Failure Of Light Emitting Diodes Research Articles

Recent developments in thermal management of light-emitting diodes (LEDS): A review

Light Emitting Diodes (LEDs) is one of the newest ways to light up outdoor areas such as streets, stadiums, airports, military bases, harbors, and high mast towers. The main reason for the high focus is power consumption with better brightness. Even though LEDs have so many benefits, researchers should focus on better managing temperatures as the main reason behind the failure of LEDs is overheating. In this article, modern research trends like using heat pipes filled with nanofluids, ionic winds, spray cooling, use of fins, refrigerants, and oil cooling are focused on and discussed concerning LEDs, solar stills, electric vehicle batteries, and different heat transfer devices to develop a new way to handle the heat from higher-wattage LEDs. There is a research thrust in the field of more than one nanoparticle in the base fluid, and its proportions are not analyzed during LEDs cooling study using a heat pipe. It is necessary to control the heat using a more effective technique. Heat pipe with nanofluid is a more efficient, compact, and cost-effective cooling device o reduce LED failure due to higher heat flux. Hence, it is promising to use nanofluid-filled heat pipes to serve the purpose of the life span enhancement of LEDs.

Analysis of thermal and optical characteristics of light-emitting diode on various heat sinks

ABSTRACT Light-emitting diodes (LED) are widely used in today’s world due to its less power consumption and its high luminance capacity. Around 20–30% of energy is converted to light energy and 70–80% of energy is dissipated as heat. The excessive increase in temperature causes failure of LED. An effective thermal management is required for the proper heat dissipation in LED. In this study, the heat dissipation and the optical characteristics of the 16 W LED are studied using different types of aluminium heat sinks. The variation of case and junction temperature and the optical characteristic of LED is measured for different heat sinks. It was observed that heat sink with higher surface area shows the best result in terms of lower case and junction temperature. The higher luminous intensity was observed for the parallel fin type 1 heat sink due to the higher surface area.

Uncertainty Quantification for Junction Temperature of Automotive LED With Die-Attach Layer Microstructure

Junction temperature is a critical metric for reliability evaluation of light-emitting diodes (LEDs) as light sources for automotive lamps. While numerous researchers have quantified the junction temperature accurately, uncertainty factors including electrical–thermal–mechanical boundary conditions and the die-attach layer (DAL) microstructure in automotive LEDs have not been addressed; the propagation of these variables degrades the precision of the junction temperature quantification. In this paper, a junction temperature uncertainty quantification framework involving finite element modeling, the evolution separation spectrum, and Monte Carlo simulation is introduced to build 3-D stochastic finite element models for automotive LEDs with stochastic DAL microstructures. Evolution of the statistical junction temperature probability for three types of automotive LEDs subjected to electrical–thermal–mechanical loadings is discussed and the failure risk is predicted. The results show that the temperature-mechanical displacement coupling of the DAL plays a major role in the junction temperature with regard to automotive boundary loadings, and the thermal power load is more likely to cause junction temperature deterioration of LED with DALs having voids. The automotive LED failure rate is dependent upon the boundary conditions, the DAL microstructures, and the LED numbers. The failure rate for LED modules with DALs having voids is higher than that for modules with uniform DALs; the failure rate is higher in aged LED modules; the failure risk at the given junction temperature threshold increases with increasing LED numbers in the module; and when operating at lower junction temperatures, the voids in LED DALs may not increase the module failure risk.

Failure analysis of GaN-based Light-emitting diode with hole vertical structure

Light-emitting diode (LED) failure mechanism plays an important role in studying and manufacturing LEDs. In this paper, X-ray perspective instrument is used to carry out the non-invasive and real-time X-ray imaging detection of the representative LED packaging products purchased from 5 Chinese companies. A large number of the welded voids are founded in the thermal pad and the void ratio of thermal pad, which represents the ratio of void area to pad area, is more than 30% for all samples. 1 W warm white light LED of GaN-based vertical via structure is selected to study the mechanism of short-circuit invalidation. The method is carried out by the following steps. Firstly, the surface morphologies of failure samples are compared with those of normal samples by visual observation. Secondly, antistatic electric capacity testing instrument is used to detect the existences of the electrical parameter abnormalities of the failure of non-short-circuit samples. Thirdly, decapsulations are operated on samples by using Silica gel dissolving agent. And the microtopographies of the samples are characterized by optical microscope, energy dispersive spectrometer and scanning electron microscopy. Then the cross-sectional morphologies of failure samples are observed. The failure mechanism can be drawn from the characterizations mentioned above. The study shows that the failure mechanism of the vertical structure of GaN-based vias is that the existences of voids in the Ni-Sn alloy back gold layer and solid-crystal layer reduce the interface bonding strength and thermal conductivity of the LED chip. The heat building-up leads to thermal expansion of the air inside the voids, which increases the electrical stress and thermal stress distribution at the LED chip vias. Long-term heat accumulation and higher electrical stress in the through-hole region, where the chip current density is greatest, lead to the crack and break of GaN epitaxial layer, which is so brittle and fragile, around the through-hole region. It can eventually lead to short-circuit of PN junction and then failure of LED. Back gold layer is the heat-conductive and electric-conductive channel of LED. The concentrations of thermal stress and electrical stress caused by voids in the back gold layer further lead to the uneven current distribution on the chip. This is the main reason why GaN epitaxial layer cracks and breaks. Voids in the back gold layer and solid-crystal layer are the direct and indirect causes of LED short-circuit failure, respectively. Therefore, the packaging process should be standardized to avoid the void occurrence, based on the reasons why voids exist. It can finally improve reliability of LED.

Exploring failure mechanisms of near ultraviolet AlGaN/GaN light-emitting diodes by reverse-bias stress in water vapour

Reliability tests of GaN near UV light–emitting diodes (LED) were investigated by reverse–bias stress in water vapour. Various electrical, optical and material characterisations were performed to examine degradation trend and failure mechanism. On the basis of multiple material analyses, including scanning electron microscopy (SEM) with focus ion beam (FIB), energy dispersive X–ray spectrometry (EDX) and secondary ion mass spectroscopy (SIMS), deformation of the metal contact and the electromigration of Au could cause the increase of the leakage and reverse–bias electroluminescence, indicating some damaged high electric areas might be generated, which lead to LED failures. The characterisation techniques might resolve the long–term LED failure reasons. Furthermore, the reverse–bias LED operations are promising for short–time screening of the Near UV LED quality for future industrial applications.