Gating Efficiency Research Articles

Achieving High-Performance Polymer-Wrapper-Free Aligned Carbon Nanotube Field-Effect Transistors Through Degradable Polymer Wrapping and Efficient Removal Techniques.

Semiconducting carbon nanotubes (s-CNTs) have emerged as a promising alternative to traditional silicon for ultrascaled field-effect transistors (FETs), owing to their exceptional properties. Aligned s-CNTs (A-CNTs) are particularly favored for practical applications due to their ability to provide higher driving current and lower contact resistance compared with individual s-CNTs or random networks. Achieving high-semiconducting-purity A-CNTs typically involves conjugated polymer wrapping for selective separation of s-CNTs, followed by self-assembly techniques. However, the presence of the polymer wrapper on A-CNTs can adversely impact electrical contact, gating efficiency, carrier transport, and device-to-device variations, necessitating its complete removal. While various methods have been explored for polymer removal, accurately characterizing the extent of removal remains a challenge. Traditional techniques such as absorption spectroscopy and X-ray photoelectron spectroscopy (XPS) may not accurately depict the remaining polymer content on A-CNTs due to their inherent detection limits. Consequently, the performance of FETs based on pure polymer-wrapper-free A-CNTs is unclear. In this study, we present an approach for preparing high-semiconducting-purity and polymer-wrapper-free A-CNTs using poly[(9,9-dioctylfluorenyl-2,7-dinitrilomethine)-(9,9-dioctylfluorenyl-2,7-dimethine)] (PFO-N-PFO), a degradable polymer, in conjunction with a modified dimension-limited self-alignment process (m-DLSA). Comprehensive transmission electron microscopy (TEM) characterizations, complemented by absorption and XPS characterizations, provide robust evidence of the successful near-complete removal of the polymer wrapper via a cleaning procedure involving acidic degradation, hot solvent rinsing, and vacuum annealing. Furthermore, top-gated FETs based on these high-semiconducting-purity and polymer-wrapper-free A-CNTs exhibit good performance metrics, including an on-current (Ion) of 2.2 mA/μm, peak transconductance (gm) of 1.1 mS/μm, low contact resistance (Rc) of 191 Ω·μm, and negligible hysteresis, representing a significant advancement in the CNT-based FET technology.

Insight into the transport of ions from salts of moderated solubility through nanochannels: negative incremental resistance assisted by geometry.

In this study, the transport of salt with moderate solubility through bioinspired solid-state nanochannels was comprehensively investigated. For this purpose, bullet-shaped channels were fabricated and exposed to KClO4, a monovalent salt with moderate solubility. These channels displayed the typical rectifying behavior characteristic of asymmetrical channels but with one remarkable difference, the iontronic output exhibited a negative incremental resistance phenomenon of high gating efficiency when the transmembrane voltage in the open state was increased enough, giving rise to an inactivated state characterized by a low and stable ion current. The behavior is attributed to salt precipitation inside the channel and remarkably, it is not observed in other geometries such as cylindrical or cigar-shaped channels. Considering the central role of the surface in precipitation formation, the influence of several parameters such as electrolyte concentration, pH, and channel size was studied. Under optimized conditions, this system can alternate among three different conductance states (closed, open, and inactivated) and exhibits gating ratios higher than 20. Beyond its potential application in fields related to electronics or sensing, this study provides valuable insight into the fundamental principles behind ion rectifying behavior in solid-state channels and highlights the implications of surface phenomena at the nanoscale.

