Fall Time Research Articles

Thermal modelling and layout optimization of GaN half-bridge IC with integrated drivers and power HEMTs

The paper presents the results of thermal modeling of a half-bridge monolithic integrated circuit (IC) with integrated drivers and enhanced mode power high electron mobility transistors, based on a GaN-on-SOI heterostructure. It had been established that the main heat sources in the IC were the half-bridge GaN HEMTs. The heat from the half-bridge GaN HEMTs propagates in the chip and leads to heating of the logic block and gate drivers. Heating of half-bridge GaN HEMTs leads to increased channel resistance and IC output current drop. Heating of the gate drivers reduces driving current, as a result, increases the switching time of the half-bridge GaN HEMTs. Heating of the logic block increases the rise and fall times of the generated control signals, which worsens the dynamic characteristics of the IC. A comparative analysis of heat propagation for IC dies based on GaN-on-SOI and GaN-on-Si heterostructures showed that GaN-on-SOI structure has a 40% greater junction-to-backside thermal resistivity compared to GaN-on-Si structure. In this case, the specific thermal resistance in the direction of heat propagation from the hotspot of the transistor to the backside of the die for the GaN-on-SOI structure is almost two orders of magnitude greater than in the direction of its propagation to the frontside of the chip. The results obtained were used for IC layout optimization. The rearrangement of GaN-on-SOI IC functional blocks, as well as to introduction of additional heat-spreading elements on the frontside of chip were carried out during the optimization.

High-performance deep-ultraviolet photodetector based on a single-crystalline ϵ-Ga2O3/Sn-doped In2O3 heterojunction

Abstract Metastable ϵ-Ga2O3, with its superior physical properties and high substrate compatibility, demonstrates considerable potential in developing heterojunction deep-ultraviolet photodetectors (DUV PDs). Herein, we fabricate a high-performance DUV PD utilizing a single crystalline ϵ-Ga2O3/ Sn-doped In2O3 (ITO) heterojunction. Under a reverse bias of 15 V, the device exhibits a high responsivity of 506 A/W, an excellent UV/visible rejection ratio of 6.74 × 104, and a fast fall time of 40 ms while maintaining good performance across a broad illumination range of 90–4100 μW cm−2. Moreover, the device can operate in a self-powered mode at zero bias, further verifying the presence of a depletion region within the ϵ-Ga2O3/ITO heterojunction. Our results demonstrate that ϵ-Ga2O3 is promising for high-quality integration on ITO and application in DUV detection, offering new strategic directions for developing high-performance Ga2O3-based DUV PDs.

In View of...

The UNCW (formerly Randall) Library will open its new three-story, 80,000+-square-foot expansion in time for Fall 2024 classes. The planning for this expansion began in Summer 2018, and contractors broke ground in July 2022.

The Characterization of Electric Field Pulses Observed in the Preliminary Breakdown Processes of Normal and Inverted Intracloud Flashes

We have studied the parameters of preliminary breakdown (PB) pulses in 395 normal and 319 inverted intracloud (IC) flashes observed in Gifu, Japan, and Ningxia, China, respectively, by using a low-frequency mapping system called fast antenna lightning mapping array (FALMA). These parameters are extracted from the first half of the PB pulses. It is found that compared to normal IC flashes, inverted IC flashes exhibited PB pulses with slower rise times (6.8 vs. 3.1 μs), wider half-peak widths (3.8 vs. 2.5 μs), longer zero-crossing times (26.2 vs. 14 μs), and extended fall times (4 vs. 3.2 μs). We further demonstrated that such discrepancies between normal and inverted IC flashes should not be caused by subjective factors, like noise threshold setting, or objective factors, like signal propagation distance. Based on this analysis, finally, we inferred that the discrepancies should be a reflection of the PB channel properties of normal and inverted IC flashes.

