Flexible Light-emitting Diodes Research Articles

Pyrene-encapsulated light-emitting π-conjugated polymer with excellent ozone tolerance capacity for large-area and flexible ultra-deep-blue PLEDs with CIEy = 0.08

Emerging flexible polymer light-emitting diodes (PLEDs) are crucial for the development of information display and solid lighting. However, achieving ultrastable light-emitting polymers with robust emissions and outstanding chem-physic stabilities, remains a serious challenge due to the intrinsic oxidative and degrading properties of aromatic units. Herein, we present a universal and convenient pyrene-encapsulation strategy to enhance the ozone tolerance capacity of deep-blue light-emitting conjugated polymers (PPyDPF) for the narrowband flexible PLEDs. More intestingly, compared to the comparison polymers, PPyDPF showed a lower free volume ratio of 71.78 %, facilitating dense interchain packing, which contributes to its excellent ozone tolerance capacity. Large-area PLEDs were fabricated, which exhibit ultra-deep-blue emission with a FWHM of 40 nm and Commission internationale de l’éclairage (CIE) coordinates of (0.16, 0.08). The demonstrated potential for application in light-emitting devices underscores the significance of this approach, providing an effective strategy for developing aging-resistant light-emitting conjugated polymers for optoelectronic applications.

Efficient perovskite light-emitting diodes on a flexible substrate.

The surface properties of target substrates are crucial for the in situ crystallization and growth of metal halide perovskite films fabricated by the anti-solvent method. In this work, a high-quality quasi-2D perovskite film with various-n phases is fabricated on the commonly used poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) by introducing a branched polyethylenimine (PEI) modifying layer. PEI suppresses the influence of acidic surface of the PEDOT:PSS and regulates the components of the perovskite film, increasing the proportion of large-n phases. Additionally, PEI reduces the formation of defects in perovskite films, leading to higher photoluminescence quantum efficiency and longer photoluminescence lifetime. Based on this high-quality perovskite film, a flexible light-emitting diode with an ultimate current efficiency of 63.2 cd/A is achieved, nearly twofold higher than that of the device (35.1 cd/A) without a PEI modifying layer.

Intrinsically stretchable fully π-conjugated polymer film via fluid conjugated molecular external-plasticizing for flexible light-emitting diodes

Fully π-conjugated polymers with rigid aromatic units are promising for flexible optoelectronic devices, but their inherent brittleness poses a challenge for achieving high-performance, intrinsically stretchable fully π-conjugated polymer. Here, we are establishing an external-plasticizing strategy using semiconductor fluid plasticizers (Z1 and Z2) to enhance the optoelectronic, morphological, and stretchable properties of fully π-conjugated polymer films for flexible light-emitting diodes. The synergistic effect of hierarchical structure and optoelectronic properties of Z1 in poly(9,9-di-n-octylfluorene-alt-benzothiadiazole) (F8BT) films enable excellent stretchable deformability (~25%) and good conductivity. PLEDs based on F8BT/Z1 films show stable electroluminescence and efficiency under 15% stretch and 100 cycles at 10% strain, revealing outstanding stress tolerance. This strategy is also improving the stretchable properties of polymers like poly(9,9-di-n-octylfluorenyl-2,7-diyl) (PFO) and poly(2-methoxy-5(2′-ethyl)hexoxy-phenylenevinylene) (Super Yellow), demonstrating its general applicability. Therefore, this strategy can provide effective guidance for designing high-performance stretchable fully π-conjugated polymers films for flexible electronic devices.

UV-A Flexible LEDs Based on Core-Shell GaN/AlGaN Quantum Well Microwires.

