We present a Monte Carlo analysis of the influence of the Ge profile shape in the base of SiGe HBTs on their noise performance under high injection conditions. While the base and collector spectral densities show a similar overall behavior for the different Ge profiles considered, they are lower than that in an analogous BJT. The Ge profile determines the onset of hot-carrier effects in the base, as clearly identified in both static and noise characteristics of the transistors.