High Current Switching Research Articles

Pulse current injection platform with consecutive early-time and intermediate-time high-altitude electromagnetic pulse conducted currents for immunity test of electrical equipment.

High-altitude electromagnetic pulse (HEMP) has attracted considerable attention for its influence on electrical equipment. HEMP is divided into three parts: early time HEMP (E1), intermediate-time HEMP (E2), and late-time HEMP (E3). Most studies focused on E1 alone, while few investigated others. However, the electrical equipment may be disturbed by more than one part since these three parts co-exist in a HEMP environment. The pulse current injection (PCI) test is an effective immunity test method for evaluating the sensitivity and susceptibility of electrical equipment. To investigate the responses of electrical equipment excited by the consecutive E1 and E2 and compare with those under the individual E1 or E2, this paper builds a PCI platform that can carry out PCI tests with the consecutive E1 and E2 conducted current. To output the E1 current and the E2 current consecutively, which exhibit significant differences in the rise time (20ns and 1.5 μs), peak current (2500 and 250A), and full width at half maximum (FWHM, 500-550ns and 3-5ms), an E1&E2 coupler with a fast-closing high-current trigger switch is designed in this paper. Finally, some 10-kV epoxy insulators are tested in the developed platform, which shows the capacity of the proposed platform to test the immunity of electrical equipment with the consecutive E1 and E2 conducted current.

A gas spark switch electrode impact pressure test platform.

The discharge arc of a high-current gas spark switch has a strong mechanical effect on the electrode and adjacent objects. The measurement of this mechanical effect on the electrode plays a very important role in switch design and the theoretical study of spark discharge. However, in traditional stress measurement systems, the spatial electromagnetic interference caused by the discharge and the high electrode voltage affects the measurement accuracy and can even damage the experimental instrument. In this paper, an electrode impact stress measurement system based on PVDF piezoelectric film is designed to measure the electrode stress under a strong spatial electromagnetic field and high voltage. The experimental results show that the system can measure the impact pressure of high-voltage and high-current gas spark switch electrodes. The starting time of the stress measurement waveform shows that the shock to the electrode is formed in the initial stage of current buildup. The measured results clearly show the high magnetic field force component in the electrode impact pressure waveform. The shock waveforms induced by different pulse capacitor values, breakdown voltages, and loads are examined. It is found that the shock stress waveforms applied to the electrodes are affected by the peak value of the current, dI/dt, and the discharge duration.

Combined Solid-State Closing Switch for High-Current Pulse Switching

Combined Solid-State Closing Switch for High-Current Pulse Switching

High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel

High Current Density Diamond Photoconductive Semiconductor Switches With a Buried, Metallic Conductive Channel

Bifunctionalized polyamides based on quinoxaline structure for durable electrochromic display and memory storage

With the aim to obtain multifunctional durable electrochromic (EC) devices, we propose an effective strategy by introducing weak electron acceptor segment with suitable bandgap and oxidation potential. A series of quinoxaline-based units polyamides (PAs) (denoted as T2BPA-CA, T2BPA-OA, T2BPA-TP, and T2BPA-SA) were prepared from a novel donor–acceptor-donor (D-A-D) type diamine with weak electron acceptor quinoxaline and connected with two methoxyl-substituted donor triphenylamine, 10,13-bis[4-aminophenyl (4-methoxyphenyl) amino]-dibenzo[a,c]phenazine, and four dicarboxylic acids, which are high soluble in various organic solvents and exhibit excellent thermostability. Furthermore, the T2BPA-SA thin film exhibits excellent EC performance with outstanding optical contrast (50 %), high coloration efficiency (230 cm2 C−1) and impressive cycle stability (optical contrast remains 80 % over 1400 cycles) in the NIR range. Meanwhile, all of these PAs are served as memristors and exhibit typical nonvolatile ternary memory, realizing an accessible threshold voltage of −0.65 V, a retention time of more than104 s and high current switch ratio (103.52:102.43:1). Overall, this work implies the great potential of these PAs in EC displays and memory storage devices.

