High-brightness Photocathode Research Articles

Improving Cathode Testing with a High-Gradient Cryogenic Normal Conducting RF Photogun

Future electron accelerator applications such as X-ray free electron lasers and colliders are dependent on significantly increasing beam brightness. With the observation that linac beam manipulation’s best preservation of max brightness is at the cathode, we are incentivized to create an environment where we can study how to achieve the highest possible photogun brightness. In order to do so, we intend to extract beams from high-brightness photocathodes with the highest achievable accelerating gradients we can manage in a klystron-powered radiofrequency (RF) photogun. We utilize here cryogenic normal conducting cavities to achieve ultra-high gradients via limitation of breakdown rates (BDR). The low temperatures should also reduce cathode emittance by reducing the mean transverse energy (MTE) of electrons near the photoemission threshold. To this end, we have designed and produced a new CrYogenic Brightness-Optimized Radiofrequency Gun (CYBORG) for use in a new beamline at UCLA. We will introduce the enabling RF and photoemission physics as a primer for the new regime of high field low temperature cathodes we intend to enter. We further report the current status of the beamline commissioning, including the cooling of the photogun to 100 K, and producing 0.5 MW of RF feed power, which corresponds to cathode accelerating fields in the range of 80–90 MV/m. We further plan iterative improvements to both to 77 K and 1 MW corresponding to our ultimate goal >120 MV/m. Our discussion will include future beamline tests and the consideration of the initial realization of an ultra-high-gradient photoinjector concept.

Novel Ultrabright and Air‐Stable Photocathodes Discovered from Machine Learning and Density Functional Theory Driven Screening (Adv. Mater. 44/2021)

Photocathode Materials The discovery of high-brightness photocathode materials can considerably expand the capabilities of X-ray free-electron laser facilities. In article number 2104081, Evan R. Antoniuk, Evan J. Reed, and co-workers perform a comprehensive screening of over 74 000 materials to identify novel photocathode candidates. The newly discovered materials are demonstrated to achieve higher brightness and superior air stability than the current state-of-the-art.

Novel Ultrabright and Air-Stable Photocathodes Discovered from Machine Learning and Density Functional Theory Driven Screening.

The high brightness, low emittance electron beams achieved in modern X-ray free-electron lasers (XFELs) have enabled powerful X-ray imaging tools, allowing molecular systems to be imaged at picosecond time scales and sub-nanometer length scales. One of the most promising directions for increasing the brightness of XFELs is through the development of novel photocathode materials. Whereas past efforts aimed at discovering photocathode materials have typically employed trial-and-error-based iterative approaches, this work represents the first data-driven screening for high brightness photocathode materials. Through screening over 74 000 semiconducting materials, a vast photocathode dataset is generated, resulting in statistically meaningful insights into the nature of high brightness photocathode materials. This screening results in a diverse list of photocathode materials that exhibit intrinsic emittances that are up to 4x lower than currently used photocathodes. In a second effort, multiobjective screening is employed to identify the family of M2 O (M = Na, K, Rb) that exhibits photoemission properties that are comparable to the current state-of-the-art photocathode materials, but with superior air stability. This family represents perhaps the first intrinsically bright, visible light photocathode materials that are resistant to reactions with oxygen, allowing for their transport and storage in dry air environments.

Fabrication and structural characterization of diamond-coated tungsten tips

Coating metal nanotips with a negative electron affinity material like hydrogen-terminated diamond bears promise for a high brightness photocathode. We report a recipe on the fabrication of diamond-coated tungsten tips. A tungsten wire is etched electrochemically to a nanometer sharp tip, dip-seeded in diamond suspension and subsequently overgrown with a diamond film by plasma-enhanced chemical vapor deposition. With dip-seeding only, the seeding density declines towards the tip apex due to seed migration during solvent evaporation. The migration of seeds can be counteracted by nitrogen gas flow towards the apex, which makes coating of the apex with nanometer-thin diamond possible. At moderate gas flow, diamond grows homogeneously at shaft and apex whereas at high flow diamond grows in the apex region only. With this technique, we achieve a thickness of a few tens of nanometers of diamond coating within less than 1 μm away from the apex. Conventional transmission electron microscopy (TEM), electron diffraction and electron energy loss spectroscopy confirm that the coating is composed of dense nanocrystalline diamond with a typical grain size of 20 nm. High resolution TEM reveals graphitic paths between the diamond grains.

