Formation Of Electric Dipoles Research Articles

Biological template hydrothermal synthesis of hollow La-doped one-dimensional CaMnO3 fibers and their enhanced microwave absorption performance

The advancement of military technology, 5G communication, and electronic equipment has increased the demand for efficient electromagnetic wave absorption materials. Calcium manganate (CaMnO3) is a commonly used dielectric absorber due to its excellent dielectric polarization effect. However, traditional ceramic materials like CaMnO3 have low conductivity, making it difficult to achieve impedance matching and electromagnetic loss simultaneously. In this work, to address this issue and create ideal wave-absorbing materials, one-dimensional La-doped CaMnO3 materials were synthesized using a simple biological template hydrothermal method. By studying the relationship between doping content and electromagnetic parameters, it was found that the La-doped CaMnO3 material exhibited excellent electromagnetic wave absorption properties, with a minimum reflection loss (RLmin) of −73.62 dB and a maximum effective absorption bandwidth of 3.3 GHz in the X-band. The introduction of La elements, which have different electronegativities from Ca ions, altered the electron cloud distribution in the sample, leading to the formation of electric dipoles that disrupt charge distribution and dissipate electromagnetic waves. The dielectric loss in fibrous La-doped CaMnO3 is mainly due to interfacial polarization. The fibrous structure allows for increased contact area with the air medium, while the porous structure introduces air bubbles that alter the dielectric properties between the sample and the air medium. This not only enhances impedance characteristics to some extent but also triggers interfacial polarization. Both of these factors help improve the material's ability to absorb electromagnetic waves. The successful creation of this one-dimensional absorbing material opens up possibilities for developing new one-dimensional absorbing materials using a straightforward method.

Atmospheric pressure uniform dielectric barrier discharge (DBD) in a wide air gap initiated from a narrow starting point

Generating a uniform non-equilibrium plasma in atmospheric pressure air has always been a challenge. It is believed that the maximum spacing for generating a uniform non-equilibrium plasma in atmospheric pressure air, whether using AC or nanosecond pulse drive, is 4 mm. Discharges are always non-uniform when the spacing is greater than 4 mm. In this paper, we propose a new type of dielectric barrier discharge structure to address this challenge. The left end of the structure rapidly increases the discharge spacing from 0.5 mm to 6 mm, while the right side of the main discharge gap maintains a uniform spacing of 6 mm. Nanosecond pulse voltage is used to drive the plasma, an ICCD camera is used to capture the image of the plasma during a discharge pulse cycle, which indicates that a uniform plasma within the 6 mm spacing of the main discharge gap is generated. Upon further reducing the ICCD camera’s exposure time to 20 ns, it is revealed that the uniform plasma is formed due to the rapid propagation of the plasma from left to right at a speed of order of 105 m s−1. Due to the small transverse component of the external electric field, this rapid propagation behavior cannot be due to the external electric field. Therefore, this paper further proposes the hypothesis of electric dipole formation leading to this fast propagation. The hypothesis suggests that the charge separation on the surface of the anode forms an electric dipole, which generates a local discharge at its right end. This local discharge further triggers the discharge in the main gap, and the main gap discharge, in turn, forms a dipole due to charge separation again, by repeating this cycle, the plasma propagates rapidly to the right. Further analysis demonstrates that this dipole can indeed produce a strong electric field of up to 41 kV cm−1 at its right end, which is sufficient to induce a local discharge. Moreover, under such a strong electric field, the electron migration rate can indeed reach 105 m s−1. These findings support the plausibility of this hypothesis.

Fluorinated 2-Phenylethylammonium Spacer Cations for Improved Stability of Ruddlesden–Popper Pb/Sn Halide Perovskites: Insight from First-Principles Calculations

