Gate-defined Double Quantum Dot Research Articles

Vertical gate-defined double quantum dot in a strained germanium double quantum well

Vertical gate-defined double quantum dot in a strained germanium double quantum well

A vertical gate-defined double quantum dot in a strained germanium double quantum well

A vertical gate-defined double quantum dot in a strained germanium double quantum well

Collective Microwave Response for Multiple Gate-Defined Double Quantum Dots.

We fabricate and characterize a hybrid quantum device that consists of five gate-defined double quantum dots (DQDs) and a high-impedance NbTiN transmission resonator. The controllable interactions between DQDs and the resonator are spectroscopically explored by measuring the microwave transmission through the resonator in the detuning parameter space. Utilizing the high tunability of the system parameters and the high cooperativity (Ctotal > 17.6) interaction between the qubit ensemble and the resonator, we tune the charge-photon coupling and observe the collective microwave response changing from linear to nonlinear. Our results present the maximum number of DQDs coupled to a resonator and manifest a potential platform for scaling up qubits and studying collective quantum effects in semiconductor-superconductor hybrid cavity quantum electrodynamics systems.

Full Tunability and Quantum Coherent Dynamics of a Driven Multilevel System

Tunability of an artificial quantum system is crucial to its capability to process quantum information. However, tunability usually poses significant demand on the design and fabrication of a device. In this work, we demonstrate that Floquet engineering based on longitudinal driving provides distinct possibilities in enhancing the tunability of a quantum system without needing additional resources. In particular, we study a multilevel model based on gate-defined double quantum dots, where coherent interference occurs when the system is driven longitudinally. We develop an effective model to describe the driven dynamics of this multilevel system, and show that it is highly tunable via the driving field. We then illustrate the versatility and rich physics of a driven multilevel system by exploring phenomena such as driving modulation of resonances, adiabatic state transfer, and dark state. In the context of qubit control, we propose noise-resistant quantum gates based on adiabatic passage. The theoretical consideration we present here is rather general, and is in principle valid for other multilevel quantum systems.

State initialization of a hot spin qubit in a double quantum dot by measurement-based quantum feedback control

A measurement-based quantum feedback protocol is developed for spin-state initialization in a gate-defined double quantum dot spin qubit coupled to a superconducting cavity. The protocol improves qubit state initialization as it is able to robustly prepare the spin in shorter time and reach a higher fidelity, which can be preset. Being able to preset the fidelity aimed at is a highly desired feature enabling qubit initialization to be more deterministic. The protocol developed herein is also effective at high temperatures, which is critical for the current efforts toward scaling up the number of qubits in quantum computers.

Valley Two-Qubit System in a MoS2 -Monolayer Gated Double Quantum dot

We explore a two-qubit system defined on valley isospins of two electrons confined in a gate-defined double quantum dot created within a MoS$_2$ monolayer flake. We show how to initialize, control, interact and read out such valley qubits only by electrical means using voltages applied to the local planar gates, which are layered on the top of the flake. By demonstrating the two-qubit exchange or readout via the Pauli blockade, we prove that valley qubits in transition-metal-dichalcogenide semiconductors family fulfill the universality criteria and represent a scalable quantum computing platform. Our numerical experiments are based on the tight-binding model for a MoS$_2$ monolayer, which gives single-electron eigenstates that are then used to construct a basis of Slater-determinants for the two-electron configuration space. We express screened electron-electron interactions in this basis by calculating the Coulomb matrix elements using localized Slater-type orbitals. Then we solve the time-dependent Schr\"odinger equation and obtain an exact time-evolution of the two-electron system. During the evolution we simultaneously solve the Poison equation, finding the confinement potential controlled via voltages applied to the gates.

Measurement of Backaction from Electron Spins in a Gate-Defined GaAs Double Quantum dot Coupled to a Mesoscopic Nuclear Spin Bath.

Decoherence of a quantum system arising from its interaction with an environment is a key concept for understanding the transition between the quantum and classical world as well as performance limitations in quantum technology applications. The effects of large, weakly coupled environments are often described as a classical, fluctuating field whose dynamics is unaffected by the qubit, whereas a fully quantum description still implies some backaction from the qubit on the environment. Here we show direct experimental evidence for such a backaction for an electron-spin qubit in a GaAs quantum dot coupled to a mesoscopic environment of order 10^{6} nuclear spins. By means of a correlation measurement technique, we detect the backaction of a single qubit-environment interaction whose duration is comparable to the qubit's coherence time, even in such a large system. We repeatedly let the qubit interact with the spin bath and measure its state. Between such cycles, the qubit is reinitialized to different states. The correlations of the measurement outcomes are strongly affected by the intermediate qubit state, which reveals the action of a single electron spin on the nuclear spins.

