Floating Film Transfer Method Research Articles

Polarized polymer light-emitting electrochemical cells using polyfluorene and polycaprolactone blend film by floating-film transfer method

Abstract Sandwich-type structured polarized Polymer Light-emitting Electrochemical Cells (PLECs) of poly(9,9-dioctylfluorene) (PFO) successfully fabricated by combination of floating-film transfer method (FTM) and Post-blending ionic liquid (IL) procedure. An ion-solvating polymer, polycaprolactone (PCL), was blended in PFO for improving IL penetration. The PFO:PCL film showed clear optical dichroism due to the PFO backbone orientation. The IL, 1-Ethyl-3-methylimidazolium (trifluoromethylsulfonyl)imide (EMIm-TFSI), easily post-blended into the PFO:PCL blend FTM film without disordering PFO backbone orientation. The fabricated thickness varied PLECs with ITO anode and aluminum cathode were demonstrated distinct anisotropy, whole device area emission and low turn-on voltage compared to PLEDs.

Study on the charge transport behaviour of mxene- polymer nanocomposite-based self-assembled floating films at the air-liquid interface

This study explores the fabrication and charge transport behavior of MXene-polymer nanocomposite-based self-assembled floating films at the air-liquid interface. Utilizing ultrasonic dispersion of MXene nanosheets was integrated into a DPP-TTT polymer matrix, significantly enhancing the alignment and crystallization of the polymer chains. The films were fabricated using a unidirectional floating film transfer method (UFTM), which proved to be both simple and cost-effective. UV–visible and grazing incidence X-ray diffraction (GIXD) analyses confirmed increased π–π stacking and improved structural arrangement within the nanocomposites. Organic field-effect transistors (OFETs) fabricated from these films demonstrated that a 3% MXene inclusion resulted in the highest mobility, measuring 3.1 cm2V-1s-1 with an on-off ratio in the order of 104, compared to 1.3 cm2V-1s-1 in pristine DPP-TTT films. However, further increases in MXene content reduced mobility, emphasizing the importance of precise compositional tuning.

Clarifying the Dominant Role of Crystallinity and Molecular Orientation in Differently Processed Thin Films of Regioregular Poly(3-hexylthiophene).

Conjugated polymers (CPs) offer the potential for sustainable semiconductor devices due to their low cost and inherent molecular self-assembly. Enhanced crystallinity and molecular orientation in thin films of solution-processable CPs have significantly improved organic electronic device performance. In this work, three methods, namely spin coating, dip coating, and unidirectional floating-film transfer method (UFTM), were utilized with their parametric optimization for fabricating RR-P3HT films. These films were then utilized for their characterization via optical and microstructural analysis to elucidate dominant roles of molecular orientation and crystallinity in controlling charge transport in organic field-effect transistors (OFETs). OFETs fabricated by RR-P3HT thin films using spin coating and dip coating displayed field-effect mobility (μ) of 8.0 × 10-4 cm2V-1s-1 and 1.3 × 10-3 cm2V-1s-1, respectively. This two-time enhancement in µ for dip-coated films was attributed to its enhanced crystallinity. Interestingly, UFTM film-based OFETs demonstrated μ of 7.0 × 10-2 cm2V-1s-1, >100 times increment as compared to its spin-coated counterpart. This superior device performance is attributed to the synergistic influence of higher crystallinity and molecular orientation. Since the crystallinity of dip-coated and UFTM-thin films are similar, ~50 times improved µ of UFTM thin films, this suggests a dominant role of molecular orientation as compared to crystallinity in controlling the charge transport.