Dual-mode 1 × 2 optical switch with simultaneous modulation based on inverse design devices

Abstract Mode division multiplexing (MDM) technology, based on the parallelism inherent in mode dimensions, provides an advancement in enhancing on-chip optical communication channel capacity. In MDM communication systems, the routing and switching of optical signals are of essential importance. However, conventional multimode optical switches typically follow the demultiplexing-processing-multiplexing technological route, leading to an unavoidable increase in device size. In scenarios where multiple modes need to be routed synchronously, the implementation of simultaneous modulation optical switches offers a more efficient and feasible solution. Here, we propose two 1×2 dual-mode optical switches with simultaneous modulation on a silicon-on-insulator (SOI) platform in the 1525-1565 nm wavelength range, utilizing two optical phase modulation techniques: mode transformation and waveguide widening. Simultaneously, we employ inverse design methodologies based on the adjoint variable method (AVM) and level-set method to create the compact single-connected devices, which are compatible with CMOS fabrication processes. The experimental results show that the insertion losses for both TE0 and TE1 modes are less than 1.6 dB (2.5 dB), with the worst modal crosstalk at most -13.5 dB (-12.7 dB) for the switch based on mode transformation (waveguide widening) strategy at the wavelength of 1550nm. The extinction ratio (ER) of the two proposed optical switches exceeds 25 dB at the same wavelength. Furthermore, the switches exhibit a 10%-90% rise time of 15.2 μs and a 90%-10% fall time of 19.5 μs at 1550 nm, indicating the switching speed can be up to kilohertz (kHz). Our proposed 1×2 optical switches hold potential as a fundamental unit for optical signal switching in high-integration multimode optical communication systems.

Performance enhancement of MOCVD grown Zn-doped β-Ga2O3 Deep-Ultraviolet photodetectors on silicon substrates via TiN buffer layers

Integrating β-Ga2O3-based devices on silicon substrates faces challenges due to lattice and thermal expansion mismatches, leading to performance-degrading defects. Therefore, this work explores the utilization of a titanium nitride (TiN) buffer layer in order to enhance the performance of MOCVD grown Zn-doped β-Ga2O3-based deep-ultraviolet (DUV) photodetectors (PDs) on silicon substrates with 12, 24, and 36 sccm diethylzinc (DEZn) flow rates. The XPS depth profiles revealed the presence of TiN buffer layer in β-Ga2O3/TiN/Si films, which served as a diffusion barrier during deposition, preserving interface integrity and reducing defect density. Zn-doped β-Ga2O3/TiN/Si based DUV PDs revealed remarkable results. The 12 sccm Zn-doped β-Ga2O3/TiN/Si PDs demonstrated an exceptional maximum responsivity of 31.4 A/W, which is 7 times higher compared to the undoped β-Ga2O3/TiN/Si (4.47 A/W) under a 5 V bias and 240 nm wavelength illumination. This PD exhibited the detectivity of 1.68 × 1013 Jones and EQE of 1.63 × 104 %. This PD possess quick rise time of 6.5 s and fall time of 0.5 s. The energy band diagram for Zn-doped β-Ga2O3/TiN/Si metal–semiconductor-metal type PDs is discussed. This work demonstrates that TiN buffer layers and Zn doping significantly improve the performance and reliability of β-Ga2O3-based DUV photodetectors on silicon substrates.

Silver Telluride Colloidal Quantum Dot Solid for Fast Extended Shortwave Infrared Photodetector.

Extended shortwave infrared (eSWIR) photodetectors that employ solution-processable semiconductors have attracted attention for use in applications such as ranging, night vision, and gas detection. Colloidal quantum dots (CQDs) are promising materials with facile bandgap tunability across the visible-to-mid-infrared wavelengths. However, toxic elements, such as Hg and Pb, and the slow response time of CQD-based IR photodetectors, limit their commercial viability. This article presents a novel eSWIR photodetector that is fabricated using silver telluride (Ag2Te) CQDs. Effective thiolate ligand exchange enables a lower trap density and improved carrier mobility in CQD solids. Furthermore, a vertical p-n photodiode architecture with a favorable energy-level landscape is utilized to facilitate charge extraction, resulting in a fast, room-temperature-operable, and toxic-element-free CQD photodetector. The best eSWIR Ag2Te CQD photodetector exhibits a fall time of 72ns, representing the fastest response time among all prior CQD-based eSWIR photodetectors, including those containing toxic elements, such as Pb and Hg.

