Formation Of Silicon Carbide Research Articles

The Green Synthesis of Nanostructured Silicon Carbides (SiCs) from Sugarcane Bagasse Ash (SCBA) as Anodes in Lithium-Ion (Li-Ion) Batteries: A Review Paper

Silicon is a promising anode material for the increased performance of lithium-ion batteries because of its high elemental composition and specific capacity. The application of silicon on a commercial scale is restricted due to the limitation of volume expansion. Silicon is also expensive, making it difficult for large-scale commercialisation. Different methods were used to address these issues, including a sintering process and the sol–gel method, to form silicon carbide (SiC), a hard chemical compound containing silicon and carbon. The silicon carbide anode not only acts as a buffer for volume expansion but also allows for better infiltration of the electrolyte, increasing charge and discharge capacity in the battery. Like silicon, silicon carbides can be costly. The development of renewable energy systems is very important, especially in the development of energy storage systems that are not only efficient but also cost-friendly. The cost of the energy storage devices is lowered, making them easily accessible. Silicon carbides can be synthesised from sugarcane, which is the fibrous waste that remains after juice extraction. This could be beneficial, as we could never run out of such a resource, and it offers low carbon with a high surface area. Silicon carbides can be synthesised by carbothermal reduction of silica from sugarcane bagasse. This review provides a comprehensive understanding of silicon carbides and synthetic processes. The innovative use of waste to synthesise materials would reduce costs and comply with Sustainable Development Goals (SDGs) 7 (affordable and clean energy) and 13 (climate action).

Effect of rice husk morphology on the ability to synthesize silicon carbide by pyrolysis method

Silicon carbide (SiC) is a mineral with good technical properties and high economic value. However, the synthesis of SiC is expensive because it is synthesized at a high-temperature environment (above 1500oC). The synthesis of SiC from biomass can significantly reduce the synthesis temperature. One commonly used biomass material for synthesizing SiC is rice husk. However, the ability to synthesize SiC depends on the shape of the rice husk. The influence of the morphology of rice husk on the ability to synthesize SiC was studied in this study. Experimental results showed that the original rice husk would give better SiC formation capacity than the rice husk powder. The amount of SiC formed using the original rice husk when impregnated by sodium silicate solution and pyrolysis at 1200oC is 18.3% (wt%.). With rice husk powder, it is 15.12% (wt%.). The results of analysis of the mineral composition, functional groups, and morphologies by X-ray diffraction (XRD), Fourier Infrared Transform Method (FT-IR), and Scanning Electron Microscopy (SEM) found that the polymorphy of SiC is α-SiC and β-SiC. These minerals are the basis for SiC from rice husks, which can be applied as wear-resistant materials.

Thermodynamic modeling of silicon carbide formation during the Acheson process in non-stoichiometric mixtures

A brief review and critical evaluation of the literature related to the mechanism of carbothermic reduction of silicon oxide is presented. To resolve the contradictions in the literature data about the number of chemical reactions and key intermediate substances during the Acheson process, thermodynamic modeling of products of carbothermic reduction of silicon (IV) oxide at 1 bar total pressure was carried out. It was determined that CO2 and Si were absent among the intermediates at temperatures close to the silicon carbide formation temperature (from 1520 to ~2500 °С). Out of several dozen possible reactions, the two dominant reactions that result in the formation of silicon carbide in the Acheson process were identified. The effect of reagents temperature from 1000 to 3000 °С, bulk and local deviation from stoichiometry of the initial mixture on the composition of the reaction products was discovered. Obtained new data explains some empirical observations and greatly simplifies the physicochemical modeling of the Acheson process.

