Dense (RD > 97 %) silicon carbide ceramics without any sintering additives were prepared by freeze granulation of silicon carbide powders, annealing of granulated powders and subsequent densification by field assisted sintering technique (FAST) at 1900°C. Thermal and electrical conductivity of prepared materials considering the mass fraction of SiC polytypes was investigated. Different ratio of alpha and beta silicon carbide has been achieved by adjusting dwell time during sintering. Thermal diffusivity, specific heat capacity, thermal conductivity, electrical conductivity, density, microstructure of additive-free SiC with various α/β content has been investigated. The electrical conductivity of SiC ceramics decrease from 104 S/m to 8 S/m as a content of α-SiC increase from 63 % to 94 %. Opposite trend, when thermal diffusivity increased from 47.3 to 69.9 mm2/s as a content of α-SiC increase from 63 % to 94 %, was observed. The highest thermal conductivity (λ=165 W/m.K) among the SiC ceramics sintered at temperatures ≤ 1900°C was achieved for additive-free SiC sintered at 1900°C under vacuum for 80 minutes.
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