Nanostructured ultraviolet (UV) light sources represent a growing research field in view of their potential applications in wearable optoelectronics or medical treatment devices. In this work, we report the demonstration of the first flexible UV-A light emitting diode (LED) based on AlGaN/GaN core-shell microwires. The device is based on a composite microwire/poly(dimethylsiloxane) (PDMS) membrane with flexible transparent electrodes. The electrode transparency in the UV range is optimized: namely, we demonstrate that single-walled carbon nanotube electrodes provide a stable electrical contact to the membrane with high transparency (70% at 350 nm). The flexible UV-A membrane demonstrating electroluminescence around 345 nm is further applied to excite Zn-Ir-BipyPDMS luminophores: the UV-A LED is combined with the elastic luminophore-containing membrane to produce a visible amber emission from 520 to 650 nm. The obtained results pave the way for flexible inorganic light-emitting diodes to be employed in sensing, detection of fluorescent labels, or light therapy.

High-Energy–Density Fiber Supercapacitors Based on Transition Metal Oxide Nanoribbon Yarns for Comprehensive Wearable Electronics

AbstractFiber supercapacitors (FSs) based on transition metal oxides (TMOs) have garnered considerable attention as energy storage solutions for wearable electronics owing to their exceptional characteristics, including superior comfortability and low weights. These materials are known to exhibit high energy densities, high specific capacitances, and fast redox reactions. However, current fabrication methods for these structures primarily rely on chemical deposition, often resulting in undesirable material structures and necessitating the use of additives, which can degrade the electrochemical performance of such structures. Herein, physically deposited TMO nanoribbon yarns generated via delamination engineering of nanopatterned TMO/metal/TMO trilayer arrays are proposed as potential high-performance FSs. To prepare these arrays, the target materials were initially deposited using a nanoline mold, and subsequently, the nanoribbon was suspended through selective plasma etching to obtain the desired twisted yarn structures. Because of the direct formation of TMOs on Ni electrodes, a high energy/power density and excellent electrochemical stability were achieved in asymmetric FS devices incorporating CoNixOy nanoribbon yarns and graphene fibers. Furthermore, a triboelectric nanogenerator, pressure sensor, and flexible light-emitting diode were synergistically combined with the FS. The integration of wearable electronic components, encompassing energy harvesting, energy storage, and powering sensing/display devices, is promising for the development of future smart textiles. Graphical Abstract

Elastic-Plastic Fully π-Conjugated Polymer with Excellent Energy Dissipation Capacity for Ultra-Deep-Blue Flexible Polymer Light-Emitting Diodes with CIEy = 0.04.

Emerging intrinsically flexible fully π-conjugated polymers (FπCPs) are a promising functional material for flexible optoelectronics, attributed to their potential interchain interpenetration and entanglement. However, the challenge remains in obtaining elastic-plastic FπCPs with intrinsic robust optoelectronic property and excellent long-term and cycling deformation stability simultaneously for applications in deep-blue flexible polymer light-emitting diodes (PLEDs). This study, demonstrates a series of elastic-plastic FπCPs (P1-P4) with an excellent energy dissipation capacity via side-chain internal plasticization for the ultra-deep-blue flexible PLEDs. First, the freestanding P1 film exhibited a maximum fracture strain of 34.6%. More interestingly, the elastic behavior is observed with a low strain (≤10%), and the stretched film with a high deformation (>10%) attributed to plastic processing revealed the robust capacity to realize energy absorption and release. The elastic-plastic P1 film exhibits outstanding ultra-deep-blue emission, with an efficiency of 56.38%. Subsequently, efficient PLEDs are fabricated with an ultra-deep-blue emission of CIE (0.16, 0.04) and a maximum external quantum efficiency of 1.73%. Finally, stable and efficient ultra-deep-blue electroluminescence are obtained from PLEDs based on stretchable films with different strains and cycling deformations, suggesting excellent elastic-plastic behavior and deformation stability for flexible electronics.