Accurate and gate-efficient quantum Ansätze for electronic states without adaptive optimization

The ability of quantum computers to overcome the exponential memory scaling of many-body problems is expected to transform quantum chemistry. Quantum algorithms require accurate representations of electronic states on a quantum device, but current approximations struggle to combine chemical accuracy and gate efficiency while preserving physical symmetries, and rely on measurement-intensive adaptive methods that tailor the wave function to each molecule. In this contribution, we present a symmetry-preserving and gate-efficient that provides chemically accurate molecular energies with a well-defined circuit structure. Our approach exploits local qubit connectivity, orbital optimization, and connections with generalized valence bond theory to maximize the accuracy that is obtained with shallow quantum circuits. Numerical simulations for molecules with weak and strong electron correlation, including benzene, water, and the singlet-triplet gap in tetramethyleneethane, demonstrate that chemically accurate energies are achieved with as much as 84% fewer two-qubit gates compared to state-of-the-art adaptive techniques. Published by the American Physical Society 2024

Noisy qudit vs multiple qubits: conditions on gate efficiency for enhancing fidelity

As qubit-based platforms face near-term technical challenges in terms of scalability, qudits, d-level bases of quantum information, are being implemented in multiple platforms as an alternative for Quantum Information Processing (QIP). We compare the infidelity scalings of single qudit and multiqubit systems within identical Hilbert space dimensions and noisy environments in the Lindblad formalism. We find them to be gate-independent to first-order and present an analytically-derived critical curve (d2−1)/3log2(d)\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$({d}^{2}-1)/3{\\log }_{2}(d)$$\\end{document} that benchmarks the operational time efficiency of qudits and qubits relative to their decoherence times. This comparison reveals conditions under which qudits offer competitive gate efficiencies compared to leading qubit platforms. Our findings, supported by numerical simulations testing the applicability and limits of the linear response formalism, highlight the relevance of qudits in near-term QIP. This provides a benchmark for evaluating qudit platforms, specifically those with lower dimensionality, in terms of their operational efficiency relative to the qubit state-of-the-art.

Qudit-based high-dimensional controlled-not gate.

High-dimensional quantum systems expand quantum channel capacity and information storage space. By implementing high-dimensional quantum logic gates, the speed of quantum computing can be practically enhanced. We propose a deterministic 4 × 4-dimensional controlled-not (CNOT) gate for a hybrid system without ancillary qudits required, where the spatial and polarization states of a single photon serve as a control qudit of four dimensions, whereas two electron-spin states in nitrogen-vacancy (NV) centers act as a four-dimensional target qudit. As the control qudits are easily operated employing simple optical elements and the target qudits are available for storage, the CNOT gate works in a deterministic way, and it can be flexibly extended to n × n-dimensional (n > 4) quantum gates for other hybrid systems or different photonic degrees of freedoms. The efficiency and fidelity of the CNOT gate are analyzed aligning with current technological capabilities, finding that they have satisfactory performances.

Small Molecule Additives to Suppress Bundling in Dimensional‐Limited Self‐Alignment Method for High‐Density Aligned Carbon Nanotube Array

AbstractSemiconducting single‐walled carbon nanotube (CNT) is a promising candidate as a channel material for advanced logic transistors, attributed to the ultra‐thin 1‐nm cylindrical geometry, high mobility, and high carrier injection velocity. However, the presence of undesired CNT bundles in the CNT arrays for wafer‐scale device fabrication, even when utilizing the state‐of‐the‐art dimension‐limited self‐alignment (DLSA) method, poses challenges. These CNT bundles degrade the transistor gate's efficiency in controlling the flow of charge carriers in the CNT channel, leading to pronounced device‐to‐device variability. Here, a novel method is introduced to alleviate bundling in CNT arrays assembled via DLSA, by involving small molecule additive to screen the attractive van der Waals force between neighboring CNTs during the DLSA process, resulting in over 50% reduction in CNT bundling. Furthermore, a pioneering methodology for quantifying CNT bundles is presented and employed experimentally to assess bundles in dense CNT arrays assembled by DLSA using transmission electron microscopy. Both experimental data and molecular dynamics simulation reveal that CNT bundling originates from van der Waals attraction between CNTs, and the disturbed liquid‐liquid interface by accumulating excess polar molecules. These findings illuminate new pathways for realizing dense, bundle‐free CNT arrays.

Self-calibrated subspace reconstruction for multidimensional MR fingerprinting for simultaneous relaxation and diffusion quantification.

