Fourfold Magnetocrystalline Anisotropy Research Articles

Co2Fe(Ti0.5Al0.5) epitaxial thin films: Structural and magnetic properties of a Heusler alloy with Z-site transition metal substitution

We investigate the structural, static, and dynamic magnetic properties of epitaxial Heusler Co2Fe(Ti0.5Al0.5) (CFTA) alloy thin films with thickness varying from 6 nm to 80 nm grown by sputter beam epitaxy on cubic MgO(001), MgAl2O4(001), and hexagonal Al2O3(112̄0) substrates. X-ray diffraction measurements indicate epitaxial growth of CFTA thin films with B2 chemical ordering, with cubic [001] and [220] CFTA axes normal to the cubic and hexagonal substrates, respectively. Microstructure analysis of films grown on MgO substrates reveals a uniformly oriented epitaxial crystal with small variations consistent with strain distortions, providing an explanation for the relatively large X-ray rocking curve values found. Meanwhile, films on Al2O3(112̄0) substrates reveal columnar growth with frequent in-plane grain rotations. A pronounced four-fold magnetocrystalline anisotropy is observed in epitaxial thin films grown on cubic substrates. A pronounced uniaxial anisotropy for films grown on Al2O3(112̄0) substrates is observed. A saturation magnetization of ∼5.0μB/f.u. (where f.u. represents formula unit) is obtained at room temperature, slightly smaller compared to the expected value based on the Slater-Pauling rule. Ferromagnetic resonance spectroscopy finds an effective damping parameter and inhomogeneous linewidth broadening comparable to those found in parent compound Co2FeAl, which suggests that Ti substitution can be achieved without negatively affecting the magnetic properties of the system.

Influence of ferromagnetic layer thickness on the Gilbert damping and magnetocrystalline anisotropy in PLD grown epitaxial Co2FeSi Heusler alloy thin films

In the present work, full Heusler alloy (FHA) Co2FeSi (CFS) epitaxial thin films with thickness (tCFS) ranging from 5–25 nm were grown by Pulse laser deposition (PLD) on MgO (001) substrates at an optimized deposition temperature of 600°C. Dynamic magnetization response of PLD-grown CFS thin films was systematically investigated as a function of tCFS. Thickness-dependent structural and magnetic correlation exhibit a non-monotonic variation in Gilbert damping parameter, α. The ferromagnetic resonance (FMR) investigation revealed that the presence of lattice strain and a lower degree of atomic ordering in the thinner FHA CFS films, results in additional enhancement of α. The lowest α value of 4×10−3 is obtained from the theoretical fit of experimental data in a 20 nm thick film. This low value of α is suitable in magnonic devices, such as spin-transfer torque magnetic random-access memories (STT-MRAMs) where an efficient spin injecting source from a FHA ferromagnet to a non-magnetic interface is required. Further, in-plane angle-dependent (φ-variation) FMR measurements of the sample yield an intrinsic four-fold magnetocrystalline anisotropy (MCA) along with the presence of uniaxial anisotropy that has non-monotonicity with tCFS. A significant value of cubic anisotropy constant of 5.16×105erg/cm3 has been obtained in the film with a thickness of around 15nm. Further investigation suggests that uniaxial anisotropy in the CFS/MgO film is a combination of strain-induced magneto-elastic and interface-related contribution that is intrinsic in nature. The experimental observations have been verified by using micromagnetic simulations run on the epitaxial crystal structure. FMR mode position and linewidth of varied thickness CFS films are generated by micromagnetic simulations utilizing the Landau–Lifshitz–Gilbert formalism.

