Ge-Si Core-shell Nanowires Research Articles

Magnetic field enhanced critical current in Ge–Si nanowire Josephson junctions

Anomalous critical current enhancement was observed with increasing magnetic field in Josephson junctions based on Ge–Si core-shell nanowires. Despite the predicted topological properties of these nanowires, which could potentially lead to non-trivial superconducting order parameter symmetries, our investigation unveils a more generalized, non-topological explanation for the observed critical current enhancement in these devices. Our findings suggest that the enhancement arises from a thermalization process induced by the magnetic field, wherein in-gap quasiparticles are generated. These quasiparticles play a crucial role in enhancing the cooling of the device, thereby lowering the effective temperature and resulting in an increased critical current. Furthermore, we elucidate how this thermalization effect varies with device geometry and measurement configuration.

In depth characterization of Ge-Si core-shell nanowires using X-ray coherent diffraction and time resolved pump-probe spectroscopy

We report on the ultrafast vibrational response of single Ge-Si core-shell nanowires obtained by epitaxial growth and investigated by femtosecond transient reflectivity and coherent x-ray diffraction measurements. The oscillations of the sample reflectivity are correlated with the fundamental breathing mode for wires with a diameter ranging from 150 to 350 nm and compared with solutions of the Navier equation. Taking advantage of a free standing geometry, we are able to get a mechanical quality factor of higher than 80. Coupling electron microscopy and pump and probe investigations with a very high spectral resolution performed on the same wire, we demonstrate that both shell and core diameter fluctuations are revealed and quantified. X-ray coherent diffraction measurements on individual nanowires evidence changes in the Ge-core diameter and different strain states along a single structure.

Multiple Andreev reflections and Shapiro steps in a Ge-Si nanowire Josephson junction

We present a Josephson junction based on a Ge-Si core-shell nanowire with transparent superconducting Al contacts, a building block which could be of considerable interest for investigating Majorana bound states, superconducting qubits and Andreev (spin) qubits. We demonstrate the dc Josephson effect in the form of a finite supercurrent through the junction, and establish the ac Josephson effect by showing up to 23 Shapiro steps. We observe multiple Andreev reflections up to the sixth order, indicating that charges can scatter elastically many times inside our junction, and that our interfaces between superconductor and semiconductor are transparent and have low disorder.

Monolithic Axial and Radial Metal-Semiconductor Nanowire Heterostructures.

The electrical and optical properties of low-dimensional nanostructures depend critically on size and geometry and may differ distinctly from those of their bulk counterparts. In particular, ultrathin semiconducting layers as well as nanowires have already proven the feasibility to realize and study quantum size effects enabling novel ultrascaled devices. Further, plasmonic metal nanostructures attracted recently a lot of attention because of appealing near-field-mediated enhancement effects. Thus, combining metal and semiconducting constituents in quasi one-dimensional heterostructures will pave the way for ultrascaled systems and high-performance devices with exceptional electrical, optical, and plasmonic functionality. This Letter reports on the sophisticated fabrication and structural properties of axial and radial Al-Ge and Al-Si nanowire heterostructures, synthesized by a thermally induced exchange reaction of single-crystalline Ge-Si core-shell nanowires and Al pads. This enables a self-aligned metallic contact formation to Ge segments beyond lithographic limitations as well as ultrathin semiconducting layers wrapped around monocrystalline Al core nanowires. High-resolution transmission electron microscopy, energy dispersive X-ray spectroscopy, and μ-Raman measurements proved the composition and perfect crystallinity of these metal-semiconductor nanowire heterostructures. This exemplary selective replacement of Ge by Al represents a general approach for the elaboration of radial and axial metal-semiconductor heterostructures in various Ge-semiconductor heterostructures.

Josephson Effect in a Few-Hole Quantum Dot.

A Ge-Si core-shell nanowire is used to realize a Josephson field-effect transistor with highly transparent contacts to superconducting leads. By changing the electric field, access to two distinct regimes, not combined before in a single device, is gained: in the accumulation mode the device is highly transparent and the supercurrent is carried by multiple subbands, while near depletion, the supercurrent is carried by single-particle levels of a strongly coupled quantum dot operating in the few-hole regime. These results establish Ge-Si nanowires as an important platform for hybrid superconductor-semiconductor physics and Majorana fermions.