One-step solution processing of printable Sb2S3 nano-rods for high-performance photoconductors

Abstract Achieving large-scale, affordable, and highly dependable production of antimony sulfide is crucial for unlocking its potential in various applications, including photoconductors, solid-state batteries, thermoelectrics, and solar cells. In our study, we introduce a straightforward, economical, and catalyst-free single-step solution process for fabricating one-dimensional Sb2S3 nanostructures on flexible polyimide substrates, and we explore their use as photoconductors in the ultraviolet (UV) and visible light spectrum. The precursor solution for creating the Sb2S3 films is prepared by dissolving specified quantities of elemental Sb and S in a solution mixture of ethylenediamine and 2-mercaptoethanol. This solution is then spin-coated onto a polyimide substrate and subsequently annealed at 300 °C for several minutes. Utilizing field emission scanning electron microscopy, grazing incidence x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we demonstrate that the Sb2S3 films possess high crystallinity, uniform morphology, and a composition that is nearly stoichiometric. Additionally, through Tauc plot analysis, we determine that the films exhibit a direct bandgap of approximately 1.67 eV, which is in close agreement with the bandgap predicted by Heyd–Scuseria–Ernzerhof (HSE06) density-functional theory simulations. The metal-semiconductor–metal photoconductors fabricated with these films display a significant photoresponse to both UV and visible light. These devices achieve a UV on/off ratio of up to 160 at a light intensity of 30 mW cm−2, with brief rise and fall times of 44 ms and 28 ms, respectively.

Large area, ultrafast, suppressed dark current and high-performance PtSe2/MoS2 van der Waals heterostructure based visible to NIR broadband photodetector

Group-10 transitional metal dichalcogenide, in particular Platinum selenide (PtSe2), have attracted substantial attention owing to its fascinating properties such as high carrier mobility, narrow bandgap, and high stability in contrast to other low bandgap 2D materials. However, in bare PtSe2, high dark current and lower sensitivity restrict to make high-performance broadband photodetector. Herein, a large area and stable PtSe2/MoS2 heterostructure based photodetector is fabricated which exhibits suppressed dark current and high-performance with broad 400-1200 nm detection, covering visible to near-infrared region (NIR). The PtSe2/MoS2 heterostructure device exhibits ∼103 order reduction in the dark current, high detectivity, and better stable response as compared to its bare PtSe2 device. Moreover, under NIR (900 nm) illumination, the PtSe2/MoS2 device demonstrates high responsivity of 17.9 AW−1 and high specific detectivity of 9.8 × 1012 Jones at amoderate bias of −5V. It exhibits ultra-fast response with rise/ fall time of 103 μs/117 μs corroborating its high performance. To understand the working of PtSe2/MoS2 photodetector, a detailed carrier transport mechanism is investigated based on the interface. This work provides a facile strategy to fabricate large area, fast response and high-performance broadband photodetector to build future optoelectronic devices.

Achieving photomultiplication in organic-MOF complex via interface and band engineering

This work studies a hybrid broadband photodetector with and without metal–organic framework nanosheets with an inverted structure. It is observed that an inverted structure provides photomultiplication in the devices with both positive and negative biases. This phenomenon is believed to be due to a non-uniform TiO2/active layer interface where the porosity of TiO2 facilitates structural traps, in turn achieving photomultiplication in P3HT: PCBM (1:1) devices. Meanwhile, in photodetectors with an active layer of P3HT:ZnTCPP:PCBM (1:0.5:1), photomultiplication is attributed to interface traps and band alignment due to ZnTCPP nanosheets. The presence of ZnTCPP reduces the dip in EQE at 370–460 and 530–610 nm range, thus improving broadband detection (300–700 nm). Adding ZnTCPP to the devices results in improved rise and fall times. The on–off response is also relatively stable for the devices with ZnTCPP and has high detectivity (1011 Jones). Thus, this study sheds light on the role of a thin interface layer of TiO2 in photomultiplication and improving performance parameters with ZnTCPP nanosheets.

