Giant Piezoresistive Effect Research Articles

Piezoresistive Effect with a Gauge Factor of 18 000 in a Semiconductor Heterojunction Modulated by Bonded Light-Emitting Diodes.

Giant piezoresistive effect enables the development of ultrasensitive sensing devices to address the increasing demands from hi-tech applications such as space exploration and self-driving cars. The discovery of the giant piezoresistive effect by optoelectronic coupling leads to a new strategy for enhancing the sensitivity of mechanical sensors, particularly with light from light-emitting diodes (LEDs). This paper reports on the piezoresistive effect in a 3C-SiC/Si heterostructure with a bonded LED that can reach a gauge factor (GF) as high as 18 000. This value represents an approximately 1000 times improvement compared to the configuration without a bonded LED. This GF is one of the highest GFs reported to date for the piezoresistive effect in semiconductors. The generation of carrier concentration gradient in the top thin 3C-SiC film under illumination from the LED coupling with the tuning current contributes to the modulation of the piezoresistive effect in a 3C-SiC/Si heterojunction. In addition, the feasibility of using different types of LEDs as the tools for modulating the piezoresistive effect is investigated by evaluating lateral photovoltage and photocurrent under LED's illumination. The generated lateral photovoltage and photocurrent are as high as 14 mV and 47.2 μA, respectively. Recent technologies for direct bonding of micro-LEDs on a Si-based device and the discovery reported here may have a significant impact on mechanical sensors.

Strain-induced splitting in valence band of Si–Ge whiskers

The temperature dependences of resistance for the p-type conductivity solid solution silicon–germanium whiskers doped by boron with concentration of 1 × 1018 cm−3 were investigated in the temperature range of 4.2–300 K and under the uniaxial compressive strain till − 3 × 10–3 rel. un. We studied the strain influence, which was caused on a spin–orbit splitting in the valence band spectrum. As an outcome, the spin–orbit splitting energies for both light and heavy holes were discovered based on the k–p method. The strain-induced effects of solid solution Si0.2Ge0.8 whiskers were studied at low temperatures. Found giant piezoresistive effect at helium temperature gives opportunity to create the supersensitive strain gages on the basis of silicon–germanium whiskers with doping concentration in the vicinity to the metal–insulator transition. The mechanical sensor operating at helium temperature and deformation range of 5 × 10–4–1.3 × 10–3 rel. un. was designed with the sensitive element Si0.2Ge0.8 whiskers doped to concentration 1 × 1018 cm−3.

Giant Resistivity Change of Transparent ZnO/Muscovite Heteroepitaxy.

The piezoresistive effect has shown a remarkable potential for mechanical sensor applications and been sought for its excellent performance. A great attention was paid to the giant piezoresistive effect and sensitivity delivered by silicon-based nanostructures. However, low thermal stability and complicated fabrication process hinder their practical applications. To overcome these issues and enhance the functionalities, we envision the substantial piezopotential in a zinc oxide (ZnO)/muscovite (mica) heteroepitaxy system based on theoretical consideration and realize it in practice. High piezoresistive effect with giant change of resistivity (-80 to 240%) and large gauge factor (>1000) are demonstrated through mechanical bending. The detailed features of heteroepitaxy, electrical transport, and strain are probed to understand the mechanism of such a giant resistivity change. In addition, a bending model is established to reveal the distribution of strain. Finally, we demonstrate a flex sensor featuring high sensitivity, optical transparency, and two-segment sensing with a great potential toward practical applications. Such an oxide heteroepitaxy exhibits excellent piezoresistive properties and mechanical flexibility. In the near future, the importance of flex sensors will emerge because of the precise control in the automation industries, and our results lead to a new design in the field of flex sensors.