Magnetic anisotropy and reversal in epitaxial FeGa/IrMn bilayers with different orientations of exchange bias

Epitaxial FeGa/IrMn bilayers with exchange biases along the FeGa[100] and [110] directions are prepared on MgO(001) single crystal substrates by magnetron sputtering through controlling the orientation of the external field <i>in situ</i> applied during growth. The effect of the exchange bias orientation on the magnetic switching process and the magnetic switching field are studied. The X-ray <i>φ</i>-scan indicates that the FeGa layer is epitaxially grown with a 45° in-plane rotation on the MgO(001) substrate along the FeGa(001)[110] direction and the MgO(001)[100] direction. The measurements of the angular dependence of the ferromagnetic resonance field and the corresponding fitting to the Kittel equation show that the samples have a superposition of fourfold symmetric magnetocrystalline anisotropy <inline-formula><tex-math id="M4">\begin{document}$ {K}_{1} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M4.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M4.png"/></alternatives></inline-formula>, unidirectional magnetic exchange bias anisotropy <inline-formula><tex-math id="M5">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M5.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M5.png"/></alternatives></inline-formula>, and uniaxial magnetic anisotropy <inline-formula><tex-math id="M6">\begin{document}$ {K}_{\mathrm{u}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M6.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M6.png"/></alternatives></inline-formula> with configuration of <inline-formula><tex-math id="M7">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[100\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M7.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M7.png"/></alternatives></inline-formula> or <inline-formula><tex-math id="M8">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[110\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M8.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M8.png"/></alternatives></inline-formula>. The combined longitudinal and transverse magneto-optical Kerr effect measurements show that sample with <inline-formula><tex-math id="M9">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[100\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M9.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M9.png"/></alternatives></inline-formula> exhibits square loops, asymmetrically shaped loops, and one-sided two-step loops in different external magnetic field directions. In contrast, the sample with <inline-formula><tex-math id="M10">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}}//\left[110\right] $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M10.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M10.png"/></alternatives></inline-formula> exhibits one-sided two-step and two-sided two-step loops as the magnetic field orientation changes. Because the <inline-formula><tex-math id="M11">\begin{document}$ {K}_{1} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M11.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M11.png"/></alternatives></inline-formula> is superimposed by <inline-formula><tex-math id="M12">\begin{document}$ {K}_{\mathrm{u}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M12.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M12.png"/></alternatives></inline-formula> and <inline-formula><tex-math id="M13">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M13.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M13.png"/></alternatives></inline-formula>, the in-plane fourfold symmetry of the magnetic anisotropy energy is broken. The local minima are no longer strictly along the in-plane <inline-formula><tex-math id="M14">\begin{document}$ \left\langle{100}\right\rangle $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M14.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M14.png"/></alternatives></inline-formula> directions, but make a deviation angle which depends on the relative orientation and strength of magnetic anisotropy. A model based on the domain wall nucleation and propagation is proposed with considering the different orientations of <inline-formula><tex-math id="M15">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M15.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M15.png"/></alternatives></inline-formula>, which can nicely explain the change of the magnetic switching route with the magnetic field orientation and fit the angular dependence of the magnetic switching fields, indicating a significant change of domain wall nucleation energy as the orientation of <inline-formula><tex-math id="M16">\begin{document}$ {K}_{\mathrm{e}\mathrm{b}} $\end{document}</tex-math><alternatives><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M16.jpg"/><graphic xmlns:xlink="http://www.w3.org/1999/xlink" xlink:href="12-20220166_M16.png"/></alternatives></inline-formula> changes.

High frequency dynamics and magnetic anisotropy of bcc Co films grown on Si (0 0 1) substrate

Dynamic magnetization and magnetic anisotropy of Cu/bcc-Co/CoSi2 /Si(001) system were investigated by Magneto-Optical Kerr Effect (MOKE) analysis and vector network analyzer ferromagnetic resonance (VNA-FMR). Typical fourfold magnetocrystalline anisotropy of bcc Co film and superposed uniaxial magnetic anisotropy were observed. The uniaxial magnetic anisotropy originated from shape anisotropy as confirmed by micromagnetic simulation. The large magnetocrystalline anisotropy results in high resonance frequency even in the zero applied field. The Gilbert damping parameter α obtained by analysis of the dynamic process is close to the theoretically estimated value of bcc phase Co. The Gilbert damping parameter of the bcc-Co film is larger than those of fcc-Co and hcp-Co films. This work indicates the Co damping parameter can be enhanced by using bcc structure, which will help create high-speed magnetoelectronic devices.