Sensitive radiofrequency readout of quantum dots using an ultra-low-noise SQUID amplifier

Fault-tolerant spin-based quantum computers will require fast and accurate qubit read out. This can be achieved using radiofrequency reflectometry given sufficient sensitivity to the change in quantum capacitance associated with the qubit states. Here, we demonstrate a 23-fold improvement in capacitance sensitivity by supplementing a cryogenic semiconductor amplifier with a SQUID preamplifier. The SQUID amplifier operates at a frequency near 200 MHz and achieves a noise temperature below 600 mK when integrated into a reflectometry circuit, which is within a factor 120 of the quantum limit. It enables a record sensitivity to capacitance of 0.07aF/Hz. The setup is used to acquire charge stability diagrams of a gate-defined double quantum dot in a short time with a signal-to-noise ration of about 38 in 1μs of integration time.

Strong coupling of hybrid system between semiconductor quantum dots and superconducting resonator

<p indent=0mm>Quantum computing is a powerful way of improving computing efficiency. For some specific problems, quantum processor can exponentially reduce computation time compared to the classical computer. Cavity quantum electrodynamics, which studies the coherent interaction between photons in an optical cavity and atoms or other two-level systems, is of enormous significance to quantum computing and quantum information processing. The strong coupling regime where a cavity photon mode and an atom exchange a single quantum energy coherently has attracted extensive interest in varied experimental platforms and systems such as alkali atoms, Rydberg atoms, large spin ensembles, magnons, etc. The semiconductor gate-defined double quantum dot (DQD) system is one of the most promising platforms that possesses advantages of advanced micro-nano processing technology and outstanding scalability. Introducing the concept of cavity QED into superconducting circuits (circuit QED, cQED), provides an opportunity to study interaction between electrons confined in semiconductor DQD and photons trapped in a superconducting resonator. Reaching strong coupling regime in this hybrid system paves the way to large-scale network of quantum computing. Electrons confined in DQD have large electrical dipoles, thus are able to couple to photons with relatively large coupling rate. Whereas, due to the charge noise and other dissipation channels in the hybrid system, the decoherence rate of the system is larger than the coupling rate, leaving the strong coupling a great challenge. In recent years, different methods have been proposed to access the strong coupling regime. Taking advantage of a high-quality heterojunction structure, an overlapping gate architecture and a low-pass LC filter on the DC bias line, the decoherence of the charge qubit and microwave leakage of the resonator can be effectively suppressed. The coupling strength of the hybrid system can be improved utilizing a high impedance resonator which is comprised of high kinetic inductance materials. Spin, which does not interact directly with the electric field, is insensitive to charge noise and has much longer decoherence time than charge qubit. However, the weak interaction results in a small coupling rate between the spin and the photon. To solve this problem, the method of coherent hybridization between the spin and the charge state is proposed to improve the coupling strength. This hybridization can be achieved by applying a non-uniform magnetic field, utilizing spin-orbit interaction or spin exchange interaction. At present, both charge qubits and spin qubits have achieved strong coupling with the cavity and the coupling distance between long-range qubits is greatly expanded as long as millimeters. This review introduces basic ideas about cQED and fundamental elements in semiconductor cQED systems. Recent progress in strong coupling hybrid system and methods for improving coupling structures are discussed. In future research, more efforts will be devoted into long-range transfer of qubit states and photon-mediated two or multi-qubit gates.

Automated tuning of inter-dot tunnel coupling in double quantum dots

Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in gate-defined semiconductor double quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation.

Strong Coupling Cavity QED with Gate-Defined Double Quantum Dots Enabled by a High Impedance Resonator

The strong coupling limit of cavity quantum electrodynamics (QED) implies the capability of a matter-like quantum system to coherently transform an individual excitation into a single photon within a resonant structure. This not only enables essential processes required for quantum information processing but also allows for fundamental studies of matter-light interaction. In this work we demonstrate strong coupling between the charge degree of freedom in a gate-detuned GaAs double quantum dot (DQD) and a frequency-tunable high impedance resonator realized using an array of superconducting quantum interference devices (SQUIDs). In the resonant regime, we resolve the vacuum Rabi mode splitting of size $2g/2\pi = 238$ MHz at a resonator linewidth $\kappa/2\pi = 12$ MHz and a DQD charge qubit dephasing rate of $\gamma_2/2\pi = 80$ MHz extracted independently from microwave spectroscopy in the dispersive regime. Our measurements indicate a viable path towards using circuit based cavity QED for quantum information processing in semiconductor nano-structures.

