GaAs Low Noise Amplifier Research Articles

36 Gb/s Narrowband Photoreceiver for mmWave Analog Radio-Over-Fiber

Migrating toward higher frequencies and densification of the communication cells are two key enablers for increased wireless data rates. To make these trends economically viable, centralized architectures based on radio-over-fiber (RoF) are explored. This article describes the design of a photoreceiver that can be applied at the remote radio head in a 28 GHz analog RoF link. The devised photoreceiver comprises a Ge-on-Si photodetector and co-designed GaAs low noise amplifier offering 24 dB gain, corresponding to 224 V/W external conversion gain, over a 3-dB bandwidth between 23.5 and 31.5 GHz. The associated noise figure is 2.1 dB and an output referred third order intercept point up to 26.5 dBm can be obtained with a power consumption of 303 mW. Two possible applications are demonstrated in this article. First, the photoreceiver is tested in a 5G New Radio environment resulting in rms-EVM values below 2.46/3.47% for 100/400-MBaud 16-QAM transmission over the 24.25-29.5 GHz band. Secondly, very high data rates can also be supported, demonstrated by a 36 Gb/s link with an rms-EVM of 5.2%.

An X/Ku Dual-Band Switch-Free Reconfigurable GaAs LNA MMIC Based on Coupled Line

This article presents an X/Ku dual-band switch-free reconfigurable GaAs low-noise amplifier (LNA) realized by inter-stage and output-stage coupled lines. This article is the first switch-free reconfigurable LNA design in the coupled lines structure. After amplified by the broadband drive stage, the input signal is divided into two parallel single-band stages (consists of a high-band stage and a low-band stage) by the proposed inter-stage coupled line. Two split-band signals are combined by the proposed output-stage coupled line into the output port after amplified by the single-band stages. The proposed coupled lines are also included in LNA matching networks. Dual-band operation of the proposed reconfigurable LNA is achieved by turning off drain voltages of the unused single-band transistors. The reconfigurable LNA is designed in a 0.15-μm E-mode GaAs pHEMT process. The fabricated LNA features small-signal gains of 25-25.2/20.1-28 dB, noise figure (NF) of 1.28-1.41/1.23-1.51 dB, and output 1-dB compression point of 0.5-1.7/2.2-5 dBm over 8-10/12-20 GHz, while consuming 76/91 mA of dc current, with a size of 2.0 × 1.8 mm 2 .

Effects of HPEM stress on GaAs low-noise amplifier from circuit to component scale

This paper presents a study of High Power Electromagnetics (HPEM) stress effects on a GaAs (Gallium Arsenide) low-noise amplifier (LNA). This work aims to evaluate such electrical stress effect from circuit to component scale in relation to more general Intentional electromagnetic interference (IEMI) studies. Conducted susceptibility measurements were made on a specifically designed device under test (DUT). Those experiments yielded interesting results concerning exposition of the DUT to destructive values of interference power, as well as its response to non-destructive but significant powers. The destruction process has been analyzed using time-domain and frequency-domain measurements.

18-31 GHz GaN wideband low noise amplifier (LNA) using a 0.1 μm T-gate high electron mobility transistor (HEMT) process

GaN technology has attracted main attention towards its application to high-power amplifier. Most recently, noise performance of GaN device has also won acceptance. Compared with GaAs low noise amplifier (LNA), GaN LNA has a unique superiority on power handling. In this work, we report a wideband Silicon-substrate GaN MMIC LNA operating in 18-31 GHz frequency range using a commercial 0.1 μm T-Gate high electron mobility transistor process (OMMIC D01GH). The GaN MMIC LNA has an average noise figure of 1.43 dB over the band and a minimum value of 1.27 dB at 23.2 GHz, which can compete with GaAs and InP MMIC LNA. The small-signal gain is between 22 and 25 dB across the band, the input and output return losses of the MMIC are less than −10 dB. The P1dB and OIP3 are at 17 dBm and 28 dBm level. The four-stage MMIC is 2.3 × 1.0 mm2 in area and consumes 280 mW DC power. Compared with GaAs and InP LNA, the GaN MMIC LNA in this work exhibits a comparative noise figure with higher linearity and power handling ability.

고입력 내성을 위한 GaN HEMT 기반 S-대역 저잡음 증폭기

Abstract In this paper, we present design and measurement of LNA(Low Noise Amplifier) based on GaN HEMT(Gallium Nitride High Electron Mobility Transistor) to reduce the total noise figure of radar receiver and for robustness of LNA. In radar receiver using LNA based on GaAs(Gallium Arsenide) technology, limiter is necessary at the very front of the radar receiver to protect LNA. As a result, total noise figure of radar receiver is deteriorated. In this research, measured noise figure of LNA based on GaN HEMT is below 2 dB. In the case of commercialized GaAs LNA, recommended maximum input power is about 30 dBm. On the other hand, GaN HEMT LNA which is designed and measured is burned-out when input power is 43 dBm and robustness is guaranteed at input power 45.4 dBm. Key words: LNA, GaN HEMT, Robustness, Current Limit ‡wxˆ3‰Š 5wx‹9Œ wx . Ž ‘+C’“(Department of Wireless Communications Engineering,, Kwangwoon University) *ˆ3‰Š(Samsung Thales, Co, Ltd) `Manuscript received December 24, 2014 ; Revised February 5, 2015 ; Accepted February 6, 2015. (ID No. 20141224-105)`Corresponding Author: Jin-Joo Choi (e-mail: jinchoi@kw.ac.kr)

Low-loss meta-atom for improved resonance response

Measurements of a meta-atom integrated with a low noise amplifier into the split-ring resonator are presented. A comparison is made between baseline meta-atoms and one integrated with a GaAs low noise amplifier. S-parameter measurements in a RF strip-line show the resonant frequency location. The resonance null is more prominent for the integrated meta-atom. Biasing the low noise amplifier from 0 to 7 VDC showed that the resonant null improved with biasing voltage. As the biasing voltage increases, the transmission null reduced from -11.82 to -23.21 dB for biases from 0 to 7 VDC at resonant frequency.

ミリ波帯パッケージへの液晶ポリマーの適用

The high frequency characteristics of liquid crystal polymer (LCP) have been investigated using a microstrip line (MSL) on a silicon (Si) substrate to verify the possibility of the application of the material in millimeter-wave packaging. A LCP film was fabricated using a direct-bonding technique on Si substrate. Measured characteristics of insertion loss are compared between a LCP film and a SiO2 film. The loss of the LCP-MSL is approximately 1/2 of that of the SiO2-MSL. Moreover, a GaAs low noise amplifier (LNA) microwave monolithic integrated circuit (MMIC) was fabricated using a flipchip bonding technique on a LCP substrate to demonstrate an application for a millimeter-wave package. The measured output gain of the LNA package is over 11dB. The millimeter-wave LCP package is a promising technology in realizing low cost millimeter-wave radio equipment.