To propose a new reconstruction method for multidimensional MR fingerprinting (mdMRF) to address shading artifacts caused by physiological motion-induced measurement errors without navigating or gating. The proposed method comprises two procedures: self-calibration and subspace reconstruction. The first procedure (self-calibration) applies temporally local matrix completion to reconstruct low-resolution images from a subset of under-sampled data extracted from the k-space center. The second procedure (subspace reconstruction) utilizes temporally global subspace reconstruction with pre-estimated temporal subspace from low-resolution images to reconstruct aliasing-free, high-resolution, and time-resolved images. After reconstruction, a customized outlier detection algorithm was employed to automatically detect and remove images corrupted by measurement errors. Feasibility, robustness, and scan efficiency were evaluated through in vivo human brain imaging experiments. The proposed method successfully reconstructed aliasing-free, high-resolution, and time-resolved images, where the measurement errors were accurately represented. The corrupted images were automatically and robustly detected and removed. Artifact-free T1, T2, and ADC maps were generated simultaneously. The proposed reconstruction method demonstrated robustness across different scanners, parameter settings, and subjects. A high scan efficiency of less than 20 s per slice has been achieved. The proposed reconstruction method can effectively alleviate shading artifacts caused by physiological motion-induced measurement errors. It enables simultaneous and artifact-free quantification of T1, T2, and ADC using mdMRF scans without prospective gating, with robustness and high scan efficiency.

Electrostatically-induced strain of graphene on GaN nanorods

Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod substrate affects the graphene electrode in two ways: 1) by a change of the carrier concentration in graphene and 2) by inducing strain, as demonstrated by the Raman spectroscopy. The capacitance of the investigated structures scales with the area of graphene in contact with the nanorods. Due to the reduced contact surface, the efficiency of graphene gating is one order of magnitude lower than for a comparable structure without nanorods. The shift of graphene Raman modes observed under bias clearly shows the presence of electrostatically-induced strain and only a weak modification of carrier concentration, both independent of number of graphene layers. A higher impact of bias on strain was observed for samples with a larger contact area between the graphene and the nanorods which shows perspective for the construction of sensors and nanoresonator devices.

Genetic Optimization of the Y-Shaped Photonic Crystal NOT Logic Gate

The present paper is devoted to the actual problem of photonic crystal (PhC) logic gate design. The development of components for photonic digital computing systems will provide opportunities for high-efficient information processing. The use of 2D photonic crystals is one of the most promising approaches to designing interference logic gates. Photonic crystal band gap and use of lattice defects are giving opportunities for flexible control of waveguiding light. Interference logic gates of NOT, OR, AND, and XOR types based on the Y-shaped structure are well known. However, known realizations have limited energy efficiency. Earlier, a method for minimizing energy losses at the PhC waveguide bending based on genetic optimization of the PhC waveguide topology was proposed and investigated. In this paper, the genetic algorithm for optimization of the PhC interference logic gate of the NOT type was used. Optimization of the Y-shaped topology allowed for an increase in the energy efficiency of the logic gate to 95%. A description of the developed numerical procedure as well as computer simulation results are presented. The developed procedure includes the possibility of taking into account the limitations of the technology to be used for the realization of a designed 2D PhC structure.

N-terminal region is responsible for mHv1 channel activity in MDSCs.