High-performance single crystal diamond pixel photodetector with nanosecond rise time for solar-blind imaging

Solar-blind ultraviolet imaging detector is widely applied in many commercial and military fields, such as missile warning, guidance, ultraviolet communication, biomedical analysis, and police reconnaissance. High-performance pixel photodetector is the core of imaging technology. Therefore, its construction attracts intensive attentions in recent years. In this work, 8 × 8 planar pixels were constructed on high quality single crystal diamond using ultraviolet direct writing lithography. A typical pixel photodetector in metal-semiconductor-metal (MSM) structure achieved outstanding photo-response properties of a low dark current of 10−13–10−12 A at 50 V, a high light-dark current switching ratio over 105), a high responsivity of 22.6 A/W, and a decent specific detectivity of 4.2 × 1014 Jones. Moreover, the detector has a fast response time of 13 ns. Additional optoelectronic studies demonstrate the strong homogeneity and repeatability of the photodetectors array, enabling it to serve as a reliable solar-blind imaging photodetector with high spatial resolution.

Sodium adsorption on nanometer-thick TiO2 channel thin-film transistors for enhanced drain currents

Sodium adsorption on nanometer-thick-TiO2-channel thin-film transistors (TFTs) are examined for enhancing the drain current. In the TFTs, the channel thickness of TiO2 is set as thin as ∼16 nm. The TiO2 film is deposited by atomic layer deposition using plasma excited humified Ar, followed by crystallization into the anatase phase by thermal annealing at 500 °C in air. The gate oxide is a 300 nm thick SiO2 film, which is grown on a highly doped n+ Si substrate. The n+ Si substrate is used as the gate electrode. The drain and source electrodes of Ti are deposited by an electron beam evaporation at room temperature. The TiO2 channel is covered with multiple layers of aluminum silicate and SiO2 films to enhance the Na sorptivity. The multiple films consist of combinations of 1 nm thick SiO2 and 0.16 nm thick aluminum silicate. The channel length and width are 60 and 1000 μm, respectively. The TFT without the Na adsorption exhibits a field effect mobility of ∼0.5 cm2/V s, where the drain current is recorded around 30 μA with a gate voltage of 10 V. With immersion of the TFT in a 10 mM NaCl solution, the drain current is enhanced to the order of mA. The simulation with an equivalent circuit with source and drain resistances suggests that the field effect mobility is enhanced to ∼30 cm2/V s with the adsorption of Na. In this paper, we discuss the operation mechanism of the Na adsorbed TiO2 TFT and its applicability as TFT-based high current switch devices and sensors.

Providing Low Current Ripple and MPPT Requirements in PV Panels with IBC Operating in Critical Current Mode

As energy demand increases, the investment cost of photovoltaic (PV) systems decreases due to mass production. That results the usage of PV panels to become widespread. Changes in environmental conditions result in a change in the power produced by PV panels. Maximum power point tracking (MPPT) is proposed to handle this problem. In addition to changing environmental conditions, the current ripple of the PV panel is another significant problem for the power produced. High current ripples affect the dynamic response of the PV panels and make it difficult to maintain the system to operate at maximum power point. Using an interleaved boost converter (IBC) and driving the converters in critical conduction mode (CRM) is a well-known solution for reducing high current ripple and switching losses in power supplies. In this study, an IBC operating in CRM with MPPT and ensuring low current ripple from the panels is proposed. To verify the theoretical approach, experimental and simulation studies were conducted. A 30 W prototype is designed and tested under various conditions. The MPPT efficiency of the prototype circuit is measured as 98.1%. It has been seen that the real-time and simulation results are in accordance with the theoretical ones.

Enhancement-Mode Ambipolar Thin-Film Transistors and CMOS Logic Circuits using Bilayer Ga2O3/NiO Semiconductors.

Recent advancements in power electronics have been driven by Ga2O3-based ultrawide bandgap (UWBG) semiconductor devices, enabling efficient high-current switching. However, integrating Ga2O3 power devices with essential silicon CMOS logic circuits for advanced control poses fabrication challenges. Researchers have introduced Ga2O3-based NMOS and pseudo-CMOS circuits for integration, but these circuits may either consume more power or increase the design complexity. Hence, this article proposes Ga2O3-based CMOS realized using heterogeneous 3D-stacked bilayer ambipolar transistors. These ambipolar transistors consist of HfO2/NiO/Ga2O3/NiO/HfO2 heterostructures that are wrapped around by the Ti/Au gate electrode, resulting in record high electron and hole current on/off ratios of 109 and 107. The threshold voltage, subthreshold swing, and current density measured from 100 ambipolar devices (across 5 batches) are around -7.99 ± 0.92 V (p-channel) and 7.81 ± 0.81 V (n-channel), 0.59 ± 0.07 V/dec (p-channel) and 0.61 ± 0.06 V/dec (n-channel), and 0.99 ± 0.26 mA/mm (p-channel) and 58.23 ± 12.99 mA/mm (n-channel), respectively. All the 100 ambipolar devices showed decent long-term stability over a period of 200 days, exhibiting reliable electrical performance. The threshold voltage shift (ΔVTH) after negative bias stressing for a period of 3500 s is around 11.52 V (p-channel) and 10.21 V (n-channel), respectively. Notably, the n-channels exhibit ∼2 orders higher on/off ratio than the best Ga2O3 unipolar transistors at 300 °C. Moreover, the polarities of ambipolar transistors are reconfigurable into p- or n-MOS, which are integrated to demonstrate CMOS inverter, NOR, and NAND logic gates. The switching periods from "0" to "1" and from "1" to "0" of NOR are 0.12 and 0.17 μs, and those of NAND are 0.16 and 0.13 μs. This work lays the foundation of oxide-semiconductor-based CMOS for future integrated electronics.