Electric control of magnetic properties in epitaxially grown FeRh/MgO/PMN-PT heterostructures

We epitaxially grew the metamagnetic FeRh films on ferroelectric PMN-PT(001) substrates and investigated the electric control of magnetic properties. An MgO buffer layer is inserted to reduce the considerably large lattice mismatch of 5.44% between FeRh and PMN-PT, leading to a nice epitaxial growth with a relationship of FeRh[110](001)||MgO[100](001)||PMN-PT[100](001). The as-grown FeRh film shows a typical antiferromagnetic-to-ferromagnetic phase transition by means of varying the temperature. Because a growth-induced uniaxial magnetic anisotropy is superimposed on the in-plane four-fold magnetocrystalline anisotropy, the epitaxial FeRh film displays different kinds of multi-step hysteresis loops at various field orientations. An electric field applied on the PMN-PT substrate can remarkably increase the coercivity of FeRh film, which presents a butterfly type shape, indicating a strain-mediated magnetoelectric coupling. Because of the inhibitory effect of the remnant compressive strain on the phase transition, the critical transition temperature and the magnetization are obviously enhanced and reduced, respectively, after removing the electric effect.

Magnetocrystalline anisotropy of the easy-plane metallic antiferromagnet Fe2As

Magnetocrystalline anisotropy is a fundamental property of magnetic materials that determines the dynamics of magnetic precession, the frequency of spin waves, the thermal stability of magnetic domains, and the efficiency of spintronic devices. We combine torque magnetometry and density functional theory calculations to determine the magnetocrystalline anisotropy of the metallic antiferromagnet Fe$_2$As. Fe$_2$As has a tetragonal crystal structure with the N\'eel vector lying in the (001) plane. We report that the four-fold magnetocrystalline anisotropy in the (001)-plane of Fe$_2$As is extremely small, ${K_{22}} = - 150~{\rm{ J/}}{{\rm{m}}^{\rm{3}}}$ at T = 4 K, much smaller than perpendicular magnetic anisotropy of ferromagnetic structure widely used in spintronics device. ${K_{22}}$ is strongly temperature dependent and close to zero at T > 150 K. The anisotropy ${K_1}$ in the (010) plane is too large to be measured by torque magnetometry and we determine ${K_1} = -830~{\rm{ kJ/}}{{\rm{m}}^{\rm{3}}}$ using first-principles density functional theory. Our simulations show that the contribution to the anisotropy from classical magnetic dipole-dipole interactions is comparable to the contribution from spin-orbit coupling. The calculated four-fold anisotropy in the (001) plane ${K_{22}}$ ranges from $- 292~{\rm{ J/}}{{\rm{m}}^{\rm{3}}}$ to $280~{\rm{ J/}}{{\rm{m}}^{\rm{3}}}$, the same order of magnitude as the measured value. We use ${K_1}$ from theory to predict the frequency and polarization of the lowest frequency antiferromagnetic resonance mode and find that the mode is linearly polarized in the (001)-plane with $f = $ 670 GHz.

Magnetization states driven by spin-transfer torque in spin-valve nanopillars in presence of four-fold magnetocrystalline anisotropy

In this work, the magnetization states under the spin-transfer switching effect are investigated in a nanopillar device composed of a half-metallic Heusler Co1.5Fe1.5Ge alloy with a four-fold in-plane magnetocrystalline anisotropy. A comparative study with a half-metallic Heusler alloy of Co2FeAl0.5Si0.5 and a typical material of Fe is realized by numerically solving the Landau-Lifshitz-Gilbert (LLG) equation with the Spin-Transfer Torque (STT) contribution, using micromagnetic simulations. Our ultimate goal is to elucidate the origins of the intermediate state (IS) that occurs during magnetization switching by deeply examining the effects of magnetocrystalline anisotropy and shape anisotropy on the magnetization states through analyzing and comparing various switching processes. Our simulation results showed that the magnetization switching via a single-step under low current densities is possible at certain critical cross-sectional dimensions of the ellipse that are adjusted to increase the demagnetization field against the four-fold in-plane magnetocrystalline anisotropy. As well, we provided in this paper a set of appropriate geometric dimensions which allow the magnetization to reverse via a single-step by overcoming IS with minimal spin-polarized current densities.