Improving the stability of hybrid halide perovskite solar cells is essential for their commercialization in emerging cutting-edge technology. Here, we report the results of state-of-the-art first-principles calculations to achieve and understand enhancement in the stability of Ruddlesden–Popper (RP) lead/tin halide perovskites with fluorinated 2-phenylethylammonium (PEA) spacer cations. It is found that the substitution of up to five F atoms in the phenyl ring makes C slightly positively charged due to ∼0.5e charge transfer to electronegative F. This leads to the formation of electric dipoles in the spacer cation region and polarization of the charge density. This improves the formation energy and enhances the stability of the layers. The charge transfer makes some of the C 2p orbitals partly empty so that they hybridize with F 2p orbitals near the conduction band minimum. This is interesting for the charge transport perpendicular to the layers. Our study further shows that changing the metal cations Pb with Sn does not affect the orientation of the cation molecules in the pure as well as chemically tuned RP layers whereas changing the halide ions I with Br has an impact on the orientation of the organic molecules. The calculated structures of the layers agree well with the available experimental results and suggest structures of some unexplored layers that would be interesting to fabricate. The calculated electronic structure and optical properties show that the absorption coefficient is high (∼105 cm–1) for the layers having heavily fluorinated spacer cations. Furthermore, we find higher stability and a desirable lower direct band gap for Sn-based green perovskite layers compared to the Pb counterparts. Our results provide computational insight into the surface engineering of RP perovskites for further developments in this fast-growing area.

First-principles study of adsorption and migration of alkali and alkaline earth metals (Rb, Cs, and Ba) on graphene

The adsorption and migration characteristics of Rb, Cs, and Ba on pristine and defective graphene have been systematically investigated by utilizing the density functional theory (DFT) method, which could help address the challenges of developing novel anode materials of thermionic energy converters (TECs). In this work, we found that the work function of the adsorption system is lower as Cs is adsorbed on graphene compared with Rb and Ba, which indicates that the electron emission capability has been greatly improved. Computational results of defective graphene demonstrate that defect sites act as traps for metals. The diffusion near the Stone-Wales defect and vacancy is severely hindered and the migration barrier on the surface of B/O doped graphene is also slightly increased. Particularly, the work functions of all defective graphenes are significantly increased, which is attributed to the decrease in the probability of electric dipole formation and the increase of the absolute cohesive energy. O-containing defects are ubiquitous in graphene due to their low formation energies, and the lowest work function of defective graphene is 2.74 eV, which is reached after Cs adsorption at 2OC defect sites, whereas this is still expected to have detrimental effects on graphene-based anode materials.

Ion Drift and Polarization in Thin SiO2 and HfO2 Layers Inserted in Silicon on Sapphire.

To reduce the built-in positive charge value at the silicon-on-sapphire (SOS) phase border obtained by bonding and a hydrogen transfer, thermal silicon oxide (SiO2) layers with a thickness of 50–310 nm and HfO2 layers with a thickness of 20 nm were inserted between silicon and sapphire by plasma-enhanced atomic layer deposition (PEALD). After high-temperature annealing at 1100 °C, these layers led to a hysteresis in the drain current–gate voltage curves and a field-induced switching of threshold voltage in the SOS pseudo-MOSFET. For the inserted SiO2 with a thickness of 310 nm, the transfer transistor characteristics measured in the temperature ranging from 25 to 300 °C demonstrated a triple increase in the hysteresis window with the increasing temperature. It was associated with the ion drift and the formation of electric dipoles at the silicon dioxide boundaries. A much slower increase in the window with temperature for the inserted HfO2 layer was explained by the dominant ferroelectric polarization switching in the inserted HfO2 layer. Thus, the experiments allowed for a separation of the effects of mobile ions and ferroelectric polarization on the observed transfer characteristics of hysteresis in structures of Si/HfO2/sapphire and Si/SiO2/sapphire.

Local dipole enhancement of space-charge piezophototronic catalysts of core-shell polytetrafluoroethylene@TiO2 nanospheres

This study demonstrates the hydrothermal treatment of core-shell polytetrafluoroethylene (PTFE) nanoparticles decorated with TiO2 (h-PTFE@TiO2); this material exhibits strain-induced local dipole enhancement of the space-charge piezopotential that improves the photocatalytic effect. Under acoustic cavitation, dielectric barrier discharge and electric dipole formation are initiated in voids within the PTFE nanoparticles and at the TiO2–PTFE interface. The h-PTFE@TiO2 nanoparticles (NPs) have exceptionally high catalytic activity in organic dye degradation because of the local dipole enhancement of photoinduced charge separation with a carrier lifetime of 3.14 ns. The observed rate constant of the h-PTFE@TiO2 NPs in the piezophototronic reaction reaches 0.1388 min−1, which is 17 times that of the photocatalytic reaction (0.0084 min−1) and 66 times that of the piezocatalytic reaction (0.0021 min−1). Computational simulation reveals that large strain-induced space charge piezoelectric polarization induces an internal electric field between the unsaturated PTFE (fluorine vacancies) and TiO2 surface. The piezopotential has a critical role in band bending at PTFE-TiO2 interfaces to enhance the electron-hole separation when PTFE is constrained in TiO2 shells. Results of piezoresponse force microscopy reveal that the piezoelectric coefficient d33 of PTFE is approximately 79.77 pCN−1. The findings provide insights into catalytic activity for environmental remediation.

