Thin Film Ferroelectric Materials Research Articles

Ferroelectric frontiers: Navigating phase portraits, chaos, multistability and sensitivity in thin-film dynamics

This research includes the study of the non-linear dynamics of thin-film ferroelectric materials governed by an equation of wave dynamics within the material. This equation plays a key role in both physics and the study of aqueous flow. The work is planned as examining the symmetries group analysis drops, studying the dynamical system features through bifurcation phase portraits, and carrying dynamic phenomena in chaos theory. Diverse techniques are taken, such as Lyapunov exponent, 2D, and 3D phase portraits, Poincaré maps, time series analysis, and sensitivity to multistability under the different conditions of the initial state. In addition, the study involves using the extended hyperbolic function method to obtain the general analytical solutions via which various kinds of solitary wave solutions are produced including trigonometric and hyperbolic functions and periodic, bright, and singular soliton solutions. These solutions are followed by a list of constraint conditions in the form of equations. Visual data of 2D, 3D, and contour plots are presented, with parameters carefully set to reflect various scenarios. Sensitivity analysis is performed using alternative initial conditions, and stability analysis is demonstrated graphically. To fully grasp the dynamic features of these systems and accurately predict outcomes, it is essential to advance new technologies and methodologies that can further enhance our understanding and predictive capabilities in complex systems.

The fractional solitary wave profiles and dynamical insights with chaos analysis and sensitivity demonstration

This work investigates the dynamics of solitary waves in a thin-film ferroelectric material model, an essential component of optical systems. The study recognizes the limitations of the inverse scattering transform in solving the Cauchy problem for this conformable thin-film ferroelectric material model and applies a new Kudryashov approach and Bernoulli’s equation technique to ordinary differential equations. We apply these methods to the present model and obtain closed form analytical solutions. A variety of traveling wave and soliton solutions are constructed, including kink, bell, bright, and dark soliton solutions. It is acknowledged that the nonlinear evolution equation can be transformed into an ordinary differential equation by applying traveling wave transformations. Suitable physical parameters are chosen to create 2D, 3D, and contour plots that graphically depict the graphical dispersion of obtained fractional soliton solutions. The impact of the conformable fractional parameter is further demonstrated by the graphical representation of solitons propagation. Furthermore, the study develops the Hamiltonian function of the dynamical system to discuss the system’s total energy in terms of momentum and position. While a chaos analysis describes chaotic, quasi-periodic, and periodic behaviors, a sensitivity analysis demonstrates how responsive the model is to various initial conditions. Due to their dual-purpose nature as nonlinear ferroelectric and dielectric materials, thin ferroelectric films are widely used in modern electrical devices.

New Solitary Waves for Thin-Film Ferroelectric Material Equation Arising in Dielectric Materials

Abstract In this paper, the thin-film ferroelectric material equation (TFFME), which enables the propagation of solitary polarisation in thin-film ferroelectric materials is investigated, will be expressed through the non-linear evolution models. Ferroelectrics are dielectric materials that explain wave propagation non-linear demeanors. The non-linear wave propagation form is administrated by TFFME. To investigate the characterisations of new waves and solitonic properties of the TFFME, the modified exponential Jacobi technique and rational exp(−ϕ(η))-expansion technique are used. Plenty of alternative responses may be achieved by employing individual formulas; each of these solutions is offered by some plain graphs. The validity of such schemes and solutions may be exhibited by assessing how well the relevant schemes and solutions match up. The effect of the free variables on the manner of acting of reached plots to a few solutions in the exact forms was also explored depending upon the nature of non-linearities. The descriptive characteristics of the reached results are presented and analysed by some density, two- and three-dimensional figures. We believe that our results would pave the way for future research generating optical memories based on non-linear solitons.

Mathematical analysis of the dynamics of solitary wave solutions to the time-fractional thin-film ferroelectric materials model

The thin-film ferroelectric materials equation is a fundamental mathematical model to explain the behavior of polarized electric fields in ferroelectric materials possessing unique properties such as piezoelectricity, pyroelectricity, electrostriction, hysteresis, spontaneous polarization, etc. These significant properties of ferroelectric materials are important in the progress of capacitors, non-volatile memories, electrical sensors, as well as optical and biomedical devices, among other applications. The aim of the present study is to explore applicable soliton solutions to the fractional-order model to the aforementioned equation by addressing the improved F-expansion method. Through analysis and rigorous identification, various radical solutions, including trigonometric, hyperbolic, and rational forms of the model, are established, and significant solitons are restored by setting appropriate parameter values in the analytical solutions obtained, which are demonstrated through 3D, 2D, and contour plots. We also explore the impact of fractional derivative as well as the parameters, like pressure, temperature, and others included in the model to determine the polarization effect in ferroelectric materials. This study uncovers several novel solutions along with their states in response to external or internal field parameters, which might be helpful in understanding the nature of ferroelectric materials.

