Hall Effect Measurements Research Articles

Coevolution of superconductivity and Hall coefficient with anisotropic lattice shrinkage in compressed KCa2Fe4As4F2

Abstract It is well known that the stability of superconductivity in superconductors is widely recognized to be determined by various factors, including charge, spin, orbit, lattice, and other related degrees of freedom. Here, we report our findings on the pressure-induced coevolution of superconductivity and Hall coefficient in KCa2Fe4As4F2, an iron-based superconductor possessing a hybrid crystal structure combining KFe2As2 and CaFeAsF. Our investigation, involving high-pressure resistance, Hall effect and X-ray diffraction (XRD) measurements, allows us to observe the connection of the superconductivity and Hall coefficient with the anisotropic lattice shrinkage. We find that its ambient-pressure tetragonal (T) phase presents a collapse staring at around 18 GPa, where the sign of the Hall coefficient (R H ) changes from positive to negative. Upon further compression, both superconducting transition temperature (Tc) and R H exhibit a monotonous decrease. At around 41 GPa, the superconductivity is completely suppressed (T c =0), where the parameter a begins to decline again and the Hall coefficient remain nearly unchanged. Our experiment results clearly demonstrate that the pressure-induced anisotropic lattice collapse plays a curial role in tuning the interplay among multiple degrees of freedom in the superconducting system and, correspondingly, the stability of the superconductivity.

Single Crystal Growth and Transport Properties of Narrow Band Gap Semiconductor RhP2

Abstract Here, we report the growth of high-quality single crystals of RhP2, and systematically study its structure and physical properties by transport, magnetism, and heat capacity measurements. Single-crystal X-ray diffraction revealed RhP2 adopts a monoclinic structure with the cell parameters a=5.7347(10) Å, b=5.7804(11) Å, and c=5.8222(11) Å, space group P21/c (No. 14). The electrical resistivity ρ(T) measurements indicate that RhP2 exhibits a narrow band gap behavior with the activation energies of 223.1 m eV and 27.4 m eV for two distinct regions, respectively. The temperature-dependent Hall effect measurements show electron domain transport behavior with a low charge carrier concentration. We found that RhP2 has a high mobility μe~210 cm2v-1s-1 with carrier concentrations ne~3.3×1018 cm-3 at 300 K with a narrow band gap feature. The high mobility μe reached a maximum of approximately 340 cm2v-1s-1 with carrier concentrations ne~2×1018 cm-3 at 100 K. No magnetic phase transitions were observed from the susceptibility χ(T) and specific heat Cp(T) measurements of RhP2. Our results not only offer effective potential as a material platform for studying exotic physical properties and electron band structures but also motivate further exploration of their potential photovoltaic and optoelectronic applications.

Magnetic compensation in sputtered ferrimagnetic Mn4−xGaxN thin films

Abstract Fully compensated ferrimagnets are attracting increasing attention for spintronics. Here we report a series of Mn4−xGaxN ferrimagnetic thin films grown on (100)-oriented MgO by magnetron sputtering. A small tetragonal distortion with c/a = 0.99 leads to perpendicular magnetic anisotropy with a [001] easy axis. The magnetisation decreases with increasing Ga content up to x = 0.18, where the magnetic moment is close to zero at room temperature. It increases with further increase of x, indicating the magnetic compensation composition has been crossed and the dominant sublattice has switched from Mn on the corner sites, where it is progressively replaced by nonmagnetic Ga, to noncollinear Mn on the face-centered sites. Compensation found at 235K in a remanent scan of the x = 0.18 film is confirmed by measurements of the anomalous Hall effect and interpolation of the inverse coercivity. This work establishes the conditions for thin film growth of Mn4−xGaxN that could be used for room-temperature ferrimagnetic spintronics. The behaviour of thin films is compared with that of bulk material.

