We report the growth of Ge nanostructures and microstructures on ultraclean, highvicinal angle silicon surfaces and show that self-assembled growth at optimumthickness of the overlayer leads to interesting shape transformations, namely fromnanoparticle to trapezoidal structures, at higher thickness values. Thin films ofGe of varying thickness from 3 to 12 ML were grown under ultrahigh vacuumconditions on a Si(5 5 12) substrate while keeping the substrate at a temperature of600 °C. The substrate heating was achieved by two methods: (i) by heating a filamentunder the substrate (radiative heating, RH) and (ii) by passing direct currentthrough the samples in three directions (perpendicular, parallel and at45° to the direction of the substrate). We find irregular, more spherical-like island structuresunder RH conditions. The shape transformations have been found under DCheating conditions and for Ge deposition more than 8 ML thick. The longer sides ofthe trapezoid structures are found to be along irrespective of the DC current direction. We also show the absence of such a shapetransformation in the case of Ge deposition on Si(111) substrates. Scanning transmissionelectron microscopy measurements suggested the mixing of Ge and Si. This has been confirmedwith a quantitative estimation of the intermixing using Rutherford backscatteringspectrometry (RBS) measurements. The role of DC heating in the formation of alignedstructures is discussed. Although the RBS simulations show the presence of a possibleSiOx layer, under the experimental conditions of the present study, the oxide layer would notplay a role in determining the formation of the various structures that were reported here.
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