Improved ammonia sensitivity and broadband photodetection by using PBTTT-C14/WS2-QDs nano-heterojunction based thin film transistor

An ambient temperature broadband photo-detector and ammonia (NH3) gas sensor devices are developed with PBTTT-C14/WS2-QDs heterojunction thin film. This composite thin film of PBTTT-C14 conjugate polymer and hydrothermally synthesized WS2-QDs have been deposited by high yield and cost-effective ‘floating film transfer method’ (FTM), which works as a channel (p-type) of the thin film transistor (TFT). To determine the NH3 sensing behavior of the TFT, different concentrations of analyte (0.5–20 ppm) have been exposed on the channel of the TFT, which shows the response of ∼ 50 % at 10 ppm ammonia concentration that is significantly higher than PBTTT-C14 only TFT. This improvement is made possible by the NH3-responsive depleted layer of polymer/QDs heterojunction, which varies widely in the presence of ammonia. As a consequence, the ON/OFF ratio, carrier mobility and threshold voltage (Vth) of the device changes in a wider range. Besides, this TFT based gas sensor is also highly selective to the other interfering gases. In addition to NH3 gas sensitivity, This TFT also shows very high photosensitivity under white light illumination that enhances ‘ON’ and ‘OFF’ current of the device by ∼ 2.2 and 70 times, respectively under one sun white light illumination, whereas Vth of the device is shifted by ∼ 22 V. Besides, the device shows quite fast response/ recovery time under NH3 gas exposure and light illumination.

High-Density, Nonvolatile, Flexible Multilevel Organic Memristor Using Multilayered Polymer Semiconductors.

Nonvolatile organic memristors have emerged as promising candidates for next-generation electronics, emphasizing the need for vertical device fabrication to attain a high density. Herein, we present a comprehensive investigation of high-performance organic memristors, fabricated in crossbar architecture with PTB7/Al-AlOx-nanocluster/PTB7 embedded between Al electrodes. PTB7 films were fabricated using the Unidirectional Floating Film Transfer Method, enabling independent uniform film fabrication in the Layer-by-Layer (LbL) configuration without disturbing underlying films. We examined the charge transport mechanism of our memristors using the Hubbard model highlighting the role of Al-AlOx-nanoclusters in switching-on the devices, due to the accumulation of bipolarons in the semiconducting layer. By varying the number of LbL films in the device architecture, the resistance of resistive states was systematically altered, enabling the fabrication of novel multilevel memristors. These multilevel devices exhibited excellent performance metrics, including enhanced memory density, high on-off ratio (>108), remarkable memory retention (>105 s), high endurance (87 on-off cycles), and rapid switching (∼100 ns). Furthermore, flexible memristors were fabricated, demonstrating consistent performance even under bending conditions, with a radius of 2.78 mm for >104 bending cycles. This study not only demonstrates the fundamental understanding of charge transport in organic memristors but also introduces novel device architectures with significant implications for high-density flexible applications.

Fabrication of All-Polymer Organic Phototransistors Utilizing Oriented P3HT Thin Films Prepared by Unidirectional Floating Film Transfer Method

Fabrication of All-Polymer Organic Phototransistors Utilizing Oriented P3HT Thin Films Prepared by Unidirectional Floating Film Transfer Method

Fabrication of highly sensitive flexible phototransistors through a unidirectional floating film transfer method using P4T2F-HD thin films

Fabrication of highly sensitive flexible phototransistors through a unidirectional floating film transfer method using P4T2F-HD thin films

High-Performance Organic Electrochemical Transistors Achieved by Optimizing Structural and Energetic Ordering of Diketopyrrolopyrrole-Based Polymers.

For optimizing steady-state performance in organic electrochemical transistors (OECTs), both molecular design and structural alignment approaches must work in tandem to minimize energetic and microstructural disorders in polymeric mixed ionic-electronic conductor films. Herein, a series of poly(diketopyrrolopyrrole)s bearing various lengths of aliphatic-glycol hybrid side chains (PDPP-mEG; m = 2-5) is developed to achieve high-performance p-type OECTs. PDPP-4EG polymer with the optimized length of side chains exhibits excellent crystallinity owing to enhanced lamellar and backbone interactions. Furthermore, the improved structural ordering in PDPP-4EG films significantly decreases trap state density and energetic disorder. Consequently, PDPP-4EG-based OECT devices produce a mobility-volumetric capacitance product ([µC*]) of 702 F V-1 cm-1 s-1 and a hole mobility of 6.49 ± 0.60 cm2 V-1 s-1 . Finally, for achieving the optimal structural ordering along the OECT channel direction, a floating film transfer method is employed to reinforce the unidirectional orientation of polymer chains, leading to a substantially increased figure-of-merit [µC*] to over 800 F V-1 cm-1 s-1 . The research demonstrates the importance of side chain engineering of polymeric mixed ionic-electronic conductors in conjunction with their anisotropic microstructural optimization to maximize OECT characteristics.