Dynamical Bond Formation in KNi2Se2

AbstractEmphanisis, or the appearance out of nothing, has been used to describe the phenomena of spontaneous atom off‐centering and dipole formation at elevated temperatures in lead chalcogenides. Here, we provide spectroscopic evidence of spontaneous formation of metal‐metal bonds above T∼50 K in the layered metal KNi2Se2. These bonds form zig‐zag chains that lower the local symmetry from tetragonal to monoclinic. Energy‐resolved pair distribution function measurements exclude a pure phonon origin of our observations, and instead imply the existence of extra, slowly fluctuating, Ni−Ni bonds above T=50 K. Density functional theory calculations support this lower symmetry configuration as an instability of tetragonal KNi2Se2. We thus demonstrate that the phenomena of emphansis is not limited to local electric dipole formation, but can also be driven by the formation of metal‐metal bonds.

Dielectric properties, polarization process, and charge transport in granular (FeCoZr)x(Pb(ZrTi)O3)(100−x) nanocomposites near the percolation threshold

This paper presents the research of dielectric properties of (FeCoZr)x(Pb(ZrTi)O3)(100−x) granular metal–dielectric nanocomposites below the percolation threshold. Tested materials have been prepared by using the ion beam sputtering technique in the atmosphere of argon and oxygen. The impedance spectroscopy method has been used to investigate the polarization processes and dielectric relaxation mechanism in the granular nanocomposites. AC measurements in the frequency region of 50 Hz to 1 MHz and measuring temperature range of 81–293 K have been performed. Interfacial, in the low frequency region, and dipolar, in intermediate and high frequency regions, types of polarization processes were observed. The interfacial relaxation process testifies to charge accumulation at the interfaces (grain boundaries) between conductive nanoparticles surrounding an insulative matrix, as well as the space charge region around the contact area between the measurement probes and tested sample. Dipolar polarization corresponds to electric dipole formation after applying to the material an external electric field. The conduction mechanism in the tested material is considered to be hopping carrier exchange and takes place between metallic phase nanograins. It corresponds to the exponential frequency dependence of conductivity. The relaxation mechanism in the (FeCoZr)x(Pb(ZrTi)O3)(100−x) layer has been estimated as a near-Debye process with relaxation time distribution. The nanocomposite exhibits dielectric type and capacitive characteristics in the whole measuring frequency range.

Evidence for new enantiospecific interaction force in chiral biomolecules

Evidence for new enantiospecific interaction force in chiral biomolecules

Modulation of the Al/Cu2O Schottky Barrier Height for p-Type Oxide TFTs Using a Polyethylenimine Interlayer.

We introduced an organic interlayer into the Schottky contact interface to control the contact property. After inserting an 11-nm-thick polyethylenimine (PEI) interlayer between the aluminum (Al) source/drain electrode and the cuprous oxide (Cu2O) channel layer, the Cu2O thin-film transistors (TFTs) exhibited improved electrical characteristics compared with Cu2O TFTs without a PEI interlayer; the field-effect mobility improved from 0.02 to 0.12 cm2/V s, the subthreshold swing decreased from 14.82 to 7.34 V/dec, and the on/off current ratio increased from 2.43 × 102 to 1.47 × 103, respectively. Careful investigation of the contact interface between the source/drain electrode and the channel layer established that the performance improvements were caused by the formation of electric dipoles in the PEI interlayer. These electric dipoles reduced the Schottky barrier height by neutralizing the charges at the metal/oxide semiconductor interface, and the holes passed the reduced Schottky barrier by means of tunneling or thermionic injection. In this way, p-type oxide TFTs, which generally need a noble metal having a high work function as an electrode, were demonstrated with a low-work-function metal. As a basic application for logic circuits, a complementary inverter based on n-type indium-gallium-zinc oxide and p-type Cu2O TFTs was fabricated using only Al source/drain electrodes. This research achieved advances in low-cost circuit design by broadening the electrode metals available for the manufacture of p-type oxide semiconductor-based electronics.