Voltage-gated proton channels (Hv1) are important regulators of the immunosuppressive function of myeloid-derived suppressor cells (MDSCs) in mice and have been proposed as a potential therapeutic target to alleviate dysregulated immunosuppression in tumors. However, till date, there is a lack of evidence regarding the functioning of the Hvcn1 and reports on mHv1 isoform diversity in mice and MDSCs. A computational prediction has suggested that the Hvcn1 gene may express up to six transcript variants, three of which are translated into distinct N-terminal isoforms of mHv1: mHv1.1 (269 aa), mHv1.2 (269 + 42 aa), and mHv1.3 (269 + 4 aa). To validate this prediction, we used RT-PCR on total RNA extracted from MDSCs, and the presence of all six predicted mRNA variances was confirmed. Subsequently, the open-reading frames (ORFs) encoding for mHv1 isoforms were cloned and expressed in Xenopus laevis oocytes for proton current recording using a macro-patch voltage clamp. Our findings reveal that all three isoforms are mammalian mHv1 channels, with distinct differences in their activation properties. Specifically, the longest isoform, mHv1.2, displays a right-shifted conductance-voltage (GV) curve and slower opening kinetics, compared to the mid-length isoform, mHv1.3, and the shortest canonical isoform, mHv1.1. While mHv1.3 exhibits a V0.5 similar to that of mHv1.1, mHv1.3 demonstrates significantly slower activation kinetics than mHv1.1. These results suggest that isoform gating efficiency is inversely related to the length of the N-terminal end. To further explore this, we created the truncated mHv1.2 ΔN20 construct by removing the first 20 amino acids from the N-terminus of mHv1.2. This construct displayed intermediate activation properties, with a V0.5 value lying intermediate of mHv1.1 and mHv1.2, and activation kinetics that were faster than that of mHv1.2 but slower than that of mHv1.1. Overall, these findings indicate that alternative splicing of the N-terminal exon in mRNA transcripts encoding mHv1 isoforms is a regulatory mechanism for mHv1 function within MDSCs. While MDSCs have the capability to translate multiple Hv1 isoforms with varying gating properties, the Hvcn1 gene promotes the dominant expression of mHv1.1, which exhibits the most efficient gating among all mHv1 isoforms.

Highly sensitive detection of malaria biomarker through matching channel and gate capacitance of integrated organic electrochemical transistors

Organic electrochemical transistors (OECTs) possess versatile advantages for biochemical and electrophysiological applications due to electrochemical gating and ion-to-electron conversion capability. Although OECTs have been successfully applied for biochemical sensing, the effect of relative capacitance for specific sensing events is still unclear. In the present work, we design integrated interdigitated OECTs (iOECTs) with on-plane gold gate and different channel geometries for point-of-care diagnosis of malaria using aptamer as receptor. The transconductance of the iOECTs gated with micro-size gold electrodes decreased with increasing the channel thicknesses, especially for devices with large channel areas, which is inconsistent with devices gated by typical Ag/AgCl electrodes, attributing to the limited gating efficiency of the micro-size gate electrode. The capacitance of gate electrode was heavily suppressed by receptors but increased with the incubation of targets. In addition, the integrated iOECTs with thin channels exhibited superior sensitivity for malaria detection with the detection limit as low as 3.2 aM, much lower than their thick channel counterpart and other state-of-the-art biosensors. These deviations could be caused by the high relative capacitances, with respect to the gate and channel capacitance (Cg/Cch), resulting in a high gate potential drop over the organic channel and thus entirely gating on the thin channel device. These findings provide guidance to optimize the geometry of OECT devices with on-chip integrated gates and the fabrication of miniaturized OECTs for biosensing applications.

Supramolecular Transistors with Quantum Interference Effect.

The charge transport through supramolecular junctions exhibits unique quantum interference (QI) effects, which provide an opportunity for the design of supramolecular transistors. Benefiting from the configuration dependence of QI, configuration control of the supramolecular assemblies to demonstrate the QI features is a key but challenging step. In this work, we fabricated the supramolecular transistors and investigated the charge transport through the conducting channel of the individual π-stacked thiophene/phenylene co-oligomers (TPCOs) using the electrochemically gated scanning tunneling microscope break junction technique. We controlled the configuration of the supramolecular channel and switched the QI features between the anti-resonance and resonance states of the supramolecular channels. We observed the supramolecular transistor with its on/off ratio above 103 (∼1300), a high gating efficiency of ∼165 mV/dec, a low off-state leakage current of ∼30 pA, and the channel length scaled down to <2.0 nm. Density functional theory calculations suggested that the QI features in π-stacked TPCOs vary depending on the supramolecular architecture and can be manipulated efficiently by fine-tuning the supramolecular configurations. This work reveals the potential of the supramolecular channels for molecular electronics and provides a fundamental understanding of intermolecular charge transport.

