half-Heusler Compounds Research Articles

Predictions of new KTaSn half-Heusler compound for spintronic, thermoelectric and optoelectronic applications: A first-principles study

Structural, electronic, magnetic, elastic, optical, thermodynamic, and thermoelectric characteristics of KTaSn half-Heusler compound are investigated using density functional theory (DFT). GGA-mBJ approximation calculations showed a direct minority spin band gap energy of 1.28 eV and a spin polarization of 100 %. The calculated total magnetic moment and Curie temperature are 2 μB and 380 K respectively. Elastic constants study and formation energy calculation revealed that the material is mechanically and thermodynamically stable and has a ductile nature. 0ptical properties of KTaSn half-Heusler alloy were similarly investigated to highlight its potential for optoelectronic applications. Finally, utilizing Boltzmann's quasi-classical theory, transport properties were studied and yielded a high figure of merit ZT value of 0.62 indicating that the material is suitable for applications in thermoelectric devices.

Optimizing thermoelectric properties of CoTiP half-Heusler via doping with Br-, Se- and Ge atoms using first principle study

The optimization of thermoelectric materials is crucial for advancing energy conversion technologies. This study explores the electrical and thermoelectric properties of Br-, Ge-, and Se-doped CoTiP half-Heusler compounds using the plane-augmented-wave (PAW) method based on Density Functional Theory (DFT) alongside the semiclassical Boltzmann transport equation (BTE) and Debye-Callaway approximation. While previous research has focused on various doping strategies to enhance thermoelectric performance, specific impacts of Br, Ge, and Se doping on the electronic structure of CoTiP remain unexplored. Our analysis reveals that Ge-doped CoTiP exhibits the largest band gap energy of 1.2597 eV, followed by Se- and Br-doped structures with band gaps of 0.8064 eV and 0.678 eV, respectively. The Fermi level shifts towards the conduction band for both Br- and Se-doped alloys while shifting towards the valence band for Ge-doped alloys. Upon doping, we observe significant enhancements in the Seebeck coefficient and electrical conductivity. Power factor (S2σ) enhancements range from 0.01611 W/m K2 for CoTiP0.875Br0.125, 0.03445 W/m K2 for CoTiP0.875Se0.125 and finally, 0.04191 W/m K2 for CoTiP0.875Ge0.125, surpassing undoped material values by up to 93 %. Finally, the optimal value of figure of merit (ZT) increases to 0.65, 0.57, and 0.2 at 900 K, achieved by doping Ge, Se and Br, respectively, at the P site, with performance gain about 92 %. Hence, doping has optimized the thermoelectric performance of the CoTiP half-Heusler.

First-principles insights into thermoelectric behavior of XNiAs (X = Sc, Y) half-Heusler compounds

Abstract Half-Heusler (HH) compounds are regarded as potential candidates for thermoelectric devices to convert waste heat energy into electrical power, which could help mitigate the ongoing energy crisis. In this study, we investigate the structural, electronic, magnetic, and thermoelectric properties of HH compounds XNiAs (X = Sc, Y) using Density Functional Theory (DFT) and semi-classical Boltzmann transport theory (BTE). The compounds are non-magnetic semiconductors with an indirect band gap of 0.48 ( 0.50) eV for ScNiAs (YNiAs) respectively. Both materials show dynamic and mechanical stability, with ScNiAs displaying brittleness and YNiAs exhibiting ductility. At room temperature, the lattice thermal conductivity (κ l ) for ScNiAs is 28.67 W/mK, while for YNiAs, it is 15.21 W/mK and both decrease as the temperature rises. The highest value of power factors is 29.03 μW/cmK2 and 29.74 μW/cmK2 for ScNiAs and YNiAs respectively at 1100 K for n-type doping. The optimal values of the figure of merit (zT) for n-type doping are 0.33 for ScNiAs and 0.58 for YNiAs at 1100 K. Both compounds exhibit better thermoelectric performance for n-type doping compared to p-type doping. The presence of flat bands and higher κ l limits these materials from achieving higher zT values.