Exotic Dielectric Behaviors Induced by Pseudo-Spin Texture in Magnetic Twisted BilayerSupported by the National Key Research and Development Program of China (Grant No. 2017YFA0303403), the Shanghai Science and Technology Innovation Action Plan (Grant No. 19JC1416700), the National Natural Science Foundation of China (Grant No. 11774092), and the ECNU Multifunctional Platform for Innovation.

Twisted van der Waals bilayers provide an ideal platform to study the electron correlation in solids. Of particular interest is the 30° twisted bilayer honeycomb lattice system, which possesses an incommensurate moiré pattern, and uncommon electronic behaviors may appear due to the absence of phase coherence. Such a system is extremely sensitive to further twist and many intriguing phenomena will occur. Based on first-principles calculations we show that, for further twist near 30°, there could induce dramatically different dielectric behaviors of electron between left and right-twisted cases. Specifically, it is found that the left and right twists show suppressed and amplified dielectric response under vertical electric field, respectively. Further analysis demonstrate that such an exotic dielectric property can be attributed to the stacking dependent charge redistribution due to twist, which forms twist-dependent pseudospin textures. We will show that such pseudospin textures are robust under small electric field. As a result, for the right-twisted case, there is almost no electric dipole formation exceeding the monolayer thickness when the electric field is applied. Whereas for the left case, the system could even demonstrate negative susceptibility, i.e., the induced polarization is opposite to the applied field, which is very rare in the nature. Such findings not only enrich our understanding on moiré systems but also open an appealing route toward functional 2D materials design for electronic, optical and even energy storage devices.

Interface Structure and Transport Properties of Thin-Film Solid-State Batteries with an Epitaxial Cathode

A problem of solid-state Li ion batteries is a relatively low ionic conductivity at the interface between electrodes and electrolytes that limits the charging/discharging rate. For designing the solid-state batteries, understanding the mechanism behind the low interface conductivity is crucial. Investigation of the atomic structure of the interfaces and its relation to the ionic conductivity would be helpful for this purpose. However, atomic-scale observation of the buried interfaces is often difficult in practical batteries which consist of grain aggregates. Recent progress in thin-film deposition techniques of electrodes and electrolyteshas opened a path to study the interface quantitatively. By using an all-in-vacuum battery fabrication system [1], we succeeded in fabricating a very low solid-electrolyte/electrode interface resistance in thin film batteries with an epitaxial cathode. The well-defined crystalline interfaces allow the analysis of atomic-scale structure and its transport properties. For the structure analysis, we used X-ray crystal truncation rod (CTR) scattering which enables the atomic-scale analysis in a non-destructive manner.The analysis of two interfaces will be presented: a solid-electrolyte/electrode interface and an electrode/current collector interface. In the former case, we studied Li(negative electrode)/Li3PO4(solid electrode)/LiCoO2(positive electrode) thin-film Li batteries with low and high (more than 10 times) interface resistances. It turned out that the low-resistance interface has an atomically well-ordered LiCoO2 surface and a disordered surface CoO2 layer can results in the high-resistance interface, demonstrating the crucial importance of the structural ordering in the interfacial layer for realizing a low-resistance interface [2]. In the second topic, we focused on electrode/current collector interface that can also affect the battery performance. We found a drastic improvement of the charging/discharging property by inserting 1.2 nm-thick band insulator LaAlO3 into the LiCoO2 (electrode)/Nb-doped SrTiO3 (current collector) interface. The CTR analysis revealed that a formation of electric dipole at the LaAlO3/Nb-doped SrTiO3 interface, which causes a energy band alignment preferable for the electronic conductance between the electrode and the current collector.

Highly ordered, ultralight three-dimensional graphene-like carbon for high-frequency electromagnetic absorption

The three-dimensional porous structure of a material can trap the propagating electromagnetic waves by multiple reflections and scatterings, thereby improving the microwave absorption properties. The highly ordered and interconnected porous NaY zeolites can serve as the templates to prepare the three-dimensional graphene (3DG). A high defect density of 13.4–23.7 × 1010 cm−2 was obtained in the 3DG due to the incomplete replication. Simultaneously, the broken asymmetry of space charges in the defect sites will lead to the separation of space charges and the formation of electric dipoles, which results in significantly enhanced dielectric performance and microwave absorption. Consequently, owing to the porous structure and high specific surface area, the effective absorption band of the 3DG attains a large width of 14.3 GHz (3.7–18 GHz) with the absorber thicknesses located in 2–5 mm. The microwave absorption performance of 3DG is much superior to that of multilayer graphene with a two-dimensional structure. Hence, this ultralight 3DG can act as a promising microwave absorption material and probably gifts other physical applications in the future.

