In present manuscript, the optical and electrical properties of ZnO thin films under the effect of ligand, synthesis & annealing temperature, seed layer have been studied in detail. ZnO thin film grown at 80 °C reaction temperature tuned transmittance (at 550 nm) to ∼37% (post-annealed sample) as compared to pre-annealed samples’ ∼5%. Observed Refractive index (n) found inversely proportional to their transmittance & refractive index (n) for corresponding sample has been tuned from 1.75 to 1.26. The intensity ratio of near band emission (INBE) to deep band emission (IDBE) is drastically enhanced after annealing of ZnO thin films which is confirmed in photoluminesecnce study. The uniform & dense ZnO nanorods’ growth, optimum transparency & prominent UV range dominated emission bring resistivity down to 1012 ohm-cm. The synthesized ZnO thin films having best suited structural, optical and electrical properties which can be utilized in fabrications of low cost luminesent devices.