Few-layer Devices Research Articles

Defects Contributing to Hysteresis in Few-Layer and Thin-Film MoS2 Memristive Devices.

Molybdenum disulfide, a two-dimensional material extensively explored for potential applications in non-von Neumann computing technologies, has garnered significant attention owing to the observed hysteresis phenomena in MoS2 FETs. The dominant sources of hysteresis reported include charge trapping at the channel-dielectric interface and the adsorption/desorption of molecules. However, in MoS2 FETs with different channel thicknesses, the specific nature and density of defects contributing to hysteresis remain an intriguing aspect requiring further investigation. This study delves into memristive devices with back-gate modulated channel layers based on CVD-deposited flake-based and thin-film-based MoS2 FETs, with a few-layer (FL) and thin-film (TF) channel thickness. Analysis of current-voltage (I-V) and conductance-frequency (Gp/ω-f) measurements led to the conclusion that the elevated hysteresis observed in TF MoS2 devices, as opposed to FL devices, stems from a substantial contribution from intrinsic defects within the channel volume, surpassing that of interface defects. This study underscores the significance of considering both intrinsic defects within the bulk and the interface defects of the channel when analyzing hysteresis in MoS2 FETs, particularly in TF FETs. The selection between FL and TF MoS2 devices depends on the requirements for memristive applications, considering factors such as hysteresis tolerance and scaling capabilities.

Topological materials discovery from crystal symmetry

Topological materials discovery has evolved at a rapid pace over the past 15 years following the identification of the first nonmagnetic topological insulators (TIs), topological crystalline insulators (TCIs) and 3D topological semimetals (TSMs). Most recently, through complete analyses of symmetry-allowed band structures — including the theory of topological quantum chemistry (TQC) — researchers have determined crystal-symmetry-enhanced Wilson-loop and complete symmetry-based indicators for nonmagnetic topological phases, leading to the discovery of higher-order TCIs and TSMs. The recent application of TQC and related methods to high-throughput materials discovery has revealed that over half of the known stoichiometric, solid-state, nonmagnetic materials are topological at the Fermi level, over 85 per cent of the known stoichiometric materials host energetically isolated topological bands, and just under two-thirds of the energetically isolated bands in known materials carry the stable topology of a TI or TCI. In this Review, we survey topological electronic materials discovery in nonmagnetic crystalline solids from the prediction of the first 2D and 3D TIs to the recently introduced methods that have facilitated large-scale searches for topological materials. We also discuss future venues for the identification and manipulation of solid-state topological phases, including charge-density-wave compounds, magnetic materials, and 2D few-layer devices. Solid-state materials have emerged as a platform for probing and manipulating topological phases of matter. This Review surveys topological materials discovery in nonmagnetic crystalline solids, focusing on the role of crystal symmetry and geometry in topological material predictions.

Te-Vacancy-Induced Surface Collapse and Reconstruction in Antiferromagnetic Topological Insulator MnBi2Te4.

MnBi2Te4 is an antiferromagnetic topological insulator that has stimulated intense interest due to its exotic quantum phenomena and promising device applications. The surface structure is a determinant factor to understand the magnetic and topological behavior of MnBi2Te4, yet its precise atomic structure remains elusive. Here we discovered a surface collapse and reconstruction of few-layer MnBi2Te4 exfoliated under delicate protection. Instead of the ideal septuple-layer structure in the bulk, the collapsed surface is shown to reconstruct as a Mn-doped Bi2Te3 quintuple layer and a MnxBiyTe double layer with a clear van der Waals gap in between. Combined with first-principles calculations, such surface collapse is attributed to the abundant intrinsic Mn-Bi antisite defects and the tellurium vacancy in the exfoliated surface, which is further supported by in situ annealing and electron irradiation experiments. Our results shed light on the understanding of the intricate surface-bulk correspondence of MnBi2Te4 and provide an insightful perspective on the surface-related quantum measurements in MnBi2Te4 few-layer devices.

Ultrafast Photocurrent and Absorption Microscopy of Few-Layer Transition Metal Dichalcogenide Devices That Isolate Rate-Limiting Dynamics Driving Fast and Efficient Photoresponse

Despite inherently poor interlayer conductivity, photodetectors made from few-layer devices of 2D transition metal dichalcogenides (TMDs) such as WSe$_2$ and MoS$_2$ can still yield a desirably fast ($\leq$90 ps) and efficient ($\epsilon$$>$40\%) photoresponse. By combining ultrafast photocurrent (U-PC) and transient absorption (TA) microscopy, the competing electronic escape and recombination rates are unambiguously identified in otherwise complex kinetics. Both the U-PC and TA response of WSe$_2$ yield matching interlayer electronic escape times that accelerate from 1.6 ns to 86 ns with applied $E$-field to predict the maximum device PC-efficiency realized of $\sim$44\%. The slope of the escape rates versus $E$-field suggests out-of-plane electron and hole mobilities of 0.129 and 0.031 cm$^2$/V$s$ respectively. Above $\sim$10$^{11}$ photons/cm$^{2}$ incident flux, defect-assisted Auger scattering greatly decreases efficiency by trapping carriers at vacancy defects. Both TA and PC spectra identify a metal-vacancy sub-gap peak with $\sim$5.6 ns lifetime as a primary trap capturing carriers as they hop between layers. Synchronous TA and U-PC microscopy show the\ net PC collected is modelled by a kinetic rate-law of electronic escape competing against the linear and nonlinear Auger recombination rates. This simple rate-model further predicts the PC-based dynamics, nonlinear amplitude and efficiency, $\epsilon$ over a 10$^5$ range of incident photon flux in few-layer WSe$_2$ and MoS$_2$ devices.

Current Rerouting Improves Heat Removal in Few-Layer WSe2 Devices.