Rapid Joule heating-induced welding of silicon and graphene for enhanced lithium-ion battery anodes

In the pursuit of enhanced energy storage solutions, the application of silicon-based anode materials faces significant hurdles, primarily stemming from the rapid capacity degradation during battery cycles. This study introduces a novel and efficient method for fabricating Si/graphene composites (F-Si@rGO), enhancing the performance and longevity of silicon-based anodes. Utilizing ultra-high-speed thermal treatment, this technique controls the thermal interaction between carbon and silicon phases, leading to the formation of silicon carbide “riveting points” that firmly anchor silicon nanoparticles within the graphene matrix. This novel method effectively minimizes the problems of phase segregation, which are caused by varying degrees of wettability alteration in the two phases during conventional heat treatments, and guarantees a robust integration of graphene and silicon. This integration results in homogeneous charging and outstanding structural stability of the composites, over extended cycles of use. The resulting Si/graphene composites exhibit exceptional electrochemical performance, achieving a high initial capacity of 1141.3 mAh g−1 at 1C and maintaining a capacity of 894.95 mAh g−1 after 1000 cycles with minimal degradation (0.0216 % per cycle). This synthesis method, notable for its speed and scalability, offers a potential advancement in battery material technology, suggesting a path towards more resilient and efficient energy storage solutions.

Preparation of a graphite / SiC composite casting material and study of its performance

The inferior mechanical properties and thermal conductivity of carbon graphite materials are attributed to the presence of pores and cracks. The integration of graphite with ceramics has been proposed as a method to enhance these properties; however, graphite/ceramic composites fabricated through pressureless sintering often exhibit inadequate integration. In this paper, a diffuse-continuous network dual-reinforced graphite/silicon carbide(SiC) ceramic composite was prepared by integrating the graphite powder micro-thermal press forming technology with the fused deposition modelling(FDM) technology and combining the pressureless sintering and vacuum pressure impregnation processes. It was found that the addition of high purity silicon powder to the material formulation reacts with the resin carbon to form silicon carbide particles (SiC-p), which can play a role in diffusion enhancement. However, the addition of excessive silicon powder can have a detrimental effect, and the performance of diffusion enhanced graphite/silicon carbide composites is positively correlated with the density of billet formation, and the effect of diffusion continuous network dual enhancement is more obvious, and the performance of the composites is better compared to that of single diffusion enhancement. The compressive and flexural strengths of the graphite/SiC composites finally obtained reached 59.47 MPa and 44.25 MPa, respectively, and the thermal conductivity was 43.62 W/m·K, and the porosity and open porosity were 29.62 % and 20.48 %, respectively, which are comparable to those of manmade graphite castings, and have better gas permeability, which is expected to be applied in the casting field.

Temperature measurement and morphological/crystalline differences in the laser-induced carbonization of polydimethylsiloxane

Laser-induced carbonization, which allows for the facile generation of graphitic carbon, is considered a promising technique for fabricating arbitrary conductive microstructures. The morphology and crystallinity of the resulting product are acknowledged to be significantly influenced by laser irradiation conditions. However, unlike discussions pertaining to furnaces where detailed considerations of applied temperature and resulting products are common, discussions on the process of laser-induced carbonization are limited. In recent years, reports have shown that using polydimethylsiloxane (PDMS) as a precursor material not only produces graphitic carbon but also results in the formation of silicon carbide. In this study, we utilized a thermographic camera to measure temperature changes during laser-induced carbonization, aiming to elucidate the correlation between PDMS temperature fluctuations and the morphology and crystallinity of the resulting graphitic carbon. The results demonstrate that the morphology and crystallinity of the graphitic carbon formed through laser-induced carbonization are not solely determined by the maximum temperature in the laser-irradiated area. The temperature changes during laser irradiation play a crucial role in the selective generation of these materials.

Crystallization and Silicon Carbide Formation in Two-Layer Amorphous Silicon–Carbon Films during Electron Irradiation

Crystallization and Silicon Carbide Formation in Two-Layer Amorphous Silicon–Carbon Films during Electron Irradiation

Hybrid network formation of silicon carbide and expanded graphene nanoplatelets in epoxy resin for thermal management