Large area polymer thin film towards high-sensitivity BGBC-OFET based phototransistor

With the expansion of organic electronics, organic field-effect transistors (OFETs) are broadly used in electronic devices and logic circuits. In these, OFET-based phototransistors were recently developed for detecting the light signal. Developing better field-effect mobility and sensitivity in bottom gate bottom contact (BGBC) OFET-based phototransistors, however, is still a difficulty. This is because the low mobility of most organic photoresponsive materials limits the efficiency of transporting and collecting charge carriers. In the current work, a poly (3-hexyl thiophene) based organic phototransistor was studied. For increasing the device performance, a thin layer of Self-assembled monolayer (SAM) is formed on the dielectric interface of SiO2. The ribbon-shaped floating film transfer method (FTM) is utilized in the fabrication of thin film. The prepared film shows the average OFETs mobility, Ion/Ioff ratio (μ) 2 × 10−2 Cm2/Vs, 104 respectively under air and dark conditions. This result is more than one order higher in the BGBC configuration reported by the conventional FTM. Further, illumination of light (λ = 550 nm, Pin = 1 mW/cm2) shows photosensitivity of ∼100 and responsivity of 22 AW1.

Facile Fabrication and Characterization of Oriented and Multilayer Thin Films of Solution Processable Conjugated Polymer

Fabrication of multilayer thin films of solution‐processable organic semiconductors has great potential in organic electronics, but adopting existing thin‐film techniques to attain this is highly cumbersome. Herein, a unique unidirectional floating film transfer method has been utilized, which allows the facile fabrication of large area and oriented thin films of conjugated polymers. This method has successfully fabricated and characterized multilayer and oriented thin films of regioregular poly(3‐hexylthiophene) without having any adverse effect on the underlying layers. Optical characterizations reveal that fabricated thin films are anisotropic with a dichroic ratio of 2.2 having a single layer thickness of 14.5 nm. X‐ray diffraction results demonstrate uniformity in the crystallinity of the multilayered thin film with comparable crystallite size and interplanar spacing with purely edge‐on molecular orientation. The organic field effect transistor fabricates using multilayer thin films and also exhibits a uniform and saturated charge carrier mobility of about 0.1 cm2 V−1 s−1.

Enhancing the Performance of Organic Phototransistors Based on Oriented Floating Films of P3HT Assisted by Al-Island Deposition.

The fabrication of high-performance Organic Phototransistors (OPTs) by depositing Al-islands atop Poly(3-hexylthiophene) (P3HT) thin film coated using the unidirectional floating-film transfer method (UFTM) has been realized. Further, the effect of Al-island thickness on the OPTs' performance has been intensively investigated using X-ray photoelectron spectroscopy, X-ray Diffraction, Atomic force microscopy and UV-Vis spectroscopy analysis. Under the optimized conditions, OPTs' mobility and on-off ratio were found to be 2 × 10-2 cm2 V-1 s-1 and 3 × 104, respectively. Further, the device exhibited high photosensitivity of 105, responsivity of 339 A/W, detectivity of 3 × 1014 Jones, and external quantum efficiency of 7.8 × 103% when illuminated with a 525 nm LED laser (0.3 mW/cm2).