High-performance of low temperature solution-processed P-channel CuGaO thin film transistors

The exploration of p-type metal-oxide semiconductors (MOS) has garnered growing interest, particularly for their potential applications in next-generation optoelectronic devices, display backplanes, and low-power consumption complementary MOS (CMOS) circuits. Here, we introduced low-temperature solution-processed copper gallium oxide (CuGaO) films for p-channel thin-film transistors (TFTs). Hall Effect measurements confirmed the p-type conduction of CuGaO, revealing a conductivity and mobility of 3.76 ×10−2 S/cm and 7.89 cm2V–1s–1, respectively. The p-channel CuGaO-250 TFT demonstrated a field-effect mobility (μFE) of 1.24 cm2V–1s–1, the lowest subthreshold swing (SS) of 519 mV/dec, and an ON/OFF current ratio (ION/IOFF) of ∼104 at a low operating voltage. The notable improvement in TFT performance can be attributed to the quality of the CuGaO-250 film, a smooth surface morphology, and a reduction of interfacial traps between the semiconductor and the gate insulator. Hence, low-temperature fabrication of the p-channel CuGaO TFT holds promise for implementing metal oxide-based TFT and complementary metal oxide semiconductor (CMOS) circuits in next-generation displays.

Performance evaluation of polycrystalline Si1-xGex thin-film transistorsfabricated by continuous-wave laser lateral crystallization on glass substrates

Abstract This study was aimed at elucidating the performance of continuous-wave laser lateral-crystallized (CLC) polycrystalline Si1-xGex (poly-Si1-xGex) thin-film transistors (TFTs). The transfer characteristics of the n-ch CLC poly-Si1-xGex TFTs (x = 0, 0.05, 0.1, and 0.3) exhibited a positive shift in the threshold voltage (Vth) with increasing Ge content. Furthermore, the off-current in the p-ch CLC poly-Si0.9Ge0.1 TFTs decreased with decreasing film thickness. These properties of the CLC poly-Si1-xGex TFTs can be attributed to the generation of acceptors and increment of gate SiO2/poly-Si1-xGex interface charge state with increasing Ge content. Generation of acceptors was also supported by Hall effect measurements. In addition, the thermal stability of acceptors up to 700 ℃ was elucidated through Hall effect measurements and TFT performance evaluations. Furthermore, we examined the origins of these acceptors. This experiment highlighted the sensitivity of Si1-xGex to Ge incorporation, even in small amounts.

Carrier mobility dependence of indium antimonide-bismide on carrier concentration, temperature, and bismuth composition grown on semi-insulating gallium arsenide substrate

We explore the impact of carrier concentration, temperature, and bismuth (Bi) composition on the carrier mobility of indium antimonide-bismide (InSb1−x Bi x ) material. Utilizing the molecular beam epitaxy method, we achieved high Bi composition uniformity. This method also enables the InSb1−x Bi x to be grown on semi-insulating GaAs substrate, effectively preventing parallel electrical conduction during Hall effect measurement. Our findings reveal that InSb1−x Bi x doped with silicon (Si) and tellurium (Te) consistently exhibit n-type conductivity. In contrast, InSb1−x Bi x doped with beryllium (Be) exhibit a transition from n to p type conductivity, subjected to the Be doping level and the measurement temperature. Based on these observations, we proposed an empirical model describing the dependence of InSb1−x Bi x electron mobility on carrier concentration, temperature, and Bi composition, specifically for Si and Te-doped InSb1−x Bi x samples. These insights gained from this study hold potential application in photodetector device simulations.

Facile synthesis and optimization of graphene oxide reduction by annealing in hydrazine vapour in ambient air for potential application in perovskite solar cells

