Submicroscopic faceting occurs when any Cu surface is heated in H2 or N2, favoring, according to oxidation rate data, the (111) and (100) faces, respectively. The subsequent thin film oxidation rate in O2, 1 atm at 200°C, is determined by the rearranged surface rather than by the original orientation of the underlying single crystal. This accounts for an observed large effect of gaseous pretreatment on oxidation of single‐crystal or polycrystalline Cu, and suggests one important reason for typical lack of agreement between previously reported thin film oxidation rates of many metals. Electropolished or faceted single‐crystal Cu of original (100), (110), or (111) orientation follows the two‐stage logarithmic oxidation equation. The present data are interpreted in terms of a model based on control of thin film oxidation rates by transfer of electrons from metal to oxide surface.
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