Thickness-dependent magnetic anisotropy in obliquely deposited Fe(001)/Pd thin film bilayers probed by VNA-FMR**Project supported by the National Basic Research Program of China (Grant Nos. 2015CB921403 and 2016YFA0300701), the National Natural Science Foundation of China (Grant Nos. 51427801, 11374350, and 51671212), and the Chinese Government Scholarship (Grant No. 2015GXYG37).

The thickness-dependent magnetic anisotropy of obliquely deposited Fe(001)/Pd thin films on Mg(001) is investigated by fitting the field-dependent resonant field curve using the Kittel equation. In this study, three Fe film samples with thicknesses of 50 monolayers (ML), 45 ML, and 32 ML deposited at 0°, 45°, and 55°, respectively, are used. The magnetic anisotropy constant obtained from ferromagnetic resonance (FMR) spectra exhibits a dominant fourfold magnetocrystalline anisotropy (MCA) at the normal deposition angle with larger Fe thickness. However, the in-plane uniaxial magnetic anisotropy (UMA) is induced by a higher oblique deposition angle and a smaller thickness. Its hard axis lies between the [100] and [010] directions. The FMR data-fitting analysis yields a precise measurement of smaller contributions to the magnetic anisotropy, such as in-plane UMA. Due to MCA, when the magnetic field is weaker than the saturated field, the magnetization direction does not always align with the external field. The squared frequency-dependent resonant field measurement gives an isotropic Landé g-factor of 2.07. Our results are consistent with previous experiments conducted on the magneto-optical Kerr effect (MOKE) and anisotropic magnetoresistance (AMR) systems. Thus, a vector network analyzer ferromagnetic resonance (VNA-FMR) test-method for finding UMA in obliquely deposited Fe(001)/Pd bilayer ferromagnetic thin films, and determining the magnetic anisotropy constants with respect to the film normal deposition, is proposed.

Component manipulated magnetic anisotropy and damping in Heusler-like compound Co2+xFe1−xAl

The component dependence of the magnetocrystalline anisotropy and the damping has been investigated in epitaxial Heusler-like compound Co2+xFe1−xAl films grown by molecular beam epitaxy (MBE) with x = −0.4, −0.2, 0, 0.2, and 0.4. All the films show a component tunable four-fold magnetocrystalline anisotropy with the easy axis along [1 1 0] orientation. The time resolved magneto-optic Kerr effect measurements reveal that the damping constant can be tuned in a range of 0.0065–0.0156 with a minimum value of 0.0065 at x = −0.2. This work provides a new approach to manipulate the magnetic dynamic properties of Heusler alloy Co2FeAl by adjusting the proportion of Co and Fe.

Epitaxial growth of Pd1−xFex films on MgO single-crystal substrate

In the paper we report on growth conditions, morphology, crystallographic structure and magnetic anisotropy of 20 nm thick, palladium-rich Pd1−xFex (0.01 < x < 0.1) alloy films grown on (001)-oriented MgO single-crystal substrate. Molecular beam deposition at ultra-high vacuum conditions has been utilized along with the three-step procedure to achieve the epitaxy conditions for the synthesized films. The scanning electron microscopy and atomic force microscopy have shown flat and smooth morphology of the films studied in a wide range of lateral scales. Insitu low energy electron diffraction and exsitu X-ray diffraction measurements confirmed that our Pd1−xFex alloy films are epitaxial. Ferromagnetic resonance investigations have shown the in-plane four-fold magnetocrystalline anisotropy characteristic for single-crystalline films with the cubic structure. The whole set of our measurements testifies the epitaxial cube-on-cube growth and excellent magnetic homogeneity of Pd1−xFex films on MgO substrate obtained within the three-step deposition process.