Flexible switch matrix addressable electrode arrays with organic electrochemical transistor and pn diode technology

Due to their effective ionic-to-electronic signal conversion and mechanical flexibility, organic neural implants hold considerable promise for biocompatible neural interfaces. Current approaches are, however, primarily limited to passive electrodes due to a lack of circuit components to realize complex active circuits at the front-end. Here, we introduce a p-n organic electrochemical diode using complementary p- and n-type conducting polymer films embedded in a 15-μm -diameter vertical stack. Leveraging the efficient motion of encapsulated cations inside this polymer stack and the opposite doping mechanisms of the constituent polymers, we demonstrate high current rectification ratios (105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${10}^{5}$$\\end{document}) and fast switching speeds (230 μs). We integrate p-n organic electrochemical diodes with organic electrochemical transistors in the front-end pixel of a recording array. This configuration facilitates the access of organic electrochemical transistor output currents within a large network operating in the same electrolyte, while minimizing crosstalk from neighboring elements due to minimized reverse-biased leakage. Furthermore, we use these devices to fabricate time-division-multiplexed amplifier arrays. Lastly, we show that, when fabricated in a shank format, this technology enables the multiplexing of amplified local field potentials directly in the active recording pixel (26-μm diameter) in a minimally invasive form factor with shank cross-sectional dimensions of only 50×8 μm2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$${\\mu m}^{2}$$\\end{document}.

Electrical and thermal characteristics of LaB6 thermionic hollow cathodes operating in He, D2, Ar, and Xe at 4–200 Pa and 0.25–5 A cm−2

We report characteristics of lanthanum hexaboride (LaB6) cathodes for conditions relevant to a high-voltage, high-current switching device. LaB6 is selected because of its relatively low work function, stability in the presence of many common gas impurities, and a low evaporation rate (long life) at operating temperatures. We have investigated the effect of cathode geometry, gas type, pressure, and current on a LaB6 hollow cathode in a diode configuration with an opposing planar anode. The gas is stagnant at a relatively low pressure of 4–200 Pa (0.03–1.5 Torr) because of device high-voltage standoff requirements. In all cases, the plasma voltage decreases to a plateau value with increasing current where a practical device would operate. The plateau voltage aligns with the fill gas excitation or ionization voltage, depending on conditions. At high current, the cathode temperature exceeds that required for thermionic emission to supply the total current, a behavior that is understood by accounting for back-diffusing bulk electrons.

Nanographene‐Based Metal‐Organic Framework Thin Films: Optimized Packing and Efficient Electron‐Hole Separation Yielding Efficient Photodetector

AbstractOrganic semiconductors, specifically polycyclic aromatic chromophores like pentacene, coronene, and nanographenes (hexa‐peri‐hexabenzocoronene, HBC), are often utilized in optoelectronic applications due to their intriguing single‐molecule properties. However, the integration of these aromatic compounds into optoelectronic devices frequently encounters significant obstacles, primarily due to the unpredictable and challenging control over the structure and morphology of their condensed phase. Rather than resorting to chemical modifications or advanced thin‐film manufacturing methods such as chemical vapor deposition, the so‐called metal‐organic framework (MOF) approach is employed to create a highly photoresponsive, nanographene‐based thin film employing a layer‐by‐layer, liquid‐phase epitaxy method. It is demonstrated that the novel Cu‐HBC MOF thin film exhibits excellent photoresponsive behavior under ultraviolet illumination, including a fast response time (˂ 0.02 s) and high current switching ratio (≈104), which significantly outperforms an isostructural MOF Zn‐HBC. Furthermore, it is demonstrated that the metal nodes inside the MOF can be used to enhance the photoresponse by efficient exciton splitting.