Giant piezoresistive effect by optoelectronic coupling in a heterojunction

Enhancing the piezoresistive effect is crucial for improving the sensitivity of mechanical sensors. Herein, we report that the piezoresistive effect in a semiconductor heterojunction can be enormously enhanced via optoelectronic coupling. A lateral photovoltage, which is generated in the top material layer of a heterojunction under non-uniform illumination, can be coupled with an optimally tuned electric current to modulate the magnitude of the piezoresistive effect. We demonstrate a tuneable giant piezoresistive effect in a cubic silicon carbide/silicon heterojunction, resulting in an extraordinarily high gauge factor of approximately 58,000, which is the highest gauge factor reported for semiconductor-based mechanical sensors to date. This gauge factor is approximately 30,000 times greater than that of commercial metal strain gauges and more than 2,000 times greater than that of cubic silicon carbide. The phenomenon discovered can pave the way for the development of ultra-sensitive sensor technology.

Giant Negative Piezoresistive Effect in Diamond-like Carbon and Diamond-like Carbon-Based Nickel Nanocomposite Films Deposited by Reactive Magnetron Sputtering of Ni Target.

Piezoresistive properties of hydrogenated diamond-like carbon (DLC) and DLC-based nickel nanocomposite (DLC:Ni) films were studied in the range of low concentration of nickel nanoparticles. The films were deposited by reactive high power pulsed magnetron sputtering (HIPIMS) of Ni target, and some samples were deposited by direct current (dc) reactive magnetron sputtering for comparison purposes. Raman scattering spectroscopy, energy-dispersive X-ray spectrometry (EDS), and X-ray photoelectron spectroscopy (XPS) were used to study the structure and chemical composition of the films. A four-point bending test was applied to study piezoresistive properties of the films. For some samples containing less than 4 at. % Ni and for the samples containing no Ni (as defined by both EDS and XPS), a giant negative piezoresistive effect was observed. The giant negative piezoresistive effect in DLC films deposited by either reactive HIPIMS or dc magnetron sputtering of Ni target was explained by possible clustering of the sp2-bonded carbon and/or formation of areas with the decreased hydrogen content. It was suggested that the tensile stress-induced rearrangements of these conglomerations have resulted in the increased conductivity paths.

Exploitation of Giant Piezoresistivity – CNT Sensors Fabricated with a Wafer-level Technology

Here we present a holistic wafer-level approach for the fabrication of highly sensitive electromechanical transducers, using the intrinsic piezoresistive effect of enriched semiconducting single-walled carbon nanotubes (SWCNTs). Therefore membrane based demonstrators were fabricated on 150mm wafers using MEMS compatible micromachining. Carbon nanotube field-effect transistors were positioned at membrane sites with the highest strain upon pressure driven actuation. The giant piezoresistive effect of SWCNTs was proved and quantified. We derived the gauge factor to be more than 600, which is significantly higher than for common silicon strain gauges.

Experimental Investigations on New Characterization Method for Giant Piezoresistance Effect and Silicon Nanowire Piezoresistive Detection

This paper presents a novel and effective characterization method for giant piezoresistive properties of silicon nanowires by using the reference structures. This contrast detection approach investigates the influences of quantum size effect and surface defects effect on piezoresistive coefficients of silicon nanowires by direct comparison of the resistivity change ratio of silicon wires with nanoscale-to-microscale width under the same applied stress conditions. The characterization experiments based on four-point bending tensile test demonstrate that piezoresistive coefficient of small nanowidth silicon nanowire can be significantly increased to about five times higher levels than that of bulk silicon under the same impurity concentration, which indicates that the silicon nanowire can have giant piezoresistive effect. On the other hand, to solve the problem on nanowires pick-up, we proposed a nanowire piezoresistive detection approach, whose validity is confirmed by the dynamic LDV resonance test. Meanwhile, to investigate the influence of undercut arising from the wet chemical release process of the suspended silicon nanowire, a three-dimensional finite element simulation is also carried out for the fundamental resonant frequency using ANSYS software. The numerical and experimental results show that our piezoresistive detection is accurate and effective and the undercut should be carefully considered in the design of the high frequency resonator and mixer. The findings of this paper provide some useful references for the piezoresistive effect measurement and the piezoresistive pick-up in nanoelectromechanical system.