Vertical Distribution of Molecular Orientation and Its Implication on Charge Transport in Floating Films of Conjugated Polymers

Fabrication of uniform and oriented thin films of conjugated polymers (CPs) with controlled thickness is essential for the implementation of organic devices. Over the years, unidirectional floating film transfer method (UFTM) has emerged as a facile technique for the fabrication of oriented thin films but its distribution of orientation in vertical (thickness) direction has not been explored yet. To investigate this, thin films of nonregioregular poly(3‐hexylthiophene) are fabricated using UFTM with different concentrations of CPs to obtain thickness variation from 11 to 47 nm. Thin films of 4% and 9% polymer solution have similar dichroic ratio of 5.5 but have an appreciable difference in film thickness of 12 and 47 nm where thicker films are disordered as probed by polarized absorption spectra. Organic field‐effect transistors fabricated using thinner films (12 nm) exhibit a saturated charge carrier mobility of 2.3 × 10−3cm2 V−1 s−1, an order of magnitude higher than its thicker (47 nm) counterpart. This difference in device performance can be attributed to the fact that charge transport is principally governed by the top polymer surface at air–polymer interface, which is found to be more disordered owing to the vertical distribution of orientation.

Highly Responsive Al/PTB7/Si/Al Vertical Structure-Based White Light Photodetector Using FTM Method

This article reports a p-type Poly [[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b’]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl) carbonyl] thieno [3,4-b] thiophenediyl ]] (PTB7) thin film based Al/PTB7/Si/Al vertical structure for white light detection application. The thin film of PTB7 polymer was deposited via a low-cost and facile floating-film transfer method (FTM). The morphology of the PTB7 film is analyzed by tapping mode Atomic Force Microscopy (AFM) which gives an average surface roughness as ~0.703 nm. The maximum responsivity and detectivity of the fabricated device were obtained as ~146.13 mA/W and ~4.137 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">10</sup> Jones at ~0.228 mW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> white light intensity under a reverse bias of -2 V. The rise/fall time of the fabricated sensing device was measured as ~0.016/~0.112 s respectively.

Enhancement of ammonia gas sensitivity and selectivity by depleted layer of PBTTT-C14/MoS2-QDs heterojunction based thin film transistor

A highly sensitive, room temperature operating ammonia (NH3) gas sensor has been fabricated by using PBTTT-C14/MoS2-QDs heterojunction based organic thin film transistor (OTFT). Thin film of PBTTT-C14/MoS2-QDs has been fabricated by low cost and high yield ‘floating film transfer method’ (FTM). Initially, hydrothermally synthesized MoS2 quantum dots (QDs) were added in PBTTT-C14 polymer to make a composite ink, which was used for film fabrication. This polymer/QDs based film has been used as a channel of a top contact-bottom gated organic thin film transistor. Various concentration of NH3 ranging from 0.5 to 50 ppm has been exposed on the channel to determine the sensitivity and the selectivity of the device. For comparison, a reference OTFT has been fabricated under the same condition by using pristine PBTTT-C14 thin film. It has been observed that the response of the polymer/QDs heterojunction device is ∼ 85 % at 50 ppm which is ∼ 3 times higher compared to reference device in higher concentration range of NH3. This enhancement becomes possible due to the NH3 sensitive depletion layer of polymer/QDs heterojunction. This OTFT sensor shows high selectivity to the NH3 gas with good linearity to the concentration, which can fulfill basic requirements for practical utilization.

Highly Sensitive and Selective Room Temperature-Operated NO2 Sensor Based on Eco-Friendly Water Processed Low Voltage Operable OFET