Dynamical features and sensitivity visualization of thin-film Polarisation equation

The present investigation describes the dynamical behavior, multi-stability, and traveling wave solutions of thin-film polarisation equations (TFPE) which describes the propagation of waves in thin-film ferroelectric materials. The extended direct algebraic technique is used to construct the traveling wave patterns. Visual representations of a few randomly selected solutions are provided for physical comprehension. The ordinary differential equation can be expressed in the planar dynamical system using the Galilean transformation. Using various initial conditions for the unperturbed dynamical system, phase portraits with various sorts of trajectories are created. Additionally, the Runge-Kutta method is used to plot nonlinear periodic waves and super nonlinear waves. Additionally, the Hamiltonian function for this undisturbed dynamical system is computed and shown. It also included the source term with amplitude and frequency parameters for the chaotic and quasi-periodic behaviors, and the system is also stated in the non-autonomous form. For the dynamical system under investigation, multi-stability is also thoroughly described. Furthermore, a full inspection of the sensitivity of the perturbed dynamical structure under various initial conditions has been conducted.

A generalized trial equation scheme: A tool for solving thin films constructed from the ferroelectric materials

In this paper, the thin-film ferroelectric material equation (TFFME) which enables the propagation of solitary polarization in thin-film ferroelectric materials is investigated, and also illustrated through the nonlinear evolution equations. Ferroelectrics are dielectric materials that exhibit nonlinear behaviors in wave propagation. Thin films constructed from the ferroelectric materials are utilized in different modern electronic devices. To investigate the characteristics of new waves, the solitary wave dynamics of the mentioned equation is used in the generalized trial equation scheme. The bright and periodic solutions are obtained by semi-inverse variational principle scheme. Many alternative responses may be obtained through different formulae; each of these solutions offers a distinct graph. The validity of such methods and solutions may be demonstrated by assessing how well the relevant techniques and solutions match up. The effects of free variables on the behavior of few achieved solutions for nonlinear rational exact cases are also plotted and explored depending upon the nature of nonlinearities. The dynamic properties of the obtained results are shown and analyzed by some density, two- and three-dimensional images. The results provide a way for future research on generating optical memories based on the nonlinear solitons.

Bifurcation, phase portrait and traveling wave solution of time-fractional thin-film ferroelectric material equation with beta fractional derivative

In this paper, the bifurcation, phase portrait and traveling wave solution of time-fractional thin-film ferroelectric material equation with beta fractional derivative are studied, which are also the biggest innovations of this article compared with existing literature. Firstly, the time-fractional thin-film ferroelectric material equation with beta fractional derivative is converted into the nonlinear ordinary differential equation by using the traveling wave transformation. Secondly, the nonlinear ordinary differential equation is regarded as two-dimensional planar dynamical system. What's more, the bifurcation and phase portraits of two-dimensional planar dynamical system are plotted by using the Maple software. Finally, the traveling wave solutions of time-fractional thin-film ferroelectric material equation with beta fractional derivative are constructed by using the planar dynamical system method.

Exact fractional soliton solutions of thin-film ferroelectric material equation by analytical approaches

In this paper, the main motive is to mathematical explore the thin-film ferroelectric material partial differential equation which addresses the Ferroelectrics, that are being examined as key materials for applications in piezoelectric, pyroelectric electrostrictive, linear, and nonlinear optical systems. Thin ferroelectric films are used in a variety of modern electrical devices because they are both nonlinear ferroelectric and dielectric materials. This article appropriates the fractional travelling wave transformation allowing the partial differential equation to be changed into an ordinary differential equation. The considered fractional model is explored through employing the combo of G′G2−expansion method and new extended direct algebraic methodology. As an outcome, numerous types of soliton solutions like, Periodic pattern with anti-peaked crests and anti-troughs, singular solution, mixed complex solitary shock solution, mixed singular solution, mixed shock singular solution, mixed trigonometric solution, mixed periodic, periodic solution and mixed hyperbolic solution obtain via Mathematica. In addition, the G′G2−expansion technique produces singular, trigonometric, and hyperbolic solutions with different soliton families. The revealed solution will improve the mathematical analysis of this model and the associated physical phenomenon's. In order to visualize the graphical propagation of the obtained fractional soliton solutions, 3D, 2D, and contour graphics are generated by choosing appropriate parametric values. The impact of fractional parameter β is also graphically displayed on the propagation of solitons.