Scaling carbon nanotube field effect transistors to 30 nm channel length on pretreated PET

With the extensive application of flexible circuits to artificial intelligence (AI) and the internet of things (IoT), high requirements have been promoted for the integration and miniaturization of flexible circuits. However, the vast majority of transistors on flexible substrates reported so far have micrometer-level channel length (Lch), seriously affecting the integration abilities of flexible circuits. In this work, we explore the scaling behaviors of flexible carbon nanotube field effect transistors (CNT FETs) by fabricating p-type flexible CNT FETs with Lch varying from 2 μm to 70 nm on polyethylene terephthalate (PET) substrates. The improved width-normalized on-state current (Ion/Wch), transconductance (gm) and near-constant gate efficiency indicate that CNTs have great potential in constructing ultra-small flexible FETs. Additionally, we fabricate a CNT FET with a 30-nm channel length on a cleaned PET substrate using a self-aligned top-gate structure; this CNT FET can achieve a high on-state performance of 103 μA/μm when Vds = −0.8 V. The pitch size of the device is 230 nm, which is the smallest size of flexible transistors so far. Even with deep submicron and nanometer channel lengths, the yields of flexible CNT FETs can reach 60% (33/56); which is benefiting from the pretreated substrate, demonstrating the potential for large-scale production.

Improved RFET Performance Using Dual-Aluminum-Contact (DAC)

The reconfigurable field effect transistors (RFET) enable the integration of MOS-type transistors (N-type and P-type) in a single device. The programming gate voltage (VPG) controls the transistor type [1]. A greater area efficiency in logic circuits can be obtained, due to the possible different logic operation, such as NAND to NOR in a single circuit [2 - 3]. Others application include the use of RFET in circuits for security reason in order to avoid the reverse engineering [4]. Figure 1 (A) and (B) show a special type of RFET called BESOI MOSFET that will be one of the devices used in this work.Many conventional RFETs contain NiSi source/drain (S/D) contacts, or other contacts with mid-gap S/D material, providing a symmetrical current between holes and electrons. However such contacts decrease injection of current [5 - 7]. Devices based on dual-doping (DD), provided a significant improvement in the current level, in addition to the ease fabrication due to the absence of the silicidation process, such technology cannot act in doping-free CMOS processes [6] [8]. Figure 2 shows the drain current as a function of the control gate voltage (IDS -VCG) for the BESOI MOSFET.This work presents a new proposal for a dual-contact S/D (DC) RFET, without the presence of DD regions and doping process, enabling dopants-free CMOS processes, using only S/D aluminum contacts, performed through Sentaurus TCAD simulations [9].Recently in the Integrable Systems Laboratory of the University of São Paulo (LSI-USP), two RFET with aluminum S/D contacts were reported. Both presented a high current for only one type of carrier (holes or electrons) [10 - 13]. The BESOI MOSFET conducts current through its back interface, where the channel between S/D contacts is formed by the bias of the programming gate (VPG), thus its operating mode is divided into P-type (VPG < 0 ) and N-type (VPG > 0). The transistor drain current is controlled by control gate voltage (VCG) [5] [10 - 11].The Figure 3 shows the drain current balanced as a function of the control gate voltage (ID -VCG), for aluminum BESOI MOSFET’s with and without annealing process (W/A, Wo/A) after the metal deposition [10 - 11]. Using both BE SOI MOSFET with S/D aluminum contact, without process doping, a new RFET Dual Aluminum Contact (DAC) is shown Figure 4.The challenge the design is to flow of current (holes) through the outer contact (W/A contact), due to the influence of the inner schottky low-barrier aluminum contact (Wo/A contact) near to the back interface. Figure 5 shows the carrier density as a function of the depth of the silicon under the inner contact, for different silicon thicknesses (tSi) and fixed programming gate voltage (VPG). The high concentration of electrons near to the inner contact, provided an ohmic contact for electrons [11], however near the back interface, an increasing concentration of holes, due to VPG. Increasing the tSi reduces the influence of charges near the back interface, for tSi=30nm the current flow between the outer contact is possible. However, increasing the tSi decreases the efficiency of the control gate, added to the high electric field in back interface increases IOFF (similar effect described for FD SOI [14]). The Figure 6 shows the drain current as a function of the control gate voltage of BESOI nMOSFET with tSi = 30nm. Such effect can be mitigated, optimizing the coupling the gates. Figure 7 shows the final proposal of the BESOI MOSFET DAC.Figure 8 shows the IDS-VCG for different thicknesses in the S/D contacts (tsi cont). As shown in Figure 5, a greater thickness in the contacts makes possible a smaller influence of the inner contact near the back interface, allowing greater concentrations of gaps, so consequently there is an increase in the p-mode current. However, increasing the thickness of the contacts promotes a reduction in the electron current, due to the increase in the series resistance in inner contact in n-mode.Figure 9 presents the ID-VCG for different VPG bias for the DAC BESOI MOSFET (A) and NiSi BESOI MOSFET (B). Using the DAC BESOI MOSFET, an increase in current was obtained in relation to the NiSi contact (900% in n-type and 300% in p-type), without the addition of doping regions (dual-doping) and using a single contact metal (Aluminum). Figure 1