HVHC-ESD-Induced Oxygen Vacancies: An Insight into the Phenomena of Interfacial Interactions of Nanostructure Oxygen Vacancy Sites with Oxygen Ion-Containing Organic Compounds.

The challenging environmental chemical and microbial pollution has always caused issues for human life. This article investigates the detailed mechanism of photodegradation and antimicrobial activity of oxide semiconductors and realizes the interface phenomena of nanostructures with toxins and bacteria. We demonstrate how oxygen vacancies in nanostructures affect photodegradation and antimicrobial behavior. Additionally, a novel method with a simple, tunable, and cost-effective synthesis of nanostructures for such applications is introduced to resolve environmental issues. The high-voltage, high-current electrical switching discharge (HVHC-ESD) system is a novel method that allows on-the-spot sub-second synthesis of nanostructures on top and in the water for wastewater decontamination. Experiments are done on rhodamine B as a common dye in wastewater to understand its photocatalytic degradation mechanism. Moreover, the antimicrobial mechanism of oxide semiconductors synthesized by the HVHC-ESD method with oxygen vacancies is realized on methicillin- and vancomycin-resistant Staphylococcus aureus strains. The results yield new insights into how oxygen ions in dyes and bacterial walls interact with the surface of ZnO with high oxygen vacancy, which results in breaking of the chemical structure of dyes and bacterial walls. This interaction leads to degradation of organic dyes and bacterial inactivation.

Magnetization Switching in Atom-Thick Mo Engineered Exchange Bias-Based SOT-MRAM

The manipulation and detection of antiferromagnetic (AFM) in exchange bias (EB)-based MRAM using spin-orbit torque (SOT) holds promise for developing highly reliable and ultrafast spintronic memory devices. However, the high switching current induced by the SOT-induced EB field remains a major drawback. Additionally, the mechanism behind the interaction between the EB field and the SOT remains unclear. To address this issue, we have introduced a thin layer of Mo between the AFM and ferromagnetic-free layers to tune the EB field and study the SOT-induced switching properties. Our findings indicate that when the SOT is dominant during short pulses of a few nanoseconds, Mo insertion can significantly reduce the EB field and decrease the SOT switching current, leading to a reduction in power consumption of these memories. This approach could open up new possibilities for optimizing EB-MRAM and improving our understanding of AFM electronics.

Power Circuit Design and Analysis of Controller For High-Power Axial Flux PMSM

Designing a high-power controller having high efficiency for permanent magnet motors is a challenge for developers in recent times and very few techniques are available. Design and analysis of power electronic drive for a high-power axial flux permanent magnet synchronous motor is presented in this paper. The motor under consideration here is having two outer stators and single permanent magnet rotor to drive the shaft. Control schemes and methodologies are the major concentration for research. Present paper explains a method to estimate the operational drive parameters and loss calculation according the selected power switches. In addition to this, thermal modelling is also important for designing a controller for high power machines. The hardware selection for high current switching operations is very critical for reliable and robust operation. Parts like IGBT module, gate driver, DC link capacitor, snubbers, current sensor sensitivities and estimation of losses are also critical along with control logic and processor. The importance of thermal analysis for high current switching drives is discussed and methodology for thermal analysis of power electronic devices is explained. The current work focuses on hardware level design of high-power drive for 150kW axial flux PMS motor.

State-of-the-Art Grid Stability Improvement Techniques for Electric Vehicle Fast-Charging Stations for Future Outlooks

The growing trend for electric vehicles (EVs) and fast-charging stations (FCSs) will cause the overloading of grids due to the high current injection from FCSs’ converters. The insensitive nature of the state of charge (SOC) of EV batteries during FCS operation often results in grid instability problems, such as voltage and frequency deviation at the point of common coupling (PCC). Therefore, many researchers have focused on two-stage converter control (TSCC) and single-stage converter (SSC) control for FCS stability enhancement, and suggested that SSC architectures are superior in performance, unlike the TSCC methods. However, only a few research works have focused on SSC techniques, despite the techniques’ ability to provide inertia and damping support through the virtual synchronous machine (VSM) strategy due to power decoupling and dynamic response problems. TSCC methods deploy current or voltage control for controlling EVs’ SOC battery charging through proportional-integral (PI), proportional-resonant (PR), deadbeat or proportional-integral-derivative (PID) controllers, but these are relegated by high current harmonics, frequency fluctuation and switching losses due to transient switching. This paper reviewed the linkage between the latest research contributions, issues associated with TSCC and SSC techniques, and the performance evaluation of the techniques, and subsequently identified the research gaps and proposed SSC control with SOC consideration for further research studies.