AbstractThe current study discusses the incorporation of silicon carbide (SiC) and expanded graphene nanoplatelets (GNP) hybrid filler into epoxy resin to enhance its thermal conductivity, mechanical, and electrical insulation properties. The hybrid filler was incorporated into the epoxy resin by ultrasonic‐assisted blending solution process, and the thermal, electrical, and mechanical properties of the samples were assessed. The results displayed that both SiC and GNP fillers enhance the thermal conductivity of the epoxy resin. Addition of 15.3 wt% SiC/GNP filler (15/0.3) to pure epoxy increased the thermal conductivity coefficient by over 230%. The samples maintained the electrical insulation properties with electrical conductivity (EC) less than 10−9 S/m. Both fillers reduced the breakdown voltage of the samples. Furthermore, strong filler‐matrix adhesion resulted in a significant 414% improvement in Izod impact strength.Highlights Combining SiC and GNP fillers affects the thermal and electrical properties of epoxy. SiC and GNP synergistically improved the thermal diffusivity and conductivity of epoxy. The prepared composites remained in the range of electrical insulation. The impact strength of composites enhanced more than 400% compared to epoxy.

Adsorption and Thermal Decomposition of Triphenyl Bismuth on Silicon (001).

We investigate the adsorption and thermal decomposition of triphenyl bismuth (TPB) on the silicon (001) surface using atomic-resolution scanning tunneling microscopy, synchrotron-based X-ray photoelectron spectroscopy, and density functional theory calculations. Our results show that the adsorption of TPB at room temperature creates both bismuth-silicon and phenyl-silicon bonds. Annealing above room temperature leads to increased chemical interactions between the phenyl groups and the silicon surface, followed by phenyl detachment and bismuth subsurface migration. The thermal decomposition of the carbon fragments leads to the formation of silicon carbide at the surface. This chemical understanding of the process allows for controlled bismuth introduction into the near surface of silicon and opens pathways for ultra-shallow doping approaches.

Bulk Resistivity of Materials in the Si/FeSi Furnace

The formation of silicon carbide (SiC) and the energy distribution in the furnace are two important parameters in evaluating furnace operations. The energy distribution is determined by the resistivity of the materials in the furnace. This work aims to investigate the bulk resistivity of materials in the silicon (Si) furnace using both partially transformed carbon materials and raw charge mixes. In this study, the impact of temperature, SiC and Si content, and the addition of insulating charge materials are investigated up to 1600 °C using carbon materials as a base. The materials were treated under similar conditions to the industrial furnace. The resistivity of the carbon materials was between 7 and 17 mΩm at 1600 °C, where the char and coal were generally more conductive than the charcoal. The resistivity of partially transformed materials increased with conversion to SiC, and coal with a higher SiC content than 60% had an average resistivity at 1600 °C of around 30 mΩm. The resistivity then began to decrease as elemental Si formed in the pores. Up to 36%, the amount of Si did not affect the measured resistivity, but its presence likely causes a slight decrease. Computed tomography (CT) scans show that the SiC material is not visibly changing or transforming in the crucible during measurement. Comparing the SiC materials to carbon materials and SiC crust from the literature shows that partially transformed SiC will be as conductive or less conductive than carbon at high temperatures. At 1400 °C, the resistivity of the charge mixes that included char, quartz, woodchips, and silica–iron ore showed that the resistivity is directly proportional to the amount of the main conductive material, in this case, char. Temperature, transformation to SiC, and volume of conductive materials appear to influence the resistivity most heavily in this work. At higher temperatures, the effect of SiC content and heat treatment temperature is lessened as the range becomes smaller for these materials.

Enhanced thermal performance of hybrid interface materials supported by 3D thermally conductive SiC framework

The rapid development of microelectronic integration technology is placing increasing demands on the safety performance of electronic devices. Excellent thermal interface materials (TIM) facilitate the dissipation of heat from electronic components, which ensures the safety of electronic equipment. In this work, a three-dimensional (3D) thermally conductive framework is constructed from carbon fibers to form silicon carbide (SiC) in situ. This is followed by vacuum impregnation with paraffin wax (PW) to produce phase change composites (PCCs). The results show that the SiC-based 3D thermally conductive framework has a hierarchical porous network structure, and the PCC indicates enhanced thermal conductivity and good anti-leakage properties. The thermal conductivity of PW @ CF1–Si1-1550 is 0.81 W K−1m−1, which is 4 times that of PW. In addition, the PCC also shows good thermal cycling properties, high thermal storage capacity (179.06 Jg-1), and good insulation properties. The PCC as described in this paper as TIM have considerable application potential in thermal management.