Understanding the pressure effect on the physical properties of half-Heusler semiconductor LiCaX (X = As, Sb, N) compounds from Ab-initio calculations

The study delves into the structural, elastic, electronic, thermodynamic, and lattice dynamical and optic properties of LiCaX (X = As, Sb, N) ternary half-Heusler compounds under varying pressure and temperature conditions. Employing density functional theory with the generalized gradient approximation (GGA) in VASP codes, the initial steps involve optimizing the structure of the compound (cubic MgAgAs-type, space group F43m, C1b), determining elastic constants (C11, C12, and C44), and calculating elastic moduli (bulk modulus, shear modulus, Young's modulus). Other mechanical parameters such as Pugh's ratio, Poisson's ratio, and Zener anisotropy factor are also derived, providing insights into the brittle/ductile characteristics and isotropic/anisotropic behavior. The study further explores different vibrational modes in the compounds, and the effects of pressure on elastic anisotropy, vibrational, and optical properties are thoroughly investigated. Utilizing the quasi-harmonic Debye model, the research successfully reports V/Vo, bulk modulus, thermal expansion coefficient, and heat capacity at constant volume over a temperature range from 0 to 1000 K. The variation of photon energy is analyzed concerning the real and imaginary parts of the dielectric constant, refractive indices, extinction coefficient, reflectivity, and energy loss function up to 20 eV. The findings encapsulate the fundamental physical properties of all considered compounds, concluding with suggestions for potential future research avenues.

KCaAs and KCaP: promising half-Heusler compounds for UV protection and thermoelectric applications

This study investigates the structural, electrical, optical, and thermoelectric properties of the half-Heusler compounds KCaAs and KCaP using the Full-Potential Linearized Augmented Plane Wave (FP-LAPW) method within the framework of density functional theory. Our analysis reveals that both compounds exhibit favourable characteristics for high-performance applications. Specifically, KCaAs and KCaP show high static refractive indices and significant reflectivity in the ultraviolet (UV) range, making them ideal for UV protection and optical devices. Thermoelectric analysis indicates that both materials are p-type semiconductors with high Seebeck coefficients at low temperatures, high electrical conductivity, and relatively low thermal conductivity. The temperature-dependent figure of merit ( ZT ) reveals robust thermoelectric performance across a wide temperature range, with maximum ZT values of approximately 0.77 for both compounds. These results suggest that KCaAs and KCaP are promising candidates for thermoelectric applications, offering significant potential for energy conversion and sustainable energy solutions.

Exploring the electronic, magnetic and thermoelectric properties of TbPtBi half-Heusler: DFT study

Abstract In this investigation, we employed density functional theory to scrutinize the structural, electronic, magnetic, thermoelectric, and phonon properties of the topological half-Heusler (HH) TbPtBi compound. The stable phonon dispersion spectrum affirms the dynamical stability of the compound. The inclusion of spin-orbit coupling (SOC) significantly influenced the compound’s electronic and thermoelectric properties. The density of state (DOS) confirmed the impact of SOC on the topologically non-trivial metallic behavior of TbPtBi under the equilibrium lattice constant. The SOC altered the DOS at the Fermi level, leading to band splitting and a notable 70% reduction in state density. The Tb-4f electrons in the compound induce total magnetization in AFM (−5.93 µB/cell) and FM (5.94 µB/cell) phases, while SOC eliminates this magnetization. The thermoelectric performance of TbPtBi under compressive and tensile strain has been systematically studied. The result indicate that compressive strain causes a notable increment in Seebeck coefficient and Power factor (20.4 × 1011 W K−2 m−1) of this compound at room temperature. High thermoelectric performance under compressive strain in the HH compound TbPtBi might open new avenues for investigating other topological thermoelectric materials.