45° sign switching of effective exchange bias due to competing anisotropies in fully epitaxial Co3FeN/MnN bilayers

We report an unusual angular-dependent exchange bias effect in ferromagnet/antiferromagnet bilayers, where both ferromagnet and antiferromagnet are epitaxially grown. Numerical model calculations predict an approximately 45° period for the sign switching of the exchange-bias field, depending on the ratio between magnetocrystalline anisotropy and exchange-coupling constant. The switching of the sign is indicative of a competition between a fourfold magnetocrystalline anisotropy of the ferromagnet and a unidirectional anisotropy field of the exchange coupling. This predicted unusual angular-dependent exchange bias and its magnetization switching process are confirmed by measurements on fully epitaxial Co3FeN/MnN bilayers by longitudinal and transverse magneto-optic Kerr effect magnetometry. These results provide a deeper understanding of the exchange coupling phenomena in fully epitaxial bilayers with tailored materials and open up a complex switching energy landscape engineering by anisotropies.

Ultra-low magnetic damping of perovskite La0.7Sr0.3MnO3 thin films

The perovskite La0.7Sr0.3MnO3 (LSMO) films grown on different substrates were investigated by an angle resolved broadband ferromagnetic resonance technique. All films exhibited a four-fold magnetocrystalline anisotropy, which is in accord with the crystal structure. Moreover, a perpendicular uniaxial anisotropy changed from the (001)pc easy plane to the [001]pc easy direction when the strain of LSMO films varies from tensile to compressive. The ultra-low magnetic damping constant of 5.2 × 10−4 was obtained for a 44.6 nm LSMO film on an NdGaO3 (110) substrate. The breathing Fermi surface model in which the damping constant is proportional to the density of states at Fermi energy is the dominant mechanism for the intrinsic magnetic relaxation.

The effect of annealing temperature on the magnetic anisotropy in Co ultrathin film on MgO(001) substrate

Co epitaxial thin films with 2.5nm thickness were prepared on single-crystal MgO(001) substrates and annealed at different temperatures. The contribution of each interface of the MgO/Co/Cu trilayer to the in-plane magnetic anisotropy (IMA) was studied by changing interfacial coupling through annealing. The structure was measured by low energy electron diffraction (LEED), and the magnetic properties were measured using the anisotropic magnetoresistance (AMR) measurements and the longitudinal Magneto-optical Kerr effect magnetometer (MOKE). We found that the magnetic anisotropy of the as-deposited one shows superposition of a two-fold symmetry with a weak four-fold contribution caused by the stress of the interface between Co/Cu, which is along the easy axis [-110]. After annealing at 200°C, the symmetry of magnetic anisotropy was changed from uniaxial magnetic anisotropy (UMA) into four-fold symmetry due to the significant increasing of four-fold magnetocrystalline anisotropy. When the films were annealed above 300°C, the damage of the MgO/Co interface additionally decreased the IMA to isotropy. Meanwhile, the coercivity raised from 45Oe (without annealing) to 1200Oe (annealed at 400°C) along the easy axis direction. Our experimental results prove that the Co/Cu interface and the MgO/Co interface play an essential role in manipulating the four-fold and the UMA in the system.

Influence of thickness-dependent structural evolution on ultrafast magnetization dynamics in Co2Fe0.4Mn0.6Si Heusler alloy thin films