FORMATION OF CRYSTALLINE SiC IN NEAR-SURFACE SILICON LAYERS BY METHOD OF COORDINATED SUBSTITUTION OF ATOMS

In this work, monocrystalline films of silicon carbide were synthesized on the surface of a Si(100) silicon wafer using the method of coordinated substitution of atoms. The films were synthesized at temperatures of 1200 °C and 1300 °C for 20 minutes in a CO gas flow at a pressure of 0.8 Pa. The effect of 1200–1300 °C temperatures on the formation of single- and polycrystalline layers, as well as nanostructured SiC phases in the near-surface region of silicon by the method of atom substitution, is analyzed. The formation of a high-quality crystalline silicon carbide film and the influence of synthesis conditions on the total volume of SiC structural phases, microstructure and nanostructure of the surface are shown. It was found that an increase in temperature from 1200 °C to 1300 °C led to a more intensive formation of silicon carbide and an increase in the number of Si–C bonds by 1.9 times due to an increase in the thickness of the synthesized silicon carbide layer. There is an increase in the proportion of the crystalline phase due to a more intense transformation of the nuclei of nanocrystals into micro- and nanocrystals. Intense processes of penetration of carbon atoms deep into silicon at a temperature of 1300 °C with amorphization of its structure and the formation of Si-C, which can transform into crystalline phases at temperatures above 1300 °C, are assumed. The proportion of the SiC crystalline phase increases to 50.2% of the film volume due to the intensive transformation of nanocrystal nuclei into micro- and nanocrystals. It has been experimentally shown that the formation of various SiC structures on Si (100) occurs in full accordance with the main principles of the method of coordinated substitution of atoms.

Synthesis of silicon carbide nanoparticles from amorphous carbon: Based on the domain structure of electrically calcined anthracite

Based on the domain theory, the domain structure of electrically calcined anthracite was studied for the first time. The carbon microstructure of the electrically calcined anthracite was analyzed using atomic force microscopy (AFM). The analysis revealed that the carbon microstructure comprised microdomains with particle sizes below 30 nm and domains with particle sizes below 200 nm. In addition, non-graphitizable carbon structures formed by partial microdomain and domain structures were difficult to grow. Thus, we successfully synthesized novel β-type silicon carbide (β-SiC) nanoparticles with larger particle sizes below 200 nm and smaller particle sizes below 60 nm using a non-graphitizable carbon composed of carbon nanoparticles as the main raw material. Through calculation and analysis, the synthesis mechanism revealed that due to the presence of highly reactive interfacial regions between the domains of electrically calcined anthracite, silicon first diffused to the highly reactive interface between the domains of electrically calcined anthracite and reacted with the highly active carbon atoms in it to form silicon carbide, resulting in a certain degree of volume expansion. The volume expansion led to the cracking and dispersion of the domains, which further led to mutual diffusion and reaction within the exfoliated domains to generate SiC nanoparticles. And the non-exfoliated SiC nanoparticles generated at the reaction interface on the surface of electrically calcined anthracite were observed by the AFM.

Implementing propagating low- temperature synthesis to produce pure silicon carbide

The results of research into the formation of ultrapure silicon carbide by propagating synthesis are described in the paper. This synthesis provides a reduction of process time and energy costs. It is established that the main structural transition is caused by phase transformations and polymorphism phenomenon in silica (α-SiO 2 to β-SiO 2 transition) which is necessary to produce pure silicon carbide. It is determined that in a given time interval under the influence of imposed conditions and subsequent interaction with silicic acid and active carbon begins spontaneous transition with the formation of ultrapure silicon carbide. The implementation of the proposed technology increases the silicon carbide yield to 95‒99 % with a nanoscale product (40‒60 nm) of 99,99 % purity

Study of silicon production process in ore-smelting furnace and optimization of technological process

