GaN Semiconductor Research Articles

An investigation on the thermo-hydraulic and electrochemical performance of a novel vanadium-based embedded cooling system for synergistic energy supply and heat dissipation

Miniaturization and integration of electronics require advanced heat dissipation techniques and efficient power interconnections. Integrating energy supply and heat dissipation into one fluidic network presents a viable approach to support compact, highly integrated chip designs. This study introduces an innovative microfluidic system that utilizes embedded cooling with vanadium electrolytes, enabling synergistic near-junction thermal management and power generation. The thermo-hydraulic and electrochemical performance of the system was evaluated under various conditions and subsequently applied to a real GaN chip. Results indicated that the system effectively dissipated a heat flux up to 317.06 W/cm2 at a flow rate of 15 mL/min and an inlet temperature of 20 °C. When the flow rate was 2 mL/min, the system’s COP reached 113368. After heat absorption by the coolant, the system’s output power increased by 11.74 % with the temperature rise. High-temperature coolant enhanced ion transport and electrochemical kinetics, demonstrating the system’s potential for waste heat recovery. Upon integration with the GaN semiconductor, the system achieved power supply via waste heat recovery, reducing the hot spot temperature by 70.18 % and increasing the output current signal by 4.75 % compared to the thermally insulated devices.

Hybrid multiscale computational approach for heat transfer in GaN semiconductors

Abstract With ongoing advancements in semiconductor technology, understanding thermal transport in semiconductor devices—where phonons are the primary charge carriers—is crucial. This involves a multiscale process in which phenomena at different scales are governed by distinct control equations, necessitating various numerical methods. In this context, this paper introduces a novel multiscale simulation method called the Second-Order Reconstruction Operator Finite Difference Lattice Boltzmann Method (ROsFDLBM). This method effectively combines the Lattice Boltzmann Method (LBM) with the Finite Difference Method (FDM). ROsFDLBM employs reconstruction operators to accurately map the relationship between distribution functions and macroscopic physical quantities, significantly reducing errors caused by the transmission of interface information. The efficacy of this coupling scheme has been confirmed through an interface-coupled thermal diffusion model. Comparative analyses have revealed that the relative error of ROsFDLBM does not exceed 1.2%, demonstrating its superior accuracy. Further simulations of GaN devices have confirmed that traditional macroscopic methods tend to underestimate the temperature in the heat source area at micro-nano scales, with discrepancies reaching up to 60.9 K. Overall, the ROsFDLBM aligns with current research findings and offers an accurate and efficient simulation strategy for addressing complex heat transfer problems.

Dislocation evolution in anisotropic deformation of GaN under nanoindentation

The exceptional performance of GaN semiconductors in lasers, wireless communication, and energy storage systems makes them crucial for future multi-functional devices. However, during the polishing of GaN wafers, abrasive particles can induce subsurface damage, compromising device performance. This study investigates dislocation loops in GaN single crystal to understand dislocation nucleation and glide under external stress. Using nanoindentation for compressive stress, we confirmed multiple slip system activation via transmission electron microscopy after pop-in. We also performed molecular dynamics to simulate the nucleation and multiplication of U-shaped dislocation loops. Furthermore, we developed a theoretical model using Peierls–Nabarro stress to quantify GaN's critical shear stress. Raman spectroscopy was also used to analyze shear stress on U-shaped loops, supporting our model. This study provides insights into GaN dislocation dynamics under mechanical stress, aiding in wafer defect evaluation during machining and offering guidance for dislocation evolution.

Ferroelectric AlBN films by molecular beam epitaxy

We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode, Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr∼15μC/cm2 and coercive field Ec∼ 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices.

Tunability of the electronic structure of GaN third generation semiconductor for enhanced band gap: The influence of B concentration

To meet the demand of the future high energy, high voltage, high frequency, high temperature and high power electronic devices, the improvement of wide band gap is very significance for the applications of the third generation semiconductor material. To improve the band gap of GaN, the influence of B-doped concentration on the electronic and optical properties of GaN semiconductor is studied by the first-principles method. Four B-doped concentrations (3.125 at%, 6.25 at%, 12.5 at% and 25 at %) are investigated. The calculated results show that these B-doped GaN are thermodynamic stability because of the negative doped formation energy. In particular, the thermodynamic stability of the B-doped GaN becomes better with increasing B concentration. Importantly, the band gap follows the order of 25 at% B-doping > 12.5 at% B-doping > 6.25 at% B-doping > 3.125 at% B-doping > GaN. The band gap of 25 at% B-doped GaN increases about 70 % compared to GaN. Essentially, the B-doping induces the conduction band to move from the EF to the high energy region, which enhances the difficult of electronic transfer between the valence band and conduction band near the Fermi level. The semiconductor properties of the B-doped GaN are demonstrated by the dielectric functional. In addition, the B-doping is beneficial to improve the storage optical properties of GaN. Therefore, we believe that the B-doping can improve band gap and optical properties of GaN, which is potentially used in the high power, high voltage, low loss devices and deep ultraviolet optoelectronics.

