Gallium Arsenide Photoconductive Semiconductor Switches Research Articles

Switching jitter of avalanche gallium arsenide photoconductive semiconductor switch influenced by multiple avalanche domains.

The stability of synchronous operation is directly related to the time jitter of the gallium arsenide photoconductive semiconductor switch (GaAs PCSS). In this work, a numerical model for the switching jitter of avalanche GaAs PCSS is established, and the impacts of triggering optical energy and bias electric field on the switching jitter are investigated numerically based on an equivalent bulk current channel. The proposed numerical model predicts well the changing characteristics of switching time as well as switching jitter, which has been demonstrated by the experimental results. On this basis, the theory of multiple avalanche domains is introduced to compare the domain evolutions influenced by the bias electric field and triggering optical energy. The results indicate that the reduction of switching jitter is significantly determined by the accelerated formation and evolution of avalanche domains, which provides a good explanation of the jitter mechanism of switching time.

Optimization design of electrode structure of GaAs photoconductive semiconductor switch

Previous studies revealed that changing the electrode structures of a gallium arsenide photoconductive semiconductor switch (GaAs PCSS) can significantly affect the local electric field and current density at the electrodes. Knowing the optimization of the electrode structures of GaAs PCSS can improve the withstand voltage performance and current carrying capability. In this work, we optimize the surface contact electrode structure of GaAs PCSS, and numerical simulations are performed to systematically study the electric field and current density distribution in the bulk of the device. The result shows that the maximum transverse current density and maximum longitudinal current density of the embedded 172° isosceles trapezoid electrode structure are smaller than other kinds of electrode structures, which is the most favorable for improving the withstand voltage and current carrying capability of GaAs PCSS.

Investigation on the Switching Transient of GaAs PCSS Operating in the Transition From Linear to Nonlinear Mode

The switching transient of gallium arsenide photoconductive semiconductor switch (GaAs PCSS) undergoing the transition from linear mode to nonlinear mode is investigated based on a “two-channel” model. Excellent agreement between the simulated and the experimental output waveforms is achieved first in the study of this transitional mode. The numerical results have revealed that a competitive relationship exists between the switching and nonswitched channels of the PCSS, and the formation and evolution of avalanche domains boost the nonlinear mode developing in the switching channel to win out from the linear mode dominated by the nonswitched channel. Based on the numerical model, the effects of the cross section of current channel on the output characteristics are well analyzed and discussed, which have also been demonstrated experimentally.

Pulse Width Control Based on Blumlein Pulse Forming Line and SI-GaAs PCSS

In this paper, the output electrical pulse width of semi-insulating gallium arsenide photoconductive semiconductor switch (SI-GaAs PCSS) is controlled by means of Blumlein pulse formation line. Under the condition that the bias voltage is 28 kV and the laser pulse width is 9.5 ns, the electric pulse width obtained by using high-power pulse system transmission is 10 ns and the output voltage is 23 kV. Based on the Blumlein pulse formation line theory, the output pulse width and transient impedance are analyzed. The results show that the holding time of carriers avalanche multiplication can be controlled.

Study on Output Characteristics of 20 kV/100 ns Nonlinear GaAs Photoconductive Semiconductor Switch

In this paper, the output electric pulse characteristics of gallium arsenide photoconductive semiconductor switch (GaAs PCSS) with bias voltage of 20 kV and pulse width of about 100 ns are studied. By designing the reflection and transmission optical paths, the absorption rate of the trigger optical of the GaAs PCSS at a wavelength of 1064 nm was measured to be 24.8%. When the bias voltage is 16 kV-20 kV, the avalanche multiplication rates of carriers are calculated respectively. The relationship between the output current waveform and the residual charge in the energy storage capacitor is analyzed when the bias voltage is 20 kV. And the trend of GaAs PCSS electric field intensity and current waveform change with time. This research will be helpful for the application design of GaAs PCSS under the nonlinear mode with special requirements, and has important significance for the application of frontier science.

