Growth Of NiO Films Research Articles

Effects of atomic oxygen on the growth of NiO films by reactive magnetron sputtering deposition

Reactive sputtering deposition has been widely applied to the preparation of oxide films, but a method is still needed to stably control the deposition process and the film growth. In this work, the plasma in the vicinity of sputtering target is studied by optical emission spectroscopy and the atomic oxygen density ([O]) is linked to the sputtering mode and the growth of NiO films. The NiO films can be deposited either in oxide mode or in the transition region, whereas the [O] value plays an important role in determining the growth behavior of NiO films and the crystallinity. In the transition region, the (111)-oriented growth of NiO films is preferential and the crytallinity is improved with the decrease in the [O] value. In the oxide mode, the NiO films are preferentially (001)-oriented and exhibit a relatively good crystallinity. By fixing the O2/Ar flow ratio at a constant, the [O] value is explored as a function of substrate temperature, showing that the oxygen desorption may have significant impacts on the [O] value as the substrate temperature is higher than 400 °C.

Effects of Residual Water Molecules on Growth of NiO Films on Ag(100)

Effects of Residual Water Molecules on Growth of NiO Films on Ag(100)

Growth of NiO films on various GaAs faces via electron bombardment evaporation

Growth of NiO films was examined on various crystal faces of GaAs by using a single electron bombardment source. Use of alkali halide buffer layers achieved good quality of epitaxial growth on GaAs (001). Electron spectroscopies (Auger electron spectroscopy, ultraviolet photoelectron spectroscopy, electron energy loss spectroscopy) revealed that the grown NiO film has almost the same electronic structure as bulk NiO. This method helps integration of 3d transition-metal oxides on technologically important materials such as GaAs or Si.