricity of bilayer 3R molybdenum disulfide (3R-MoS2). The memory performance of this ferroelectric device does not show the wake-up effect at low cycles or a substantial fatigue effect after 106 switching cycles under different pulse widths. The total stress time of the device under an electric field is up to 105 s, which is long relative to other devices. Our theoretical calculations reveal that the fatigue-free feature of sliding ferroelectricity is due to the immobile charge defects in sliding ferroelectricity.

Multilevel resistive switching in hydrothermally synthesized FeWO4 thin film-based memristive device for non-volatile memory application

The memristors offer significant advantages as a key element in non-volatile and brain-inspired neuromorphic systems because of their salient features such as remarkable endurance, ability to store multiple bits, fast operation speed, and extremely low energy usage. This work reports the resistive switching (RS) characteristics of the hydrothermally synthesized iron tungstate (FeWO4) based thin film memristive device. The detailed physicochemical analysis was investigated using Rietveld’s refinement, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM) techniques. The fabricated Ag/FWO/FTO memristive device exhibits bipolar resistive switching (BRS) behavior. In addition, the devices exhibit negative differential resistance (NDR) at both positive and negative bias. The charge-flux relation portrayed the non-ideal or memristive nature of the devices. The reliability in the RS process was analyzed in detail using Weibull distribution and time series analysis techniques. The device exhibits stable and multilevel endurance and retention characteristics which demonstrates the suitability of the device for the high-density non-volatile memory application. The current conduction of the device was dominated by Ohmic and trap controlled-space charge limited current (TC-SCLC) mechanisms and filamentary RS process responsible for the BRS in the device. In a nutshell, the present investigations reveal the potential use of the iron tungstate for the fabrication of memristive devices for the non-volatile memory application.

Fluorinated Quinoxaline-Based Conjugated Polymers for High-Density Nonvolatile Memory Devices

Fluorinated Quinoxaline-Based Conjugated Polymers for High-Density Nonvolatile Memory Devices

Structural and electrical characteristics of Zr-doped HfO2 (HZO) thin films deposited by atomic layer deposition for RRAM applications

In this study, Zr-doped HfO2 (HZO) based resistive random-access memory (RRAM) device were fabricated. The Hf:Zr (1:1) ratio in the HZO films were controlled by changing the HfO2 and ZrO2 cycle ratio during the atomic layer deposition (ALD) process. Next, we studied the structural and electrical properties of the Au/HZO/TiN RRAM device structure. The RRAM devices exhibits an excellent resistance ratio of the high resistance state (HRS) to the low resistance state (LRS) of ~103 A, and as well as good endurance (300 cycles) and retention (>103 s), respectively. Further, the device showed different conduction mechanism in LRS and HRS modes. The lower biased linear region is dominated by ohmic conductivity, whereas the higher biased nonlinear region is dominated by a space charge limited current conduction. This device is suitable for application in future high-density nonvolatile memory RRAM devices.

Strain engineering of Bi2OS2 ultrathin films: electronic and ferroelectric properties

The non-monotonous relationship of ferroelectric polarization with strain can be attributed to distinct atomic coordination environments in Bi2OS2, which is different from a nearly monotonous trend of ferroelectricity-stabilized energy.

High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In2Se3/MoTe2 van der Waals heterostructures.

Ferroelectric polarization-controlled band alignment can be realized in van der Waals heterostructures (vdWHs), which can be used to create new types of ferroelectric tunnel junctions (FTJs). In this work, we design six probable configurations of two-dimensional vdWHs based on a two-dimensional α-In2Se3 ferroelectric material which has two opposite polarization states P↑ and P↓, and the semiconductor MoTe2. First-principles calculations show robust ferroelectric polarization-controlled switching behavior between the high conductance state in configuration AA-P↓ and the low conductance state in configuration AA-P↑ in the most stable AA stacked vdWHs. Based on this vdWH, a two-dimensional transverse FTJ with AA-P↓ or AA-P↑ as the tunneling barrier and (In0.5Sn0.5)2Se3 monolayers (n-type doped) as electrodes is designed. The tunneling electroresistance ratio of the FTJs at the Fermi level reaches 1.22 × 104% when the tunneling barrier contains two repeating units N = 2 and can be greatly increased by increasing the thickness of the ferroelectric layer. Analysis of the work function, charge redistribution, and local density of states is performed to interpret the above phenomena. The findings suggest the great potential of the AA stacked α-In2Se3/MoTe2 vdWH in the design of high-performance FTJs and application in high-density non-volatile memory devices.