Retracted: Application and Equipment of Preparation Technology of Ferroelectric Thin Film Materials in Sports Industry

Retracted: Application and Equipment of Preparation Technology of Ferroelectric Thin Film Materials in Sports Industry

New optical soliton solutions of thin-film ferroelectric material equation via the complete discrimination system method

In this paper, our main aim is to construct the optical soliton solutions of the well-known thin-film ferroelectric material equation, which describes the propagation of polarization in thin-film materials. Because it has been found that solitary waves may be important for the propagation of polarization fields in ferroelectrics, we investigate its optical soliton solutions using the complete discrimination system technique in this study. As a result, the optical soliton solutions and various solutions are acquired, covering the elliptic double periodic function solution, Jacobian elliptic function solution etc. It appears that bright and singular waves can be propagated in thin-film ferroelectric materials. The richness of the solutions obtained will be conducive to further understand the whole picture of the dynamic behavior of wave propagation in thin-film material. Moreover, this research methods and results are efficacious and can be applied to the exploration of more complex phenomena. Finally, via giving some fixed parameter values, we plot 3D, 2D, density and contour graphs of some obtained solutions for presenting in visual form.

Analytical solitary wave solutions of a time-fractional thin-film ferroelectric material equation involving beta-derivative using modified auxiliary equation method

The main objective of current paper is to examine the impacts of fractional parameters on the dynamic response of soliton waves in a nonlinear time-fractional thin-film ferroelectric materials equation (TFFEME). To achieve such a goal, the TFFEME is first rehabilitated into ordinary differential equation using a complex wave transformation. Solitary wave solutions of the governing equation, representing the dynamics of waves in the material and plays a vital rule in many branches of physics and hydrodynamics, are then constructed through applying the modified auxiliary equation method (MAEM). The extracted solutions are demonstrated using definition of the beta derivative to understand their dynamical behavior. The hyperbolic, periodic and trigonometric function solutions are used to derive the analytical solutions for the given model. As a result, dark, bright, periodic and solitary wave solitons are obtained. The fractional impact of the above derivative on the physical phenomena is observed. The 2D and 3D graphs are also shown to confirm the behavior of analytical wave solutions.

Solitary wave dynamics of thin-film ferroelectric material equation

Ferroelectrics are dielectric materials which exhibit nonlinear behaviors. Thin films made from the ferroelectric materials are used various modern electronics devices. The propagation of solitary polarization in thin-film ferroelectric materials can be described using the nonlinear evolution equations. In this paper, the solitary wave dynamics of the thin-film ferroelectric material equation is investigated. The traveling wave transformation is employed along with the extended sinh-Gordon equation expansion method and the Riccati equation method to construct the soliton and other wave solutions of the thin-film ferroelectric material equation. The hyperbolic, trigonometric and rational function solutions are constructed along with the constraint conditions. A variety of soliton and other traveling wave solutions have been retrieved including kink solitons, bright solitons and periodic wave solutions. To understand the physical structure of the obtained solutions, graphical analysis is presented using 3D-plots, density-plots, and 2D-contours.

Recent progress in ferroelectric synapses and their applications

Brain-like computing is an important direction for the development of integrated circuits in the post-Moore era, and the development of artificial synaptic devices that can simulate ideal synaptic behavior is the key to building brainlike computing chips with neuron-synapse-neuron connectivity. Ferroelectric thin film materials have unique nonvolatile polarization, and the plasticity of polarization is very similar to that of biological synapses, so ferroelectric synaptic devices have been widely concerned in recent years. In this paper, the research progress of ferroelectric synaptic devices is reviewed from two aspects, simulation of synaptic function in devices and brain-like computing applications. The results show that ferroelectric synaptic devices have two typical structures of two-terminal and three-terminal. In addition to effectively simulating biological synapse functions, ferroelectric synaptic devices also have the advantages of simple structure, low power consumption, high stability, large switching ratio, and fast programming speed. In terms of applications, a series of advances have been made in the study of ferroelectric synapse-based neural networks for image recognition; meanwhile, ferroelectric synapses have also been applied to tactile and visual bionics. Although abundant research progress has been made, ferroelectric synapses are still at the proof-of-principle stage. There are considerable challenges in the synaptic performance regulation mechanism, reliability evaluation criteria, array structure optimization design, high-density integration process, neuromorphic computing architecture design, and novel application scenario expansion, which are also the directions that need to be focused for future ferroelectric synapse research.