This article presents the results of production experiments to optimize the modes of silicon smelting in an industrial arc furnace. The main factors of the melting process are the size of the fractions of the charge components and the temperature regime of heating. The rate of charge heating in the reaction zone in the temperature range from 950 to 14100C has a special effect on productivity. In this temperature range, the formation of refractory silicon carbide on pieces of quartzite was established, which causes a drop in the magnitude of the electric current in the reaction zone and its freezing. The gornisage, which is formed, displaces the electrodes into the zone of greater charge electrical conductivity - up, which leads to an increase in silicon monoxide emissions through the reduced charge layer. Correction of such a process requires an increase in the temperatures in the reaction zone and the duration of the melt. A method has been developed for calculating the size of quartzite fractions, depending on the power of the furnace and the size of the reaction zone. An example of a simplified calculation is proposed.

Tribological behaviour of phenolic formaldehyde polymer matrix composite reinforced with fly-ash and silicon carbide

Polymer composites offer engineers and homeowners a new material alternative. The efficiency boost caused success by adding tiny atoms to the origin has indicated extensive research into polymeric composites. Polymeric composite is moved apiece obvious possessions of silicon carbide particles and flee ruins. This composite material has many uses, for example, mechanical, automobile, sea, apparatuses and bundling. The wear behaviour of the composite material, that is intentional through wear testing, is examined afterwards it is typified utilizing a variety of pressure-to-pressure percentages. The most troublesome synthetic material was silicon carbide. It has Mohs severity grade of 9. Notwithstanding severity, has break logo that make bureaucracy very valuable in caustic wheels. Its extreme warm generated power, high temperature substance, depressed warm growth and resistance, form silicon carbide is important in the assembling of extreme heat blocks and added recalcitrant. It is likewise classification as a semiconductor because it has an energetic conductivity namely corresponding to that of insulating matters and metals.Considering this we projected for integrating silicon carbide and fly ruins be affiliated with Phenolic Formaldehyde sticky substance. The supported polymer composites are manufactured by including cut carefully with sharp instrument method in differing weight percentages in polymer, for instance, 8%, 12% and 16%. The Tribological features, for instance, wear is studied in accordance with the ASTM Standard.

Petrification

Petrification is a process of transformation from cellulose to rock, making it possible to imagine a ceramic artifact with a simple shape, from paper, rope, cotton, wood, or cardboard. It consists of two stages: the infusion of a silica solution into the model, followed by atmospheric pyrolysis. During this firing, carbon, and silica fuse to form silicon carbide, a rigid and abrasive ceramic, technically comparable to that of a diamond. This project—developed by Emile De Visscher in collaboration with scientists from ESPCI (Jérôme Bibette), UPMC (Florence Babonneau), Chimie ParisTech (Philippe Barboux), ENSAD (SACRe, l’Université PSL), and Humboldt Universität (Cluster Matters of Activity) —combines experimental scientific development with research through design to imagine an innovative artisanal manufacturing process. At the heart of the project lies the question of the durability of our forms of knowledge, know-how, and heritage. Petrifaction, as a transmutation of organic matter toward the inorganic, from the vegetal to the mineral, perpetuates ephemeral forms destined to deterioration. At a time when the ecological crisis and capitalism are generating major declines in biological forms (disappearance of species and seed varieties), but also in practices (disappearance of traditional techniques), the question arises of how to keep track of our knowledge and fragile material forms. Beyond its formal technical principle, the process of petrifaction is symbolic in that it invokes a series of cultural contents rooted in many civilizations and regions of the world: in Greek mythology with Medusa, among the Celts with the dolmens, but also in Japanese, Papuan, and pre-Columbian traditions. Ubiquitous in the 18th and 19th centuries, both in connection with the practice of collecting fossils and the development of techniques for petrifying bodies, this process is still very much present in many current cultural forms, such as video games, science-fiction novels, and Hollywood films. This recurrence of petrifaction in the collective imagination refers to fundamental dualities shared between the fantasy of surviving death, the curse of stability, eternal life, or fear of apocalypse. The project thus unfolds as a speculative archaeological proposal, which stabilizes endangered elements for a distant future. The collaboration with Lucile Vareilles and Ophélie Maurus sought to account for this theoretical and historical dimension within the framework of the publication .able. The iconographic element of this project refers us directly to the question of the Anthropocene because it uses firing, certainly energy consuming, to sequester carbon in a land base instead of in the atmosphere. Rather than helplessly endure the relentless accumulation of fossil wastes, plastics, and reinforced concrete, the project explores the possibilities of a collective, and therefore political decision to populate the Anthropocene.

