Free-running Regime Research Articles

Performance of the mid-infrared Q-switched LD side-pumped Er:YSGG MOPA laser.

We report on a laser-diode (LD)-pumped master-oscillator power amplifier (MOPA) mid-infrared laser system based on an LD side-pumped Er:YSGG seed laser that can operate in both free-running and Q-switched regimes. In the free-running mode of the seed laser, the maximum amplified single-pulse energy was 83.4mJ. In Q-switched mode of the seed laser, a maximum single-pulse energy of 7.8mJ was achieved at 100Hz repetition rate with the pulse width of 90ns, corresponding to the peak power of 86.7kW and the single-pass amplification factor of 1.66. The results indicate that the LD side-pumped MOPA structure is an effective way to realize a nanosecond ∼3µm mid-infrared laser with high repetition rate and high pulse energy.

Evaluation of a composite nickel mirror as a back mirror of a flashlamp-pumped Nd:YAG laser system in free running regime

Evaluation of a composite nickel mirror as a back mirror of a flashlamp-pumped Nd:YAG laser system in free running regime

Optoelectronic reference X-band oscillator for radar systems

We present the design and results of studying the characteristics of an optoelectronic microwave oscillator in the free-running regime are presented, propose a method for synchronising it with a signal of a highly stable crystal oscillator using a phase-locked loop, and analyse the results of an experimental study on the frequency instability of an optoelectronic microwave reference oscillator. The optoelectronic microwave reference oscillator with optical gain and a 10 GHz oscillation frequency simultaneously provides ultra-low phase noise (less than – 142 dB Hz−1) at a 10 kHz frequency offset from the microwave carrier and a low level of spurs in the oscillation spectrum (no more than – 94 dBc). In this case, the temperature coefficient of the oscillation frequency is determined by the temperature instability of a highly stable crystal oscillator.

Watt-level diode-pumped continuous-wave Pr:LiYF4 laser at 670 nm and simultaneous dual-wavelength operation at 639 and 670 nm.

We report on blue-diode-pumped continuous-wave Pr:LiYF4 (YLF) visible lasers involving a less investigated 670 nm laser emission. In the free-running regime, a simultaneous dual-wavelength operation at 670 and 639 nm is achieved with a maximum output power of 1.67 W and a slope efficiency of 20.4%. Using a Y3Al5O12 (YAG) plate as an intracavity etalon, we have suppressed the 639 nm emission, and then a single-wavelength laser at 670 nm has been achieved with a maximum output power of 0.96 W and slope efficiency of 12.7%. The directly generated 670 nm laser source from Pr:YLF crystal with watt-level output power has advantages over diode laser or frequency-doubled Nd:YVO4 lasers operating at a similar laser wavelength, which could be used in biomedical technologies.

An Antenna with a Feeder for a Superconducting Terahertz Josephson Oscillator with Phase Locking

A principal layout of a Josephson terahertz radiation oscillator integrated with a transmitting antenna-lens system and a harmonic mixer (HM) for phase locking of radiation has been proposed and was successfully implemented. Two antenna-feeder systems designed for the central frequencies of 0.3 and 0.6 THz and located on the same chip with the oscillator are numerically simulated and fabricated. A microstrip transmission line between the oscillator and the antenna is used as the feeder. A study was carried out on matching the oscillator power and HM for two designs; the frequency range of pumping HM was 0.25–0.45 and 0.5–0.68 THz for the designs at 0.3 and 0.6 THz, respectively. Good agreement was obtained between experimental results and numerical simulations. A study of the spectral characteristics of the radiation of the oscillator into the external space for the 0.6 THz design using a superconducting integrated spectrometer was carried out. The linewidth of an emission line in free-running regime was of the order of several megahertz; in the phase locking regime down to tens of kilohertz with a signal-to-noise ratio of more than 20 dB was obtained.

Frontiers of Mid-IR Lasers Based on Transition Metal Doped Chalcogenides

Enabling broad tunability, high peak and average power, ultrashort pulse duration, and all known modes of laser operation—transition-metal (TM)-doped II–VI chalcogenides are the materials of choice for direct lasing in the mid-IR. The host materials feature broad infrared transparency, high thermal conductivity, low phonon cutoff, low optical losses, and are available as either single crystals or polycrystalline ceramics. Doped with TM ions, these media exhibit a four-level energy structure, the absence of excited state absorption, as well as broad absorption and emission bands. Doped single-crystals of high optical quality are difficult to grow; however, the advent of postgrowth diffusion doped ceramics has resulted in significant progress in laser development. Here, we summarize recent experimental laser results on Cr and Fe doped II–VI chalcogenides providing access to the 1.8–6 μm spectral range with a high (>60%) efficiency, multi-Watt-level [140 W in continuous wave (CW)] output powers, tunability of >1000 nm, short-pulse (<16 fs) multi-Watt oscillation, and multi-Joule output energies in free running and gain-switched regimes. We also review recent results on hybrid fiber-bulk (Er-fiber/Er:YAG, Tm-fiber: Ho:YAG/YLF) systems combining high efficiency of CW fiber lasers with high pulse energies of bulk materials and serving as pump sources of gain-switched Cr:II-VI lasers.