Flexible Substrate-Compatible and Efficiency-Improved Quantum-Dot Light-Emitting Diodes with Reduced Annealing Temperature of NiOx Hole-Injecting Layer

The growing demand for wearable and attachable displays has sparked significant interest in flexible quantum-dot light-emitting diodes (QLEDs). However, the challenges of fabricating and operating QLEDs on flexible substrates persist due to the lack of stable and low-temperature processable charge-injection/-transporting layers with aligned energy levels. In this study, we utilized NiOx nanoparticles that are compatible with flexible substrates as a hole-injection layer (HIL). To enhance the work function of the NiOx HIL, we introduced a self-assembled dipole modifier called 4-(trifluoromethyl)benzoic acid (4–CF3–BA) onto the surface of the NiOx nanoparticles. The incorporation of the dipole molecules through adsorption treatment has significantly changed the wettability and electronic characteristics of NiOx nanoparticles, resulting in the formation of NiO(OH) at the interface and a shift in vacuum level. The alteration of surface electronic states of the NiOx nanoparticles not only improves the carrier balance by reducing the hole injection barrier but also prevents exciton quenching by passivating defects in the film. Consequently, the NiOx-based red QLEDs with interfacial modification demonstrate a maximum current efficiency of 16.1 cd/A and a peak external quantum efficiency of 10.3%. This represents a nearly twofold efficiency enhancement compared to control devices. The mild fabrication requirements and low annealing temperatures suggest potential applications of dipole molecule-modified NiOx nanoparticles in flexible optoelectronic devices.

Highly Potent Transparent Passive Cooling Coating via Microphase-Separated Hydrogel Combining Radiative and Evaporative Cooling.

Transparent passive cooling materials can cool targets environmentally without interfering with light transmission or visual information reception. They play a prominent role in solar cells and flexible display cooling. However, achieving potent transparent cooling remains challenging, because light transmission is accompanied by thermal energy. Here we propose to realize effective passive cooling in transparent materials via a microscale phase separation hydrogel film. The poly(N-isopropylacrylamide-co-acrylamide) hydrogel presents light transmittance of >96% and infrared emissivity as high as 95%. The microphase-separated structure affords a higher enthalpy of evaporation. The film is highly adhesive. In field applications, it reduces temperatures by 9.14 °C compared to those with uncovered photovoltaic panels and 7.68 °C compared to those for bare flexible light-emitting diode screens. Simulations indicate that energy savings of 32.76-51.65 MJ m-2 year-1 can be achieved in typical tropical monsoon climates and temperate continental climates. We expect this work to contribute to energy-efficient materials and a carbon-neutral society.

Inkjet‐Printed Red‐Emitting Flexible LEDs Based on Sustainable Inks of Layered Tin Iodide Perovskite

AbstractInkjet printing has emerged as a promising technique for the fabrication of halide perovskite (HP) thin films, as it enables precise and controlled deposition of the perovskite ink on a variety of substrates. One main advantage of inkjet printing for the fabrication of HP thin films is its ability to produce uniform films with controlled thickness and high coverage, which is critical for achieving high‐performance devices. Additionally, inkjet printing allows for the deposition of patterned thin films, enabling the fabrication of complex device architectures such as light‐emitting diodes (LEDs). In this work, flexible LEDs based on inkjet printed Pb‐free HP thiophene‐ethylammonium tin iodide (TEA2SnI4) are produced that has gained attention as a potential alternative to Pb‐based HPs in optoelectronic devices due to its lower toxicity, environmental impact, and high performance. The role of ink solutions is compared using pure solvents: toxic dimethyl formamide (DMF) and more eco‐friendly dimethyl sulfoxide (DMSO). Red‐emitting devices (λmax = 633 nm) exhibit, in ambient conditions, a maximum external quantum efficiency (EQEmax) of 0.5% with a related brightness of 21 cd m−2 at 54 mA cm−2 for DMSO‐based LEDs. The environmental impacts of films prepared with DMSO‐based solvents ensure only 40% of the impact caused by DMF.

