Halide Perovskite Semiconductors Research Articles

Sustainability pathways for perovskite photovoltaics.

Solar energy is the fastest-growing source of electricity generation globally. As deployment increases, photovoltaic (PV) panels need to be produced sustainably. Therefore, the resource utilization rate and the rate at which those resources become available in the environment must be in equilibrium while maintaining the well-being of people and nature. Metal halide perovskite (MHP) semiconductors could revolutionize PV technology due to high efficiency, readily available/accessible materials and low-cost production. Here we outline how MHP-PV panels could scale a sustainable supply chain while appreciably contributing to a global renewable energy transition. We evaluate the critical material concerns, embodied energy, carbon impacts and circular supply chain processes of MHP-PVs. The research community is in an influential position to prioritize research efforts in reliability, recycling and remanufacturing to make MHP-PVs one of the most sustainable energy sources on the market.

Mimicking nature to develop halide perovskite semiconductors from proteins and metal carbonates

Halide perovskite (HPs) nanostructures have recently gained extensive worldwide attentions because of their remarkable optoelectronic properties and fast developments. However, intrinsic instability against environmental factors—i.e., temperature, humidity, illumination, and oxygen—restricted their real-life applications. HPs are typically synthesized as colloids by employing organic solvents and ligands. Consequently, the precise control and tuning of complex 3D perovskite morphologies are challenging and have hardly been achieved by conventional fabrication methods. Here, we combine the benefits of self-assembly of biomolecules and an ion exchange reaction (IER) approach to customize HPs spatial shapes and composition. Initially, we apply a biomineralization approach, using biological templates (such as biopolymers, proteins, or protein assemblies), modulating the morphology of MCO3 (M = Ca2+, Ba2+) nano/microstructures. We then show that the morphology of the materials can be maintained throughout an IER process to form surface HPs with a wide variety of morphologies. The fabricated core–shell structures of metal carbonates and HPs introduce nano/microcomposites that can be sculpted into a wide diversity of 3D architectures suitable for various potential applications such as sensors, detectors, catalysis, etc. As a prototype, we fabricate disposable humidity sensors with an 11–95% detection range by casting the formed bio-templated nano/micro-composites on paper substrate.

From Chalcogen Bonding to S-π Interactions in Hybrid Perovskite Photovoltaics.

The stability of hybrid organic-inorganic halide perovskite semiconductors remains a significant obstacle to their application in photovoltaics. To this end, the use of low-dimensional (LD) perovskites, which incorporate hydrophobic organic moieties, provides an effective strategy to improve their stability, yet often at the expense of their performance. To address this limitation, supramolecular engineering of noncovalent interactions between organic and inorganic components has shown potential by relying on hydrogen bonding and conventional van der Waals interactions. Here, the capacity to access novel LDperovskite structures that uniquely assemble through unorthodox S-mediated interactions is explored by incorporating benzothiadiazole-based moieties. The formation of S-mediated LD structures is demonstrated, including one-dimensional (1D) and layered two-dimensional (2D) perovskite phases assembled via chalcogen bonding and S-π interactions, through a combination of techniques, such as single crystal and thin film X-ray diffraction, as well as solid-state NMR spectroscopy, complemented by molecular dynamics simulations, density functional theory calculations, and optoelectronic characterization, revealing superior conductivities of S-mediated LD perovskites. The resulting materials are applied in n-i-p and p-i-n perovskite solar cells, demonstrating enhancements in performance and operational stability that reveal a versatile supramolecular strategy in photovoltaics.

Wavelength-tunable photoluminescence of CsPbBr3 microcrystal via in situ halogen doping

Lead halide perovskite semiconductors have received significant attention in recent years as promising candidates for optoelectronic applications. Their controllable bandgap in nanostructures (nanocrystals, nanowires) has been widely and successfully investigated. Intentionally manipulating the atomic behavior with dopants in their macroscopic structure with high quality and stability is still challenging. We studied the crystal structure and photoluminescence (PL) behavior of the anion (Cl) doped CsPbBr3 microcrystals. The doped microcrystal with a low doping concentration has shown a large wavelength-tunable PL emission from 535 nm to 457 nm. Two separate emission peaks (blue and green) are carefully studied in the excitation power dependent PL spectra. The doping and excitation endow the perovskite microcrystal adjustable PL emission band and peak intensities, which may serve as a new degree of manipulation freedom in the color-tunable display and functional optoelectronics.

Evolution of structural dynamics in cesium lead halide perovskite colloidal nanocrystals from temperature-controlled synthesis.