Effect of Pressure on Thermoelectric Performance of Half Heusler Compounds

In this work, the density functional theory (DFT) combined with Boltzmann transport equations are used to explore the effect of pressure on the structural, mechanical, thermal, and electronic properties of two half Heusler compounds PdXSn (X = Zr,Hf). The electronic band structure is tuned under pressure which enhances the thermoelectric properties of both compounds. The band gap opens with pressure and its value is 0.91 eV (1.26) for PdZrSn and 0.82 eV (1.16 eV) for PdHfSn at 0GPa (30GPa). The indirect nature does not alter at any pressure. The seebeck coefficient enhances from 900 μV/K to 1161 μV/K for PdZrSn and from 763 μV/K to 1012 μV/K for PdHfSn at pressure 0GPa to 30GPa. Similar trends observed in case of electrical conductivity and electronic part of thermal conductivity. But the lattice thermal conductivity is reduced from15.16 W/mKto 12.51 W/mK for PdZrSn and from 9.53 W/mK to 8.34 W/mK for PdHfSn at 30GPa respectively. Overall, the figure of merit ZT is elevated and attained maximum value of 0.45(0.55) for PdZrSn (PdHfSn) under pressure up to 30GPa.

Enhanced optoelectronic and thermoelectric properties of half Heusler compounds KXSb (X = Be, Mg, Ca and Sr): A first principle study

In the present paper, structural, electronic, elastic, thermodynamic, optical, and thermoelectric properties of h-H alloys KXSb (X = Be, Mg, Ca, and Sr) are investigated for the first time. These properties were explored using quantum mechanical model – the density functional theory (DFT) with both GGA-PBE and TB-mBJ exchange-correlation functional. The Boltzmann transport equations and the Full Potential Linearized Augmented Plane wave (FP-LAPW) approach, as built into the WIEN2k code, are used to investigate these properties. The band structures and density of states (DOS) are also studied. The half-Heusler compounds show semiconductor properties with both the GGA and mBJ methods, while the KBeSb alloy exhibits metallic nature under the GGA-PBE approach. The elastic and thermo dynamical properties were also investigated, and the results revealed that the compounds are mechanically and thermally stable. The observed high Debye temperature (ϴD) implies that the alloy is harder and possesses a significant Debye sound velocity. The current paper highlights the optical and thermoelectric applications of the alloys. At 900 K, KCaSb exhibits maximum power factors of 8.83 × 1011 (W/mK2s) with the GGA-PBE method and 8.19 × 1011 (W/mK2s) with the TB-mBJ approach.

Ab initio investigation of the structural, mechanical, electronic, thermodynamic, and optical properties of V2FeNiGe2 and Hf2FeNiSb2 double half-Heusler compounds

In the present work, using ab initio density-functional theory methods based on the Quantum ESPRESSO package, we have investigated the structural, elastic, electronic, and optical properties of 18-electron V2FeNiGe2 and Hf2FeNiSb2 double half-Heusler alloys. The calculated elastic properties suggest a ductile behavior with metallic bonding for V2FeNiGe2 and a brittle behavior with covalent bonding for Hf2FeNiSb2. The thermodynamic properties (Debye temperature, melting temperature) are also predicted and discussed for the studied alloys. The alloys are found to be semiconducting with indirect band gaps of 0.53 eV for V2FeNiGe2 and 0.47 eV for Hf2FeNiSb2. We also computed and analyzed their optical properties (dielectric function, optical conductivity, refractive index, absorption index, and reflectance) and our calculations suggest that both materials have high absorption coefficient and optical conductivity in the UV as well as visible region. The results make them potential candidates for the manufacture of opto-electronic devices.

First principles quantum analysis of the structural, electronic, optical, spintronic, and mechanical properties of doped half-Heusler compounds for green energy applications

First principles quantum analysis of the structural, electronic, optical, spintronic, and mechanical properties of doped half-Heusler compounds for green energy applications

Strategic Design and Mechanistic Understanding of Vacancy-Filling Heusler Thermoelectric Semiconductors.

