Ferroelectric Switching Research Articles

Domain switching and shear-mode piezoelectric response induced by cross-poling in polycrystalline ferroelectrics

The mechanisms contributing to the electromechanical response of piezoelectric ceramics in the shear mode have been investigated using high-energy synchrotron x-ray diffraction. Soft lead zirconate titanate ceramic specimens were subjected to an electric field in the range 0.2–3.0 MV m−1, perpendicular to that of the initial poling direction, while XRD patterns were recorded in transmission. At low electric field levels, the axial strains remained close to zero, but a significant shear strain occurred due to the reversible shear-mode piezoelectric coefficient. Both the axial and shear strains increased substantially at higher field levels due to irreversible ferroelectric domain switching. Eventually, the shear strain decreased again as the average remanent polarization became oriented toward the electric field direction. The lattice strain and domain orientation distributions follow the form of the total strain tensor, enabling the domain switching processes to be monitored by the rotation of the principal strain axis. Reorientation of this axis toward the electric field direction occurred progressively above 0.6 MV m−1, while the angle of rotation increased from 0° to approximately 80° at the maximum field of 3.0 MV m−1. A strong correlation was established between the effective strains associated with different crystallographic directions, which was attributed to the effects of elastic coupling between grains in the polycrystal.

Strain Fluctuations Unlock Ferroelectricity in Wurtzites

AbstractFerroelectrics are of practical interest for non‐volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated by film‐thickness limitations, which impede polarization reversal under low applied voltage. Wurtzite materials, including magnesium‐substituted zinc oxide (Zn,Mg)O, have been shown to exhibit scalable ferroelectricity as thin films. In this work, the origins of ferroelectricity in (Zn,Mg)O are explained, showing that large strain fluctuations emerge locally in (Zn,Mg)O and can reduce local barriers to ferroelectric switching by more than 40%. Concurrent experimental and computational evidence of these effects are provided by demonstrating polarization switching in ZnO/(Zn,Mg)O/ZnO heterostructures featuring built‐in interfacial strain gradients. These results open up an avenue to develop scalable ferroelectrics by controlling strain fluctuations atomistically.

Polarization pinning at antiphase boundaries in multiferroic YbFeO3

Abstract The switching characteristics of ferroelectrics and multiferroics are influenced by the interaction of topological defects with domain walls. We report on the pinning of polarization due to antiphase boundaries in thin films of the multiferroic hexagonal YbFeO3. We have directly resolved the atomic structure of a sharp antiphase boundary (APB) in YbFeO3 thin films using a combination of aberration-corrected scanning transmission electron microscopy (STEM) and total energy calculations based on density-functional theory (DFT). We find the presence of a layer of FeO6 octahedra at the APB that bridges the adjacent domains. STEM imaging shows a reversal in the direction of polarization on moving across the APB, which DFT calculations confirm is structural in nature as the polarization reversal reduces the distortion of the FeO6 octahedral layer at the APB. Such APBs in hexagonal perovskites are expected to serve as domain-wall pinning sites and hinder ferroelectric switching of the domains.

Control of ferroelectricity in Ta-doped HfO2 and its non-zero-crossing current–voltage hysteresis behavior

Hafnium oxide (HfO2)-based ferroelectrics are being explored as potential candidates for ferroelectric memory devices due to their highly compatibility with complementary metal-oxide-semiconductor (CMOS) technology. Enhancing the remanent polarization and investigating the underlying mechanism are crucial tasks. In the present study, tantalum (Ta) was introduced as a dopant to induce ferroelectric properties in HfO2, a large portion of orthorhombic phase was recognized in the as-grown Ta:HfO2 without further thermal treatment. The remanent polarization of Ta:HfO2 thin films can be optimized by adjusting the oxygen flow rates during the sputtering process. The influencing factors for enhanced ferroelectric performance include the control of Ta concentration, its valence state, and the presence of singly ionized oxygen vacancies, which are influenced by oxygen addition. Furthermore, the resistive switching behavior showing non-zero crossing current–voltage (I–V) hysteresis is associated with ferroelectricity and the presence of oxygen vacancies. A model has been proposed to explain the ferroelectric resistive switching with non-zero crossing I–V characteristics by considering the role of oxygen vacancies and polarization effects. This model suggests that the oxygen vacancies at the surface layer, along with ferroelectric polarization, play a crucial role in electron transport.