Scalable integration of hybrid high-κ dielectric materials on two-dimensional semiconductors.

Two-dimensional (2D) semiconductors are promising channel materials for next-generation field-effect transistors (FETs). However, it remains challenging to integrate ultrathin and uniform high-κ dielectrics on 2D semiconductors to fabricate FETs with large gate capacitance. We report a versatile two-step approach to integrating high-quality dielectric film with sub-1 nm equivalent oxide thickness (EOT) on 2D semiconductors. Inorganic molecular crystal Sb2O3 is homogeneously deposited on 2D semiconductors as a buffer layer, which forms a high-quality oxide-to-semiconductor interface and offers a highly hydrophilic surface, enabling the integration of high-κ dielectrics via atomic layer deposition. Using this approach, we can fabricate monolayer molybdenum disulfide-based FETs with the thinnest EOT (0.67 nm). The transistors exhibit an on/off ratio of over 106 using an ultra-low operating voltage of 0.4 V, achieving unprecedently high gating efficiency. Our results may pave the way for the application of 2D materials in low-power ultrascaling electronics.

Improvement of indoor air quality using a smart gate that can lessen viral aerosol (MS2 virus) and particulate matter (PM): Experimental findings

Fine particulate matter (PM) and viruses have more detrimental impacts on human health when present in an indoor setting than when present in an outdoor environment. With the COVID-19 epidemic, a healthy indoor environment has emerged as a crucial necessity. There are many different cleaning technologies available, but most of them have drawbacks and are challenging to utilize in daily-use indoor venues including workplaces, retail malls, movie theaters, subway stations, and many other locations. We created a portable, smart gate that is simple to use at a commercial level and evaluated it for effectiveness in lowering particulate matter concentrations of various sizes. The results show that 97.76% for PM10, 97.72%PM4, 97.44% for PM2.5, and 96.91% for PM1. reduction. Also, the aerosolized MS2 virus was used to test its ability to decrease viral transmission and the viral reduction efficiency of the smart gate was found around 82%. The experimental results show that the smart gate is better than all the current available cleaning technologies along with its user-friendly and easy use.

The Overshot Gate as a Flow-Measuring Device

The overshot gate is a commonly used adjustable overflow weir for regulating the upstream water level in open channels. The amount of gate movement is proportional to the water level change. However, to effectively manage the water flow, it is also important for operators to accurately measure the flow rate in the channel. This study examines an overshot gate installed at the end of a laboratory flume to estimate the flow rate under various free flow conditions. This study investigates different gate angles ranging from 9.6° to 90° to evaluate their impact on the flow properties and the discharge coefficient. The analysis of the results indicates that the maximum flow rate values can be achieved with gate inclinations from 15.5° to 47.2° with relatively lower head; the inclined alignment of the gate decreases the effective gate height which consequently increases the gate efficiency. The use of the overshot gate is advantageous over the normal gate when channel depth is limited and higher discharge is required at relatively lower head. In this study, at the highest gate inclinations, the water surface is significantly stable having the lowest values of the approach Froude number. In addition, the head to gate height ratio decreases with raising the gate due to the reduced vertical contraction of the channel. Finally, this paper proposes an empirical equation for estimating the discharge coefficient based on the gate inclination, which demonstrates good accuracy in the specified range.