Doping narrow-gap semiconductors is a well-established approach for designing efficient thermoelectric materials. Semiconducting half-Heusler (HH) and full-Heusler (FH) compounds have garnered significant interest within the thermoelectric field, yet the number of exceptional candidates remains relatively small. It is recently shown that the vacancy-filling approach is a viable strategy for expanding the Heusler family. Here, a range of near-semiconducting Heuslers, TiFexCuySb, creating a composition continuum that adheres to the Slater-Pauling electron counting rule are theoretically designed and experimentally synthesized. The stochastic and incomplete occupation of vacancy sites within these materials imparts continuously changing electrical conductivities, ranging from a good semiconductor with low carrier concentration in the endpoint TiFe0.67Cu0.33Sb to a heavily doped p-type semiconductor with a stoichiometry of TiFe1.00Cu0.20Sb. The optimal thermoelectric performance is experimentally observed in the intermediate compound TiFe0.80Cu0.28Sb, achieving a peak figure of merit of 0.87 at 923 K. These findings demonstrate that vacancy-filling Heusler compounds offer substantial opportunities for developing advanced thermoelectric materials.

Study of the physical properties of the half-heusler XBrH with (X= sr, Ca and mg) compounds

Half-Heusler alloys are among the most promising thermoelectric materials for medium- and high-temperature waste heat recovery applications. This study investigates the physical properties of Half-Heusler compounds XBrH, with X = Sr, Ca, and Mg. We explored the structural, electronic, optical, and thermoelectric properties of these compounds using density functional theory (DFT) as implemented in the Wien2k package. The Generalized Gradient Approximation (GGA) as proposed by Perdew-Burke-Ernzerhof (PBE) and the modified Becke-Johnson (mBJ) functional were employed to calculate the exchange-correlation interactions. After doing structural optimization for a range of parameters, we discovered that the SrBrH compound is more stable than the CaBrH and MgBrH compounds. Our results show that the density of state calculations indicate semiconductor behavior for the XBrH with (X = Sr, Ca, and Mg) compounds. We also evaluated the real and imaginary parts of the dielectric tensor, the refractive index, the absorption coefficient, the electron energy loss, and the real and imaginary components of the optical conductivity, among other optical parameters. Additionally, we investigated the figure of merit (ZT), electronic and lattice thermal conductivity, Seebeck coefficient, and electrical conductivity. The MgBrH, CaBrH and SrBrH compounds showed p-type behavior, with positive values for the Seebeck coefficient and the greatest value of ≈180 μV/K, according to the thermoelectric data. At 1000 K, the ZT reach their highest values for CaBrH, SrBrH, and MgBrH, respectively, at 2.9, 2.8, and 0.9. The physical properties of the XBrH with (X = Sr, Ca, and Mg) compounds have been studied in detail.

Enhanced Thermoelectric Performance of ZrCoSb Half-Heusler Compounds by Sn–Bi Codoping

Enhanced Thermoelectric Performance of ZrCoSb Half-Heusler Compounds by Sn–Bi Codoping

Investigation of the structural, mechanical, anisotropic, thermal conductivity, electronic, and phonon properties of RhTiZ(Z: As, sb) half heusler compounds under high pressure: A DFT study

