Herein, the structural, electronic, and optical properties of Gen (n = 3–20), mixed MGe9 (M = Ga, Si, Sn, As), and GaxGe(10−x) (x = 1–10) clusters using the density-functional theory (DFT) and the time dependent-DFT (TD-DFT) were systematically investigated. The calculated values of binding energies (Eb, eV/atom), second-order differences of total energies (Δ2E), and fragmentation energies (Efrg) for pristine Gen clusters demonstrated that the pristine Ge10 and Ge20 are the most stable structure of Gen clusters. Based on first-principles calculations, the properties of studied clusters are highly dependent on their composition. The electronic properties of Gen clusters reveal that, in general, the HOMO-LUMO energy gap decreases with increasing the cluster size. SiGe9 was found to be more thermodynamically and chemically stable than its parent. On the other hand, generally, the energy gap of mixed MGe9 clusters decreased compared with the pure Ge10 cluster. The calculated H-L energy gap of GaxGe(10−x) (x = 1–10) cluster with even/odd number of Ga atom is in the range of ~ 1.567–2.194 eV/1.153–1.297 eV. Based on TD-DFT calculations, with increasing the cluster size, the maximum wavelength for Gen (n = 3–20) clusters shifted towards higher values. Due to their significant optical HOMO-LUMO energy gap and maximum wavelength, these clusters could be potentially promising candidates for optoelectronic devices.
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