Electrostatic Gating of Monolayer Graphene by Concentrated Aqueous Electrolytes.

Electrostatic gating using electrolytes is a powerful approach for controlling the electronic properties of atomically thin two-dimensional materials such as graphene. However, the role of the ionic type, size, and concentration and the resulting gating efficiency is unclear due to the complex interplay of electrochemical processes and charge doping. Understanding these relationships facilitates the successful design of electrolyte gates and supercapacitors. To that end, we employ in situ Raman microspectroscopy combined with electrostatic gating using various concentrated aqueous electrolytes. We show that while the ionic type and concentration alter the initial doping state of graphene, they have no measurable influence over the rate of the doping of graphene with applied voltage in the high ionic strength limit of 3-15 M. Crucially, unlike for conventional dielectric gates, a large proportion of the applied voltage contributes to the Fermi level shift of graphene in concentrated electrolytes. We provide a practical overview of the doping efficiency for different gating systems.

A stochastic control approach to intrafraction motion management in intensity-modulated radiotherapy

Objective. The goal of this research is to demonstrate proof-of-principle for managing intrafraction motion via feedback control of delivered dose to achieve dosimetry comparable to respiratory gating without compromising delivery efficiency. Approach. We develop a stochastic control approach for step-and-shoot intensity-modulated radiotherapy (IMRT) in which the cumulative delivered dose and future trajectory of intrafraction motion are dynamically estimated by combining pre-treatment four-dimensional computed tomography imaging and intrafraction respiratory-motion surrogates. The IMRT plan is then re-optimized in real time to ensure delivery of the planned dose in the presence of free-breathing motion. We compare the performance of the proposed approach against traditional motion-management techniques, namely, respiratory gating and internal target volume (ITV) planning, using the four-dimensional extended cardiac-torso computational phantom. Main results. We simulate the delivery of treatment plans for a lung tumor in the presence of variable breathing amplitude, tumor size, and location. Results show that the proposed method reduces irradiated tissue volume compared to ITV treatment. Additionally, it significantly reduces treatment time compared to traditional respiratory-gated treatment, without compromising the dosimetric quality. Significance. Respiratory gating is a common technique to manage intrafraction motion. While gating supports reduced treatment volumes, it also prolongs the treatment delivery time. The proposed stochastic control approach can help improve the delivery efficiency of respiratory gating without compromising the dose quality.

Single-electron transport in H2O@C60 single-molecule transistors

Single-molecule transistors (SMTs) based on fullerenes and their derivatives have been recognized as a long-sought platform for studying the single-electron transport properties. H2O@C60 is a combination of fullerene and H2O, a typical light molecule. Here we use the ‘molecular surgery’ technique to synthesize the H2O@C60 molecule and then construct the H2O@C60 SMTs, together with the C60 SMTs. Evidences for single-electron transport have been obtained in our measurements, including explicit Coulomb blockade and Coulomb oscillations. We then calculate the detailed parameters of the H2O@C60 and C60 SMTs using a capacitance model derived from the Coulomb diamond feature, which gives a capacitance ratio of 1:5.05:8.52 for the H2O@C60 SMT and 1:29.5:74.8 for the C60 SMT. Moreover, the gate efficiency factor α turns out to be 0.0686 in the H2O@C60 SMT, about ten times larger than that in the C60 SMT. We propose that the enhanced gate efficiency in H2O@C60 SMT may be induced by the closer attachment of molecular orbital electron clouds to the gate substrate due to polarization effects of H2O.