Sensitive Finite-State Computations Using a Distributed Network With a Noisy Network Attractor.

We exhibit a class of smooth continuous-state neural-inspired networks composed of simple nonlinear elements that can be made to function as a finite-state computational machine. We give an explicit construction of arbitrary finite-state virtual machines in the spatiotemporal dynamics of the network. The dynamics of the functional network can be completely characterized as a "noisy network attractor" in phase space operating in either an "excitable" or a "free-running" regime, respectively, corresponding to excitable or heteroclinic connections between states. The regime depends on the sign of an "excitability parameter." Viewing the network as a nonlinear stochastic differential equation where a deterministic (signal) and/or a stochastic (noise) input is applied to any element, we explore the influence of the signal-to-noise ratio on the error rate of the computations. The free-running regime is extremely sensitive to inputs: arbitrarily small amplitude perturbations can be used to perform computations with the system as long as the input dominates the noise. We find a counter-intuitive regime where increasing noise amplitude can lead to more, rather than less, accurate computation. We suggest that noisy network attractors will be useful for understanding neural networks that reliably and sensitively perform finite-state computations in a noisy environment.

Research progress of semiconductor up-conversion single photon detection technology

Quantum communication technology has achieved remarkable progress and development in recent years, and the single photon detector, as the receiving terminal, plays a vital role in communication systems. In this paper, we focus on the current mainstream semiconductor-based single photon detectors and review their device principle, operating mode, advantages and disadvantages. Besides, the research progress of a novel semiconductor near-infrared single photon detection technology (USPD) is introduced. The feasibility and superiority of the USPD device are demonstrated from the basic principle, device structure and key performance indicators of USPD, and the latest spatial optical coupling experiment results of the USPD are also given. The design principle of the USPD device is to utilize Si multiplication layer of the Si SPAD as a multiplication layer instead of InP in conventional InGaAs-SPAD. The Si-SPAD has a much lower dark count rate and afterpulsing effect because of high-quality material of Si. Such a characteristic design of USPD can suppress the afterpulsing probability to the same level as that of the Si-SPAD and enables it to operate in the free-running regime without sacrificing photon detection efficiency. For the same reason, the dark count rate (DCR) of USPD is also very low. The operating mechanism of USPD is to convert the infrared photons into near-infrared or visible photons and the emitted near-infrared photons can be detected by a Si SPAD, which provides us with a new idea for single photon detection.

Infrared single photon detector based on optical up-converter at 1550\u2009nm

High performance single photon detector at the wavelength of 1550 nm has drawn wide attention and achieved vast improvement due to its significant application in quantum information, quantum key distribution, as well as cosmology. A novel infrared up-conversion single photon detector (USPD) at 1550 nm was proposed to work in free-running regime based on the InGaAs/ InP photodetector (PD)- GaAs/AlGaAs LED up-converter and Si single photon avalanche diode (SPAD). In contrast to conventional In0.53Ga0.47As SPAD, the USPD can suppress dark count rate and afterpulsing efficiently without sacrificing the photon detection efficiency (PDE). A high PDE of ~45% can be achieved by optical adhesive coupling between up-converter and Si SPAD. Using a developed analytical model we gave a noise equivalent power of 1.39 × 10−18 WHz1/2 at 200 K for the USPD, which is better than that of InGaAs SPAD. This work provides a new single photon detection scheme for telecom band.

Pulse-spacing manipulation in a passively mode-locked multipulse fiber laser.

Passively mode-locked fiber lasers have been intensively applied in various research fields. However, the passive mode-locking typically operates in free-running regime, which easily produces messy multiple pulses due to the fruitful nonlinear effects involved in optical fibers. Actively controlling those disordered pulses in a passively mode-locked laser is of great interest but rarely studied. In this work, we experimentally investigate a flexible pulse-spacing manipulation in the passively mode-locked multipulse fiber laser by both intracavity and extracavity methods. A tuning range of pulse spacing up to 1.5 ns is achieved. More importantly, continuous pulse-spacing modulation is successfully demonstrated through external optical injection. It is anticipated that the results can contribute to the understanding of laser nonlinear dynamics and pursuing the optimal performance of passively mode-locked fiber lasers for practical applications.