This investigation delves into the effects of pressure on the structural, elastic, thermal conductivity, anisotropy, electronic, and phonon properties of the RhTiZ (Z: As, Sb) compound, characterized by a half-Heusler structure, employing the first-principles method. Parameters such as lattice constant, volume, density, bulk modulus, the first derivative of the bulk modulus, and energy were meticulously scrutinized at zero pressure, drawing comparisons with theoretical and experimental data and existing literature. Throughout all pressure values, RhTiZ (Z: As, Sb) compounds exhibit robust structural stability, meeting the stringent criteria outlined by Born, with no discernible signs of instability even under heightened pressure conditions. The compound showcases ductile characteristics based on the Pugh ratio (G/B), Cauchy pressure (C12–C44, C″), and Poisson ratio (λ) criteria. Employing the VESTA program, anisotropic properties were comprehensively assessed in three dimensions, considering the influence of pressure. In terms of electronic properties, the compound maintains its semiconducting nature, resiliently preserving this trait amidst variations in pressure. The absence of negative frequencies in the phonon distribution curve serves as a testament to the dynamic stability inherent in the compound. Finally, a comprehensive evaluation was conducted to delineate the repercussions of pressure on both the physical and electronic attributes of the RhTiZ (Z: As, Sb) compound, which holds promise for applications in thermal insulation materials.

Disclosing magnetic clusters in the metallic half-Heusler ferromagnet Cr4PtGa17 with a breathing pyrochlore lattice

We report a ferromagnetic resonance (FMR) study of a single crystal of Cr4PtGa17, the first material of a half-Heusler (HH) type with a metallic ferromagnetic breathing pyrochlore structure. The spatial distribution of the magnetic free energy density derived from the FMR data appears to be of a cubic symmetry despite the lower symmetry coordination of magnetic Cr ions. This surprising finding strongly suggests that the Cr4Ga14 structural unit at the Y site of the HH general XYZ formula forms an octahedrally shaped integral magnetic cluster, likely due to strong exchange interaction between the Cr ions via covalent Cr-Ga-Cr bonds. The presence of magnetic clusters within a regular metallic lattice appears to be a new intriguing characteristics of these novel types of HH compounds whereas Cr4PtGa17, at the same time, constitutes the rare example of such metallic pyrochlore-type material.

The A-Ni chemical bond in AIIINiSb (AIII=Sc, Y, Er) half-Heusler materials triggers the formation of anomalous vacancy defects

Defects exert a profound influence on thermoelectric materials by altering electronic band structures and significantly impacting their performance. Despite being a potentially promising thermoelectric material, the mechanism behind defect formation in half-Heusler (HH) compounds ABX remains unclear, impeding the enhancement of their thermoelectric properties. In this study, we investigated the intrinsic defect formation energies for AⅢNiSb (AⅢ = Sc, Y, Er) and other 9 HH compounds, namely AⅣNiSn (AⅣ = Ti, Zr, Hf), AⅤFeSb (AⅤ = V, Nb, Ta), and AⅣCoSb (AⅣ = Ti, Zr, Hf), using first-principles calculations and thermodynamics. The results reveal that AⅢNiSb (AⅢ = Sc, Y, Er) exhibits anomalous B (Ni) vacancy defects, with their formation energies being significantly lower than those of the corresponding B vacancy defects in the other 9 HH compounds. This anomaly can be attributed to the strength of the A-B bonds, where a decrease in bond strength leads to a decrease in the formation energy of B vacancies. This approach of exploring the influence of interatomic bond strength on defect formation is not only insightful for HH compounds but also holds potential applications in defect studies across various materials, offering a broader perspective on the fundamental mechanisms governing defect formation and stability.

A first principles study of stability, electronic and thermoelectric characteristics of novel high temperature half- heusler alloys ScAgX (X=Si,Ge,Sn)

To meet the ever-increasing renewable energy demand Half- Heusler (HH) materials can be a potential candidate. Heusler materials are seeking popularity as efficient high-temperature thermoelectric materials. Here we systematically investigated the structural, electronic, mechanical and thermoelectric properties of novel HH compounds ScAgX (X = Si,Ge,Sn) in the framework of the first principles approach. These materials are found to be chemically, mechanically and dynamically stable. Born-Oppenheimer molecular dynamics simulations (BOMD) verify the thermal stability of these materials from 300 K to 1100 K. The semiconducting nature of these materials is confirmed by the electronic band structure. ScAgX (X = Si,Ge,Sn) have an indirect band gap of 0.37 eV, 0.42 eV and 0.38 eV respectively. A high value of Seebeck coefficient of 6351 μV/K, 6955 μV/K and 6558 μV/K has been obtained at room temperature. ScAgSi shows a high value of electrical conductivity (∼106 S/m) among these compounds at room temperature. The calculated value of the figure of merit (ZT) of ScAgX (X = Si,Ge,Sn) is 0.12, 0.08 and 0.16 at 1100 K respectively. Our present investigation shows that these materials can be a potential candidate for high-temperature thermoelectric power generation.