Splitting of the magnetic monopole pair-creation energy in spin ice

The thermodynamics in spin-ice systems are governed by emergent magnetic monopole excitations and, until now, the creation of a pair of these topological defects was associated with one specific pair-creation energy. Here, we show that the electric dipole moments inherent to the magnetic monopoles lift the degeneracy of their creation process and lead to a splitting of the pair-creation energy. We consider this finding to extend the model of magnetic relaxation in spin-ice systems and show that an electric dipole interaction in the theoretically estimated order of magnitude leads to a splitting which can explain the controversially discussed discrepancies between the measured temperature dependence of the magnetic relaxation times and previous theory. By applying our extended model to experimental data of, various spin-ice systems, we show its universal applicability and determine a dependence of the electric dipole interaction on the system parameters, which is in accordance with the theoretical model of electric dipole formation.

Admittance spectroscopy analysis of dye-sensitised solar cells with host-guest complexes

Objective: The objective of this study was to assess the influence of encapsulation of cis-bis(isothiocyanato)(2,2\'-bipyridyl-4,4\'-dicarboxylato)(4,4\'-di-nonyl-2\'- bipyridyl) ruthenium(II) (Z907 dye) to macrocycle cucurbit[7]uril (CB7) (host) on the performance of nanocrystalline titanium dioxide (nc-TiO2)/ poly3-hexylthiophene (P3HT) heterojunction solar cell. Method: Two solar cells composed of five layers with and without the encapsulation of Z907 dye on the top of TiO2 film were used. The admittance spectroscopy was measured at different frequencies to confirm the modification of the interfacial layers\' properties in solar cells. Findings: The results demonstrated different capacitance responses depending on the voltage applied to the devices. The encapsulated device had a higher capacitance response to forward bias and reverse bias than the non-encapsulated device at the same frequency. The negative capacitance of the two devices was also observed. The results were attributed to an increase in the accumulation of charge carriers and the formation of electric dipoles at the junction which rapidly decreased the capacitance to negative values. Application: This study demonstrated that using encapsulation of dye improved the solar cells\' maximum electric power to 0.14mW/cm2 , while it was 0.04 mW/cm2 in the non-encapsulated solar cells. Keywords: Solar cells; Junction capacitance; X-ray diffraction; SEM micrograph; Geometric capacitance

Experimental Identification of Electric Dipoles Induced by Magnetic Monopoles in Tb2Ti2O7

The fundamental principles of electrodynamics allow an electron carrying both electric monopole (charge) and magnetic dipole (spin) but prohibit its magnetic counterpart. Recently, it was predicted that the magnetic "monopoles" carrying emergent magnetic charges in spin ice systems can induce electric dipoles. The inspiring prediction offers a novel way to study magnetic monopole excitations and magnetoelectric coupling. However, no clear example has been identified up to now. Here, we report the experimental evidence for electric dipoles induced by magnetic monopoles in spin frustrated Tb_{2}Ti_{2}O_{7}. The magnetic field applied to pyrochlore Tb_{2}Ti_{2}O_{7} along the [111] direction, brings out a "3-in-1-out" magnetic monopole configuration, and then induces a subtle structural phase transition at H_{c}∼2.3 T. The transition is made evident by the nonlinear phonon splitting under magnetic fields and the anomalous crystal-field excitations of Tb^{3+} ions. The observations consistently point to the displacement of the oxygen O^{''} anions along the [111] axis which gives rise to the formation of electric dipoles. The finding demonstrates that the scenario of magnetic monopole having both magnetic charge and electric dipole is realized in Tb_{2}Ti_{2}O_{7} and sheds light into the coupling between electricity and magnetism of magnetic monopoles in spin frustrated systems.