Simultaneous dual-wavelength lasing at 1047 and 1053 nm and wavelength tuning to 1072 nm in a diode-pumped a -cut Nd : LiYF4laser

We report on diode-end-pumped a -cut Nd:YLF laser on 4 F 3/2 → 4 I 11/2 transition. In a free-running regime, using an output coupler with a radius of curvature of 1000 mm, we obtain dual-wavelength laser operation at both π -polarized 1047 nm and σ -polarized 1053 nm with maximum output power of about 1.25 W and the highest slope efficiency of about 50.9% at pump power of 5.77 W at room temperature, for the first time to our knowledge. Furthermore, using a 0.1-mm glass plate as a wavelength selector, a dual-wavelength laser at 1047 and 1072 nm can also be yielded with the maximum output power of 0.34 W, which has not been reported before.

Detection efficiency characteristics of free-running InGaAs/InP single photon detector using passive quenching active reset IC**Project supported by the National High Technology Research and Development Program of China (Grant No. 2013AA122902), the National Key Scientific Instrument and Equipment Development Project of China (Grant No. 2013YQ030595), and the National Natural Science Foundation of China (Grant Nos. 61274024 and 61474123).

InGaAs/InP avalanche photodiodes (APD) are rarely used in a free-running regime for near-infrared single photon detection. In order to overcome the detrimental afterpulsing, we demonstrate a passive quenching active reset integrated circuit. Taking advantage of the inherent fast passive quenching process and active reset to reduce reset time, the integrated circuit is useful for reducing afterpulses and is also area-efficient. We investigate the free-running single photon detector’s afterpulsing effect, de-trapping time, dark count rate, and photon detection efficiency, and also compare with gated regime operation. After correction for deadtime and afterpulse, we find that the passive quenching active reset free-running single photon detector’s performance is consistent with gated operation.

Laser cleaning of a nineteenth-century bronze sculpture: In situ multi-analytical evaluation

Laser cleaning of bronze artefacts is a very promising conservation approach and its wider distribution would benefit from further studies of its advantages and drawbacks. Some important references are available, yet laser cleaning cannot be considered a traditional method for bronze surfaces. In this paper, we report on the evaluation of cleaning tests performed on an important statue of Napoleon, depicted as Mars the Peacemaker, cast by Righetti in 1811 after a model by Antonio Canova. The sculpture is exposed to the outdoor environment in the main courtyard of the Brera Gallery, Milan, Italy. An analytical survey of corrosion products was carried out using X-ray diffraction, micro-Fourier transform infrared spectroscopy (μFTIR), and μRaman spectroscopy; and scanning electron microscopy with energy-dispersive X-ray spectroscopy analysis was applied to cross-sections. The results showed the ubiquitous presence of brochantite Cu4(SO4)(OH)6. Antlerite Cu3SO4(OH)4 is also occasionally present. Residues of an past conservation treatment (Incralac®) and of proteins were detected by μFTIR. Laser cleaning tests were carried out with an El.En. Combo laser, both in long Q-switched and short free-running regimes. Evaluation of the effects of cleaning was carried out with a portable microscope and a reflectance colorimeter. Moreover, a portable FTIR spectrometer was used in order to evaluate the presence of coating residues and corrosion products after cleaning. Electrochemical impedance spectroscopy was used in situ on a selection of the tested areas in order to characterize the effect of laser cleaning on the rate of corrosion. A specially designed contact probe was used for measurements in the frequency range 100 kHz–10 mHz both before and after cleaning.

Free-running InGaAs/InP single photon detector with feedback quenching IC

InGaAs/InP avalanche photodiodes (APD) are usually employed as Geiger-mode single photon detector at near-infrared wavelength between 1.0μm and 1.7μm. In order to work in the free-running regime rather than gated regime, we demonstrate a feedback quenching integrated circuit to rapidly quench the avalanche and reset the APD. Because this IC is close to the APD, parasitic capacitance is largely reduced, thus reducing the quench-time, reset-time and also the afterpulsing probability. We investigated the free-running single photon detector׳s afterpulsing effect, de-trapping time, dark count rate and detection efficiency and also compared with gated regime operation. After corrected for deadtime and afterpulse, we found the free-running detector performance is comparable with gated regime.

Diode-side-pumped, passively Q-switched Yb:LuAG laser

A high-gain, diode-side-pumped Yb:LuAG slab laser was designed and investigated for use at room temperature. Pumping occurred from a fast-axis collimated 2D laser diode stack emitting at a wavelength of 970 nm, with 0.8 J over a duration of 0.8 ms. The pump scheme, which enabled efficient mode matching and high gain, was analysed and experimentally verified for different dopant levels. An energy of 100 mJ with 23% slope efficiency in a near fundamental mode was achieved in the free-running regime. A peak power of 2.5 MW and a pulse energy of 10.1 mJ were demonstrated in passive Q-switching by means of a Cr:YAG saturable absorber with 39% initial transmission. The study defined the indications for optimizing such a system.