Characterization of the p-NiO/n-GaN heterojunction and development of ultraviolet photodiode

Nickel oxide semiconductor is a good p-type material for fabricating a p-n-heterojunction with n-type GaN semiconductor. The p-NiO/n-GaN heterojunction, which produces a type II band bias, has significant prospects for creating photosensitive devices. Herein, it is shown that a selective ultraviolet photodetector can be created based on this heterojunction. p-NiO films were formed using magnetron sputtering onto n-doped GaN epitaxial layers grown by plasma assisted molecular beam epitaxy. The structural, optical, and electronic properties of the formed nickel oxide films were studied. A mechanism for reducing dislocation density and conductivity and increasing transparency due to film annealing is proposed. It has been established that the current–voltage characteristics of the p-NiO/n-GaN heterojunction are typical for diode structures and show selective sensitivity to ultraviolet radiation. The band model and sensitivity of the fabricated ultraviolet photodiode were evaluated. The photosensitivity at zero voltage was 3.11 mA/W, the quantum yield was 0.011, and the detection ability was 8.69 × 109 Jones. The work shows the potential of using the p-NiO/n-GaN heterojunction to create ultraviolet photodetectors.

High-efficient spin injection in GaN through a lattice-matched tunnel layer

Semiconductor spintronics has brought about revolutionary application prospects in future electronic devices. The tunnel junction plays a key role in achieving efficient spin injection in semiconductors. This work employed the GaN semiconductor as a room-temperature spin injection system, taking advantage of its weak spin–orbit coupling and spin scattering. By introducing a lattice-matched AlN barrier layer to improve the tunneling interface, advanced spin injection and transport were realized compared with traditional oxide barriers. The spin polarization was further improved by modulating the applied bias, and a bias-controlled tunneling enhancement mechanism was revealed. Consequently, we demonstrated a high record of spin polarization of 20.5%. This work paves a feasible route for achieving efficient spin injection and transport in GaN, which will further promote the development of room-temperature and high-performance spintronic devices.

Identification of Elastoplastic Constitutive Model of GaN Thin Films Using Instrumented Nanoindentation and Machine Learning Technique

This study presents a novel inverse identification approach to determine the elastoplastic parameters of a 2 µm thick GaN semiconductor thin film deposited on a sapphire substrate. This approach combines instrumented nanoindentation with finite element (FE) simulations and an artificial neural network (ANN) model. Experimental load–depth curves were obtained using a Berkovich indenter. To generate a comprehensive database for the inverse analysis, FE models were constructed to simulate load–depth responses across a wide range of GaN thin film properties. The accuracy of both 2D and 3D simulations was compared to select the optimal model for database generation. The Box–Behnken design-based data sampling method was used to define the number of simulations and input variables for the FE models. The ANN technique was then employed to establish the complex mapping between the simulated load–depth curves (input) and the corresponding stress–strain curve (output). The generated database was used to train and test the ANN model. Then, the learned ANN model was used to achieve high accuracy in identifying the stress–strain curve of the GaN thin film from the experimental load–depth data. This work demonstrates the successful application of an inverse analysis framework, combining experimental nanoindentation tests, FE modeling, and an ANN model, for the characterization of the elastoplastic behavior of GaN thin films.

Optimizing electrical and thermal performance in AlGaN/GaN HEMT devices using dual‐metal gate technology

AbstractThe investigation of aluminum gallium nitride/gallium nitride high electron mobility transistor (AlGaN/GaN HEMT) devices with a dual‐metal gate (DMG) structure encompasses both electrical and thermal characteristics. As efforts to enhance heat dissipation progress, there is a concurrent exploration of novel semiconductor materials boasting high thermal conductivity, like boron arsenide and phosphide. Combining these materials into a model and measuring their interface achieves efficient energy transport. Minimizing the self‐heating impact in AlGaN/GaN HEMTs is essential for enhancing device efficiency. This research exposes the heterogenous combination of boron arsenide and phosphide cooling substrates with metals, GaN semiconductors and HEMT. In this research, the autoencoder deep neural network techniques in GaN HEMT for self‐heat reduction is driven by the ability to effectively analyze and model the thermal behavior of the device. Autoencoders learn complex relationships within temperature data and identify patterns associated with self‐heating. By leveraging these learned representations, the deep neural network optimizes control strategies to mitigate self‐heating effects in GaN HEMT devices, ultimately contributing to improved thermal management and enhanced overall performance. In this research, the use of genetic algorithms in GaN HEMT aims to optimize device parameters systematically, to minimize self‐heating effects and enhance overall thermal performance. The structure also enhances electron mobility within the channel. Results show DMG structures, exhibiting higher saturation output currents and transconductance despite self‐heating. The DMG exhibits a maximum gm value of 0.164 S/mm, which is 10% higher significantly enhancing GaN‐based HEMTs for improved reliability and efficiency in various applications.

