A simple negative temperature coefficient (NTC) thermistor Ba0.85Sr0.15Ti0.85Zr0.15O3 system is elaborated using a conventional solid-state reaction route. The structural analysis confirms that the elaborated pseudo-cubic system, which is indexed in the P4mm space group, exhibits one single phase. The dielectric properties and the electrical resistivity data are investigated over a large temperature range from 413 K to 673 K. In this temperature interval, the Steinhart–Hart equations are employed to confirm that Ba0.85Sr0.15Ti0.85Zr0.15O3 is a promising system for sensor application. Accordingly, the thermistor constant (β=10154 K), the sensitivity factor (-5.5 %/K≤α≤-2 %/K), the activation energy (Ea=0.875 eV), and the stability factor (SF=2.27) parameters are calculated to approve that Ba0.85Sr0.15Ti0.85Zr0.15O3 exhibits an NTC-thermistor behavior. The temperature dependence of the electrical resistivity confirms that Ba0.85Sr0.15Ti0.85Zr0.15O3 reveals a semiconductor behavior. The dielectric investigation shows that Ba0.85Sr0.15Ti0.85Zr0.15O3 exhibits a motivating dielectric properties (elevated dielectric constant value (105<ε’<106) and low dielectric losses (mostly < 0.007) with almost frequency independence between 20 Hz to 500 kHz). The colossal dielectric response of Ba0.85Sr0.15Ti0.85Zr0.15O3 is attributed to the internal barrier layer capacitor (IBLC) and the surface barrier layer capacitor (SBLC) effects. Such response suggests the suitability of Ba0.85Sr0.15Ti0.85Zr0.15O3 ceramic for high temperature capacitor applications.