Anisotropic Pauli Spin Blockade of Holes in a GaAs Double Quantum Dot.

Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the weak hyperfine interaction and strong spin-orbit interaction. However, it has only recently become possible to make stable quantum dots in these systems, mainly due to difficulties in device fabrication and stability. Here, we present electrical transport measurements on holes in a gate-defined double quantum dot in a GaAs/AlxGa1-xAs heterostructure. We observe clear Pauli spin blockade and demonstrate that the lifting of this spin blockade by an external magnetic field is highly anisotropic. Numerical calculations of heavy-hole transport through a double quantum dot in the presence of strong spin-orbit coupling show quantitative agreement with experimental results and suggest that the observed anisotropy can be explained by both the anisotropic effective hole g-factor and the surface Dresselhaus spin-orbit interaction.

Anisotropic Pauli spin blockade in hole quantum dots

We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at low magnetic fields to spin-flip cotunneling, for which we measure a strong anisotropy related to an anisotropic $g$ factor. At higher magnetic fields we see signatures for leakage current caused by spin-orbit coupling between (1,1) singlet and (2,0) triplet states. Taking into account these anisotropic spin-flip mechanisms, we can choose the magnetic field direction with the longest spin lifetime for improved spin-orbit qubits.

Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane

We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, mosaic tilt, and threading dislocations. The use of a SiGe nanomembrane as the virtual substrate enables the strain relaxation to be entirely elastic, eliminating the need for misfit dislocations. However, in this approach the formation of the heterostructure is more complicated, involving two separate epitaxial growth procedures separated by a wet-transfer process that results in a buried non-epitaxial interface 625 nm from the quantum dot. We demonstrate that in spite of this buried interface in close proximity to the device, a double quantum dot can be formed that is controllable enough to enable tuning of the inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of an applied magnetic field.

Two-qubit pulse gate for the three-electron double quantum dot qubit

The three-electron configuration of gate-defined double quantum dots encodes a promising qubit for quantum information processing. I propose a two-qubit entangling gate using a pulse-gated manipulation procedure. The requirements for high-fidelity entangling operations are equivalent to the requirements for the pulse-gated single-qubit manipulations that have been successfully realized for Si QDs. This two-qubit gate completes the universal set of all-pulse-gated operations for the three-electron double-dot qubit and paves the way for a scalable setup to achieve quantum computation.

Spin-flip phonon-mediated charge relaxation in double quantum dots

We theoretically study the $(1,1)$ triplet to $(0,2)$ singlet relaxation rate in a lateral gate-defined double quantum dot tuned to the regime of Pauli spin blockade. We present a detailed derivation of the effective phonon density of states for this specific charge transition, keeping track of the contribution from piezoelectric as well as deformation potential electron-phonon coupling. We further investigate two different spin-mixing mechanisms which can couple the triplet and singlet states: a magnetic field gradient over the double dot (relevant at low external magnetic field) and spin-orbit interaction (relevant at high field), and we also indicate how the two processes could interfere at intermediate magnetic field. Finally, we show how to combine all results and evaluate the relaxation rate for realistic system parameters.

Quantized charge pumping through a carbon nanotube double quantum dot

We demonstrate single-electron pumping in a gate-defined carbon nanotube double quantum dot. By periodic modulation of the potentials of the two quantum dots, we move the system around charge triple points and transport exactly one electron or hole per cycle. We investigate the pumping as a function of the modulation frequency and amplitude and observe good current quantization up to frequencies of 18 MHz where rectification effects cause the mechanism to break down.

Electrically controlled quantum gates for two-spin qubits in two double quantum dots

Exchange-coupled singlet-triplet spin qubits in two gate-defined double quantum dots are considered theoretically. Using charge density operators to describe the double-dot orbital states, we calculate the Coulomb couplings between the qubits and identify optimal bias points for single- and two-qubit operations, as well as convenient idle positions. The same intuitive formulation is used to derive dephasing rates of these qubits due to the fluctuating charge environment, thereby providing the main considerations for a quantum computation architecture that is within current experimental capabilities.

Exchange Control of Nuclear Spin Diffusion in a Double Quantum Dot

The influence of gate-controlled two-electron exchange on the relaxation of nuclear polarization in small ensembles (N∼10(6)) of nuclear spins is examined in a GaAs double quantum dot system. Waiting in the (2,0) charge configuration, which has large exchange splitting, reduces the nuclear diffusion rate compared to that of the (1,1) configuration. Matching exchange to Zeeman splitting significantly increases the nuclear diffusion rate.