Preventing Color Fading in Artist’s Oil Paintings Based on Nano-PZT Ferroelectric Thin Film

Due to the excellent electrical properties, stable temperature characteristics, and abundant material systems of ferroelectric thin film materials, in recent years, ferroelectric devices based on silicon technology have been used in microelectronic mechanical systems, new energy photovoltaics, especially nonvolatile memory and other fields. During the preservation of the artist’s oil painting works, the temperature change will directly cause the physical effects of thermal expansion and contraction of the oil painting and the chemical reaction speed of the material in nature. Therefore, it is of great significance to introduce the technology of nano-PZT ferroelectric thin film into oil paintings to prevent fading. This article aims to study the research on preventing fading of the artist’s oil paintings based on nano-PZT ferroelectric thin films and analyze the characteristics of ferroelectric materials, the application of ferroelectric films, the preparation methods of ferroelectric films, and the basis of the main environmental factors that affect the fading of oil paintings. In the above, we studied the fading process of different concentrations of oil paints under simulated sunlight aging and the effect of different concentrations and thicknesses of PZT ferroelectric thin films coated with nano-TiO2 coatings on the color stability of oil paints. The experimental results show that after five times of simulated solar aging for the four concentrations, the total color difference △E: 0.05% group is the largest, 0.4% group is the smallest, the higher the oil paint concentration, the smaller the color difference, the better the color stability, and the antisimulation of sunlight fading.

Narrow Bandgap Inorganic Ferroelectric Thin Film Materials

AbstractHarvesting solar energy to solve the energy crisis and environmental pollution is a research hotspot in the photovoltaic industry today. Conventional ferroelectric materials have a bandgap between 3.0 and 3.8 eV, and their low absorption coefficients and photocurrent densities limit the photovoltaic applications of ferroelectric materials. Inorganic ferroelectric thin film materials with narrow bandgap (1.1–2.0 eV) have high optical absorption coefficient and broad spectral response, wide bandgap tuning range (1.2–3.0 eV), as well as high photocurrent density and switchable ferroelectric photoelectric effect, which have great potential for photovoltaic and optoelectronic applications in solar cells, photodetection, photocatalysis. This review summarizes the recent developments of narrow bandgap inorganic ferroelectric thin‐film materials and aims to stimulate research interest and efforts in ferroelectric photovoltaic materials.

Al1-xScxN Thin Films at High Temperatures: Sc-Dependent Instability and Anomalous Thermal Expansion.

Ferroelectric thin films of wurtzite-type aluminum scandium nitride (Al1−xScxN) are promising candidates for non-volatile memory applications and high-temperature sensors due to their outstanding functional and thermal stability exceeding most other ferroelectric thin film materials. In this work, the thermal expansion along with the temperature stability and its interrelated effects have been investigated for Al1−xScxN thin films on sapphire Al2O3(0001) with Sc concentrations x (x = 0, 0.09, 0.23, 0.32, 0.40) using in situ X-ray diffraction analyses up to 1100 °C. The selected Al1−xScxN thin films were grown with epitaxial and fiber textured microstructures of high crystal quality, dependent on the choice of growth template, e.g., epitaxial on Al2O3(0001) and fiber texture on Mo(110)/AlN(0001)/Si(100). The presented studies expose an anomalous regime of thermal expansion at high temperatures >~600 °C, which is described as an isotropic expansion of a and c lattice parameters during annealing. The collected high-temperature data suggest differentiation of the observed thermal expansion behavior into defect-coupled intrinsic and oxygen-impurity-coupled extrinsic contributions. In our hypothesis, intrinsic effects are denoted to the thermal activation, migration and curing of defect structures in the material, whereas extrinsic effects describe the interaction of available oxygen species with these activated defect structures. Their interaction is the dominant process at high temperatures >800 °C resulting in the stabilization of larger modifications of the unit cell parameters than under exclusion of oxygen. The described phenomena are relevant for manufacturing and operation of new Al1−xScxN-based devices, e.g., in the fields of high-temperature resistant memory or power electronic applications.