Graphene oxide (GO) was synthesized from graphite via a modified Hummer's method, followed by thermal and chemical reductions to produce reduced graphene oxide (RGO) samples at various temperatures. A suite of characterization techniques including Fourier Transform Infrared Spectroscopy (FTIR), Scanning Electron Microscopy (SEM), Energy-Dispersive X-ray Spectroscopy (EDS), UV-Visible Spectroscopy, thermogravimetric analysis (TGA), X-ray diffraction (XRD), and Hall effect measurements were employed to assess the structural, morphological, optical, and electrical properties of the samples. FTIR analysis confirmed the successful functionalization of graphite to GO and subsequent reduction to reduced graphene oxide, with peak intensities decreasing as the reduction temperature increased. UV-visible spectroscopy of GO showed a maximum absorption at 235 nm which confirmed the synthesis of GO while the reduction revealed a notable red shift in absorption peaks with increasing annealing temperature, and that signified a reduction in bandgap. XRD analyses demonstrated the removal of oxygen functional groups. The X-ray diffraction (XRD) analysis of GO showed diffraction at 2θ = 10.74° which revealed a fully oxidized graphene oxide with oxygen-containing functional groups, and hence an increase in interlayer spacing (d002) from 3.341 Å (graphite) to 8.228 Å (GO). Upon reduction, there is a gradual decrease in d002 from 8.228 Å (GO) to 3.387 Å (HRGO300), suggesting the gradual removal of intercalated oxygen molecules, and hence the gradual restoration of sp2 hybridisation in graphene. The EDS analysis revealed an increase in the carbon-to-oxygen (C/O) ratio from 1.78 in GO to 2.75 in HRGO300 as the annealing temperature for the reduction process increased which further confirmed the removal of oxygen functional groups. The Hall effect data showed hole mobility of 4.634 x101 (GO), 4.831 x101 (HRGO200), and 5.462 x100 (HRGO300) with conductivities of 8.985 x10-5 (GO), 1.087 x100 (HRGO200) and 1.791 x101 1/Ω cm, suggesting an increase in conductivity as the annealing temperature increased as revealed in the EDS. Out of the three samples identified as hole transport materials, the sample HRGO300 with the highest C/O ratio of 2.75 has the highest conductivity, and hence most suitable for application as hole transport material in perovskite solar cell.

Exploring the transformation: High-dosage gamma irradiation's role in tuning structural, optical, and electrical properties of cadmium-doped lead sulfide (PbS) nanoparticles

The effects of gamma irradiation on Cadmium-doped PbS (Cd-PbS) nanoparticles are thoroughly examined in this lattice study. The study sheds light on the changes in structural, morphological, and electrical properties brought about by Cd doping and gamma irradiation by employing a variety of methods such as X-ray diffraction, FESEM imaging, EDAX analysis, Raman spectroscopy, photoluminescence (PL) spectra, and Hall effect measurements. The Cd-doped PbS shows a fluctuating crystallite size as the average size first increases by ∼3 nm and then decreases by ∼3 nm with Cd concentration. This is due to the induced strain by the Cd dopant, which has a smaller ionic radius compared to Pb ions. With Cd substitution, the bandgap of PbS first decreases from 2.29 eV to 2.19 eV and then increases with mild fluctuations. Meanwhile, gamma irradiation causes these changes, decreasing the bandgap from 2.19 eV to 2.03 eV for lower Cd concentrations (x = 0.005) and increasing it to 2.41 eV for higher concentrations (x=0.01). The Hall data shows a wide range shift in electrical characteristics between the cadmium doped gamma-irradiated sample, and the pure sample, PS0. The electrical mobility increases from 6.05 V−1s−1 for PS0 to 4.95×102 V−1s−1 for GPS3 (higher cadmium concentration of x = 0.02), indicating a significant enhancement in which charge carriers can move through the material post-irradiation. Electrical resistivity shows a drastic increase from 4.42×101 Ωcm in PS0 to 9.41×102 Ωcm in GPS3, suggesting a marked increase in electrical conductivity post-irradiation. The findings demonstrate considerable changes in crystal characteristics, morphological transformations, increased crystallinity, and changed electrical properties, showing the promise of gamma-irradiated Cd-doped PbS in advanced optoelectronic device applications.

Aluminum-doped zinc oxide thickness controllable wavelengths in visible light and high responsivity devices using interrupted flow atomic layer deposition