Probing of Polarization Reversal in Ferroelectric (Al,Sc)N Films Using Single‐ and Tri‐Layered Structures With Different Sc/(Al+Sc) Ratio

AbstractWurtzite‐(Al,Sc)N films are promising candidates for ferroelectric memory devices owing to their outstanding properties. However, there are many challenges on the way to practical applications, including lowering an electric field required for polarization switching. Understanding the switching kinetics, especially the starting point of polarization reversal, is key to designing materials with desired properties. Here, the impact of Sc concentration and segregation on the switching kinetics for (Al,Sc)N capacitors is investigated by evaluating time‐ and field‐dependences of the switching polarization for the tri‐layered (Al,Sc)N films with various Sc/(Al+Sc) ratios. The remanent polarization of stacked films slightly decreased compared to those of the single‐layered films with the same average Sc/(Al+Sc) ratio, while their coercive fields depended on the average Sc content in (Al,Sc)N. The ferroelectric switching behavior suggests the possibility of nucleation originating from the Sc‐rich region and the sequential switching mechanism for individual layers, which is unique to multilayered films. This shows a possibility that nucleations of the polarization switching start not from the interface between the (Al,Sc)N films and the electrodes. The unique switching kinetics in tri‐layered (Al,Sc)N films have provided new insights into the field of ferroelectric switching in wurtzite‐nitrides.

Hf0.4Zr0.6O2 Thickness-Dependent Transfer Characteristics of InxZn1-xOy Channel Ferroelectric FETs.

We investigate how the threshold voltage (VT) is adjusted to create a memory window (MW) in ferroelectric field-effect transistors (FeFETs) composed of ferroelectric Hf0.4Zr0.6O2 and InZnO (In2O3:ZnO = 9:1 wt %). Temperature-dependent polarization measurements reveal a dipole switching in Hf0.4Zr0.6O2. The properties of the n-type InZnO channel are examined by fabricating an oxide transistor with an HfO2 gate dielectric. Upon replacement of HfO2 with Hf0.4Zr0.6O2 in the oxide transistor, a counterclockwise MW is observed. Specifically, as the Hf0.4Zr0.6O2 thickness increases from 16 to 24 nm, the VT of the FeFET after a + gate voltage (VG) sweep remains nearly constant, while the VT after a -VG sweep shifts significantly from -0.9 to 0.5 V. The enlarged MW of approximately 2 V, which is proportional to the Hf0.4Zr0.6O2 thickness in the FeFET, can be explained by considering the balance between VG controllability across the gate stack and the ferroelectric switching of Hf0.4Zr0.6O2.

Enhanced Electrical Polarization in van der Waals α-In2Se3 Ferroelectric Semiconductor Field-Effect Transistors by Eliminating Surface Screening Charge.

A van der Waals (vdW) α-In2Se3 ferroelectric semiconductor channel-based field-effect transistor (FeS-FET) has emerged as a next-generation electronic device owing to its versatility in various fields, including neuromorphic computing, nonvolatile memory, and optoelectronics. However, screening charges cause by the imperfect surface morphology of vdW α-In2Se3 inhibiting electrical polarization remain an unresolved issue. In this study, for the first time, a method is elucidated to recover the inherent electric polarization in both in- and out-of-plane directions of the α-In2Se3 channel based on post-exfoliation annealing (PEA) and improve the electrical performance of vdW FeS-FETs. Following PEA, an ultra-thin In2Se3-3xO3x layer formed on the top surface of the α-In2Se3 channel is demonstrated to passivate surface defects and enhance the electrical performance of FeS-FETs. The on/off current ratio of the α-In2Se3 FeS-FET has increased from 5.99 to 1.84 × 106, and the magnitude of ferroelectric resistance switching has increased from 1.20 to 26.01. Moreover, the gate-modulated artificial synaptic operation of the α-In2Se3 FeS-FET is demonstrated and illustrate the significance of the engineered interface in the vdW FeS-FET for its application to multifunctional devices. The proposed α-In2Se3 FeS-FET is expected to provide a significant breakthrough for advanced memory devices and neuromorphic computing.

Exploring grain size and composition effects on the functional properties of BaGexTi1-xO3 ceramics

This study investigates BaGexTi1-xO3 ceramics with varying compositions (x = 0.010, 0.018, 0.100) produced by solid-state reaction, exploring the impact of composition and sintering temperatures (1150 °C, 1200 °C, 1300 °C) on functional characteristics (low-field dielectric, tunability, ferroelectric switching). Increasing Ge amount and sintering temperatures enhances sinterability of BaGexTi1-xO3 to almost complete densification. Room temperature permittivity ranges from 1000 to 2000, with dielectric losses below 10%. For small Ge additions, the dielectric behavior and phase transitions mirror BaTiO3 ceramics. Increasing Ge addition results in a slight increase of the Curie temperature. Dielectric relaxation mechanisms involve two activation energy ranges related to oxygen vacancies and ionic conduction. Ceramics with larger grain sizes exhibit well-defined ferroelectric P(E) loops, while fine-grained ones contain extrinsic contributions. The highest tunability performances are found for the lowest Ge additions, sintered at 1150 °C, which are able to withstand the application of the highest dc field.