Deterministic Magnetic Switching in Perpendicular Magnetic Trilayers Through Sunlight-Induced Photoelectron Injection.

Finding an energy-efficient way of switching magnetization is crucial in spintronic devices, such as memories. Usually, spins are manipulated by spin-polarized currents or voltages in various ferromagnetic heterostructures; however, their energy consumption is relatively large. Here, a sunlight control of perpendicular magnetic anisotropy (PMA) in Pt (0.8nm)/Co (0.65nm)/Pt (2.5nm)/PN Si heterojunction in an energy-efficient manner is proposed. The coercive field (HC ) is altered from 261 to 95Oe (64% variation) under sunlight illumination, enabling a nearly 180° deterministic magnetization switching reversibly with a 140Oe magnetic bias assistant. The element-resolved X-ray circular dichroism measurement reveals different L3 and L2 edge signals of the Co layer with or without sunlight, suggesting a photoelectron-induced redistribution of the orbital and spin moment in Co magnetization. The first-principle calculations also reveal that the photo-induced electrons shift the Fermi level of electrons and enhance the in-plane Rashba field around the Co/Pt interfaces, leading to a weakened PMA and corresponding HC decreasing and magnetization switching accordingly. The sunlight control of PMA may provide an alternative way for magnetic recording, which is energy efficient and would reduce the Joule heat from the high switching current.

Final design of the DTT Toroidal power supply circuit

The Divertor Tokamak Test (DTT) facility is in advanced design and construction phase at the ENEA laboratories in Frascati, Italy, to contribute to the study, the design and assessment of systems for the treatment of heat exhaust. The DTT Toroidal Field (TF) magnet system consists of 18 superconducting coils, fed in series by a single power supply (TFPS), which is a 24-pulses thyristor-based converter with an output DC current up to of 44 kA. In case of a quench in the superconductors, the magnetic energy stored in the coils is extracted by 3 Fast Discharge Units (FDUs) in series with 3 sectors of 6 TF coils. After the respective contracts were awarded, the TFPS and the FDUs are currently in the final design phase which is addressed in this paper. In particular, the analysis is focused on the most innovative aspects of the design, as the use of silicon carbide (SiC) varistors instead of discharge resistors and of a fully electronic and completely redundant high-current switch without any mechanical device.

The physical mechanism underpinning superfast switching of GaAs S-diode

Recently a physical phenomenon termed “collapsing field domains” (CFDs) was discovered, which manifests itself in several avalanching gallium arsenide (GaAs) structures. The phenomenon consists of the formation of a comb of ultra-high-amplitude field domains, which generate a dense electron-hole (e-h) plasma. Each domain surrounded by the plasma shrinks down to a nanometre scale in width, followed by collapse. Those domains cause different peculiar transient features from superfast (picosecond range) high-current avalanche switching in the voltage-blocking layers to sub-THz pulsed electromagnetic emission, filaments with extreme (∼10 MA/cm2) current density, hot-photon radiation, etc. The physics of those moving domains differs drastically from the Gunn effect having in common only a requirement of negative differential mobility (NDM) of the electrons and the fact that both phenomena have so far been observed in n-type GaAs layers. Here we demonstrate the CFD phenomenon in a p-layer formed by a deep acceptor. This finding contributes to the interpretation of superfast switching in so-called S-diodes. Besides proving the CFD nature underpinning superfast switching, we show the unique parameters of a simple, S-diode-based optical transmitter that achieves high-power (∼160 W) sub-nanosecond output. This performance is relevant to automotive and flight guidance applications of lidar. A brief review of alternative solutions presenting previous state-of-the-art for miniature lidar transmitters is given for comparison.

Комбинированный твердотельный замыкающий ключ для коммутации сильноточного импульса

The results of studies of a solid-state closing switch for a high-current pulse switching are presented. The experiments were carried out on a laboratory facility with a capacitive energy storage run down a discharge circuit with electrical-explosive opening switch (EEOS) by a current pulse with an amplitude ~450 kA. The discharge circuit consists of two sections separated by a branch with a solid-state closing switch. A metal foil of the EEOS can be located in an interelectrode gap of the closing switch. The operation of the EEOS leads to a breakdown of the insulation of the closing switch, as a result of which an effective shunting of the section of the discharge circuit containing the EEOS occurs. The developed combined solid-state closing switch in the future is capable of providing multi-channel switching of a high-current pulse to the load synchronously with the EEOS operation.