Graphical abstractDisplay Omitted The HKMG Fin MOS device is fabricated with different interface between SiGe and SiO2.The interface roughness between the SiGe and SiO2 is extracted as a function of root mean square by analysis HRTEM.The interface roughness between the SiGe and SiO2 is modeled by corrected mobility model.Mobility of SiGe along (110) limits the total effective mobility on FinFET device.The interface roughness influences the mobility of SiGe. In this work, the FinFET HKMG MOS devices are fabricated on silicon wafer with p-substrate. The interface roughness between the SiGe and SiO2 is experimentally extracted and calculated as a function of root mean square by analysis of high resolution transmission electron microscopy. The surface-roughness dependent mobility model is then incorporated into device simulation to study the mobility of SiGe along (110) and (100) orientations of the devices. We further analyze four devices with different surface roughness along (100) and (100) orientations to demonstrate the influence of surface roughness on the total effective mobility.