Improving electrical performance in Ge–Si core–shell nanowire transistor with a new stripped structure

A new device structure based on Ge–Si core–shell nanowire is proposed. Owing to the fact that the Si shell is stripped at the source/drain end, the density and electrostatic potential of the holes is gradually distributed in the source/drain region of the new structure, which results in a higher gradient of quasi-Fermi potential in the channel underneath the gate. We observe a higher current ratio for the on-off state and improved output characteristics in the new structure via TCAD simulation. Besides, in the proposed structure we can adjust the on-state current by changing the source/drain length for the same gate length. This provides a feasible approach to optimizing a junctionless nanowire transistor device.

Tailoring Strain and Morphology of Core-Shell SiGe Nanowires by Low-Temperature Ge Condensation.

Selective oxidation of the silicon element of silicon germanium (SiGe) alloys during thermal oxidation is a very important and technologically relevant mechanism used to fabricate a variety of microelectronic devices. We develop here a simple integrative approach involving vapor-liquid-solid (VLS) growth followed by selective oxidation steps to the construction of core-shell nanowires and higher-level ordered systems with scalable configurations. We examine the selective oxidation/condensation process under nonequilibrium conditions that gives rise to spontaneous formation of core-shell structures by germanium condensation. We contrast this strategy that uses reaction-diffusion-segregation mechanisms to produce coherently strained structures with highly configurable geometry and abrupt interfaces with growth-based processes which lead to low strained systems with nonuniform composition, three-dimensional morphology, and broad core-shell interface. We specially focus on SiGe core-shell nanowires and demonstrate that they can have up to 70% Ge-rich shell and 2% homogeneous strain with core diameter as small as 14 nm. Key elements of the building process associated with this approach are identified with regard to existing theoretical models. Moreover, starting from results of ab initio calculations, we discuss the electronic structure of these novel nanostructures as well as their wide potential for advanced device applications.

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge-Si Core-Shell Nanowires.

The ability of core–shell nanowires to overcome existing limitations of heterostructures is one of the key ingredients for the design of next generation devices. This requires a detailed understanding of the mechanism for strain relaxation in these systems in order to eliminate strain-induced defect formation and thus to boost important electronic properties such as carrier mobility. Here we demonstrate how the hole mobility of [110]-oriented Ge–Si core–shell nanowires can be substantially enhanced thanks to the realization of large band offset and coherent strain in the system, reaching values as high as 4200 cm2/(Vs) at 4 K and 1600 cm2/(Vs) at room temperature for high hole densities of 1019 cm–3. We present a direct correlation of (i) mobility, (ii) crystal direction, (iii) diameter, and (iv) coherent strain, all of which are extracted in our work for individual nanowires. Our results imply [110]-oriented Ge–Si core–shell nanowires as a promising candidate for future electronic and quantum transport devices.

Catching the electron in action in real space inside a Ge-Si core-shell nanowire transistor.

Catching the electron in action in real space inside a semiconductor Ge-Si core-shell nanowire field effect transistor (FET), which has been demonstrated (J. Xiang, W. Lu, Y. Hu, Y. Wu, H. Yan and C. M. Lieber, Nature, 2006, 441, 489) to outperform the state-of-the-art metal oxide semiconductor FET, is central to gaining unfathomable access into the origin of its functionality. Here, using a quantum transport approach that does not make any assumptions on electronic structure, charge, and potential profile of the device, we unravel the most probable tunneling pathway for electrons in a Ge-Si core-shell nanowire FET with orbital level spatial resolution, which demonstrates gate bias induced decoupling of electron transport between the core and the shell region. Our calculation yields excellent transistor characteristics as noticed in the experiment. Upon increasing the gate bias beyond a threshold value, we observe a rapid drop in drain current resulting in a gate bias driven negative differential resistance behavior and switching in the sign of trans-conductance. We attribute this anomalous behavior in drain current to the gate bias induced modification of the carrier transport pathway from the Ge core to the Si shell region of the nanowire channel. A new experiment involving a four probe junction is proposed to confirm our prediction on gate bias induced decoupling.

Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.

Anisotropic Pauli spin blockade in hole quantum dots

We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at low magnetic fields to spin-flip cotunneling, for which we measure a strong anisotropy related to an anisotropic $g$ factor. At higher magnetic fields we see signatures for leakage current caused by spin-orbit coupling between (1,1) singlet and (2,0) triplet states. Taking into account these anisotropic spin-flip mechanisms, we can choose the magnetic field direction with the longest spin lifetime for improved spin-orbit qubits.

Electric-field dependentg-factor anisotropy in Ge-Si core-shell nanowire quantum dots

We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced by local gates. Alignment of the magnetic field with the electric field reduces g* significantly. g* is almost completely quenched when the magnetic field is aligned with the nanowire axis. These findings confirm recent calculations, where the obtained anisotropy is attributed to a Rashba-type spin-orbit interaction induced by heavy-hole light-hole mixing. In principle, this facilitates manipulation of spin-orbit qubits by means of a continuous high-frequency electric field.

Length-dependent thermal transport and ballistic thermal conduction

Probing length-dependent thermal conductivity of a given material has been considered as an important experimental method to determine the length of ballistic thermal conduction, or equivalently, the averaged phonon mean free path (l). However, many previous thermal transport measurements have focused on varying the lateral dimensions of samples, rendering the experimental interpretation indirect. Moreover, deducing l is model-dependent in many optical measurement techniques. In addition, finite contact thermal resistances and variations of sample qualities are very likely to obscure the effect in practice, leading to an overestimation of l. We point out that directly investigating one-dimensional length-dependent (normalized) thermal resistance is a better experimental method to determine l. In this regard, we find that no clear experimental data strongly support ballistic thermal conduction of Si or Ge at room temperature. On the other hand, data of both homogeneously-alloyed SiGe nanowires and heterogeneously-interfaced Si-Ge core-shell nanowires provide undisputed evidence for ballistic thermal conduction over several micrometers at room temperature.

Micron-scale ballistic thermal conduction and suppressed thermal conductivity in heterogeneously interfaced nanowires

By employing three different measurement methods, we rigorously show that micron-scale ballistic thermal conduction can be found in Si-Ge heterogeneously interfaced nanowires exhibiting low thermal conductivities. The heterogeneous interfaces localize most high-frequency phonons and suppress the total thermal conductivity below that of Si or Ge. Remarkably, the suppressed thermal conductivity is accompanied with an elongation of phonon mean free paths over 5 \ensuremath{\mu}m at room temperature, which is not only more than 25 times longer than that of Si or Ge but also longer than those of the best thermal conductors like diamond or graphene. We estimate that only 0.1% of the excited phonons carry out the heat transfer process, and, unlike phonon transport in Si or Ge, the low-frequency phonons in Si-Ge core-shell nanowires are found to be insensitive to twin boundaries, defects, and local strain. The ballistic thermal conduction persisting over 5 \ensuremath{\mu}m, along with the suppressed thermal conductivity, will enable wave engineering of phonons at room temperature and inspire new improvements of thermoelectric devices.

Radial modulation doping in core–shell nanowires

Semiconductor nanowires are potential candidates for applications in quantum information processing, Josephson junctions and field-effect transistors and provide a unique test bed for low-dimensional physical phenomena. The ability to fabricate nanowire heterostructures with atomically flat, defect-free interfaces enables energy band engineering in both axial and radial directions. The design of radial, or core-shell, nanowire heterostructures relies on energy band offsets that confine charge carriers into the core region, potentially reducing scattering from charged impurities on the nanowire surface. Key to the design of such nanoscale heterostructures is a fundamental understanding of the heterointerface properties, particularly energy band offsets and strain. The charge-transfer and confinement mechanism can be used to achieve modulation doping in core-shell structures. By selectively doping the shell, which has a larger bandgap, charge carriers are donated and confined in the core, generating a quasi-one-dimensional electron system with higher mobility. Here, we demonstrate radial modulation doping in coherently strained Ge-SixGe1-x core-shell nanowires and a technique to directly measure their valence band offset. Radial modulation doping is achieved by incorporating a B-doped layer during epitaxial shell growth. In contrast to previous work showing site-selective doping in Ge-Si core-shell nanowires, we find both an enhancement in peak hole mobility compared with undoped nanowires and observe a decoupling of electron transport in the core and shell regions. This decoupling stems from the higher carrier mobility in the core than in the shell and allows a direct measurement of the valence band offset for nanowires of various shell compositions.