Study of surface electric field and photocarrier dynamics in InAs by means of a modified double-pump-pulse terahertz emission method

In this study we report the investigation of terahertz (THz) emission efficiency dynamics in p-type InAs using a double-pump-pulse (DPP) THz emission method. We also suggest a novel modification of the standard DPP method which allows us to measure the indirectly modulated THz pulse. The obtained results reveal that the first optical pulse increases the free carrier concentration and enhances the surface electric field. This field prevents perpendicular but improves parallel to the surface electric dipole formation after sample excitation with the second optical pulse. Our suggested method is shown to be a more precise and sensitive way to study electric fields and photocarrier dynamics in semiconductors after photoexcitation.

Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding

We study covalent bonds between p-doped Si wafers (resistivity ∼10 Ω cm) fabricated on a recently developed 200 mm high-vacuum system. Oxide- and void free interfaces were obtained by argon (Ar) or neon (Ne) sputtering prior to wafer bonding at room temperature. The influence of the sputter induced amorphous Si layer at the bonding interface on the electrical behavior is accessed with temperature-dependent current-voltage measurements. In as-bonded structures, charge transport is impeded by a potential barrier of 0.7 V at the interface with thermionic emission being the dominant charge transport mechanism. Current-voltage characteristics are found to be asymmetric which can tentatively be attributed to electric dipole formation at the interface as a result of the time delay between the surface preparation of the two bonding partners. Electron beam induced current measurements confirm the corresponding asymmetric double Schottky barrier like band-alignment. Moreover, we demonstrate that defect annihilation at a low temperature of 400 °C increases the electrical conductivity by up to three orders of magnitude despite the lack of recrystallization of the amorphous layer. This effect is found to be more pronounced for Ne sputtered surfaces which is attributed to the lighter atomic mass compared to Ar, inducing weaker lattice distortions during the sputtering.

Mixed-dimensional 2D/3D heterojunctions between MoS2 and Si(100).

For utilization of two-dimensional (2D) materials as electronic devices, their mixed-dimensional heterostructures with three-dimensional (3D) materials are receiving much attention. In this study, we have investigated the atomic and electronic structures of the 2D/3D heterojunction between MoS2 and Si(100) using density functional theory calculations; especially, we focus on the contact behavior dependence on the interfacial structures of heterojunctions by considering two types of surface termination of Si(100) surfaces. Calculations show that MoS2 and clean Si(100) form an almost n-type ohmic contact with a very small Schottky barrier height (SBH) due to strong covalent bonds between them, and that the contact between MoS2 and H-covered Si(100) makes a p-n heterojunction with weak van der Waals interactions. Such a difference in contact behaviors can be explained by different electric dipole formation at the heterojunction interfaces. Overall, it is concluded that contact properties can be varied depending on the interfacial structures of 2D(MoS2)/3D(Si) semiconductor heterojunctions.

Remote homoepitaxy of ZnO microrods across graphene layers.

Two-dimensional atomic layered materials (2d-ALMs) are emerging candidates for use as epitaxial seed substrates for transferrable epilayers. However, the micrometer-sized domains of 2d-ALMs preclude their practical use in epitaxy because they cause crystallographically in-plane disordering of the overlayer. Ultrathin graphene can penetrate the electric dipole momentum from an underlying crystal layer to the graphene surface, which then drives it to crystallize the overlayer during the initial growth stage, thus resulting in substantial energy saving. This study demonstrates the remote homoepitaxy of ZnO microrods (MRs) on ZnO substrates across graphene layers via a hydrothermal method. Despite the presence of poly-domain graphene in between the ZnO substrate and ZnO MRs, the MRs were epitaxially grown on a- and c-plane ZnO substrates, whose in-plane alignments were homogeneous within the wafer's size. Transmission electron microscopy revealed a homoepitaxial relationship between the overlayer MRs and the substrate. Density-functional theory calculations suggested that the charge redistribution occurring near graphene induces the electric dipole formation, so the attracted adatoms led to the formation of the remote homoepitaxial overlayer. Due to a strong potential field caused by long-range charge transfer given from the substrate, even the use of bi-layer and tri-layer graphene resulted in remote homoepitaxial ZnO MRs. The effects of substrate crystal planes were also theoretically and empirically investigated. The ability of graphene, which can be released from the mother substrate without covalent bonds, was utilized to transfer the overlayer MR arrays. This method opens a way for producing well aligned, transferrable epitaxial nano/microstructure arrays while regenerating the substrate for cost-saving device manufacturing.