In this study, we develop a highly sensitive visible light photodetector that utilizes a thin-film structure composed of low-cost aluminum-doped zinc oxide (AZO) and n-type silicon. The AZO thickness can be adequately controlled to fit the different wavelengths of interest for photodetectors in the visible light range using interrupted flow atomic layer deposition (ALD). This in situ aluminum doping method ensures a uniform aluminum distribution within the AZO thin films and effectively increases the internal film reflections and photoresponsivity. The Schottky interface with n-type silicon is created by degenerated AZO due to the lower Fermi level, and visible light can effectively penetrate the underlying depletion zone. Optical simulation of the high conductivity of AZO indicated that the optimal thickness was 54.6, 65.8, and 91.7 nm for devices illuminated with 450 nm blue, 525 nm green and 700 nm red light, respectively. Hall effect measurements confirmed that the AZO film can achieve a low resistivity of 5 × 10–4 Ω-cm and high carrier concentration of 3 × 1020 cm−3 at a suitable precursor ratio. Additionally, AZO films offer multifunctionality by providing optical antireflective properties and forming Schottky junctions with n-type silicon to enable photoelectric conversion. This multifunctional role of AZO was experimentally validated through electrical, optical, and optical-to-electrical experiments, which showed that the optimized device can reach an optical responsivity of approximately 10.7 AW−1 at specific visible light wavelengths. The significant photoelectrical conversion efficiency and simple thin-film structure design facilitate future applications in light intensity measurement, such as in colorimetry or fluorometry.

Low-Temperature Migration-Enhanced Epitaxial Growth of High-Quality (InAs)4(GaAs)3/Be-Doped InAlAs Quantum Wells for THz Applications

This investigation explores the structural and electronic properties of low-temperature-grown (InAs)4(GaAs)3/Be-doped InAlAs and InGaAs/Be-doped InAlAs multiple quantum wells (MQWs), utilizing migration-enhanced epitaxy (MEE) and conventional molecular beam epitaxy (MBE) growth mode. Through comprehensive characterization methods including transmission electron microscopy (TEM), Raman spectroscopy, atomic force microscopy (AFM), pump–probe transient reflectivity, and Hall effect measurements, the study reveals significant distinctions between the two types of MQWs. The (InAs)4(GaAs)3/Be-doped InAlAs MQWs grown via the MEE mode exhibit enhanced periodicity and interface quality over the InGaAs/Be-InAlAs MQWs grown through the conventional molecule beam epitaxy (MBE) mode, as evidenced by TEM. The AFM results indicate lower surface roughness for the (InAs)4(GaAs)3/Be-doped InAlAs MQWs by using the MEE mode. Raman spectroscopy reveals weaker disorder-activated modes in the (InAs)4(GaAs)3/Be-doped InAlAs MQWs by using the MEE mode. This originates from utilizing the (InAs)4(GaAs)3 short period superlattices rather than InGaAs, which suppresses the arbitrary distribution of Ga and In atoms during the InGaAs growth. Furthermore, pump–probe transient reflectivity measurements show shorter carrier lifetimes in the (InAs)4(GaAs)3/Be-doped InAlAs MQWs, attributed to a higher density of antisite defects. It is noteworthy that room temperature Hall measurements imply that the mobility of (InAs)4(GaAs)3/Be-doped InAlAs MQWs grown at a low temperature of 250 °C via the MEE mode is superior to that of InGaAs/Be-doped InAlAs MQWs grown in the conventional MBE growth mode, reaching 2230 cm2/V.s. The reason for the higher mobility of (InAs)4(GaAs)3/Be-doped InAlAs MQWs is that this short-period superlattice structure can effectively suppress alloy scattering caused by the arbitrary distribution of In and Ga atoms during the growth process of the InGaAs ternary alloy. These results exhibit the promise of the MEE growth approach for growing high-performance MQWs for advanced optoelectronic applications, notably for high-speed optoelectronic devices like THz photoconductive antennas.

Charge-spin interconversion in nitrogen sputtered Pt via extrinsic spin Hall effect.

We experimentally investigate the charge-spin interconversion by introducing a lighter impurity, namely nitrogen (N) into Pt by varying the nitrogen gas flow rate,Qfrom 0 to 20%, and studying the Onsager reciprocity of spin Hall effect (SHE) via complementary methods of spin-torque ferromagnetic resonance and spin-pumping inverse SHE measurements, respectively. We notice a reduction in the crystalline nature of Pt upon nitrogen incorporation. We observe the influence of extrinsic side-jump scattering induced SHE by measuring the spin Hall efficiency,θSHin a wide temperature range from 10 to 296 K. This work establishes the incorporation of N in Pt by using sputtering, to enhance the SHE via extrinsic scattering as well as to observe the reciprocal effects of charge-spin interconversion.