Optimizing Ag films towards efficient flexible quantum-dot light-emitting diodes

Metal film electrodes are frequently adopted in flexible quantum-dot light-emitting diodes (FQLEDs) to form microcavity structures, which accelerate the recombination of excitons and thereby enhancing the efficiency of devices, especially under high driving current density. However, metal films prepared by thermal evaporation grow according to the Volmer-Weber nucleation mechanism, thereby resulting in the formation of numerous metal islands on the target substrate. The serious leakage current and light scattering (hence weakened microcavity effect) caused by these islands lead to inefficient FQLEDs. Here we fabricated a highly uniform and smooth Ag-based flexible electrode by utilizing an ultrathin polyethyleneimine as the nucleation-inducing seed layer. A smooth surface with a root-mean-square of approximately 3.7 nm and an ultralow sheet resistance of 3.65 Ω sq−1 have been obtained for the Ag film with a thickness of only 16 nm. Thus, a high-efficiency FQLED is achieved with the maximum external quantum efficiency up to 25.6 %. Furthermore, this device exhibits ultralow efficiency roll-off, characterized by the external quantum efficiency of over 20 % across an extremely wide luminance range, from 300 to 160,000 cd m−2, meeting all display and lighting requirements.

NiCo2O4 Nanowires Immobilized on Nitrogen-Doped Ti3C2Tx for High-Performance Wearable Magnesium-Air Batteries.

Flexible magnesium (Mg)-air batteries provide an ideal platform for developing efficient energy-storage devices toward wearable electronics and bio-integrated power sources. However, high-capacity bio-adaptable Mg-air batteries still face the challenges in low discharge potential and inefficient oxygen electrodes, with poor kinetics property toward oxygen reduction reaction (ORR). Herein, spinel nickel cobalt oxides (NiCo2O4) nanowires immobilized on nitrogen-doped Ti3C2Tx (NiCo2O4/N-Ti3C2Tx) are reported via surface chemical-bonded effect as oxygen electrodes, wherein surface-doped pyridinic-N-C and Co-pyridinic-N moieties accounted for efficient ORR owing to increased interlayer spacing and changed surrounding environment around Co metals in NiCo2O4. Importantly, in polyethylene glycol (PVA)-NaCl neutral gel electrolytes, the NiCo2O4/N-Ti3C2Tx-assembled quasi-solid wearable Mg-air batteries delivered high open-circuit potential of 1.5V, good flexibility under various bent angles, high power density of 9.8mW cm-2, and stable discharge duration to 12h without obvious voltage drop at 5mA cm-2, which can power a blue flexible light-emitting diode (LED) array and red smart rollable wearable device. The present study stimulates studies to investigate Mg-air batteries involving human-body adaptable neutral electrolytes, which will facilitate the application of Mg-air batteries in portable, flexible, and wearable power sources for electronic devices.

Preparation of environmentally stable graphene circuits for flexible light-emitting diodes using patterned laser direct writing

Flexible technology incorporating materials and manufacturing processes has attracted the attention of researchers and commercial entities. The study showed that using a laser to reduce graphene oxide patterns from a graphene-based composite film was an effective method for creating highly conductive flexible circuits for light-emitting diodes. The composite of graphene oxides/polyimide (GO/PI) could be a precursor for a flexible reduced graphene circuit by optimizing the ratio of GO/PI to 50 wt% GO and adjusting the focus depth to 13 % and packed density to 10 using a low-powered semiconductor laser. The laser effectively reduced GO into graphene and removed the oxygen-containing groups, resulting in a significant increase in carbon content from 72.58 % (C/O ratio of ∼ 3.20) to 83.43 % (C/O ratio of ∼ 5.96). It achieved a low resistance of the circuit at 19.76 Ω/sq while maintaining the stable flexibility of the polymer matrix, enabling a substrate-integrated circuit without any packaging in the air for flexible electronic devices. The demonstrated flexible circuit for light-emitting diodes showed good reliability and flexibility, enduring bending at 60 degrees over 150 cycles in 30 min. This versatile technique provided an innovating method for flexible graphene-based electronic circuits through digital patterned laser engraving in research and industrial applications.

Flexible and Stretchable Light-Emitting Diodes and Photodetectors for Human-Centric Optoelectronics.

