Field-effect Heterostructure Research Articles

Correction to Electronic Modulation of Near-Field Radiative Transfer in Graphene Field Effect Heterostructures.

Correction to Electronic Modulation of Near-Field Radiative Transfer in Graphene Field Effect Heterostructures.

Electronic Modulation of Near-Field Radiative Transfer in Graphene Field Effect Heterostructures.

Manipulating heat flow in a controllable and reversible manner is a topic of fundamental and practical interest. Numerous approaches to perform thermal switching have been reported, but they typically suffer from various limitations, for instance requiring mechanical modulation of a submicron gap spacing or only operating in a narrow temperature window. Here, we report the experimental modulation of radiative heat flow by electronic gating of a graphene field effect heterostructure without any moving elements. We measure a maximum heat flux modulation of 4 ± 3% and an absolute modulation depth of 24 ± 7 mW m-2 V-1 in samples with vacuum gap distances ranging from 1 to 3 μm. The active area in the samples through which heat is transferred is ∼1 cm2, indicating the scalable nature of these structures. A clear experimental path exists to realize switching ratios as large as 100%, laying the foundation for electronic control of near-field thermal radiation using 2D materials.

Nonlocal Aharonov–Bohm conductance oscillations in an asymmetric quantum ring

We investigate ballistic transport and quantum interference in a nanoscale quantum wire loop fabricated as a GaAs/AlGaAs field-effect heterostructure. Four-terminal measurements of current and voltage characteristics as a function of top gate voltages show negative bend resistance as a clear signature of ballistic transport. In perpendicular magnetic fields, phase-coherent transport leads to Aharonov–Bohm conductance oscillations, which show equal amplitudes in the local and the nonlocal measurement at a temperature of 1.5 K and above. We attribute this observation to the symmetry of the orthogonal cross junctions connecting the four quantum wire leads with the asymmetric quantum wire ring.

Charged Excitons in Self-assembled Quantum Dots

ABSTRACTWe have succeeded in generating highly charged excitons in InAs self-assembled quantum dots by embedding the dots in a field-effect heterostructure. We discover an excitonic Coulomb blockage: over large regions of gate voltage, the exciton charge remains constant. We present here a summary of the emission properties of the charged excitons.