Thickness and Mg doping of graded AlGaN layers: Influence on contact layer's structural and electrical properties for DUV emitters

One of the methods to improve p-doping properties in (Al)GaN-based materials is using a technique called polarization doping. In our study, two sets of p-AlGaN contact layers with different thicknesses of the graded layer were deposited by metalorganic vapor phase epitaxy. The grown samples were investigated by atomic force microscopy, secondary ion mass spectrometry, X-ray diffraction and Hall effect measurements to study the influence of the thickness of the graded Al0.6→0Ga0.4→1N:Mg layer on the structural and the electrical properties of the whole grown structure. Additionally, theoretical calculations for the contact structures with different thicknesses of the p-Al0.6→0Ga0.4→1N graded layer were performed. The obtained results show that the concentration of p-type carriers on the p-GaN/p-AlGaN gradient interface decreases with increasing thickness of the graded layer. Our findings reveal that among the graded structures the highest concentration of holes, 1.2 × 1018 cm−3, was obtained for a structure with 50-nm-thick graded layer, while maintaining low sample resistivity. In addition, it was also shown that non-doping of the graded layer allows to improve electrical properties.

Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments

This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration and other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) in a simulated Venus environment (460 °C, 94 bar, complete chemical environment including CO2/N2/SO2). The mechanisms affecting the transistor performance and structural integrity in harsh environment were analyzed using a variety of experimental, simulation, and modeling techniques, including in situ electrical measurement (e.g., burn-in) and advanced microscopy (e.g., structural deformation). Through transistor, Transmission Line Method (TLM), and Hall-effect measurements vs temperature, it is revealed that the mobility decrease is the primary cause of reduction of on-state performance of this GaN transistor at high temperature. Material analysis of the device under test (DUT) confirmed the absence of foreign elements from the Venus atmosphere. No inter-diffusion of the elements (including the gate metal) was observed. The insights of this work are broadly applicable to the future design, fabrication, and deployment of robust III-N devices for harsh environment operation.

Reply to: Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials

Reply to: Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials

Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials

Safe practices for mobility evaluation in field-effect transistors and Hall effect measurements using emerging materials

Optical and electronic properties of BCN films deposited by magnetron sputtering.

Boron carbonitride (BCN) films containing hybridized bonds involving B, C, and N over wide compositional ranges enable an abundant variety of new materials, properties, and applications; however, their electronic performance is still limited by the presence of structural and electronic defects, yielding sluggish mobility and electrical conductivity. This work reports on mechanically stable BCN films and their corresponding optical and electronic properties. The ternary BCN films consisting of hybridized B-C-N bonds have been achieved by varying N2 flow by the radio frequency magnetron sputtering method. The BCN films show a bandgap value ranging from 3.32 to 3.82eV. Hall effect measurements reveal an n-type conductivity with an improved hall mobility of 226cm2/V s at room temperature for the optimal film. The n-BCN/p-Si heterojunctions exhibit a nonlinear rectifying characteristic, where the tunneling behavior dominates the injection regimes due to the density of defects, i.e., structural disorder and impurities. Our work demonstrates the tunable electrical properties of BCN/Si p-n diodes and, thus, is beneficial for the potential application in the fields of optics, optoelectronics, and electrics.

Radical electron-induced cellulose-semiconductors

Bio-semiconductors are expected to be similar to organic semiconductors; however, they have not been utilized in application yet. In this study, we show the origin of electron appearance, N- and S-type negative resistances, rectification, and switching effects of semiconductors with energy storage capacities of up to 418.5 mJ/m2 using granulated amorphous kenaf cellulose particles (AKCPs). The radical electrons in AKCP at 295 K appear in cellulose via the glycosidic bond C1–O1·–C4. Hall effect measurements indicate an n–type semiconductor with a carrier concentration of 9.89 × 1015/cm3, which corresponds to a mobility of 10.66 cm2/Vs and an electric resistivity of 9.80 × 102 Ωcm at 298 K. The conduction mechanism in the kenaf tissue was modelled from AC impedance curves. The light and flexible cellulose-semiconductors may open up new avenues in soft electronics such as switching effect devices and bio-sensors, primarily because they are composed of renewable natural compounds.