Optoelectronic devices with unconventional form factors, such as flexible and stretchable light-emitting or photoresponsive devices, are core elements for the next-generation human-centric optoelectronics. For instance, these deformable devices can be utilized as closely fitted wearable sensors to acquire precise biosignals that are subsequently uploaded to the cloud for immediate examination and diagnosis, and also can be used for vision systems for human-interactive robotics. Their inception was propelled by breakthroughs in novel optoelectronic material technologies and device blueprinting methodologies, endowing flexibility and mechanical resilience to conventional rigid optoelectronic devices. This paper reviews the advancements in such soft optoelectronic device technologies, honing in on various materials, manufacturing techniques, and device design strategies. We will first highlight the general approaches for flexible and stretchable device fabrication, including the appropriate material selection for the substrate, electrodes, and insulation layers. We will then focus on the materials for flexible and stretchable light-emitting diodes, their device integration strategies, and representative application examples. Next, we will move on to the materials for flexible and stretchable photodetectors, highlighting the state-of-the-art materials and device fabrication methods, followed by their representative application examples. At the end, a brief summary will be given, and the potential challenges for further development of functional devices will be discussed as a conclusion.

Flexible Perovskite Light‐Emitting Diodes: Characteristics and Performance

AbstractFuture displays need to be stretchable, bendable, and wearable to match consumers’ needs for convenience, portable equipment, and real‐time information display. The development of flexible light source components, like flexible light‐emitting diodes (LEDs), is urgently required to fulfill these needs. Metal halide perovskites, known for their excellent optoelectronic properties and ductility, are considered the most promising light‐emitting materials for high‐definition displays, and their outstanding advantage is that the metal halide perovskites would be achieved by solution process under low temperature (<150 °C), which is especially good for the flexible organic substrates to maintain high conductivity during fabrication of flexible LEDs. In recent years, flexible perovskite LEDs have made significant progress, but still face a great deal of difficulties, obstacles, and great challenges. Herein, the mechanical properties of perovskite materials are examined and the failures for perovskite‐based flexible optoelectronic devices under strain are discussed. The authors then focus on optimizing each functional layer and the recent advancement in flexible perovskite LEDs is summarized. Finally, a brief outlook on the challenges faced by flexible perovskite LEDs and their possible future development is provided.

Enhancement of orange emission in terbium-doped lead-free halide perovskite for flexible functional fibers and light-emitting diodes

In recent years, all-inorganic perovskites have attracted considerable research attention. However, the advancement of lead-based perovskites has encountered substantial challenges, redirecting current research efforts toward lead-free alternatives. In this study, we synthesized novel Cs4MnBi2Cl12 perovskite crystals at 80 °C. Furthermore, Tb3+ ions were introduced to enhance the fluorescence properties and stability of the as-prepared perovskite crystals (PCs). The photoluminescence quantum yield (PLQY) of Tb3+-doped PCs was 25.45 % (∼598 nm), making a two-fold increase compared with the original PCs. In the PCs, [BiCl6]3− octahedrons serve as energy collectors, generating excitons, while [MnCl6]4− octahedrons function as luminescence centers of the receptor. Owing to their entirely inorganic composition, the PCs exhibited exceptional stability under sunlight and across a wide range of temperatures. Finally, we applied the PCs to fiber composite paper and an light-emitting diode (LED) device, which retained their specific stability after the modification. The findings of this study offer nover insight for incorporating perovskites into fiber applications and optoelectronic devices.

Single-crystalline GaN microdisk arrays grown on graphene for flexible micro-LED application

We report the growth of single-crystalline GaN microdisk arrays on graphene and their application in flexible light-emitting diodes (LEDs). Graphene layers were directly grown on c-sapphire substrates using chemical vapor deposition and employed as substrates for GaN growth. Position-controlled GaN microdisks were laterally overgrown on the graphene layers with a micro-patterned SiO2 mask using metal–organic vapor-phase epitaxy. The as-grown GaN microdisks exhibited excellent single crystallinity with a uniform in-plane orientation. Furthermore, we fabricated flexible micro-LEDs by achieving heteroepitaxial growth of n-GaN, In x Ga1−x N/GaN multiple quantum wells, and p-GaN layers on graphene-coated sapphire substrates. The GaN micro-LED arrays were successfully transferred onto bendable substrates and displayed strong blue light emission under room illumination, demonstrating their potential for integration into flexible optoelectronic devices.

