Abstract In this paper, a junction-free charge plasma tunnel field-effect transistor (JF-CP-TFET) is proposed and analyzed for the first time to sense hydrogen (H2) gas. Using junction-free and charge-plasma approaches, the proposed JF-CP-TFET-based sensor minimizes random dopant fluctuations, a large thermal budget requirement, and complex processes in the semiconductor sensor production process. The sensing performance of the JF-CP-TFET-based gas sensor is demonstrated by analyzing changes in the work function of the gate of palladium (Pd) catalytic metals, which are proportional to the pressure of H2 gas exposed at the metal gate surface. The presence of H2 gas has been demonstrated by variations of the DC/AC parameters of the proposed sensor, such as carrier concentration, energy band, electric field, transfer characteristics, threshold voltage (VTh), and subthreshold swing (SS). The sensitivity of the JF-CP-TFET-based sensor has been evaluated in terms of drain current (IDS), ION/IOFF ratio, VTh, and SS change in the presence and absence of H2 gas molecules. The sensing capabilities of the proposed JF-CP-TFET-based gas sensor demonstrate that it could potentially be employed for H2 gas detection with excellent sensitivity and reliability.
Read full abstract