Thick crack-free {113} epitaxial boron-doped diamond layers for power electronics—Deposition with nitrogen addition and high microwave power

In this work, first, we investigate the effect of nitrogen addition in microwave plasma enhanced chemical vapor deposition on the growth of thick {113} epitaxial diamond layers. We identify a narrow range of nitrogen concentrations for the growth of crack-free thick epitaxial layers with a smooth surface morphology. Without nitrogen, cracks start to appear after a layer thickness of 7–10 μm due to elastic energy stored in the epitaxial layer, but the addition of nitrogen stabilizes layer growth. We also investigate the use of low microwave power density growth conditions to produce thick boron-doped epitaxial layers. We observe a very high boron incorporation efficiency using these growth conditions. Finally, we demonstrate the fabrication of a thick (>200 μm) {113} p+ monocrystal plate. The concentration of boron in heavily doped diamond with metallic conductivity has been investigated by the Hall effect measurement technique, Raman spectroscopy, and secondary ion mass spectroscopy. The growth of high quality thick {113} oriented epitaxial layer with high boron concentration (>1020 cm−3) and low resistivity and the fabrication for the freestanding p+ substrates are necessary steps for the fabrication of vertical electronic devices such as high power Schottky diodes.

Investigation of Nondestructive and Noncontact Electrical Characterization of GaN Thin Film on ScAlMgO4 Substrate Using Terahertz Time‐Domain Spectroscopic Ellipsometry with Characteristic Impedance Analytical Model

Semiconductor evaluation methods frequently require sample processing and carry the risk of defects and property changes. Therefore, nondestructive and noncontact electrical property measurement techniques are necessary. Terahertz time‐domain spectroscopic ellipsometry (THz‐TDSE) can simultaneously estimate the electrical properties and film thickness of a sample. However, whether this method can simultaneously determine electrical properties and film thickness for semiconductor thin films of 1 μm or less remains unclear. This study uses THz‐TDSE to evaluate the electrical properties and film thickness of a GaN thin film (≈0.8 μm thick) on a ScAlMgO4 substrate. Using the conventional analysis based on Fresnel's formula (FR model), which is used in the field of optics, uniquely determining the electrical properties and film thickness is not possible owing to multiple optimal solutions. Therefore, a model combining the characteristic impedance model used in the radio‐wave region with the FR model is employed in the analysis. The obtained values of electrical properties of the GaN thin film evaluated using THz‐TDSE are consistent with those using Hall effect measurement. Moreover, the film thickness is consistent with that measured from the cross‐sectional transmission electron microscopy observation.

Enhancing the Thermoelectric Properties of Conjugated Polymers by Suppressing Dopant-Induced Disorder.

Doping is a crucial strategy to enhance the performance of various organic electronic devices. However, in many cases, the random distribution of dopants in conjugated polymers leads to the disruption of the polymer microstructure, severely constraining the achievable performance of electronic devices. Here, it is shown that by ion-exchange doping polythiophene-based P[(3HT)1-x-stat-(T)x] (x=0 (P1), 0.12 (P2), 0.24 (P3), and 0.36 (P4)), remarkably high electrical conductivity of >400S cm-1 and power factor of >16µWm-1K-2 are achieved for the random copolymer P3, ranking it among highest ever reported for unaligned P3HT-based films, significantly higher than that of P1 (<40Scm-1, <4µWm-1K-2). Although both polymers exhibit comparable field-effect transistor hole mobilities of ≈0.1cm2V-1s-1 in the pristine state, after doping, Hall effect measurements indicate that P3 exhibits a large Hall mobility up to 1.2cm2V-1s-1, significantly outperforming that of P1 (0.06cm2V-1s-1). GIWAXS measurement determines that the in-plane π-π stacking distance of doped P3 is 3.44Å, distinctly shorter than that of doped P1 (3.68Å). These findings contribute to resolving the long-standing dopant-induced-disorder issues in P3HT and serve as an example for achieving fast charge transport in highly doped polymers for efficient electronics.