High Current Low Energy Research Articles

Surface roughness behaviour of ion irradiated industrial steel

We have studied the sputtering yield and surface roughness changes of Starvax steels (Cr:13.6, C: 0.38%, Si:0.8%, Mn: 0.5%, V: 0.3%, Mold and Die Steel) used for the manufacture of optical back-light polymer. For this study, we have built a dedicated high current low energy ion source(15 keV, 5 mA). After irradiation of various ion species onto the specimen at various beam incidence with respect to the specimen species, sputtering rates and roughness characteristics of the irradiated surface were analyzed by Atomic Force Microscope (AFM) and a large area optical profiler system. After irradiation with a low energy ion beam (15 keV), the sputtering yield increased and the surface roughness decreased with increasing ion mass and incident angle below a critical incident angle.

Electromagnetic scanning systems

Rated beam currents of ion implantation systems have increased by three orders of magnitude over the last decade. Scanning systems employing time varying electric fields which are entirely adequate for low and intermediate current applications present significant problems when they are applied to high current low energy beams of heavy dopants. The successful handling of these high perveance beams depends upon electron space charge neutralization to preserve the optical quality of the beam. A new hybrid mechanical-magnetic scanning system with parallel scan correction as applied to a high current implanter is analyzed and the principles governing the design of this hybrid system are outlined. Data on the operation of this system is presented to illustrate typical performance at energies up to 80 keV and currents as high as 10 mA for ion beams scanned over a 30 cm lateral dimension at frequencies of the order of 0.1 Hz. Dopant uniformity data shows that under favorable conditions hybrid magnetic scanning can achieve uniformities as good as 2σ < 1%.

Development of a prototype high-current low-energy ion implanter

Abstract A high current-low energy implant system for the processing of semiconductor devices at medium-high dopant levels is described. Criteria for selection and design of ion beam components such as ion beam optics, vacuum requirements and reliability are discussed. Variations in wafer uniformities for within wafer, wafer-to-wafer and run-to-run are presented.

大電流&amp;bull;低エネルギーイオンビームの生成

大電流&amp;bull;低エネルギーイオンビームの生成