Silver nanorod arrays for photocathode applications

We explore the use of plasmonic Ag nanorod arrays featuring enhanced photoemission as high-brightness photocathode material. Silver nanorod arrays are synthesized by the direct current electrodeposition method and their dimensionality, uniformity, crystallinity, and oxide/impurity content are characterized. The yielded arrays exhibit greatly enhanced two-photon photoemission under 400 nm femtosecond pulsed laser excitation. Plasmonic field enhancement in the array produces photoemission hot spots that are mapped using photoemission electron microscopy. The relative photoemission enhancement of nanorod hot spots relative to that of a flat Ag thin film is found to range between 102 and 3 × 103.

High Brightness Photocathodes for Ultrafast TEM: A New Paradigm

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

Advanced Laser Technologies for High-brightness Photocathode Electron Gun

A laser-excited photocathode RF gun is one of the most reliable high-brightness electron beam sources for XFELs. Several 3D laser shaping methods have been developed as ideal photocathode illumination sources at SPring-8 since 2001. To suppress the emittance growth caused by nonlinear space-charge forces, the 3D cylindrical UV-pulse was optimized spatially as a flattop and temporally as squarely stacked chirped pulses. This shaping system is a serial combination of a deformable mirror that adaptively shapes the spatial profile with a genetic algorithm and a UV-pulse stacker that consists of four birefringent α-BBO crystal rods for temporal shaping. Using this 3D-shaped pulse, a normalized emittance of 1.4 π mm mrad was obtained in 2006. Utilizing laser's Z-polarization, Schottky-effect-gated photocathode gun was proposed in 2006. The cathode work functions are reduced by a laser-induced Schottky effect. As a result of focusing a radially polarized laser pulse with a hollow lens in vacuum, the Z-field (Z-polarization) is generated at the cathode.

High-Brightness Photocathodes through Ultrathin Surface Layers on Metals

We report how ultrathin MgO films on Ag(001) surfaces can be used to control the emittance properties of photocathodes. In addition to substantially reducing the work function of the metal surface, the MgO layers also favorably influence the shape of the surface bands resulting in the generation of high-brightness electron beams. As the number of MgO surface layers varies from 0 to 3, the emitted electron beam becomes gradually brighter, reducing its transverse emittance to 0.06 mm mrad. We suggest the use of such photocathodes for the development of free-electron x-ray lasers and energy-recovery linac x-ray sources.

Prospect for high brightness III–nitride electron emitter

We describe p-type gallium nitride (GaN) as a candidate for high brightness photocathodes. Experiments utilizing photoemission spectroscopy and quantum yield measurements were performed on GaN films to characterize various cesium and oxygen activations. Quantum efficiencies of 0.1%–4% were obtained in reflection for the cesiated p-type 0.5 μm thick GaN films and 25%–50% on the 0.1 μm thick GaN films. The corresponding emission currents are 142–300 nA for 0.5 μm thick films and 0.7–1.3 μA for the 0.1 μm thick films. This results in an increase of several orders of magnitude in the emission current from the starting GaN films. Furthermore, an initial desorption measurement was performed in order to evaluate the Cs binding strength to GaN relative to GaAs. We observe Cs was bound to the GaN surface (0001_) at 700 °C and completely desorbed at 450 °C for a (100) GaAs surface. Finally, an alternate barium activation on GaN is included for preliminary comparison with the various cesium activations.

Silicon photocathodes with array of tips in a photo-injector

Photo-injectors for linear accelerators and free electron laser need a high brightness photocathode with a dark current lower than 10 mA. Silicon with array of tips shows a photofield emission current with a continuous argon laser with a quantum yield of 1%. The ratio η between photofield and field emission (dark) current is 20 near the threshold of field emission. With a pulsed Nd-YAG laser ( λ = 1.02 μm pulses of 35 ps duration) we observe a pure photoemission charge (70 pC) with harmonic 4 (ℏ ω 4 = 4.68 eV) and a photofield charge above the threshold which is 700 pC with harmonic 2 (ℏ ω 2 = 2.34 eV). We calculate for the photo-injector CANDELA the dark current following the method of Loew and Wang, starting from the experimental Fowler-Nordheim curve and we find a dark current which is 1 μA at 3 GHz at E max = 30 MV/m.