The present work reports the theoretical and experimental studies of structural, the electronic and optical properties of the CH3NH3PbX3(X=I and Br)(MAPX) thin film as precursor materials for perovskite based optoelectronic devices. X-ray diffraction, photoluminescence, atomic force microscopy and ultraviolet–visible–near infrared spectrophotometry were used to obtain, respectively, structural, morphological and optical properties of deposited films. This research used density functional theory (DFT) computation, using the GGA-PBE approximation, to investigate in depth the properties of CH3NH3PbX3(X=I and Br) hybrid perovskites. The X-ray diffraction (XRD) analysis revealed that the synthesized materials possess a high degree of crystallinity. The linearized enhanced plane wave full potential (FP- LAPW) approach based on the density functional theory (DFT) has been used to theoretically examine structural, the electronic, and optical properties of the CH3NH3PbX3(X=I and Br) thin film. The MAPbI3 thin film crystallizes in a tetragonal structure, while both MAPbBr3 perovskite thin film choose a cubic structure with different lattice parameters. The films exhibit homogeneity and a well-ordered crystalline structure, with distinct atomic planes visible in the analysis and high absorbance in the UV–Vis range, with bandgap energy around 1.50 and 2.20eV for CH3NH3PbX3(X=I and Br, respectively). The values we obtained are consistent with the theoretical predictions of the band gap energies as 2.04 eV for MAPBr3 and 1.14 eV for MAPI3. Moreover, both MAPI3 and MAPBr3 thin films demonstrate significant absorption in the visible region, around 80 %. This work is a detailed characterization of MAPbX3 lab-synthesized materials to pave the way toward their commercialization as precursors for perovskite based optoelectronic devices.
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