Halide perovskite nanocrystals are at the forefront of materials research due to their remarkable optoelectronic properties and versatile applications. While their lattice structure and optical properties have been extensively investigated for the structure-property correlation, their lattice dynamics, the physical link between the lattice structure and optoelectronic properties, has been much less visited. We report the evolution of structural dynamics of a series of cesium lead halide perovskite nanocrystals whose size and morphology are systematically varied by synthesis temperature. Low-frequency Raman spectroscopy uncovers the nanocrystals' structural dynamics, including a relaxational spectral continuum from ligand librations and a phonon spectrum evolving with nanocrystal size. As the size of nanocrystals increases, their phonon spectrum becomes more intense, and their spectral weights redistribute with new first- and second-order modes being activated. The linewidth of the observed phonon modes generally broadens as the nanocrystal grows larger, an interesting deviation from the established phonon confinement model. We suggest that strong confinement and truncation of the lattice and ligands anchoring on the surface might lead to pinning of the lattice dynamics at nanoscale. These findings offer new insights into the bulk-nano-transition in halide perovskite soft semiconductors.

Efficient Charge Injection for Perovskite Light‐Emitting Transistor

AbstractMetal halide perovskite semiconductors have demonstrated remarkable performance in light‐emitting‐diode applications in recent years. However, their potential application in other emerging optoelectronic devices, such as light‐emitting field‐effect transistors (LEFETs) is impeded by poor luminous efficiency due to inefficient charge injection. Here, an n‐type MgZnInO (MIZO) as the channel layer is synthesized to achieve efficient electron injection in perovskite LEFETs. These findings indicate that the incorporation of Mg not only suppresses the generation of oxygen vacancies but also optimizes the energy level alignment. These synergistic effects reduce non‐radiative recombination and improve interfacial charge transport. Consequently, the MIZO‐based perovskite LEFETs exhibit an improvement in threshold voltage, subthreshold swing, and field‐effect mobility. The electroluminescence performance shows a peak external quantum efficiency (EQE) of 1.97% with a maximum brightness of 2.1 × 104 cd m−2, accompanied by low‐efficiency roll‐off (an EQE of 1.88% at the current density of 810 mA cm−2). To the best of the author's knowledge, this represents the best luminous efficiency reported for perovskite LEFETs to date.

Hot-Injection Synthesis of Cesium Lead Halide Perovskite Nanowires with Tunable Optical Properties.

Metal halide perovskite semiconductors have emerged as promising materials for various optoelectronic applications due to their unique crystal structure and outstanding properties. Among different forms, perovskite nanowires (NWs) offer distinct advantages, including a high aspect ratio, superior crystallinity, excellent light absorption, and carrier transport properties, as well as unique anisotropic luminescence properties. Understanding the formation mechanism and structure-property relationship of perovskite NWs is crucial for exploring their potential in optoelectronic devices. In this study, we successfully synthesized all-inorganic halide perovskite NWs with high aspect ratios and an orthorhombic crystal phase using the hot-injection method with controlled reaction conditions and surface ligands. These NWs exhibit excellent optical and electrical properties. Moreover, precise control over the halogen composition through a simple anion exchange process enables the tuning of the bandgap, leading to fluorescence emission, covering a wide range of colors across the visible spectrum. Consequently, these perovskite NWs hold great potential for efficient energy conversion and catalytic applications in photoelectrocatalysis.

Electrically Assisted Lasing in Metal Halide Perovskite Semiconductors

Electrically Assisted Lasing in Metal Halide Perovskite Semiconductors

Squeezing the Threshold of Metal‐Halide Perovskite Micro‐Crystal Lasers Grown by Solution Epitaxy

AbstractMetal halide perovskite semiconductors have demonstrated remarkable progress not only in photovoltaics and X‐ray detection but also in laser technologies. Particularly appealing is the simplicity with which micro‐crystallites can be epitaxially grown, thereby forming micro‐resonators suitable for lasing. Here, the laser threshold is optimized by selecting excitation laser parameters and by improving material quality. The latter process is conducted for formamidinium lead tribromide, emitting in the green spectral range. Depending on the growth method and parameters, the sizes of the micro‐resonators can be tuned between ≈3 and 23 micrometers. Under laser excitation systematically lower thresholds are observed for micro‐resonators in the 4–7 micrometer size range, than for larger ones, irrespective of growth method. Among three optimized growth methods, epitaxial growth via antisolvent vapor‐assisted crystallization exhibits the smallest threshold powers, indicating the highest material quality. This conclusion is supported by hyperspectral microscopic luminescence imaging and by transient photoluminescence. The best laser structures exhibit record threshold powers for epitaxially grown perovskites, indicating that the selected antisolvent vapor epitaxial growth holds great promises also for other perovskite materials.