Carbon ion beam induced chemical modification and nano-pyramid growth on Si surface

We report the growth of nano-ripple on, initially smooth Si surface due to chemically guided additional instability generation during 10 keV C+ bombardment at grazing (70°) ion incidence. Also, the transformation of the ripple structure to triangular nano-pyramidal structure at higher ion fluence is investigated in details. It is shown that the chemical nature of the surface changes due to silicon carbide formation at the ion impact sites, and the surface becomes a mixture of Si and SiC. The differential sputtering of Si from pure Si and SiC, generates an additional instability which leads to trigger the ripple pattern on the surface. The variation of height amplitude, lateral correlation length and slope angles of the developed structures are investigated and explained in terms of existing continuum theory. At very high ion fluence the transformation of the structure into three dimensional triangle (pyramidal) is revealed and the mechanism is explained in the light of variation of local ion impact angle and its consequent effects.

Preparation of efficient adsorbent with dual adsorption function based on semi-coke: Adsorption properties and mechanisms

Solid waste oil shale semi-coke (SC) is considered as a potential material for the preparation of adsorbents due to its rich organic and inorganic components. However, the dense structure and the complex form of the components present make it unsatisfactory for adsorption. In this study, using Alkali corrosion under hydrothermal condition, SC was prepared as an adsorbent material PSSC with excellent adsorption performance for both anionic and cationic dyes. The related characterization analysis showed that most of the organic matter and silicates of SC reacted with inorganic matter to form silicon carbide. The specific surface area of PSSC increased significantly (from 7.47 m2/g to 1353.99 m2/g) leading to the maximum adsorption of PSSC on Methylene blue (MB) and Congo red (CR) reached at 974.66 mg/g and 562.41 mg/g, respectively, which far exceeded the adsorption of SC on both dyes. Finally, the adsorption mechanisms were revealed from the structural and energetic perspectives. The results showed that the modification process increased the type and number of adsorption sites, and that these adsorption sites exhibited different capturing abilities for the two dyes with the change of contact temperature.

Laser Induced Graphene/Silicon Carbide: Core–Shell Structure, Multifield Coupling Effects, and Pressure Sensor Applications

AbstractLatest advances have witnessed the laser scribing of various active materials from synthetic polymers to natural sources without masks, post‐treatment, or toxic substances. However, laser induced graphene (LIG) on renewable precursors usually requires flame‐retardant pretreatment and multistep pulsed or defocused irradiation. Laser scribing of silicon carbide (SiC) from polydimethylsiloxane (PDMS) is limited by its high transparency over a broad wavelength range. Here, a structural design strategy is adopted to solve these two dilemmas at the same time, that is, laser scribing of carbonized cloth/PDMS to prepare LIG/SiC composites. Natural cotton cloth is precarbonized and inserted in PDMS substrate to facilitate heat absorption for the in situ formation of SiC, while the soft PDMS attached to the carbonized cloth absorbs heat and isolates oxygen, enabling the conversion of amorphous carbon to LIG. Under these multifield coupling effects, a core–shell LIG/SiC electrode is formed on the carbonized cloth with tunable mass ratio, morphology, and graphene defects. Experimentally, the LIG/SiC pressure sensor exhibits a good sensitivity of 1.91 kPa−1 in the super‐wide sensing range of 0–226.7 kPa. By demonstrating different scenarios such as real‐time monitoring of large body movements, tiny pulses and heartbeats, the flexible pressure sensors hold great promise in wearable electronics.