Ultra-High-Density Ferroelectric Array Formed by Sliding Ferroelectric Moiré Superlattices.

2D van der Waals (vdW) materials offer infinite possibilities for constructing unique ferroelectrics through simple layer stacking and rotation. In this work, we stack nonferroelectric GeS2 and ferroelectric CuInP2S6 to form heterostructures by combining sliding ferroelectric polarization with displacement ferroelectric polarization to achieve multiple polarization states. First-principles calculations reveal that the polarization reversal of the CuInP2S6 component in the GeS2/CuInP2S6/GeS2 heterostructure can simultaneously drive the switching of sliding ferroelectric polarization, displaying a robust coupling of the two polarizations and leading to the overall polarization switching. Based on this, ferroelectric arrays with a density of 6.55 × 1012 cm-2 (equivalent to a storage density of 0.7 TB cm-2) were constructed in a moiré superlattice, and the polarization strength of array elements was 11.77 pC/m, higher than that of all reported 2D vdW out-of-plane ferroelectrics. High density, large polarization, and electrically switchable array elements in ferroelectric arrays provide unprecedented opportunities to design 2D high-density nonvolatile ferroelectric memories.

Self‐assembled vapor-transport-deposited SnS nanoflake-based memory devices with synaptic learning properties

The most salient features of resistive switching (RS) devices are low energy consumption, fast switching speed, and high-density integration, which render them promising candidates for realizing non-volatile memory and artificial synaptic devices. However, the growth of functional switching layers for RS devices needs innovative deposition techniques. Herein, we utilize a high-throughput vapor-transport-deposition (VTD) technique for synthesizing self-assembled tin-sulfide (SnS) nanoflakes, which are then used as a switching layer to fabricate an RS device. First principle calculations are conducted to understand the optoelectronic properties of SnS by employing density functional theory. The proposed Ag/SnS/Pt memory device exhibits substantial merits, including low-switching voltages (VSET: 0.22 V and VRESET: −0.20 V), suitable ON/OFF ratio (∼259), excellent endurance (106), and extended memory retention (106 s) characteristics. In addition, RS stochasticity is modeled using statistical time-series analysis via Holt’s exponential smoothing. Interestingly, the device can emulate multiple synaptic functionalities, including potentiation, depression, paired-pulse facilitation, paired-pulse depression, excitatory postsynaptic current, inhibitory postsynaptic current, and advanced spike-timing dependent plasticity rules. Moreover, the proposed synaptic device can detect the edge of images by utilizing a convolutional neural network. The unique and efficient VTD-SnS-based device will be a potential candidate for high-density non-volatile memory and neuromorphic computing applications.

Multivalued Memory via Freezing of Super-Hard Magnetic Domains in a Quasi 2D-Magnet.

The design of high-density non-volatile memories is a long-standing dream, limited by conventional storage "0" or "1" bits. An alternative paradigm exists in which regions within candidate materials can be magnetized to intermediate values between the saturation limits. In principle, this paves the way to multivalued bits, vastly increasing storage density. Single-molecule magnets, are good examples offering transitions between intramolecular quantum levels, but require ultra-low temperatures and limited relaxation time between magnetization states. It is showed here that the quasi 2D-Ising compound BaFe2 (PO4 )2 overcomes these limitations. The combination of giant magneto-crystalline anisotropy, strong ferromagnetic exchange, and strong intrinsic pinning creates remarkably narrow magnetic domain walls, collectively freezing under Tf ≈15K. This results in a transition from a soft to a super-hard magnet (coercive force > 14T). Any magnetization can then be printed and robustly protected from external fields with an energy barrier >9T at 2K.