A Flexible Multifunctional Sensor Based on an AgNW@ZnONR Composite Material.

A multifunctional sensor comprising flexible and transparent ultraviolet (UV) photodetectors (PDs) with strain gauges based on Ag nanowire (AgNW)@ZnO nanorods (ZnONRs) was fabricated using a cost-effective, simple, and efficient method. High-aspect ratio silver nanowires were synthesized using the polyol method. An AgNW@ZnONR composite was formed via the hydrothermal method to ensure the multifunctional capability of the flexible sensors. After refining the process parameters, the size of the ZnO nanorods was decreased to fabricate pliable multifunctional sensors using AgNW@ZnONRs. At a deposition of 0.207 g of AgNW@ZnONRs, the sensor achieves its maximum switching ratio and fastest response time under conditions of 2000 μW/cm2 UV optical power density. With a ton (rise time) of 2.7 s and a toff (fall time) of 2.3 s, the ratio of Ion to Ioff current is 1151. Additionally, the sensor's maximum optical current value correlates linearly with UV light's power density. The maximum response current increased from 222.5 pA to 588.1 pA, an increase of 164.3%, when the bending angle was increased from 15° to 90° for the sensor with a deposition of 0.276 g of AgNW@ZnONRs. There was no degradation in the response of the sensors after 10,000 bending cycles, as they have excellent stability and repeatability, which means they can meet the requirements of wearable sensor applications. Therefore, there is great potential for the practical application of multifunctional AgNW@ZnONRs in flexible sensors.

In-Situ comparative study of photo-induced charge behavior in single-perovskite Cs3Bi2Br9 and double-perovskite Cs2AgBiBr6

While organic-inorganic lead halide perovskites excel in optoelectronic applications, their use is limited by toxicity and degradation. Consequently, lead-free alternatives like Cs2AgBiBr6, offering greater stability and diverse applications, have been investigated. However, the fundamental structural, optical, and electronic properties of Cs2AgBiBr6 remain insufficiently understood. In this study, we compared the exciton dynamics and photo-induced charge separation in Cs3Bi2Br9 and Cs2AgBiBr6 films using in-situ surface techniques. Both materials display similar surface photovoltage (SPV) peaks in the 450–500 nm range, supporting the hypothesis of Bi 6s-6p orbital transitions in distorted [BiBr6]3− structures. Although many theories propose the presence of self-trapped excitons (STE) in bismuth-based perovskites, sufficient evidence has been lacking. Our observation of a significant redshift in the SPV peak compared to the band edge absorption peak supports STE hypothesis, with Cs2AgBiBr6 showing a more pronounced redshift due to its more complex electronic structure and stronger electron-phonon coupling. Additionally, we observed that Cs2AgBiBr6 exhibits superior charge separation efficiency compared to Cs3Bi2Br9. Notably, Cs2AgBiBr6 shows significantly shorter rise times, indicating more rapid photogenerated charge separation. However, both materials exhibit similar fall times, suggesting comparable charge recombination rates. Light-chopping-frequency dependent SPV measurements further reveal that Cs2AgBiBr6 has a higher charge separation rate than Cs3Bi2Br9. These findings underscore the potential of bismuth-based perovskites for optoelectronic applications and highlight the importance of a comprehensive understanding of their structure-property relationships.

Solution-Processed CsPbBr3 Perovskite Photodetectors for Cost-Efficient Underwater Wireless Optical Communication System.