We report a highly sensitive and selective room temperature (RT) operated nitrogen dioxide (NO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{{2}}{)}$ </tex-math></inline-formula> Gas Sensor based on Low voltage Operable poly[2,5-(2-octyldodecyl)-3,6-diketopyrrolopyrrole-alt-5,5-(2,5di(thien-2-yl)thieno [3,2-b]-thiophene)] (DPP-DTT) based organic field effect transistors (OFETs). We have used water-induced aluminum oxide (AlO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{x}{)}$ </tex-math></inline-formula> as gate dielectric and the floating film transfer method (FTM) using water as a liquid substrate to lift the self-assembled film of DPP-DTT. The fabricated OFET devices were operated at a low voltage of −3 V. The device was tested for low-voltage Gas sensing applications. The DPP-DTT OFETs-based Gas sensor showed a response of 2217.4% for 200 ppb and 8445.5% for 1.4 ppm of NO2, respectively at (RT, 25 °C) and relative humidity (RH) of 55%. The respective percentage changes in mobility and threshold voltage were 1210.81 and 121.92 for 1.4 ppm of NO2. The DPP-DTT-based NO2 sensor recorded a response and recovery time of 34 and 168 s for 1.4 ppm NO2. The maximum temperature in the whole fabrication process was not more than 260 °C. A selective study with SO2, NH3, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{H}_{{2}}\text{S}$ </tex-math></inline-formula> , <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{H}_{{2}}$ </tex-math></inline-formula> , and CO2 was also done which establishes the high selectivity of the sensor for NO2. This report combines the benefits of the eco-friendly processing technique for AlOx dielectric, floating film transfer from water substrate instead of commonly used toxic ethylene glycol, and superior gas sensing properties of FTM film.

High field-effect mobility in oriented thin films of D-A type semiconducting polymers by engineering stable interfacial system

Conjugated polymers (CPs) have emerged as excellent organic semiconducting materials for flexible electronic applications. CPs exhibit a notably fast carrier transport along their main π-conjugated backbone followed by inter-chain hopping compelling the need to form large and ordered domains in thin films. Therefore, the formation of larger domains, along with their orientation, is critical in controlling the electrical properties of CP-based organic electronic devices. However, controlling the molecular ordering along with the formation of large aggregates is a challenge. In this work, the unidirectional floating film transfer method (UFTM) has been utilized to prepare oriented thin films of CPs, which is a highly facile, cost-effective and material utilization efficient technique. We have demonstrated that extent and direction of molecular orientation in the fabricated thin films can be tuned along with the higher degree of aggregation. The rheological aspects, especially viscosity, play a significant role in determining molecular ordering along with the formation of these large aggregates. Active control of viscosity to achieve a stable interfacial viscous system is paramount to achieving this, resulting in a very high mobility of 12.4 cm2V−1s−1.

Bistable Resistive Memory Switches fabricated by Floating Thin Films of Conjugated Polymers

The layer-by-layer (LBL) fabrication of conjugated polymer (CPs) thin films while preserving their microstructural features by solution processing is highly desired for compact and flexible electronic circuits. However, it is cumbersome and challenging owing to the unavoidable damage to the underlying layers. To circumvent this issue, the unidirectional floating-film transfer method (UFTM) was utilized for the LBL fabrication of oriented CP thin films on the orthogonal liquid surfaces. Further, resistive bistable memory switches were fabricated by sandwiching a layer of metal nanostructures between the LBL-fabricated oriented CP thin films. The resistive switching phenomena were realized by utilizing the applied bias-dependent charge trapping, holding, and recombination on the available states at vacuum-deposited aluminum nanostructures. The effect of CP backbone conformation on the vertical charge transport was also analyzed via a comparative study of three thiophene-based polymers namely RR-P3HT, PBTTT, and PTB-7. It was revealed that CPs with relatively fewer hydrophobic side chains was more favorable for the facile vertical charge transport due to its preferred face-on conformation on the hydrophilic liquid substrate used in UFTM. It was demonstrated that a non-volatile bistable resistive memory switch fabricated using UFTM-processed oriented thin films of PTB-7 exhibited a remarkably high on-off ratio of 1.5 × 106 with high durability.

Introduction of graphene oxide nanosheets in self-oriented air-stable poly(3-hexylthiophene-2,5-diyl) to enhance the ammonia gas sensing of a p-channel thin film transistor