Gate-Modulated Thermoelectric Power Factor of Hole Gas in Ge–Si Core–Shell Nanowires

We experimentally studied the thermoelectric power factor of hole gas in individual Ge-Si core-shell nanowires with Ge core diameters ranging from 11 to 25 nm. The Ge cores are dopant-free, but the Fermi level in the cores is pinned by surface and defect states in the epitaxial Si shell thereby doping the cores into the degenerate regime. This doping mechanism avoids the high concentration of dopants usually encountered in bulk thermoelectric materials and provides a unique opportunity to enhance the carrier mobility with suppressed ionized impurity scattering. Moreover, the carrier concentration in small diameter nanowires has also been effectively modulated by field effect, allowing one to probe the electrical conductivity and thermopower within a wide range of carrier concentrations, which is crucial to understand the thermoelectric transport behavior. We found that the thermopower of nanowires with Ge core diameters down to 11 nm still follows the behavior of bulk Ge. As a result, the power factor is found to be closely correlated with the carrier mobility, which is higher than that of bulk Ge in one of the core-shell nanowires studied here.

Optical absorption modulation by selective codoping of SiGe core-shell nanowires

First-principles calculations on the structural, electronic, and optical properties of B-P codoped SiGe core-shell nanowires are discussed. We show that the simultaneous addition of B and P impurities into the wire can be energetically favored with respect to the single-doping. We demonstrate that impurities energetic levels in the band gap are dependent by the Si/Ge band offset, as well as by their location in the wire (i.e., core or shell region). This electronic tunability results in a significant optical modulation, as demonstrated by the red-shift of the first optical peak when B and P locations are switched in the wire.

Surface Disordered Ge–Si Core–Shell Nanowires as Efficient Thermoelectric Materials

Ge-Si core-shell nanowires with surface disorder are shown to be very promising candidates for thermoelectric applications. In atomistic calculations we find that surface roughness decreases the phonon thermal conductance significantly. On the contrary, the hole states are confined to the Ge core and are thereby shielded from the surface disorder, resulting in large electronic conductance values even in the presence of surface disorder. This decoupling of the electronic and phonon transport is very favorable for thermoelectric purposes, giving rise to promising room temperature figure of merits ZT > 2. It is also found that the Ge-Si core-shell wires perform better than pure Si nanowires.

Raman scattering characterization of strain in Ge–Si core–shell nanowires

Strain relaxation in Ge–Si core–shell nanowires is studied by means of Raman spectroscopy. A recently developed model of strain in these structures is extended to allow for partial strain relaxation and used to calculate the core and shell Raman spectra of the nanowires. We find that all Ge–Si core–shell nanowires studied here, with core diameters of 11 nm or higher, have partially relaxed strains. This agrees with some theoretical predictions of critical thicknesses in these structures. Our Raman data also show strong evidence for Ge–Si intermixing at the core–shell interface.

Hole spin relaxation in Ge–Si core–shell nanowire qubits

Controlling decoherence is the biggest challenge in efforts to develop quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among implementations of solid-state quantum bits, but their strong coupling to nuclear spins produces high decoherence rates. Group IV semiconductors, on the other hand, have relatively low nuclear spin densities, making them an attractive platform for spin quantum bits. However, device fabrication remains a challenge, particularly with respect to the control of materials and interfaces. Here, we demonstrate state preparation, pulsed gate control and charge-sensing spin readout of hole spins confined in a Ge-Si core-shell nanowire. With fast gating, we measure T(1) spin relaxation times of up to 0.6 ms in coupled quantum dots at zero magnetic field. Relaxation time increases as the magnetic field is reduced, which is consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.