Interplay between Structural, Electronic, and Magnetic Properties in the p0-d Semi-Heusler Compounds: The Case of Li-Based Compounds

Half-metallic semi-Heusler compounds (also known as half-Heusler compounds) are currently at the forefront of scientific research due to their potential applications in spintronic devices. Unlike other semi-Heuslers, the p0(d0)-d compounds do not appear to crystallize in the typical variant of the C1b structure. We investigate this phenomenon in the p0-d Heusler compounds LiYGa and LiYGe, where Y varies between Ca and Zn, using first-principles ab initio electronic band-structure calculations. We examine the electronic and magnetic properties of these compounds in relation to the three possible C1b structures. Notably, LiVGa, LiVGe, LiMnGa, and LiCrGe are half-metallic ferromagnets across all three variations of the C1b lattice structure. Our findings will serve as a foundation for future experimental studies on these compounds.

Comparison of the excellent thermoelectric properties of the half-Heusler compounds RbMgSb with a host-guest structure and LiMgSb

In this work, we systematically studied the thermoelectric (TE) transport properties of the half-Heusler compounds AMgSb (A = Li, Rb) based on an incorporation of first-principles calculations with self-consistent phonon theory and Boltzmann transport equations. We noted significant changes in the vibrational behavior of alkali metal atoms with a substantial increase in atomic mass. This alteration led to the formation of a host-guest structure in RbMgSb. In contrast, the stronger harmonic vibrations in LiMgSb results in it maintaining a Half-Heusler structure, without the pronounced anharmonicity found in RbMgSb. The calculation results reveal that RbMgSb has ultra-low lattice thermal conductivity κL, which is ten times lower than LiMgSb. We show that rattlers cause tenfold reductions in the thermal conductivity by increasing the phonon–phonon scattering probability, occurred in a wide frequency range. In addition, after careful consideration of multiple scattering mechanisms, the multiple valleys, high dispersion, flat band edges and band asymmetry near the Fermi level give both materials excellent electron transport properties. At the same time, LiMgSb itself already has a very low electron thermal conductivity κe, but the κe of RbMgSb is ten times smaller than that. As a consequence, remarkable ZT values of 2.51 and 3.45 at 900 K are captured in n-type LiMgSb and p-type RbMgSb, respectively. These findings reveal the promising potential of AMgSb in TE applications.

Spin-polarized DFT investigations of novel KVSb half-Heusler compound for spintronic and thermodynamic applications

In this study we have investigated the robust phase stability, elasto-mechanical, thermophysical and magnetic response of KVSb half Heusler compound by implementing density functional theory (DFT) models in WIEN2k simulation package. The dynamic phase stability is computed in phase type I, II & III phase configurations by optimising their energy. It is observed that given compound is more stable in spin-polarized state of phase type-III. To explore the electronic band structure, we apply the generalised gradient approximation along with Hubbard potential U. The electronic band profile of the Heusler alloy display a half-metallic nature. Moreover, the calculated second-order elastic parameters divulge the brittle nature. To understand the thermodynamical and thermoelectric stability of the alloy at various temperature and pressures ranges Quasi-Harmonic Debye model is executed successfully. The computed value of magnetic moment (MM) found in good agreement with Slater-Pauling rule. Our findings confirms that the predicted half Heusler alloy can be used in various spintronics and thermoelectric applications.