Universal selective transfer printing via micro-vacuum force

Transfer printing of inorganic thin-film semiconductors has attracted considerable attention to realize high-performance soft electronics on unusual substrates. However, conventional transfer technologies including elastomeric transfer printing, laser-assisted transfer, and electrostatic transfer still have challenging issues such as stamp reusability, additional adhesives, and device damage. Here, a micro-vacuum assisted selective transfer is reported to assemble micro-sized inorganic semiconductors onto unconventional substrates. 20 μm-sized micro-hole arrays are formed via laser-induced etching technology on a glass substrate. The vacuum controllable module, consisting of a laser-drilled glass and hard-polydimethylsiloxane micro-channels, enables selective modulation of micro-vacuum suction force on microchip arrays. Ultrahigh adhesion switchability of 3.364 × 106, accomplished by pressure control during the micro-vacuum transfer procedure, facilitates the pick-up and release of thin-film semiconductors without additional adhesives and chip damage. Heterogeneous integration of III-V materials and silicon is demonstrated by assembling microchips with diverse shapes and sizes from different mother wafers on the same plane. Multiple selective transfers are implemented by independent pressure control of two separate vacuum channels with a high transfer yield of 98.06%. Finally, flexible micro light-emitting diodes and transistors with uniform electrical/optical properties are fabricated via micro-vacuum assisted selective transfer.

Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy.

In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal-organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p-n junction μCs with InGaN heterostructures.

Flexible Quantum-Dot Light-Emitting Diodes Using Embedded Silver Mesh Transparent Electrodes Manufactured by an Ultraprecise Deposition Method.

Transparent conductive electrodes (TCEs) fabricated onto flexible substrates are crucial parts of organic-light-emitting diodes (OLEDs), which are vastly utilized for display and lightning applications. Indium tin oxide (ITO), which is so far the most popular material for transparent and conductive electrodes, is found to be an unsuitable candidate for flexible devices mostly due to its brittleness. Here, we present a novel approach for the fabrication of transparent, conductive, and flexible electrodes for optoelectronic applications made of silver metal mesh by an ultraprecise deposition (UPD) method. The fabricated mesh exhibits an 80% (λ = 550 nm) optical transmittance and a sheet resistance of 11 Ω/sq. The Ag-mesh embedded into the polymer is implemented as an anode for a quantum-dot light-emitting diode (QLED) in order to assess its performance. The fabricated QLED is characterized by the maximum external quantum efficiency (EQE) of 2% and a current efficiency (CE) of 6 cd/A, reaching the maximum luminance (L) of 3200 cd/m2 at a current density of 100 mA/cm2. This method shows a fast and relatively simple approach to fabricate optoelectronic devices without the need for special treatment and sophisticated equipment.

Wafer-Scale Transferrable GaN Enabled by Hexagonal Boron Nitride for Flexible Light-Emitting Diode.

Epitaxy growth and mechanical transfer of high-quality III-nitrides using 2D materials, weakly bonded by van der Waals force, becomes an important technology for semiconductor industry. In this work, wafer-scale transferrable GaN epilayer with low dislocation density is successfully achieved through AlN/h-BN composite buffer layer and its application in flexible InGaN-based light-emitting diodes (LEDs) is demonstrated. Guided by first-principles calculations, the nucleation and bonding mechanism of GaN and AlN on h-BN is presented, and it is confirmed that the adsorption energy of Al atoms on O2 -plasma-treated h-BN is over 1eV larger than that of Ga atoms. It is found that the introduced high-temperature AlN buffer layer induces sufficient tensile strain during rapid coalescence to compensate the compressive strain generated by the heteromismatch, and a strain-relaxation model for III-nitrides on h-BN is proposed. Eventually, the mechanical exfoliation of single-crystalline GaN film and LED through weak interaction between multilayer h-BN is realized. The flexible free-standing thin-film LED exhibits ≈66% luminescence enhancement with good reliability compared to that before transfer. This work proposes a new approach for the development of flexible semiconductor devices.