Stimulation of Biological Structures on the Nanoscale Using Interfaces with Large Built-In Spontaneous Polarizations.

The electric potential stimulation of biological structures in aqueous environments is well-known to be a result of the gating of voltage-gated ion channels. Such voltage-gated ion channels are ubiquitous in the membranes of a wide variety of cells and they play central roles in a wide variety of sensing mechanisms and neuronal functions in biological systems. Experimental studies of ion-channel gating are frequently conducted using path-clamp techniques by placing a cumbersome external electrode in the vicinity of the extracellular side of the ion channel. Recently, it has been demonstrated that laser-induced polarization of nanoscale quantum dots can produce voltage sufficient to gate voltage-gated ion channels. This study specifically focuses on a new method of gating voltage-gated ion channels using 2D structures made of materials exhibiting large naturally occurring spontaneous polarizations, thereby eliminating the need for an external electrode or an illuminating laser. The work presents the use of self-polarizing semiconductor flakes, namely, 2H-SiC, ZnO, and GaN, to produce electric potential that is sufficient to gate voltage-gated ion channels when existing in proximity to it.

Boosting the Curie temperature of GaN monolayer through van der Waals heterostructures

The pursuit of van der Waals (vdW) heterostructures with high Curie temperature and strong perpendicular magnetic anisotropy (PMA) is vital to the advancement of next generation spintronic devices. First-principles calculations are used to study the electronic structures and magnetic characteristics of GaN/VS2 vdW heterostructure under biaxial strain and electrostatic doping. Our findings show that a ferromagnetic ground state with a remarkable Curie temperature (477 K), much above room temperature, exists in GaN/VS2 vdW heterostructure and 100% spin polarization efficiency. Additionally, GaN/VS2 vdW heterostructure still maintains PMA under biaxial strain, which is indispensable for high-density information storage. We further explore the electron, magnetic, and transport properties of VS2/GaN/VS2 vdW sandwich heterostructure, where the magnetoresistivity can reach as high as 40%. Our research indicates that the heterostructure constructed by combining the ferromagnet VS2 and the non-magnetic semiconductor GaN is a promising material for vdW spin valve devices at room temperature.

Demystifying metal-assisted chemical etching of GaN and related heterojunctions

GaN and related semiconductors have become an increasingly prominent material for a wide range of active and passive devices from optoelectronics to high frequency and power electronics as well as photocatalysis. Regardless of the application, anisotropic etching is required for micro and nano structuring, currently performed by reactive ion etching (RIE). Alternately, metal-assisted chemical etching (MacEtch) is an open-circuit plasma-free anisotropic etching method that has demonstrated high aspect ratio device structures devoid of plasma-induced damage found in RIE. This paper presents an in-depth study of the ensemble electrochemical mechanisms that govern the photo-enhanced MacEtch process of GaN and related heterojunctions. Through in-depth experimental investigations, modeling and simulations, the effects of local cathode and anode design, energy-band alignments, and solution chemistry on MacEtch are correlated with the underlying electronic mechanisms of carrier generation, annihilation, transport, and extraction, establishing a fundamental framework for parametrized prediction of system behavior. These findings carry profound implications for tailored design of photoelectrochemical processes employed not just for uniformly etching wide/ultrawide bandgap materials but more broadly for semiconductor-based photocatalytic reactions in general. One-pot photo-enhanced MacEtching of AlInGaN multi-heterojunction device structures including superlattices and multi-quantum wells are demonstrated.

Prediction of the Structural, Mechanical, and Physical Properties of GaC: As a Potential Third-Generation Semiconductor Material.