Electrostatic actuated strain engineering in monolithically integrated VLS grown silicon nanowires

In this paper we demonstrate the fabrication and application of an electrostatic actuated tensile straining test (EATEST) device enabling strain engineering in individual suspended nanowires (NWs). Contrary to previously reported approaches, this special setup guarantees the application of pure uniaxial tensile strain with no shear component of the stress while e.g. simultaneously measuring the resistance change of the NW. To demonstrate the potential of this approach we investigated the piezoresistivity of about 3 μm long and 100 nm thick SiNWs but in the same way one can think about the application of such a device on other geometries, other materials beyond Si as well as the use of other characterization techniques beyond electrical measurements. Therefore single-crystal SiNWs were monolithically integrated in a comb drive actuated MEMS device based on a silicon-on-insulator (SOI) wafer using the vapor–liquid–solid (VLS) growth technique. Strain values were verified by a precise measurement of the NW elongation with scanning electron microscopy (SEM). Further we employed confocal μ-Raman microscopy for in situ, high spatial resolution measurements of the strain in individual SiNWs during electrical characterization. A giant piezoresistive effect was observed, resulting in a fivefold increase in conductivity for 3% uniaxially strained SiNWs. As the EATEST approach can be easily integrated into an existing Si technology platform this architecture may pave the way toward a new generation of nonconventional devices by leveraging the strain degree of freedom.

Smart piezoresistive tunnelling composite for flexible robotic sensing skin

A highly mechanically flexible tactile device based on a metal–elastomer composite material was prepared by an efficient and simple process. The microcasting fabrication technique, used for the preparation of a selfstanding sheet of functional material, gives the possibility of easily fabricating complex-shaped structures suitable for integration on robot surfaces for tactile sensing applications. Under the action of a compressive stress the composite material exhibits a giant piezoresistive effect, varying its electrical resistance by several orders of magnitude. This phenomenon can be tuned by changing the material composition parameters, which directly modify the sensitivity of the sensor. After a comprehensive characterization of the functional properties of the material, an 8 × 8 pressure sensor matrix with dedicated electronics was fabricated and tested.

A Tactile Sensor Device Exploiting the Tunable Sensitivity of Copper-PDMS Piezoresistive Composite

Abstract A low cost and highly mechanically flexible 8x8 pressure matrix sensor with dedicated electronics has been fabricated with an innovative metal-elastomer composite material. Under the action of a compressive stress the material exhibits a giant piezoresistive effect varying its electrical resistance of several orders of magnitude. This phenomenon can be tuned by changing the material composition parameters, directly modifying the sensitivity of the sensor. The micro casting fabrication technique, used for the preparation of self standing sheet of functional material, gives the possibility of easily fabricating complex-shaped structure suitable for integration on robot surface for tactile sensing. The sensor has been tested with a customized electronic circuit after an exhaustive characterization of the functional properties of the material.

Giant Piezoresistive Effects in Single Grain Boundaries of Semiconducting Barium Titanate Ceramics

Extremely large piezoresistive effects with a gage factor (elastoresistance) of > 1 × 106 in single grain boundaries of thin ceramic bars of semiconducting barium titanate have been observed at room temperature. Thin barium titanate ceramic bars with a diameter in the range of 10 to 20 μm were prepared to consist of single grains joined together in series. Large piezoresistive effects were observed for some of the single grain boundaries in the present samples under compressive stresses, but no distinct piezoresistance was observed in the grain bulk. A giant piezoresistive effect with a gage factor of 3 × 107 was observed for a single grain boundary which exhibited a saw-tooth type PTCR (positive temperature coefficient of resistivity) characteristic with a significantly large bias dependence of it. This demonstrates that the piezoresistive phenomenon may be interpreted in terms of the change of the potential barrier height due to the change of ferroelectric domain morphologies in the vicinity of grain boundaries under mechanical and electric stresses.