A self-assembled highly oriented P3HT (Poly(3-hexylthiophene-2,5-diyl))/GO (Graphene oxide) nanocomposite-based p-channel organic field-effect transistor (OFET) for real-time ammonia sensing has been fabricated and characterized on a p++ (highly boron-doped) silicon substrate at room temperature (∼25 °C). A low-cost facile floating film transfer method has been adopted to fabricate the sensing channel of OFET with optimized and uniform thickness (∼25 nm). The electrical characterizations and NH3 sensing performance of the P3HT/GO nanocomposite OFET with palladium electrode have been characterized and compared with pristine P3HT-based OFET. It is demonstrated that the polymer nanocomposite-based OFET with Pd electrode has a relatively high response of ∼63% at 80 ppm NH3 gas. A reduction of 60.41% in field-effect mobility (0.0551 cm2/ V. sec. to 0.02181 cm2/V. sec.) and a 29.4% change in threshold voltage (−4.758 V to −6.157 V) has been observed by varying the NH3 gas concentration over 0–80 ppm. It has an improved response time of ∼44 s and recovery time of ∼82 s due to improved crystallinity and grain size of the sensing layer. All the electrical characterizations and sensing measurements have been done at RT and 55% relative humidity.

Improving vertical charge transport in organic Schottky diodes via interface engineering of large-area conducting polymer thin films fabricated on hydrophilic liquid surface of tunable surface energy

Molecular orientation and stacking genre proved to be one of the decisive factors for the performance of conducting polymer (CP) based electronic devices. In this context, harnessing the key advantages of the ribbon shaped “floating-film transfer method” (FTM) along with an interfacial engineering approach has been utilized for molecular rearrangement in polymer thin-films formed on the surface of a high surface energy hydrophilic liquid mixture. In this novel subphase modified floating-film transfer method (SM-FTM), dodecyl benzene sulfonic acid (DBSA) has been used to control the molecular backbone stacking proximate to the solution-liquid interface and regioregular-poly(3-hexylthiophen-2,5-diyl) (rr-P3HT) was used as the model CP to probe the polymer-DBSA interaction. The molecular arrangements in microcrystalline domains, electronic band structures, and the evolution of surface texture at the solution-liquid interface have been investigated through multiple characterization tools. After that, the electrical performances of Schottky barrier diodes (SBDs) were studied in an ITO/P3HT/AlOx/Al sandwiched structure and a dramatic enhancement of rectification ratio up to 8.2 × 106 at ± 6 V was achieved. Further, an analytical model for SM-FTM, developed using lubrication theory and thin-film dynamics, has also been presented to elucidate the polymer spreading dynamics and the mechanism of molecular rearrangement at the interface.

Self-Assembled Au/P3HT, High-k Bilayer Dielectric-Based Solution Processed Low Voltage OTFT for Multiparametric Ammonia Sensor at Room Temperature

A self-assembled, fully solution-processed, bilayer (TiO2/HfO2) dielectric-based thin film transistor (TFT) has been fabricated and explored for highly sensitive ammonia gas at room temperature (RT—25 °C). The bilayer dielectric film has been grown over a heavily boron-doped silicon substrate (p++ Si), and the thickness of each layer has been optimized by spin coating rotation speed and spin time to find a high-quality gate oxide. The obtained dielectric has a high areal capacitance of 0.926 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{F}$ </tex-math></inline-formula> /cm2, low rms roughness of 0.914 nm, and low leakage current density of ~1 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu \text{A}$ </tex-math></inline-formula> /cm2, high dielectric constant of ~42, which are much more favorable for the high-performance organic TFT (OTFT). The incorporation of the TiO2 layer in between the p++ Si and HfO2 layer enhances the areal capacitance and minimizes the rms roughness (TiO2 minimizes the no. of interface trap states at the dielectric/semiconductor interface) of the bilayer dielectric film, thereby improving the charge transfer mechanism. The developed high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${k}$ </tex-math></inline-formula> bilayer solution-processed dielectric layer has been utilized to develop a low voltage operated (−1.5 V) OTFT for ammonia (NH3) gas at RT. The fabricated OTFT device utilized the solution-processed floating film transfer method (FTM) to grow the Au(gold) doped P3HT film as a sensing/organic semiconductor channel (OSC) layer. The Au/P3HT sensing layer shows a quick response/recovery time (5/17 s), with a high sensing response of 55% (5 ppm) toward the NH3 analyte. The study aims to find a low-voltage, solution-processed, cost-efficient OTFT device for a high-performance gas sensor at RT.