Field Of Ion Implantation Research Articles

Electron cyclotron resonance ion source for high currents of mono- and multicharged ion and general purpose unlimited lifetime application on implantation devices

The electron cyclotron resonance (ECR) ion sources were originally developed for high energy physic applications. They are used as injectors on linear accelerators and cyclotrons to further increase the particle energy via high charge state ions. This ECR technology is well suited for sources placed on a high voltage platform where ac power available is limited by insulated transformers. The PANTECHNIK family of ion source with its wide range of ion beam (various charge states with various beam currents) offers new possibilities and perspectives in the field of ion implantation. In addition to all these possibilities, the PANTECHNIK ion sources have many other advantages like: a very long lifetime without maintenance expense, good stability, efficiency of ionization close to 100% (this improves the lifetime of the pumping system and other equipment), the possibility of producing ion beams with different energies, and a very good reproducibility. The main characteristics of sources like Nanogan or SuperNanogan will be recalled. We will especially present the results obtained with the new Microgan 10 GHz source that can be optimized for the production of high currents of monocharged ion, including reactive gas like BF3 (2 mA e of B+) or medium currents of low charge state like 0.5 mA e of Ar4+. The latest results obtained with Microgan 10 GHz show that it is possible to drive the source up to 30 mA e of total current, with an emittance of 150 π mm mrad at 40 kV and also to maintain the production of multicharged ions like Ar8+.

Single-beam thermowave analysis of ion implanted and laser annealed semiconductors

A single-beam thermowave technique is described, based on a two-frequency modulation of the laser beam used for both excitation and detection. The differential frequency content of the laser beam is used as a measure of the photothermal response. This technique provides frequency conversion to the low-frequency region and, to a certain degree, phase sensitivity without applying the lock-in detection method. By using a modulation set-up comprising two acousto-optical modulators and by applying a balance detector arrangement, an intermodulation content of 10-7 for zero response and a noise of 10-7 Hz-1/2 could be achieved. The new single-beam technique yields substantial evidence in the field of ion implantation and laser annealing of semiconductors, such as the dose of implanted species, annealing threshold, the defects generated by the ultrafast solidification and the homogeneity of the laser beam applied for irradiation.

Development of ion implantation equipment in the USSR

A retrospective review of the development of ion implantation equipment in the USSR is presented and modern design philosophies are highlighted. The main developments made by Soviet scientists in the field of ion implantation over the past 30 years are reviewed.

Reconstruction of three-dimensional range distributions by a modified tomographic technique

First, an overview of the present state of art of imaging of three-dimensional particle (or damage) distributions in the field of ion implantation is given. Usually, the direct measurement of three-dimensional distributions in the field of ion implantation is restricted to cases when the impinging ion beam diameter is small against the size of the corresponding distributions, i.e., to ion energies above typically 100 MeV and to microbeams of a few μm diameter. To gain information also for lower ion energies without the restriction in the beam diameter, a modified tomographic reconstruction technique has been developed recently by us and is described here in detail. Three-dimensional distributions are reconstructed from a number of one-dimensional depth profiles, implanted under various angles. Competing algorithms for the solution are discussed. For the mathematical technique chosen, some consistency tests are presented. Good accuracy of a sufficient number of input profiles is vital for the quality of the three-dimensional reconstruction

Present status of ion implantation in non-semiconductor materials in China

Since 1978 several institutions in Beijing and Shanghai have been working in the field of ion implantation in non-semiconductor materials. The field has developed rapidly in China: at present there are 15 institutions working in this field, and two national conferences and one international symposium have been held on this subject. These will be reviewed here. The applications of ion implantation technology to the non-semiconductor industry will be reviewed. The successful experiments carried out in China in the areas of application of ion beams to produce superhard materials, biomedical materials and electrical materials will be introduced. A brief introduction will be given of the Chinese work in the field of ion-beam-induced amorphization and quasicrystalline phase formation.

Review of 400 kV and 500 kV systems for ion implantation and analysis

System description and specification of highly flexible modular systems suitable for use in the field of ion implantation and analysis of semiconductors, metals, polymers and ceramics.

Ionization-enhanced diffusion: Ion implantation in semiconductors

A model for the diffusion of implanted interstitials during implantation is introduced and shown to be able to account for the tails observed in ion profiles. It is argued that mechanisms of ionization-enhanced diffusion can explain some of the anomalous diffusion mechanisms observed in semiconductors. Indications for the existence of such mechanisms in the field of ion implantation in semiconductors are discussed.

Important unanswered questions—1970

Abstract This paper was given as the opening address at the 1970 Albany International Conference on Radiation Effects in Semiconductors, and it attempts to establish a general overview of the field by concentrating on recent research developments and important unanswered questions. The continuing importance of impurity-defect interactions, of microscopic defect identification, and of the necessity for more theoretical calculations are emphasized. The rapid development of the field of ion implantation and its close relationship with radiation effects studies are pointed out. It is predicted that research in compound semiconductors will increase rapidly with close beneficial interaction with ion implantation studies.