Single- and multi-wavelength laser operation of a diode-pumped ND:GGG single crystal around 1.33 µm

We report on the first continuous-wave laser operation of a diode-pumped Nd:GGG single crystal at several emission wavelengths in the 1.33µm spectral domain. Multi-wavelength laser operation at 1324, 1331 and 1337nm with a maximum laser output power of 1.83W and a laser slope efficiency of 28.9% for an output coupler transmission of 2.2% is obtained in the free-running regime. By inserting and tilting a 0.1-mm BK7 glass etalon to modulate the losses inside the laser cavity, single wavelength lasing at 1324nm and 1347nm are also achieved with maximum output powers of about 0.77W and 0.41W as well as laser slope efficiencies of 15.2% and 12.6%, respectively. Further increasing the pump power, based on the position of the etalon leading to the single laser wavelength operation at 1347nm, stable dual-wavelength laser operation is demonstrated at 1337 and 1347nm with a maximum output power of 0.61W.

Progress in Mid-IR Lasers Based on Cr and Fe-Doped II–VI Chalcogenides

Transition metal (TM) doped II-VI chalcogenide laser materials offer a unique blend of physical, spectroscopic, and technological parameters that make them the gain media of choice for cost effective broadly tunable lasing in the Mid-IR. The II-VI semiconductor hosts provide a low phonon cut-off, broad IR transparency, and high thermal conductivity. When doped with transition metal ions, these materials feature ultrabroadband gain, low saturation intensities, and large pump absorption coefficients. This combined with the low-cost mass production technology of crystal fabrication by postgrowth thermal diffusion, as well as broad availability of convenient pump sources, make these materials ideal candidates for broadly tunable mid-IR lasing in CW, gain-switched, free running, and mode-locked regimes of operation. This review summarizes experimental results on optically pumped lasers based on Cr and Fe doped II-VI wide band semiconductors providing access to the 1.9-6 μm spectral range with a high (exceeding 60%) efficiency, multi-Watt-level (18 W in gain switch and 30 W in pure CW) output powers, tunability in excess of 1000 nm, short-pulse (<;50 fs) multi-watt oscillation, multi-Joule long-pulse output energy, and narrow spectral linewidth (<;100 kHz).

Generation regimes of a pulsed Nd:YAG laser with transverse LED pumping and multiloop self-pumped phase-conjugate cavity

The generation regimes in a pulsed Nd:YAG laser with transverse LED pumping and multiloop self-pumped phase-conjugate cavity on the gain gratings are studied. The differential efficiency of laser is 27% in the free-running regime at a pulse energy of up to 1 J and quality parameter M2 of no greater than 1.5. The pulse energy under passive Q-switching is no less than 60% of the pulse energy in the free-running regime at the same beam quality. The generation of the narrow-band radiation is demonstrated. A generation band of no greater than 1.2 GHz corresponds to the primary single-frequency high-power laser pulse in the free-running mode under conditions for self-Q-switching on the gain gratings. When additional elements (F2−:LiF and Cr4+:YAG crystals) are introduced in the optical scheme of the phase-conjugate cavity, similar narrowband single-mode generation is observed in the passive Q-switching regime as a pulse train or monopulse. The laser pulse power is up to 2 MW at a pulse duration of 20 ns.

Dual frequency laser with two continuously and widely tunable frequencies for optical referencing of GHz to THz beatnotes

A dual-frequency 1.55 µm laser for CW low noise microwave, millimeter and sub millimeter wave synthesis is demonstrated, where frequency stabilization is possible on each wavelength independently. The solid state Er:Yb laser output power is 7 mW. The amplitude noise is -150 dBc/Hz at 1 MHz offset frequency. In free running regime, the frequency noise is 3.10(5)/f Hz/sqrt(Hz) (800 Hz on a 1µs timescale), better than commercial fibered or semi-conductor sources at this wavelength.

Perfect and robust phase-locking of a spin transfer vortex nano-oscillator to an external microwave source

We study the synchronization of the auto-oscillation signal generated by the spin transfer driven dynamics of two coupled vortices in a spin-valve nanopillar to an external source. Phase-locking to the microwave field hrf occurs in a range larger than 10% of the oscillator frequency for drive amplitudes of only a few Oersteds. Using synchronization at the double frequency, the generation linewidth is found to decrease by more than five orders of magnitude in the phase-locked regime (down to 1 Hz, limited by the resolution bandwidth of the spectrum analyzer) in comparison to the free running regime (140 kHz). This perfect phase-locking holds for frequency detuning as large as 2 MHz, which proves its robustness. We also analyze how the free running spectral linewidth impacts the main characteristics of the synchronization regime.