Research on the thermal failure mechanism of an opposed-contact gallium arsenide photoconductive semiconductor switch in avalanche mode

The switching mechanism and the thermal process of a gallium arsenide (GaAs) photoconductive semiconductor switch (PCSS) with an opposed-contact is investigated by numerical simulation of the two-dimensional (2D) structure using temperature-dependent physical parameters of the carriers in GaAs. Triggered by a low-energy laser pulse, the PCSS switches on due to the formation and evolution of multiple powerful avalanche domains. The 2D evolving characteristics of the avalanche domains on the two sides of photogenerated plasma during the switching transient are comparatively analysed. It is found that the ionizing centre of each domain moves with the drift of accumulated electrons inside the domain. Meanwhile, the evolution of avalanche domains causes an obvious thermal effect along the drift path of ionizing centres during the switch-on stage of PCSS. Then, the temperature keeps increasing at the edge of the anode and cathode although the switching current starts dropping after the conduction of PCSS, and finally peaks at ∼491 K and ∼541 K, respectively. The simulation results indicate that the 2D filamentary current flows along the drift path of ionizing centres inside the avalanche domains, which finally leads to filamentary erosion after continuous operation of the PCSS. On the basis of numerical simulation, an experiment with opposed-contact GaAs PCSS with 2.5 mm gap at the bias field of ∼90 kV cm−1 is performed. The thermal erosion is found to initially accumulate at the edge of the electrodes and then spreads along the current channel into the GaAs substrate, which is in accordance with the simulation results and analysis.

Effect of Transition Mechanism of Photon-Induced Carriers on Time Jitter of GaAs Photoconductive Semiconductor Switches

To investigate the effect of photon-induced carrier transition mechanism on switch stability, the time jitters of 2-mm-gap gallium arsenide photoconductive semiconductor switches (GaAs PCSSs) are compared when triggered by lasers of two different wavelengths, i.e., 1064 and 532 nm. The time jitter model is proposed to clarify the synergy of the multiple adjustable macroparameters of trigger conditions. The carrier valley occupation rates with respect to bias electric field are simulated, where the influence of the microprocedures, i.e., carrier generation, carrier intervalley transition, and carrier transportation, is considered. Our experimental results illustrate that the time jitter of the GaAs PCSS exhibits a nonmonotonous behavior and obtains a local minimum at ~3 kV/cm for 1064 nm; however, it shows a monotonous decrease to a constant value at about 3 kV/cm for 532 nm. Our analysis indicates that the discrepancy in GaAs PCSS time jitter is attributed to the difference in the relative fluctuation of the carrier velocity affected by the carrier valley occupation rate. This article is of great significance in optimizing the stability of GaAs PCSS and pulse power system by adjusting the macroparameters in the time jitter model.

Experimental study on multi-channel synchronous conduction conditions of GaAs-PCSS

Gallium Arsenide Photoconductive Semiconductor Switch (GaAs-PCSS) has outstanding features, such as, fast response, high repetition, low jitter and high-power capacity. Multi-channel design can effectively reduce the damage from high current in nonlinear mode and improve switch’s lifetime. In this paper, on the solid-state pulse forming line experimental platform, multiple GaAs-PCSSs are connected in parallel as one switch through a special fixture, and different trigger signals are applied to each of them, in order to study the necessary conditions for GaAs-PCSS multi-channel synchronous conduction. The results show that, firstly, by the same trigger signals, the on-current is successfully divided into 4 GaAs-PCSS channels; secondly, by different trigger signals, the delay time difference and trigger energy difference must be lower than 1 ns and 20 μJ respectively, if an effective current diversion is expected; thirdly, split and integrated multi-channel GaAs-PCSS structures are designed, and the integrated 20-channel GaAs-PCSS was slightly damaged after 7 000 shots.

Anode Failure Mechanism of GaAs Photoconductive Semiconductor Switch Triggered by Laser Diode

This paper presents an experimental study on the failure mechanism of high-current gallium arsenide photoconductive semiconductor switches (GaAs PCSSs) triggered by the laser diode. We propose a Blumlein pulse forming line to test the GaAs PCSS. The result shows that the damage of GaAs PCSS almost occurs at the anode under the circumstances that either anode or cathode is illuminated, since the highest amplitude of Gunn oscillation always occurs on the anode. We speculate that the failure of high-current GaAs PCSS is attributed to the Gunn effect according to the statistics about failure factors of GaAs PCSS. We use a scanning electron microscope to semiquantitatively analyze the compositions of the erosions microball or granules, which are gallium and arsenium. The result proves our speculation.

The Role of the Photo-Generated Carrier in Surface Flashover of the GaAs Photoconductive Semiconductor Switch

The development of Gallium arsenide photoconductive semiconductor switch has been hampered by the surface flashover. The surface flashover threshold with the laser excitation is far lower than the one without the laser excitation. In this paper, the phenomena of surface flashover, including the infrared video, flashover spectrum, and the voltage waveforms are presented to research their work mechanism. The dynamic development process of surface flashover is divided into four typical states. Based on the 1-D time domain finite element method, the role of the photo-generated carrier in the surface flashover is analyzed. Our results suggest that the photo-activated charge domain (PACD) will enhance the local electric field and result in the surface flashover occurrence between the electrodes and semiconductors. So the atoms of GaAs semiconductors and electrodes are involved in the surface flashover. According to the PACD theory, the experimental phenomena can be explained reasonably.