Arising 2D Perovskites for Ionizing Radiation Detection.

2D perovskites have greatly improved moisture stability owing to the large organic cations embedded in the inorganic octahedral structure, which also suppresses the ions migration and reduces the dark current. The suppression of ions migration by 2D perovskites effectively suppresses excessive device noise and baseline drift and shows excellent potential in the direct X-ray detection field. In addition, 2D perovskites have gradually emerged with many unique properties, such as anisotropy, tunable bandgap, high photoluminescence quantum yield, and wide range exciton binding energy, which continuously promote the development of 2D perovskites in ionizing radiation detection. This review aims to systematically summarize the advances and progress of 2D halide perovskite semiconductor and scintillator ionizing radiation detectors, including reported alpha (α) particle, beta (β) particle, neutron, X-ray, and gamma (γ) ray detection. The unique structural features of 2D perovskites and their advantages in X-ray detection are discussed. Development directions are also proposed to overcome the limitations of 2D halide perovskite radiation detectors.

Selective Excitation of Exciton-Polariton Condensate Modes in an Annular Perovskite Microcavity.

Exciton-polariton systems composed of a light-matter quasi-particle with a light effective mass easily realize Bose-Einstein condensation. In this work, we constructed an annular trap in a halide perovskite semiconductor microcavity and observed the spontaneous formation of symmetrical petal-shaped exciton-polariton condensation in the annular trap at room temperature. In our study, we found that the number of petals of the petal-shaped exciton-polariton condensates, which is decided by the orbital angular momentum, is dependent on the light intensity distribution. Therefore, the selective excitation of perovskite microcavity exciton-polariton condensates under all-optical control can be realized by adjusting the light intensity distribution. This could pave the way to room-temperature topological devices, optical cryptographical devices, and new quantum gyroscopes in the exciton-polariton system.

Wide‐Gap Perovskites for Indoor Photovoltaics

Organic–inorganic halide perovskite semiconductors have revolutionized next‐generation photovoltaics (PV) due to several characteristics such as solution‐processability, gap tunability, and excellent charge generation and transport properties. This has made them very adaptable for various applications in light harvesting and photodetection. One such rapidly growing application is indoor photovoltaics (IPV) which have the potential to power standalone Internet of Things devices. IPV requires wider optimal bandgaps than solar cells (1.8 vs 1.3 eV) due to the differences between the spectra of artificial lights versus solar radiation. For IPV applications, the active layer wide‐gap perovskite must be developed systemically considering all other components of the device, such as interlayers, electrodes, and scaling. This perspective provides an overview of the potential and challenges facing perovskite‐based IPV from a theoretical, material, and experimental perspective. Furthermore, accurate characterization of perovskite IPVs under simulated indoor conditions is discussed and candidate perovskite PV (PPV) systems are presented to provide insight into IPV development. These include IPV‐optimized formamidinium cesium‐based perovskite, wide‐gap p‐i‐n devices, and 2D perovskite devices, tested under spectrophotometrically calibrated LED illumination at various indoor‐relevant illuminances and benchmarked against thermodynamic predictions. Finally, strategies required to create stable, optimized PPV devices for indoor applications are discussed.

Observation of Ferromagnetism in Dilute Magnetic Halide Perovskite Semiconductors.

Dilute magnetic semiconductors (DMSs) have attracted much attention because of their potential use in spintronic devices. Here, we demonstrate the observation of robust ferromagnetism in a solution-processable halide perovskite semiconductor with dilute magnetic ions. By codoping of magnetic (Fe2+) and aliovalent (Bi3+) metal ions into CH3NH3PbCl3 (MAPbCl3) perovskite, ferromagnetism with well-saturated magnetic hysteresis loops and a maximum coercivity field of 1280 Oe was observed below 12 K. The ferromagnetic resonance measurements revealed that the incorporation of aliovalent ions modulates the carrier concentration and plays an essential role in realizing the ferromagnetism in dilute magnetic halide perovskites. Magnetic ions are proposed to interact through itinerant charge carriers to achieve ferromagnetic coupling. Our work provides a new avenue for the development of solution-processable magnetic semiconductors.