Effect of abnormally oriented grains on the ferroelectric properties of Al0.65Sc0.35N thin films

The wide bandgap wurtzite Al1-xScxN ferroelectric material is compatible with semiconductor processes and offers advantages such as high remanent polarization (Pr) and high-temperature stability. To clear the relationship between the structure zone model (SZM), abnormally oriented grains (AOGs) and the ferroelectric properties, the Al0.65Sc0.35N films were prepared at various sputtering pressures (0.32–0.90 Pa) and substrate temperatures (200–500 ℃) on low resistance n+-(111) Si substrate by the radio frequency dual-source reactive magnetron sputtering method using Al and Sc targets under pure N2 gas. The introduction of AOGs facilitates compressive stress reduction and promotes ferroelectric switching. However, excessive AOGs will damage the (002) orientation, leading to loss of ferroelectricity. The Al0.65Sc0.35N films synthesized under a sputtering pressure of 0.52 Pa and a substrate temperature of 400 ℃ exhibited a lower leakage current at high electric field, with a Pr value of 154.3 μC/cm2 and a negative coercive field (Ec-) of 3.1 MV/cm at a testing frequency of 1 kHz. The outstanding comprehensive properties support the large potential of Al1-xScxN ferroelectric material for high-performance FeRAM devices.

Light-Induced Complete Reversal of Ferroelectric Polarization in Sliding Ferroelectrics.

Previous experiments have provided evidence of sliding ferroelectricity and photoexcited interlayer shear displacement in two-dimensional materials, respectively. Herein, we find that a complete reversal of vertical ferroelectric polarization can be achieved within an astonishing 0.5ps in h-BN bilayer by laser illumination. Comprehensive analysis suggests that ferroelectric polarization switching originates from laser-induced interlayer sliding triggered by selective excitation of multiple phonons. The interlayer electron excitation from the p_{z} orbitals of the upper layer N atoms to the p_{z} orbitals of the lower layer B atoms produces desirable and directional interlayer forces activating the in-plane optical TO-1 and LO-1 phonon modes. The atomic motions driven by the coupling of TO-1 and LO-1 modes are coherent with ferroelectric soft mode, thus modulating the dynamical potential energy surface and resulting in ultrafast ferroelectric polarization reversal. Our work provides a novel microscopic insight into ultrafast polarization switching in sliding ferroelectrics.

Roles of temperature, materials, and domain inversion in high-performance, low-bias-drift thin film lithium niobate blue light modulators

We demonstrate a thin film lithium niobate electro-optic modulator operating at 456 nm with an RF voltage-length product of 0.38 V-cm and a bandwidth of 6.9 GHz. We test the dielectric relaxation of the modulator with sweeps of temperature and optical input power, and compare equivalent modulators with electrode materials of Cr-Au, Ti-Au and Al in terms of bias stability and current-voltage characteristics. We demonstrate bias stability over at least 8 hours with Al devices, and show relationships between drift, I-V characteristics and ferroelectric domain switching.

Al1−xScxSbyN1−y: An opportunity for ferroelectric semiconductor field effect transistor

For the in-memory computation architecture, a ferroelectric semiconductor field-effect transistor (FeSFET) incorporates ferroelectric material into the FET channel to realize logic and memory in a single device. The emerging group III nitride material Al1−xScxN provides an excellent platform to explore FeSFET, as this material has significant electric polarization, ferroelectric switching, and high carrier mobility. However, steps need to be taken to reduce the large band gap of ∼5 eV of Al1−xScxN to improve its transport property for in-memory logic applications. By state-of-the-art first principles analysis, here we predict that alloying a relatively small amount (less than ∼5%) of Sb impurities into Al1−xScxN very effectively reduces the band gap while maintaining excellent ferroelectricity. We show that the co-doped Sb and Sc act cooperatively to give a significant band bowing leading to a small band gap of ∼1.76 eV and a large polarization parameter ∼0.87 C/m2, in the quaternary Al1−xScxSbyN1−y compounds. The Sb impurity states become more continuous as a result of interactions with Sc and can be used for impurity-mediated transport. Based on the Landau-Khalatnikov model, the Landau parameters and the corresponding ferroelectric hysteresis loops are obtained for the quaternary compounds. These findings indicate that Al1−xScxSbyN1−y is an excellent candidate as the channel material of FeSFET.