Underwater wireless optical communication (UWOC) has attracted increasing attention due to its advantages in bandwidth, latency, interference resistance, and security. Photodetectors, as a crucial part of receivers, have been continuously developed with the great progress that has been made in advanced materials. Metal halide perovskites emerging as promising optoelectronic materials in the past decade have been used to fabricate various high-performance photodetectors. In this work, high-performance CsPbBr3 perovskite PDs were realized via solution process, with low noise, a high responsivity, and a fast response. Based on these perovskite PDs, a cost-efficient UWOC system was successfully demonstrated on an FPGA platform, achieving a data rate of 6.25 Mbps with a low bit error rate of 0.36%. Due to lower background noise under environment illumination, perovskite PDs exhibit better communication stability before reaching a data rate threshold; however, the BER increases rapidly due to the long fall time, resulting in difficulty in distinguishing switching signals. Reducing the fall time of perovskite PDs and using advanced coding techniques can help to further improve the performance of the UWOC system based on perovskite PDs. This work not only demonstrates the potential of perovskite PDs in the application of UWOC, but also improves the development of a cost-effective UWOC system based on FPGAs.

Single-photon elimination in liquid scintillation counting with pulse shape discrimination and delayed coincidence

Liquid scintillation counting is widely used in the rapid measurement of beta activity in environmental and biological samples. However, the single-photons generated by chemiluminescence and photoluminescence in liquid scintillation cocktails seriously affect the measurement accuracy of low-energy beta activity. A novel method based on the combination of the signal characteristic analysis and selective gate to eliminate the single-photon signal was developed. A preprocessing circuit made of a fast response time photomultiplier tube (PMT, Hamamatsu R9420), two charge-sensitive preamplifiers (CSP), two comparators, an analog switch and delay-line devices were designed and developed to verify the feasibility and effectiveness. The output signals from the last dynode were characterized in the pulse time and were used to discriminate the beta signals from the single-photon ones. The beta signals were “tagged” through pulse width detection, pulse width-amplitude transform and pulse-height discrimination with the first comparator, the first CSP and the second comparator. The “tagged” beta signal were applied to control the analog switch. The anode signals were specially delayed and then selected by the analog switch to achieve the single-photon signal elimination. Liquid scintillation cocktails containing 14C or NaOH used as beta or single-photon sources were provided to verify the feasibility of the principle. The results showed that the typical fall time of the single-photon and beta signal was 16.05ns and 43.17ns. The single-photon rejection ratio is 2.76 × 10−3 ± 3.89 × 10−5, and the detection efficiency is up to 93.02%±0.59%.

Quantitative analysis of the density of states distribution in N-type polymer filed-effect transistor

In the advancement of polymer field-effect transistors, both p-type and n-type polymer transistors are indispensable because they are the basic components of complementary metal oxide semiconductor (CMOS) logic circuitry. The scarcity of research on the interface properties of n-type polymer transistors, particularly regarding their density of state (DOS) distribution hinders the device modeling and further optimization of n-type polymer transistor. Consequently, the focus on understanding and investigating n-type polymer transistors interface properties holds substantial value and relevance, as it fills a critical knowledge gap in the polymer transistors. In view of this, an n-type poly((N,N0-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl)-alt-5,50-(2,29-bisthiophene)) (N2200) polymer transistor was fabricated and a dynamic quantitative measurement method was utilized to investigate the DOS distribution of polymer transistors. Comparative analyses were conducted on the drain current (ID), carrier charge (Q), and DOS with varying pulse fall times (Tf). Variations in pulse fall times revealed significant differences in the DOS near the edge of the lowest unoccupied molecular orbital (LUMO), with a maximum DOS of 8 × 1013 cm−2 eV−1 observed at Tf = 1000 μs and a maximum of 2 × 1013 cm−2 eV−1 at Tf = 100 μs. By using different Tf, an effective method was successfully utilized for analyzing the effects of water and oxygen molecules on the DOS distribution of n-type polymer transistors.