We experimentally investigate thickness $(t)$-dependent evolution of structural and magnetic properties in $\mathrm{C}{\mathrm{o}}_{2}\mathrm{F}{\mathrm{e}}_{0.4}\mathrm{M}{\mathrm{n}}_{0.6}\mathrm{Si}$ (CFMS) thin films and correlate them with ultrafast demagnetization time $({\ensuremath{\tau}}_{\mathrm{d}})$ and relaxation time $({\ensuremath{\tau}}_{1})$ as well as the Gilbert damping coefficient ($\ensuremath{\alpha}$). Structural ordering and magnetic parameters, including $\ensuremath{\alpha}$, exhibit a nonmonotonic variation with increasing $t$. A remarkably low value of $\ensuremath{\alpha}$ of 0.009 is obtained for the CFMS film with $t=20\phantom{\rule{0.16em}{0ex}}\mathrm{nm}$ without any buffer layers, which helps to avoid possible diffusion of the buffer layer into CFMS. Highest saturation magnetization, lowest coercivity, and the $\ensuremath{\alpha}$ value imply CFMS film with $t=20\phantom{\rule{0.16em}{0ex}}\mathrm{nm}$ is most suitable for integrated spintronics devices, viz. low-current switched spin transfer torque, and magnetic tunnel junction with a high tunnel magnetoresistance ratio at room temperature. Despite the presence of strain, a lower degree of chemical ordering in the low-$t$ regime, and increased defect density in the high-$t$ regime, we obtained a reasonably low value of damping. In addition to the intrinsic fourfold magnetocrystalline anisotropy, an induced uniaxial anisotropy is found, which also varies nonmonotonically with $t$. Finally, unique band structure controlled demagnetization and fast relaxation in half-metallic CFMS is correlated to $\ensuremath{\alpha}$.

Manipulating magnetic anisotropies of Co/MgO(001) ultrathin films via oblique deposition**Project supported by the Chinese Academy of Sciences–The World Academy of Sciences (CAS–TWAS) Fellowship Program, the National Basic Research Program of China (Grant Nos. 2015CB921403 and 2012CB933102), and the National Natural Science Foundation of China (Grant Nos. 51427801, 11374350, and 11274361).

We present a systematic investigation of magnetic anisotropy induced by oblique deposition of Co thin films on MgO (001) substrates by molecular beam epitaxy at different deposition angles, i.e., 0°, 30°, 45°, 60°, and 75° with respect to the surface normal. Low energy electron diffraction (LEED), surface magneto–optical Kerr effect (SMOKE), and anisotropic magnetoresistance (AMR) setups were employed to investigate the magnetic properties of cobalt films. The values of in-plane uniaxial magnetic anisotropy (UMA) constant Ku and four-fold magnetocrystalline anisotropy constant K1 were derived from magnetic torque curves on the base of AMR results. It was found that the value of Ku increases with increasing deposition angle with respect to the surface normal, while the value of K1 remains almost constant for all the samples. Furthermore, by using MOKE results, the Ku values of the films deposited obliquely were also derived from the magnetization curves along hard axis. The results of AMR method were then compared with that of hard axis fitting method (coherent rotation) and found that both methods have almost identical values of UMA constant for each sample.

Modification of the magnetic properties of Co films grown on MgO (100) by treatment with NaOH solution

We investigated the surface morphology and magnetic properties of Co films grown on MgO (100) substrates before and after treatment with a NaOH solution. The surface morphology evolves from a continuous film into isolated hexagonal nanodisks resulting from the formation of cobalt hydroxide. In the as-grown Co films the magnetic anisotropy behaves as a superposition of fourfold magnetocrystalline anisotropy and uniaxial magnetic anisotropy (UMA), and the magnetization reversal proceeds by two-step domain-wall motion. After the NaOH treatment the UMA is reduced and the magnetization reversal appears to be dominated by magnetization rotation. In addition, the exchange bias effect, which in the as-deposited films results from the presence of a cobalt oxide layer, disappears after the NaOH treatment, and can be reinduced by annealing the sample. The observed significant changes in the magnetic properties can be related to the disappearance and reappearance of a cobalt oxide top layer.