Field-free spin-orbit torque switching assisted by in-plane unconventional spin torque in ultrathin [Pt/Co

Electrical manipulation of magnetization without an external magnetic field is critical for the development of advanced non-volatile magnetic-memory technology that can achieve high memory density and low energy consumption. Several recent studies have revealed efficient out-of-plane spin-orbit torques (SOTs) in a variety of materials for field-free type-z SOT switching. Here, we report on the corresponding type-x configuration, showing significant in-plane unconventional spin polarizations from sputtered ultrathin [Pt/Co]N, which are either highly textured on single crystalline MgO substrates or randomly textured on SiO2 coated Si substrates. The unconventional spin currents generated in the low-dimensional Co films result from the strong orbital magnetic moment, which has been observed by X-ray magnetic circular dichroism (XMCD) measurement. The x-polarized spin torque efficiency reaches up to −0.083 and favors complete field-free switching of CoFeB magnetized along the in-plane charge current direction. Micromagnetic simulations additionally demonstrate its lower switching current than type-y switching, especially in narrow current pulses. Our work provides additional pathways for electrical manipulation of spintronic devices in the pursuit of high-speed, high-density, and low-energy non-volatile memory.

Controllable coexistence of threshold and non-volatile crosspoint memory for highly linear synaptic device applications

A highly reliable and versatile resistive memory device that demonstrates threshold and non-volatile memory (NVM) switching behaviour depending on the compliance current (CC) modulation was utilised by doping a semiconducting (Si) material into a high-k (HfO x ) film with highly linear synaptic behaviour. The device shifted towards volatile switching at a CC less than 1 µA and exhibited NVM behaviour at a CC limit above 10 µA. A 3-bit/cell data storage capability on RESET voltage modulation was implemented for high-density memory application. The device exhibited excellent programming linearity of potentiation/depression responses up to 10 000 pulses compatible with fast pulse (100 ns) with good I ON/I OFF ratio (>103), stable data retention capability (105 s) at 85 °C and high WRITE endurance (∼107 cycles) with a pulse width of 200 ns. The neuromorphic applications were successfully emulated through neural network simulations using the experimentally calibrated data of the Si-doped HfO x resistive cross-point devices. Simulation results revealed a low nonlinearity of 0.03 with 98.08% pattern recognition accuracy. The estimated results revealed the potential of the device as a low-power selector and high-density NVM storage in large-scale crossbar array in future neuromorphic computing applications.

Magnetic-field-controlled spin valve and spin memory based on single-molecule magnets

A single-molecule magnet is a long-sought-after nanoscale component because it can enable us to miniaturize nonvolatile memory storage devices. The signature of a single-molecule magnet is switching between two bistable magnetic ground states under an external magnetic field. Based on this feature, we theoretically investigate a magnetic-field-controlled reversible resistance change active at low temperatures in a molecular magnetic tunnel junction, which consists of a single-molecule magnet sandwiched between a ferromagnetic electrode and a normal metal electrode. Our numerical results demonstrate that the molecular magnetism orientation can be manipulated by magnetic fields to be parallel/antiparallel to the ferromagnetic electrode magnetization. Moreover, different magnetic configurations can be “read out” based on different resistance states or different spin polarization parameters in the current spectrum, even in the absence of a magnetic field. Such an external magnetic field-controlled resistance state switching effect is similar to that in traditional spin valve devices. The difference between the two systems is that one of the ferromagnetic layers in the original device has been replaced by a magnetic molecule. This proposed scheme provides the possibility of better control of the spin freedom of electrons in molecular electrical devices, with potential applications in future high-density nonvolatile memory devices.

General Theory for Bilayer Stacking Ferroelectricity.