Ag nanoparticles at p-Si/ MAPbI3 perovskite interface: improved photo responsivity and response speed in photodetection

Although enhanced performances of photovoltaic devices by embedding metal nanoparticals in charge transport layer, doping into active layer bulk, decorating the active layer surface, and inserting at the interface between semiconductor and the electrode were reported, the effect of incorporating metal NPs at the interface of single crystal semiconductor and perovskite is rarely tackled. Herein the effects of incorporating Ag nanoparticals (AgNPs) at p-Si/MAPbI3 perovskite interface on the photodiode performances were investigated. The results showed that compared with reference device (without AgNPs) the photoresponsivity of the device incorporating AgNPs is greatly improved with the exception for light with wavelengths fall in the spectral range where AgNPs have strong optical absorption. This effect is extremely significant for relatively shorter wavelengths in visible region, and a maximal improvement of around 10.6 times in photoresponsivity was achieved. The physical origin of the exception for spectral range that AgNPs have strong optical absorption is the cancelation of scatter resulted enhancement through AgNPs by band-to-band absorption resulted reduction of photocurrent, in which the generated electron has energy near the fermi level and the hole has large effective mass, which relax by nonradiative recombination, thus making not contribution to the photocurrent. More importantly, the AgNP decorated device showed much faster photo response speed than reference device, and a maximal improvement of around 7.9 times in rise and fall time was achieved. These findings provide a novel approach for high responsive and high speed detection for weak light.

Locally Phase-Engineered MoTe2 for Near-Infrared Photodetectors.

Transition-metal dichalcogenides (TMDs) are ideal systems for two-dimensional (2D) optoelectronic applications owing to their strong light-matter interaction and various band gap energies. New techniques to modify the crystallographic phase of TMDs have recently been discovered, allowing the creation of lateral heterostructures and the design of all-2D circuitry. Thus, far, the potential benefits of phase-engineered TMD devices for optoelectronic applications are still largely unexplored. The dominant mechanisms involved in photocurrent generation in these systems remain unclear, hindering further development of new all-2D optoelectronic devices. Here, we fabricate locally phase-engineered MoTe2 optoelectronic devices, creating a metal (1T') semiconductor (2H) lateral junction and unveil the main mechanisms at play for photocurrent generation. We find that the photocurrent originates from the 1T'-2H junction, with a maximum at the 2H MoTe2 side of the junction. This observation, together with the nonlinear IV-curve, indicates that the photovoltaic effect plays a major role in the photon-to-charge current conversion in these systems. Additionally, the 1T'-2H MoTe2 heterojunction device exhibits a fast optoelectronic response over a wavelength range of 700-1100 nm, with a rise and fall times of 113 and 110 μs, respectively, 2 orders of magnitude faster when compared to a directly contacted 2H MoTe2 device. These results show the potential of local phase-engineering for all-2D optoelectronic circuitry.

Enhancing UV light sensitivity of PVP polymer by doping chromium trioxide via the electrospun solutions

Herein, chromium trioxide (Cr2O3) doped Polyvinylpyrrolidone(PVP) nanofibers with high crystallinity and UV light sensitivity are successfully grown onto the glass substrates by electrospun deposition at room temperature. The effect of Cr2O3 concentration on the morphology, structure, and photoluminescence properties of the as-fabricated PVP nanofibers is examined. With the increase in doping concentration of Cr2O3 (i.e., 1, 2 and 3 %), the direct band gap of PVP nanofibers is reduced to 4.05, 4.01, and 3.85 eV, respectively. XRD and FE-SEM results manifest that the crystallinity and diameter of the nanofibers are dependent upon Cr2O3 concentration, i.e., the mean diameter decreases from 600 to 200 nm. Photoluminescence spectra indicate higher UV emission upon the addition of Cr2O3, with greater emission near the band edge for thinner nanofibers. A possible mechanism for the formation of PVP/Cr2O3 nanofibers is addressed in detail. Furthermore, it is found that the sensitivity of the as-fabricated PVP/Cr2O3 detector to UV-light emission strongly depends on Cr2O3 concentration, i.e., good responsivity (2.257 A/W) and specific detectives (9.8 × 1012 cm Hz1/2/W) at a Cr2O3 concentration of 2 % are achieved at a wavelength of 454.1 nm, besides recording the lowest rise and fall times.

Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors.

Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of the utilized semiconductors. This limitation has driven the development of hybrid devices that exceed the capabilities of individual materials. In this study, for the first time, a hybrid heterojunction photodetector based on methylammonium lead bromide (MAPbBr3) polycrystalline film deposited on gallium arsenide (GaAs) was presented, along with comprehensive morphological, structural, optical, and photoelectrical investigations. The MAPbBr3/GaAs heterojunction photodetector exhibited wide spectral responsivity, from 540 to 900 nm. The fabrication steps of the prototype device, including a new preparation recipe for the MAPbBr3 solution and spinning, will be disclosed and discussed. It will be shown that extending the soaking time and refining the precursor solution's stoichiometry may enhance surface coverage, adhesion to the GaAs, and film uniformity, as well as provide a new way to integrate MAPbBr3 on GaAs. Compared to the pristine MAPbBr3, the enhanced structural purity of the perovskite on GaAs was confirmed by X-ray Diffraction (XRD) upon optimization compared to the conventional glass substrate. Scanning Electron Microscopy (SEM) revealed the formation of microcube-like structures on the top of an otherwise continuous MAPbBr3 polycrystalline film, with increased grain size and reduced grain boundary effects pointed by Energy-Dispersive Spectroscopy (EDS) and cathodoluminescence (CL). Enhanced absorption was demonstrated in the visible range and broadened photoluminescence (PL) emission at room temperature, with traces of reduction in the orthorhombic tilting revealed by temperature-dependent PL. A reduced average carrier lifetime was reduced to 13.8 ns, revealed by time-resolved PL (TRPL). The dark current was typically around 8.8 × 10-8 A. Broad photoresponsivity between 540 and 875 nm reached a maximum of 3 mA/W and 16 mA/W, corresponding to a detectivity of 6 × 1010 and 1 × 1011 Jones at -1 V and 50 V, respectively. In case of on/off measurements, the rise and fall times were 0.40 s and 0.61 s or 0.62 s and 0.89 s for illumination, with 500 nm or 875 nm photons, respectively. A long-term stability test at room temperature in air confirmed the optical and structural stability of the proposed hybrid structure. This work provides insights into the physical mechanisms of new hybrid junctions for high-performance photodetectors.

Low Dark Current, High Responsivity, and Self‐Powered MoTe2 Photodetector Integrated With a Thin Film Lithium Niobate Waveguide

AbstractThin film lithium niobate is one of the most crucial platforms in the next generation of integrated optoelectronics because of its ability to integrate tight optical confinement, low optical loss, and active optical functions. A current challenge in the field of thin film lithium niobate photonics is the development of high‐performance photodetectors to achieve multifunctional photonic integrated circuits. This study introduces a high‐performance MoTe2 photodetector integrated on a thin film lithium niobate waveguide. The photodetector achieves the lowest dark current and highest on/off ratio among waveguide‐integrated photodetectors on a thin film lithium niobate platform. Due to a slight asymmetry in the behavior of the two electrode contacts of the device, the photodetector also achieves self‐driven. At zero bias and a wavelength of 1310 nm, a dark current of ≈20 pA, and an on/off ratio exceeding 105 are achieved. At a bias voltage of 1 V, the measured dark current, responsivity, and on/off ratio are 1.13 nA, 309 mA/W, and 1.8 × 104, respectively. Notably, the device exhibits fast rise and fall times of 9.3 and 13.5 µs, respectively, accompanied by a high detectivity of 2.58 × 1011 W−1.