Inorganic perovskite-based active multifunctional integrated photonic devices

The development of highly efficient active integrated photonic circuits is crucial for advancing information and computing science. Lead halide perovskite semiconductors, with their exceptional optoelectronic properties, offer a promising platform for such devices. In this study, active micro multifunctional photonic devices were fabricated on monocrystalline CsPbBr3 perovskite thin films using a top-down etching technique with focused ion beams. The etched microwire exhibited a high-quality micro laser that could serve as a light source for integrated devices, facilitating angle-dependent effective propagation between coupled perovskite-microwire waveguides. Employing this strategy, multiple perovskite-based active integrated photonic devices were realized for the first time. These devices included a micro beam splitter that coherently separated lasing signals, an X-coupler performing transfer matrix functions with two distinguishable light sources, and a Mach-Zehnder interferometer manipulating the splitting and coalescence of coherent light beams. These results provide a proof-of-concept for active integrated functionalized photonic devices based on perovskite semiconductors, representing a promising avenue for practical applications in integrated optical chips.

Materials chemistry for metal halide perovskite photovoltaics

Abstract Metal halide perovskite semiconductors are excellent materials for next-generation solar cells. As a result of research and development all over the world, the photoelectric conversion efficiency for single-cell devices has rapidly improved to over 26% (as of July 2023), while the record efficiency for silicon-on-perovskite tandem devices currently stands at 33.7% (reported in May 2023). Materials chemistry has made many important contributions toward these remarkable results. In this account, we will introduce our achievements in these areas of material chemistry research for improving the performance of perovskite photovoltaics, including the development of high-purity precursor materials, and precursor inks tailored for large-area printed perovskite films. Studies of the nucleation and crystallization process, including simulations, have led to the reliable fabrication of high-quality perovskite films. Diverse new charge collection materials, as well as compounds to effectively modify perovskite surfaces, have improved solar cell performance.

High-performance CsSnBr<sub>3</sub>/Si PN heterojunction photodetectors prepared by pulsed laser deposition epitaxy

Halide perovskite semiconductors have outstanding physical properties such as high light absorption coefficient, large carrier diffusion length, and high photoluminescence quantum efficiency, and demonstrate significant potential applications in optoelectronic devices such as photodetectors and solar cells. However, the toxicity and environmental instability associated with lead-based perovskites significantly limit their applications. An attractive solution is substituting tin for lead in perovskites and growing high-quality tin-based perovskite films. In this study, we adopt the pulsed laser deposition method to achieve the epitaxial growth of CsSnBr<sub>3</sub> films on silicon substrates. The morphologies, optical and electrical properties of the CsSnBr<sub>3</sub> films, as well as the CsSnBr<sub>3</sub>/Si heterojunction detectors, are comprehensively investigated with various characterization techniques, including XRD <i>2θ</i>-<i>ω</i> and <i>φ</i> scans, atomic force microscope, scanning electron microscope, photoluminescence and time-resolved photoluminescence spectroscopy, and Hall electrical measurements. The results indicate that such a CsSnBr<sub>3</sub> film grows epitaxially onto the silicon substrate via a face-to-face mode. Interestingly, an unusual temperature-dependent bandgap increase is found to be due to the high electron effective mass of CsSnBr<sub>3</sub>. The CsSnBr<sub>3</sub> film shows the P-type semiconductor behavior with a high mobility of 122 cm²/(V·s), enabling the formation of an ideal Type-II heterojunction with the silicon substrate. The CsSnBr<sub>3</sub>/Si semiconductor heterojunction detector exhibits distinctive heterojunction PN diode characteristics in the dark and a pronounced photoresponse under illumination. At zero bias, the detector displays a switch ratio exceeding 10<sup>4</sup>, responsivity of 0.125 mA/W, external quantum efficiency of 0.0238 %, detectivity (D*) of 2.1×10<sup>9</sup> Jones, response time 3.23 ms, and recovery time of 4.87 ms. Under a small bias of –1 V, the switch ratio decreases to 50, but responsivity and external quantum efficiency increase by 568 times. The detectors can maintain self-powered operation state with a high switch ratio of 10<sup>4</sup>, millisecond-level response time and millisecond-level recovery time. In conclusion, this work presents a self-powering, high-performance photodetector based on CsSnBr<sub>3</sub> epitaxial films integrated with silicon substrates.