Two-dimensional (2D) ferroelectrics, which are rare in nature, enable high-density nonvolatile memory with low energy consumption. Here, we propose a theory of bilayer stacking ferroelectricity (BSF), in which two stacked layers of the same 2D material, with different rotation and translation, exhibit ferroelectricity. By performing systematic group theory analysis, we find all the possible BSF in all 80 layer groups (LGs) and discover the rules about the creation and annihilation of symmetries in the bilayer. Our general theory can not only explain all the previous findings (including sliding ferroelectricity), but also provide a new perspective. Interestingly, the direction of the electric polarization of the bilayer could be totally different from that of the single layer. In particular, the bilayer could become ferroelectric after properly stacking two centrosymmetric nonpolar monolayers. By means of first-principles simulations, we predict that the ferroelectricity and thus multiferroicity can be introduced to the prototypical 2D ferromagnetic centrosymmetric material CrI_{3} by stacking. Furthermore, we find that the out-of-plane electric polarization in bilayer CrI_{3} is interlocked with the in-plane electric polarization, suggesting that the out-of-plane polarization can be manipulated in a deterministic way through the application of an in-plane electric field. The present BSF theory lays a solid foundation for designing a large number of bilayer ferroelectrics and thus colorful platforms for fundamental studies and applications.

ANSA: Adaptive Near-Sensor Architecture for Dynamic DNN Processing in Compact Form Factors

Advanced edge sensing/computing devices, such as AR/VR devices, have a uniquely challenging adaptive baseline workload and camera sensor structure. These devices must process images in real-time from multiple sensors, placing a large burden on a typical centralized mobile SoC processor. Augmenting the sensors with a package-integrated near-sensor processor can improve the device’s processing performance as well as reduce energy consumption. This near-sensor processor must adapt to the dynamic workloads, fit within a limited silicon footprint and energy envelope, and satisfy the real-time requirement. In this work, we present ANSA, a near-sensor processor architecture supporting flexible processing schemes and dataflows to maintain high efficiency for dynamic CNN workloads. ANSA is scalable to sub-mm2 sizes to match the footprint of advanced image sensors. ANSA supports module-level power gating to adapt the compute capacity to dynamic workloads. Finally, ANSA leverages recent advancements in high-density non-volatile memory and 3D packaging to support weight storage within the area constraints of an image sensor. Overall, ANSA achieves inference energy consumption up to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$30\times $ </tex-math></inline-formula> lower than a standard SIMD baseline. Additionally, our design’s scalability allows it to achieve up to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.76\times $ </tex-math></inline-formula> lower average inference energy at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$4.5\times $ </tex-math></inline-formula> lower silicon area compared to competing edge accelerator designs.

Enhanced tunneling electroresistance effect in Pt/BiAlO3/Pt ferroelectric tunnel junctions by a graphene interlayer

Realizing a large tunneling electroresistance (TER) effect with a low ON-state resistance-area product (RAP) is essential for the applications of ferroelectric tunnel junctions (FTJs) in information storage. Herein, taking Pt/BiAlO3/Pt (Pt/BAO/Pt) FTJs as examples, we theoretically demonstrate that a giant TER ratio of about 1458%, which is comparable to most van der Waals tunnel junctions, can be achieved by switching the electric polarization of ferroelectric BAO(0001) barrier due to the reversible metallization of ferroelectric in conjunction with the Schottky barrier. More interestingly, with the effective modulation on barrier height and width via polarization reversal, an enhanced TER effect close to 104% can be obtained by inserting a graphene monolayer into right (or left) Pt/BAO interface of the FTJs and the writing endurance of the FTJ memories is expected to be significantly improved. Furthermore, the calculated ON-state RAPs in all three FTJ devices are not more than 100 Ω μm2. These fascinating findings suggest that the proposed BAO-based FTJs hold great potential for designing next-generation nanoscale high-density and low-power nonvolatile memories with excellent performance.