The electronic and magnetic properties modulated by ferroelectric polarization switching in two-dimensional VSeTe/Sc2CO2 van der Waals heterostructures.

Exploring multiferroic materials that combine magnetic and ferroelectric properties is scientifically interesting and has important technical implications for many functions of nanoscale devices. In this work, spintronics and magnetoelectric coupling devices are proposed in two-dimensional (2D) layered ferromagnetic (FM)/ferroelectric (FE) van de Waals (vdW) heterostructures, VSeTe/Sc2CO2, employing density functional theory (DFT) calculations. The results indicate that the VSeTe/Sc2CO2 vdW heterostructure changes from a metal to a semiconductor in Sc2CO2-P↑ and Sc2CO2-P↓ polarization states. At the same time, the charge at the interface of the VSeTe/Sc2CO2 heterostructure will also be redistributed with the transformation of the ferroelectric polarization state, resulting in the change of the distribution of the electronic states near the Fermi level, and thus the change in the magnetic anisotropy energy (EMAE) of the heterostructure. Interestingly, biaxial strain brings reversibility and non-volatile regulation to the heterostructure of semiconductors and metals. The results provide an effective way to fabricate magnetoelectric coupling devices with 2D multiferroic heterostructures.

Altermagnetism Induced by Sliding Ferroelectricity via Lattice Symmetry-Mediated Magnetoelectric Coupling.

Altermagnets, distinct from conventional ferromagnets or antiferromagnets, have recently attracted attention as the third category of collinear magnets, which exhibit the coexistence of zero net magnetization and spin polarization due to their unique lattice symmetries. Meanwhile, the additional layer degrees of freedom in multilayer sliding ferroelectrics offer opportunities for coupling with lattice symmetries, paving the way for an innovative approach to constructing multiferroic lattices. In this study, altermagnetic tuning in SnS2/MnPSe3/SnS2 heterostructures is achieved by breaking and restoration of lattice inversion symmetry through sliding ferroelectric switching. First-principles calculations reveal that the spin density and corresponding time-reversal symmetry of MnPSe3 can be manipulated by lattice symmetry, triggering phase transitions between antiferromagnetism and altermagnetism. This research establishes a novel form of magnetoelectric coupling mediated by lattice symmetry and provides a theoretical basis for the design of miniature information processing and memory devices based on altermagnetism.

Effect of Sr substitution on the structural, dielectric and ferroelectric property of BaTiO3

We have performed a comprehensive study to explore the effect of Sr substitution on the structural and ferroelectric properties of BaTiO3(BTO) with compositions Ba1-xSrxTiO3for 0 ⩽x⩽ 1. The room temperature structural investigation inferred that the samples with compositionsx> 0.30 has cubic phase instead of tetragonal as for pristine BTO. The temperature dependent dielectric studies illustrate that all well-known three structural phase transitions of BTO are coming closer to each other and the cubic phase is shifted towards lower temperature with increasing Sr content. The frequency dependent dielectric measurements show that there exists the mesoscopic subdomain, whose relaxation time decreases with increasing Sr concentration. The Sr substitution enhanced the ferroelectric properties and maximum remnant polarization at room temperature is observed for 20% Sr substituted sample. The frequency dependent dielectric measurements illustrate the relaxation which could be due to the mesoscopic subdomain, and its relaxation time decreases with increasing Sr concentration. The frequency dependentP-Emeasurements at room temperature infer that for 30% Sr substituted sample, the ferroelectric domain switching is dominated by the rate of nucleation whereas in other compositions forx< 0.3, it is governed by the domain wall speed. The Raman measurements infer the rearrangement of the domain configuration with Sr substitution. Modification in the intensity of the E(TO4) and A(TO3) Raman modes with electric field is also observed for 30% Sr substituted sample and the origin of this is also discussed.

Polarization-Switchable Electrochemistry of 2D Layered Bi2O2Se Bifunctional Microreactors by Ferroelectric Modulation.