Few-layer (FL) transition-metal dichalcogenides have drawn attention for nanoelectronics applications due to their improved mobility, owing to the partial screening of charged impurities at the oxide interface. However, under realistic operating conditions, dissipation leads to self-heating, which is detrimental to electronic and thermal properties. We fabricated a series of FL-WSe2 devices and measured their I-V characteristics, while their temperatures were quantified by Raman thermometry and simulated from first principles. Our tightly integrated electrothermal study shows that Joule heating leads to a significant layer-dependent temperature rise, which affects mobility and alters the flow of current through the stack. This causes the temperatures in the top layers to increase dramatically, degrading their mobility and causing the current to reroute to the bottom of the FL stack where thermal conductance is higher. We discover that this current rerouting phenomenon improves heat removal because the current flows through layers closer to the substrate, limiting the severity of self-heating and its impact on carrier mobility. We also observe significant lateral heat removal via the contacts because of longer thermal healing length in the top layers and explore the optimum number of layers to maximize mobility in FL devices. Our study will impact future device designs and lead to further improvements in thermal management in van der Waals (vdW)-based devices.

Anisotropic magnetocaloric effect in Fe3\u2212xGeTe2

We present a comprehensive study on anisotropic magnetocaloric porperties of the van der Waals weak-itinerant ferromagnet Fe3−xGeTe2 that features gate-tunable room-temperature ferromagnetism in few-layer device. Intrinsic magnetocrystalline anisotropy is observed to be temperature-dependent and most likely favors the long-range magnetic order in thin Fe3−xGeTe2 crsytal. The magnetic entropy change ΔSM also reveals an anisotropic characteristic between H//ab and H//c, which could be well scaled into a universal curve. The peak value -Delta {S}_{M}^{{max }} of 1.20 J kg−1 K−1 and the corresponding adiabatic temperature change ΔTad of 0.66 K are deduced from heat capacity with out-of-plane field change of 5 T. By fitting of the field-dependent parameters of -Delta {S}_{M}^{{max }} and the relative cooling power RCP, it gives -{rm{triangle }}{S}_{M}^{{max }} ∝ Hn with n = 0.603(6) and RCP ∝ Hm with m = 1.20(1) when H//c. Given the high and tunable Tc, Fe3−xGeTe2 crystals are of interest for fabricating the heterostructure-based spintronics device.

Enhancing sensitivity to ambient refractive index with tunable few-layer graphene/hBN nanoribbons

Refractive index (RI) sensing helps to identify biomolecules and chemicals in the mid-infrared range for drug discovery, bioengineering, and environmental monitoring. In this paper, we numerically demonstrate an electrically tunable RI sensor with ultrahigh sensitivity using a three-layer graphene nanoribbon array separated by hexagonal boron nitride (hBN). Unlike the weak resonance in single-layer graphene nanoribbons, a much stronger plasmon resonance featuring a higher-quality factor can be excited in the graphene/hBN few-layer ribbon array. Simultaneously, the high purity of graphene on hBN results in an outstanding charge mobility above 4×104 cm2·V−1·s−1 at 300 K, which allows a larger modulation depth. The interaction between the locally enhanced field around graphene ribbons and its surrounding analyte leads to ultrahigh sensitivity (4.207 μm/RIU), with the figure of merit reaching approximately 58. Moreover, this ultrasensitive detector could selectively work in different wavebands by controlling gate voltages applied to graphene. These merits of ultrahigh sensitivity and electrical tunability are major advances compared to previous RI sensors, paving a way toward ultrasensitive detection using graphene/hBN few-layer devices.

Anisotropic magnetic entropy change in Cr2X2Te6(X=Siand Ge)

Intrinsic, two-dimensional (2D) ferromagnetic semiconductors are an important class of materials for spintronics applications. Cr$_2$X$_2$Te$_6$ (X = Si and Ge) semiconductors show 2D Ising-like ferromagnetism, which is preserved in few-layer devices. The maximum magnetic entropy change associated with the critical properties around the ferromagnetic transition for Cr$_2$Si$_2$Te$_6$ $-\Delta S_M^{max} \sim$ 5.05 J kg$^{-1}$ K$^{-1}$ is much larger than $-\Delta S_M^{max} \sim$ 2.64 J kg$^{-1}$ K$^{-1}$ for Cr$_2$Ge$_2$Te$_6$ with an out-of-plane field change of 5 T. The rescaled $-\Delta S_M(T,H)$ curves collapse onto a universal curve independent of temperature and field for both materials. This indicates similar critical behavior and 2D Ising magnetism, confirming the magnetocrystalline anisotropy that could preserve the long-range ferromagnetism in few-layers of Cr$_2$X$_2$Te$_6$.

Spectroscopy of bulk and few-layer superconducting NbSe2 with van der Waals tunnel junctions

Tunnel junctions, an established platform for high resolution spectroscopy of superconductors, require defect-free insulating barriers; however, oxides, the most common barrier, can only grow on a limited selection of materials. We show that van der Waals tunnel barriers, fabricated by exfoliation and transfer of layered semiconductors, sustain stable currents with strong suppression of sub-gap tunneling. This allows us to measure the spectra of bulk (20 nm) and ultrathin (3- and 4-layer) NbSe2 devices at 70 mK. These exhibit two distinct superconducting gaps, the larger of which decreases monotonically with thickness and critical temperature. The spectra are analyzed using a two-band model incorporating depairing. In the bulk, the smaller gap exhibits strong depairing in in-plane magnetic fields, consistent with high out-of-plane Fermi velocity. In the few-layer devices, the large gap exhibits negligible depairing, consistent with out-of-plane spin locking due to Ising spin–orbit coupling. In the 3-layer device, the large gap persists beyond the Pauli limit.