Similar to GaN and SiC semiconductors, GaC may be a potential semiconductor because of the mixed elemental features of Ga and C. Unfortunately, the phase stability and mechanical and physical properties of GaC are unknown. To search for novel third-generation semiconductors, the present study delves into an in-depth analysis of the structural stability and electronic and optical properties of GaC by DFT calculations. Similar to GaN, three GaC phases are discussed. It is found that three GaC phases (two cubic phases and one hexagonal phase) are first predicted. The band gaps of Fm3̅m, F4̅3m, and hexagonal GaC are 0.449, 2.733, and 3.340 eV, respectively. In particular, the band gap of F4̅3m GaC and hexagonal GaC is bigger than that of GaN. Compared to GaN semiconductors, the C-2p state is in the valence band region across the Fermi level, which is beneficial to electronic mobility and electronic transport capacity near the Fermi level. In addition, three GaC phases exhibit ultraviolet properties. The first peak of three GaC phases produces the right migration compared to the GaN semiconductor. Therefore, the author predicts that GaC is a potential third-generation semiconductor material which is potentially used in future third-generation semiconductor industries.

Broadband Eddy Current Measurement of the Sheet Resistance of GaN Semiconductors.

Although the classical four-point probe method usually provides adequate results, it is in many cases inappropriate for the measurement of thin sheet resistance, especially in the case of a buried conductive layer or if the surface contacts are oxidized/degraded. The surface concentration of dislocation defects in GaN samples is known to challenge this kind of measurement. For the GaN sample presented in this study, it even totally impaired the ability of this method to even provide results without a prior deposition of gold metallic contact pads. In this paper, we demonstrate the benefits of using a new broadband multifrequency noncontact eddy current method to accurately measure the sheet resistance of a complicated-to-measure epitaxy-grown GaN-doped sample. The benefits of the eddy current method compared to the traditional four-point method are demonstrated. The multilayer-doped GaN sample is perfectly evaluated, which will allow further development applications in this field. The point spread function of the probe used for this noncontact method was also evaluated using a 3D finite element model using CST-Studio Suite simulation software 2020 and experimental measurements.

Recent Advancements in α‐Ga2O3Thin Film Growth for Power Semiconductor Devices via Mist CVD Method: A Comprehensive Review

AbstractThis review discusses the impact of alpha‐gallium oxide (α‐Ga2O3) on potential high‐power device applications. To date, there are high requirements for efficient high‐power delivery and low‐power loss device material in power industries. III‐VI oxide semiconductor family, α‐Ga2O3,is recognized as a promising, future power semiconductor material owing to its ultrawide bandgap of 5.3 eV, high breakdown field of 10 MV cm−1, and a large Baliga's figure of merit. A highly expected α‐Ga2O3power semiconductor electronic device (Schottky barrier diode and field effect transistor) can perform better than conventional semiconductor materials Si, SiC, and GaN. However, there is a lack of research into using mist CVD to cultivate high‐quality α‐Ga2O3for high‐power devices like FETs and SBDs. Currently, the mist CVD‐grown α‐Ga2O3thin film power device is still in its early stages, and one of the main reasons for this is defects of the thin film, which impede material electron mobility. The purpose of writing this article is to provide an overview of the development of α‐Ga2O3heteroepitaxial thin film by the mist CVD process for use in high‐power devices such as Schottky barrier diodes (SBD) and field effect transistors (MOSFET). 1. α‐Ga2O3α‐Ga2O3. Furthermore, multiple viewpoints highlight the challenges and future trends toward device performance sustainability in a scientific society.

Enhancing Semiconductor Package Reliability through Mechanical Property Optimization of Pressureless Sintering Die Attach Adhesives

There is growing demand for high-power devices, wide bandgap SiC and GaN semiconductor materials in semiconductor market, and a drive to integrate die attach materials that can replace lead-containing solders. However, epoxy-based and solder materials face challenges to meet high thermal conductivity and survive elevated working temperatures. Pressure-assisted silver sintering has overcome these challenges, but downsides of pressure-assisted silver sintering are that it requires special equipment and for some applications, packages are unable to withstand the pressure required to facilitate sintering. Pressureless sintering materials could be processed using the same equipment as traditional die attach adhesives. It develops strong metal bonds to substrates, providing high thermal conductivity and withstanding high temperatures. However, compared to pressure-assisted sintering, pressureless materials may have difficulties to form a dense bondline structure if the formulation design is not optimized. Moreover, once the sintered structure is built during cure, further bondline reduction may induce additional stress. Therefore, it is critical that the pressureless sintering material’s mechanical properties are formulated to effectively manage stress and pass all reliability testing – especially for automotive packages. This paper will present the findings from a study that evaluated the impact of various formulation components – such as silver packing and resin chemistry – on the mechanical properties and interfacial bonding of pressureless sintering die attach adhesives. The effect on in-package reliability performance was also investigated to better understand material properties that can pass reliability testing while maintaining high thermal and electrical conductivity adhesive requirements.