Ferroelectric catalysts are known for altering surface catalytic activities by changing the direction of their electric polarizations. This study demonstrates polarization-switchable electrochemistry using layered bismuth oxyselenide (L-Bi2O2Se) bifunctional microreactors through ferroelectric modulation. A selective-area ionic liquid gating is developed with precise control over the spatial distribution of the dipole orientation of L-Bi2O2Se. On-chip microreactors with upward polarization favor the oxygen evolution reaction, whereas those with downward polarization prefer the hydrogen evolution reaction. The microscopic origin behind polarization-switchable electrochemistry primarily stems from enhanced surface adsorption and reduced energy barriers for reactions, as examined by nanoscale scanning electrochemical cell microscopy. Integrating a pair of L-Bi2O2Se microreactors consisting of upward or downward polarizations demonstrates overall water splitting in a full-cell configuration based on a bifunctional catalyst. The ability to modulate surface polarizations on a single catalyst via ferroelectric polarization switching offers a pathway for designing catalysts for water splitting.

Machine learning surrogate for 3D phase-field modeling of ferroelectric tip-induced electrical switching

Phase-field modeling offers a powerful tool for investigating the electrical control of the domain structure in ferroelectrics. However, its broad application is constrained by demanding computational requirements, limiting its utility in inverse design scenarios. Here, we introduce a machine-learning surrogate to accelerate 3D phase-field modeling of tip-induced electrical switching. By dynamically handling the boundary conditions, the surrogate achieves accurate reproduction of switching trajectories under various tip locations and applied voltages. With stable predictions throughout entire morphological evolution pathways and a relative error inferior to 10% compared to direct solvers, the model efficiently emulates intricate switching sequences. By successfully replicating the boundary conditions, the presented framework strides towards a holistic surrogate for the ferroelectric phase field. With up to 2500-fold speed-ups over classical methods, our approach opens the path for the tractable design of the domain structure and the resolution of realistic inverse problems.

Giant tunneling resistance and robust switching behavior in ferroelectric tunnel junctions of WS2/Ga2O3 heterostructures: The influence of metal–semiconductor contacts

The ferroelectric tunneling junctions (FTJs) are widely recognized as one of the non-volatile memories with significant potential. Ferroelectricity usually fades away as materials are thinned down below a critical value, and this problem is particularly acute in the case of shrinking device sizes, thus attracting attention to two-dimensional ferroelectric materials (2DFEMs). In this work, we designed 2D ferroelectric Ga2O3-based FTJs with out-of-plane polarization, and the influence of metal–semiconductor contact in the electrode region on the system is considered. Here, using density functional theory combined with the non-equilibrium Green's function approach to quantum transport calculations, we demonstrate robust ferroelectric polarization-controlled switching behavior between metallic and semiconducting states in Ga2O3/WS2 ferroelectric heterostructures. The potential barrier of the metal–semiconductor contact in the electrode region is lower than that of the intrinsic material, thereby resulting in an increased probability of electron tunneling. Our results reveal the crucial role of 2DFEMs in the construction of FTJs and highlight the significant impact of electrode contact types on performance. This provides a promising approach for developing high-density ferroelectric memories based on 2D ferroelectric semiconductor heterostructures.

Reversible electrochromism in α-In2Se3 through ferroelectric switching induced phase transition

Reversible electrochromism in α-In2Se3 through ferroelectric switching induced phase transition

Ferroelectric Aluminum Scandium Nitride Transistors with Intrinsic Switching Characteristics and Artificial Synaptic Functions for Neuromorphic Computing.

Aluminum Scandium Nitride (Al1-xScxN) has received attention for its exceptional ferroelectric properties, whereas the fundamental mechanism determining its dynamic response and reliability remains elusive. In this work, an unreported nucleation-based polarization switching mechanism in Al0.7Sc0.3N (AlScN) is unveiled, driven by its intrinsic ferroelectricity rooted in the ionic displacement. Fast polarization switching, characterized by a remarkably low characteristic time of 0.00183ps, is captured, and effectively simulated using a nucleation-limited switching (NLS) model, where the profound effect of defects on the nucleation and domain propagation is systematically studied. These findings are further integrated into Monte Carlo simulations to unravel the influence of the activation energy for ferroelectric switching on the distributions of switching thresholds. The long-term reliability of devices is also confirmed by time-dependent dielectric breakdown (TDDB) measurements, and the effect of thickness scaling is discussed. Ferroelectric field-effect transistors (FeFETs) are demonstrated through the integration of AlScN and 2D MoS2 channel, where biological synaptic functions can be emulated with optimized operation voltage. The artificial neural network built from AlScN-based FeFETs achieves 93.8% recognition accuracy of handwritten digits, demonstrating the potential of ferroelectric AlScN in future neuromorphic computing applications.