Magnetic anisotropies in epitaxial Fe3O4/GaAs(100) patterned structures

Previous studies on epitaxial Fe3O4 rings in the context of spin-transfer torque effect have revealed complicated and undesirable domain structures, attributed to the intrinsic fourfold magnetocrystalline anisotropy in the ferrite. In this Letter, we report a viable solution to this problem, utilizing a 6-nm-thick epitaxial Fe3O4 thin film on GaAs(100), where the fourfold magnetocrystalline anisotropy is negligible. We demonstrate that in the Fe3O4 planar wires patterned from our thin film, such a unique magnetic anisotropy system has been preserved, and relatively simple magnetic domain configurations compared to those previous reports can be obtained.

Ferromagnetic Resonance Studies of Exchange Biased CoO/Fe Bilayer Grown on MgO Substrate

Dynamic and static magnetizations of an exchange biased bilayer system which is constructed as a proximity of a CoO layer on an Fe-layer grown on the (100) oriented MgO substrate by ion beam sputtering technique have been investigated by ferromagnetic resonance (FMR) and vibrating sample magnetometry (VSM) techniques. The room-temperature FMR measurements reveal that the Fe layer is epitaxially grown on MgO substrate with four-fold magnetocrystalline anisotropy and the hard magnetization axis of the sample is the [100] crystallographic directions of MgO substrate. We have determined the g-value, effective magnetization, magnetocrystalline anisotropy constants and contributions to FMR linewidth due to the intrinsic Gilbert damping and inhomogeneity of magnetization by using Landau–Lifshitz–Gilbert (LLG) equation. We observed an unusual FMR line shape attributed to impedance switching of resonance cavity and complex component of conductivity of sample system. The low-temperature FMR measurement shows asymmetric hysteretic behavior of resonance field related to magnetic coupling of ferromagnetic and antiferromagnetic layers. From both FMR and VSM measurements between 10–300 K, the magnetocrystalline anisotropy is observed to dominate above blocking temperature, while unidirectional anisotropy is observed to dominate below blocking temperature over internal magnetic anisotropy. FMR spectra have a comparatively small linewidth between 40–100 Oe, which indicates to a high crystallinity of the Fe film. Gilbert constant was calculated as 0.007 from the linewidth fitting of FMR spectra. This small value is a suitable for reducing the critical switching current used in magnetic tunneling junction. Detailed exchange bias studies were carried out for hard and easy axis of the sample in the temperature range of 10–300 K. From both low-temperature FMR and VSM measurements, the blocking temperature of the system was determined as ∼60 K.

Broadband Ferromagnetic Resonance Study of ${\hbox{Co}}_{2}{\hbox{MnSi}}$ Thin Films: Effect of the Film Thickness

The thickness dependence of the static and dynamic properties of Co <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> MnSi (CMS) full Heusler was investigated. Five samples with thickness ranging from 7 to 100 nm were deposited by rf magnetron sputtering on single crystal MgO(001). X-ray diffraction and transmission electron microscopy (TEM) evidence the epitaxial growth of samples, with an epitaxial relationship MgO(001)[100]//CMS(011)[110]. Magnetic properties were studied by standard magnetometry and broadband stripline ferromagnetic resonance (FMR). We observe a four-fold magnetocrystalline anisotropy K <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> = 1.5 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> erg/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> for thicker samples, and an increase of K <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> up to 2.6 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> erg/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> for the thinnest sample, accompanied by an increase of saturation magnetization. We attribute this behavior to interfacial effect (strain or stoichiometry).

Simulation of multilevel cell spin transfer switching in a full-Heusler alloy spin-valve nanopillar

A multilevel cell spin transfer switching process in a full-Heusler Co2FeAl0.5Si0.5 alloy spin-valve nanopillar was investigated using micromagnetic simulations. An intermediate state of two-step spin transfer magnetization switching was reported due to the four-fold magnetocrystalline anisotropy; however, we discovered the intermediate state has two possible directions of −90° and +90°, which could not be detected in the experiments due to the same resistance of the −90° state and the +90° state. The domain structures were analyzed to determine the mechanism of domain wall motion and magnetization switching under a large current. Based on two intermediate states, we reported a multilevel bit spin transfer multi-step magnetization switching by changing the magnetic anisotropy in a full-Heusler alloy nanopillar.