Experimental comparison of planar transformer architectures for half-bridge resonant topology

Power electronics is experiencing a strong growth, driven by industrial demand for applications as diverse as wall adapters and renewable energy. In addition to topologies, semiconductors or control, there is also a need for research in magnetics, such as planar transformers, which are very useful for certain applications where a low converter profile is desired, so that replacing traditional wire transformers has a quantitative advantage in terms of power density and geometry, as well as EMI reduction. In this paper, an experimental comparison of different planar transformer architectures is made, a contrast of the test results is presented. Six possibilities are carried out, dealing with diverse configurations in primary and secondary windings, of which a theoretical estimation of losses is performed. To demonstrate the effect of variations in the proposals, a 100 W prototype converter, with an input voltage range of 320 to 380 V and an output range of 5 to 20 V is developed based on the novel hybrid flyback topology, reaching a maximum efficiency of 97% using GaN semiconductors. With it, a comparison is made in terms of efficiency and common noise between the alternatives.

Enhanced photoelectrochemical water splitting performance of GaN nanowires on textured Si (100) platforms: The role of texturing in 3.69 % STH conversion efficiency

Nanostructured GaN semiconductors, including 0D quantum wells and 1D nanowires (NWs), as well as 3D nanoporous structures, have the potential to enhance the efficiency of photoelectrochemical (PEC) cells due to their shorter charge carrier transfer paths, accelerated separation of photogenerated carriers, and enhanced sunlight absorption. However, their practical applicability is limited due to poor stability and low solar-to-hydrogen conversion efficiency. To address these issues, one approach is to load a passivation layer and cocatalyst onto the GaN surfaces to protect against oxidation and corrosion and promote the oxidation of water, respectively. Another strategy is to design these structures on textured platforms to enhance light management, resulting in broader absorption of wavelengths and reduced sensitivity to incident angle and light polarization. In this study, we present a novel comparison of PEC-WS performance among 120 CdS/ZnO/GaN nanowires fabricated on different substrates, including planar Si (120 CdS/ZnO/GaN NWs-Si), textured 3D pyramids (120 CdS/ZnO/GaN-Si PNWs), and NWs Si (120 CdS/ZnO/GaN-Si HNWS). Compared to the other substrates, 120 CdS/ZnO/GaN-Si HNWS photoanode showed a 1.14 and 1.26-fold increase in photocurrent density and 3.69 % solar to hydrogen conversion efficiency under 1-Sun illumination. Our Si texturing approach, in-depth understanding of charge transportation, and demonstration of a co-catalyst-loaded core-shell passivated structure offer promising opportunities for achieving highly efficient PEC-WS performance in GaN-based photoanodes.

Spin valve effect in CrN/GaN van der Waals heterostructures

In the pursuit of developing high-performance low-dimensional spintronic devices, two-dimensional van der Waals heterostructures comprising non-magnetic nitride and ferromagnetic materials have emerged as a crucial area of investigation. This paper proposes a novel structure that employs hexagonal two-dimensional semiconductor GaN flanked by two half-metallic two-dimensional CrN layers. The stability of the proposed structure is verified via first-principles calculations, which indicate good thermodynamic and magnetic stability. The transport characteristics of electrons in the structure are analyzed through the Band structures and density of states. Specifically, the study examines the spin polarizability of parallel and anti-parallel magnetic configurations of the CrN/GaN/CrN vdW heterostructure, and the results demonstrate a significant spin valve effect. Overall, the study establishes the potential of the CrN/GaN/CrN vdW heterostructure as a candidate for the development of innovative spintronic devices.

Simulation-Based Analysis of the Effect of Alpha Irradiation on GaN Particle Detectors.

Radiation-hardened semiconductor GaN has drawn considerable attention owing to its excellent properties such as large displacement energy. Many studies have focused on evaluating the degradation of GaN-based power device performance by proton beam or particle irradiation, while quantitative analysis of the energy transfer process of particles inside the material and the mechanisms involved in inducing degradation of electrical properties are rare. Here, on the basis of the fabricated alpha-particle detector, a device model validated by basic electrical experiments is established to simulate the influence of alpha-particle irradiation on the leakage current of the device. We observe that the current does not change significantly with increasing radiation fluence at low bias, while it shows a descending trend with increasing radiation fluence at higher bias. However, increasing the energy of the radiation particles at the same radiation fluence directly leads to a monotonically elevated leakage current. Such a series of phenomena is associated with radiation-induced changes in the density of trapped states within the active layers of the device.