Tuning of band gap and enhancing electronic properties of CsSnBr3 under high pressure for optoelectronic applications

Recently, inorganometallic halide perovskite semiconductors have emerged as promising candidate for novel industrial demands like optoelectronic devices and photovoltaic (PV) solar cells. Herein, the essential properties of CsSnBr3 have been calculated through the first principles DFT. CsSnBr3 shows stable cubic structure (Pm-3m) at all pressures accompany by ductile nature and strong resistance to shear deformation. Pressure clearly affects the M-M direct band-gap, Eg = 0.979 eV (P = 0 GPa), 0.334 eV (P = 10 GPa), 0.271 eV (P = 20 GPa), 0.078 eV (P = 30 GPa), and 0.0 eV (P = 40 GPa). We found that the nonmagnetic semiconductor CsSnBr3 shows high absorption in the visible spectrum at all pressures. The responses disclose that optical parameters increase and drag towards high energies with an increase of pressure. The narrow band-gap and high absorption have made CsSnBr3 suitable material for electronics, optoelectronics and photovoltaics applications. The thermoelectric response reveals that the conduction is through electrons (n-type) and perfect (ZT = 1.0) at high temperature and pressure, which unveil the potential of CsSnBr3 for thermoelectric devices. The current results would be beneficial and can provide a gateway to how the physical properties of CsSnBr3 could be tuned by applying pressure.

Breaking the Condon Approximation for Light Emission from Metal Halide Perovskite Nanocrystals.

The idea that the electronic transition dipole moment does not depend upon nuclear excursions is the Condon approximation and is central to most spectroscopy, especially in the solid state. We show a strong breakdown of the Condon approximation in the time-resolved photoluminescence from CsPbBr3 metal halide perovskite semiconductor nanocrystals. Experiments reveal that the electronic transition dipole moment increases on the 30 ps time scale due to structural dynamics in the lattice. Ab initio molecular dynamics calculations quantitatively reproduce experiments by considering excitation-induced structural dynamics.

Weak Dispersion of Exciton Landé Factor with Band Gap Energy in Lead Halide Perovskites: Approximate Compensation of the Electron and Hole Dependences.

The optical properties of lead halide perovskite semiconductors in vicinity of the bandgap are controlled by excitons, so that investigation of their fundamental properties is of critical importance. The exciton Landé or g-factor gX is the key parameter, determining the exciton Zeeman spin splitting in magnetic fields. The exciton, electron, and hole carrier g-factors provide information on the band structure, including its anisotropy, and the parameters contributing to the electron and hole effective masses. Here, gX is measured by reflectivity in magnetic fields up to 60T for lead halide perovskite crystals. The materials band gap energies at a liquid helium temperature vary widely across the visible spectral range from 1.520 up to 3.213eV in hybrid organic-inorganic and fully inorganic perovskites with different cations and halogens: FA0.9Cs0.1PbI2.8Br0.2, MAPbI3, FAPbBr3, CsPbBr3, and MAPb(Br0.05Cl0.95)3. The exciton g-factors are found to be nearly constant, ranging from +2.3 to +2.7. Thus, the strong dependences of the electron and hole g-factors on the bandgap roughly compensate each other when combining to the exciton g-factor. The same is true for the anisotropies of the carrier g-factors, resulting in a nearly isotropic exciton g-factor. The experimental data are compared favorably with model calculation results.

High performance CsPbBr3 epitaxial film photodetector with ultralow dark current and record detectivity

At present, spin coating is commonly used for perovskite film detectors, which has large photocurrent in the dark state due to the poor control on film growth and low crystal quality. In this Letter, pulsed laser deposition has been introduced to grow high quality CsPbBr3 epitaxial films, and the effect of substrate temperature on the film quality was studied during the epitaxial process. Planar metal–semiconductor–metal photoconductive detectors based on such epitaxial CsPbBr3 thin films with dark current as low as 11 pA at a bias voltage of 2 V was achieved. Under the illumination of a 450 nm laser with a power density of 0.65 μW cm−2, the responsivity, external quantum efficiency, and detectivity of the devices reach 12.796 AW−1, 2996%, and 3.38 × 1014 Jones, respectively. The maximum on/off ratio can be 2.38 × 105 under high-intensity 450 nm laser irradiation of 148 mW cm−2. In contrast, the spin-coated CsPbBr3 film-based detector with the same device configuration exhibit dark current that is two orders of magnitude higher and an on/off ratio of three orders of magnitude smaller than those of the epitaxial film devices. Therefore, due to their high-quality, thickness-control, and easy-integration, such epitaxial perovskite thin films can be used as a platform for the study of more functionalities of halide perovskite semiconductors and related devices.