Study of the Lifetime of High-Power GaAs PCSSs Under Different Energy Storage Modes

This paper presents an experimental study on the lifetime of high-power gallium arsenide photoconductive semiconductor switches (PCSSs) under different energy storage modes. Under the capacitive energy storage mode, the lifetime of a PCSS was increased by a factor of 10 through a reduction in the capacitor size, which reduces the hold-time of the carrier avalanche multiplication. Under the transmission line energy storage mode, the lifetime of a PCSS was increased by more than twofold by reducing the bias electric field, which reduces the degree of the carrier avalanche multiplication. Additionally, the influence of various factors on device lifetime and the failure mechanisms are discussed. The experimental results and analysis indicate that electrode erosion and stress damage are the two leading factors that induce the failure of high-power PCSSs.

Research on synchronization of 15 parallel high gain photoconductive semiconductor switches triggered by high power pulse laser diodes

The synchronization of 15 parallel high gain gallium arsenide photoconductive semiconductor switches (GaAs PCSS) has been researched aiming to get higher output voltage. Each PCSS is triggered independently by a high power pulse laser diode. The pulse width, energy, peak power, and central wavelength of the laser pulse are approximately 18 ns, 360 μJ, 20 kW, and 905 nm, respectively. In the stacked Blumlein transmission lines structure, the synchronous conduction of 15 parallel GaAs PCSSs has been achieved by offering optimized bias voltage and laser parameters. The method of synchronization calculation is given, and the synchronization of the 15 parallel GaAs PCSSs is measured as 775 ps. Furthermore, influences of the bias voltage, laser parameters on the synchronization are analyzed. In the output terminal, superimposed by the output voltages of 15 Blumlein transmission lines, the total output voltage reaches up to 328 kV, which is the highest output voltage of GaAs PCSSs that has been reported so far.

High power, longevity gallium arsenide photoconductive semiconductor switches

A GaAs Photoconductive Semiconductor Switch (PCSS) with a 3-mm gap between the two opposed contact electrodes was developed with carefully chosen GaAs material, mechanical structure design, contact fabrication techniques and its insulation protection. It is charged by a pulse power supply under a bias of 15 kV, illuminated by laser pulses of 1064 nm in wavelength, 56.12 μJ in optical energy per shot and 1 kHz pulse repetition rate (PRR). The GaAs PCSS can last for more than 3.6×106 shots and produce output pulses of 2 MW in peak power, 2 ns pulse duration and 65 ps time jitter from a 50-Ω load of the oscilloscope. When an electric field of 100 kV/cm bias was applied, the peak power of the load was measured at 10 MW. A series of measurements on the voltage conversion rates (VCR) and time jitters have been carried out as the bias voltage increases. In particular, taking into account the dependence of optical absorption coefficient on the bias voltages, the curve of the VCR changes with the bias voltages were analyzed quantitatively.

High Current Operation of a Semi-insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggering a Spark Gap

A transient peak current as high as 5.6 kA is obtained by a GaAs photoconductive semiconductor switch (PCSS) in series with a spark gap. Based on the characteristics of the GaAs PCSS, mechanisms of discharge between the PCSS and the spark gap are discussed. It is implied that a hybrid operation mode of photo-activated charge domain occurs due to the superposition of the bias voltage and the instantaneous radio frequency voltage.

Mechanism of Current Oscillations in Gallium Arsenide Photoconductive Semiconductor Switches

Semi-insulating photoconductive semiconductor switch with an electrode gap of 4 mm, triggered by a laser pulse with energy of 0.5mJ, and applied bias of 2.5kV, the periodicity current oscillation with a cycle of 12ns is obtained. It is indicated that the current oscillation is one mode of transferred electron effect, namely quenched domain mode. This mode of trans-electron oscillator is obtained when the instantaneous bias electric field drops below the sustaining field (the minimum electric field required to support the domain) before the domain reaches the anode, which leads to the domain disappears somewhere in the bulk of the switch and away from the ohmic contacts. We mainly analyse the time-dependent characteristic of the mode, the theoretical analysis results are in excellent agreement with the experiment.