Design and Realization of Ferroelectric Thin Film Physical Parameters Test System Based on Electronic Information Technology

Ferroelectric thin film materials are constantly used in our lives. When testing the physical parameters of the ferroelectric film, the thickness of the film is very small or only nanometers, which will bring great difficulties to the accuracy and sensitivity of the test. To understand the role of electronic information technology in the measurement of the physical parameters of ferroelectric thin films, this paper adopts the sweep field method and the sweep frequency method to test the parameters of the ferroelectric thin film. The system uses PZT film as the test material to complete the electrical hysteresis loop measurement experiment in an extremely clean environment. The system hardware circuit is designed, which can complete the measurement of the electrical hysteresis loop, the output of the sinusoidal signal, the data acquisition, and the power supply of the system. The research results show that the parameters of the traditional PZT film material change greatly during the test. The thickness of the improved PLSZT film is about 10% thinner than that of the PZT film. The result can be better in the parameter test.

Subpicosecond Optical Stress Generation in Multiferroic BiFeO3.

Optical excitation leads to ultrafast stress generation in the prototypical multiferroic BiFeO3. The time scales of stress generation are set by the dynamics of the population of excited electronic states and the coupling of the electronic configuration to the structure. X-ray free-electron laser diffraction reveals high-wavevector subpicosecond-time scale stress generation following ultraviolet excitation of a BiFeO3 thin film. Stress generation includes a fast component with a 1/e rise time with an upper limit of 300 fs and longer-rise time components extending to 1.5 ps. The contributions of the fast and delayed components vary as a function of optical fluence, with a reduced a fast-component contribution at high fluence. The results provide insight into stress-generation mechanisms linked to the population of excited electrons and point to new directions in the application of nanoscale multiferroics and related ferroic complex oxides. The fast component of the stress indicates that structural parameters and properties of ferroelectric thin film materials can be optically modulated with 3 dB bandwidths of at least 0.5 THz.

Retracted] Application and Equipment of Preparation Technology of Ferroelectric Thin Film Materials in Sports Industry

With the rapid development of the integrated circuit industry, ferroelectric thin film materials and technologies have become increasingly important. Ferroelectric materials have been widely used in aerospace, information storage, artificial intelligence, microelectromechanical, wearable devices, and other fields. Traditional sports is an important carrier of traditional culture. It contains the sports cultural resources created and precipitated by the Chinese nation for thousands of years, and all sectors of society are also paying great attention to this. Under the background of the market economy system and the major premise of the vigorous development of the cultural industry and sports industry, industrialization is obviously the inevitable choice for traditional sports to break through the difficulties and seek development, and it will also promote the further inheritance and promotion of traditional sports. The complex combination causes its performance to decrease or even fail. Therefore, it cannot cause foresee losses and disasters. It has important application value and significance to master the performance changes and mechanisms of ferrous film materials under different adding environments. This paper takes ferroelectric Pb (Zr0.52Ti0.48)O3(PZT)Bi3.15Nd0.85Ti3O12(BNT) as the research object, proposes the preparation of sol coating for thin film materials, and studies the preparation parameters PZT of the sol electric ferroelectric method. Electrical method and BNT electrical film properties affect iron and physical experiments on the properties of iron. The influence of the best sol‐iron coating method on the electrical properties of PZT and BNT films is the ferroelectric properties of the 700°C layer of high‐temperature gas, 10‐layer PZT films, and 8‐layer BNT films. The elasticity and elastic moduli of PZT and BNT films are 66.8 MPa and 99.6 MPa and 159.3 GPa and 189GPa, respectively; the elastic coefficients of PZT and BNT films are15.4 × 1010 N/m2 and18.4 × 1010 N/m2, and their elastic coefficients|e31|decrease with accompanying increase in swallowing. And with the disease of reading and writing field strength, as the speed becomes faster and slower, the carriers have more time to move to the brain wall, so the intensity is also intuitive. It has strong practicability and feasibility to popularize the material and manufacture the equipment of the current sports equipment club.

Ferroelectric thin films: performance modulation and application

A review on performance optimization and application of ferroelectric thin film materials.