Fabrication Of Memristive Devices Research Articles

Fabrication of highly sensitive memristive device using NiO nanoparticles synthesized by single step wet chemical method

Single step wet chemical method is used to prepare molar concentration varied NiO nanoparticle using PVP as the capping agent. Structural, optical and electrical properties are investigated on the prepared samples and are correlated with growth. TEM shows particle size distribution ∼ 3–4 nm synthesized in the range 0.001–1 M which agrees with XRD and optical measurements. Red shift in absorption is observed in optical measurement with enhancing molarity. Because of lesser size distribution of NiO nanoparticles, larger native defect in the form of oxygen vacancies is expected which may beutilized in fabrication of memristive devices. The sensitivity of the devices is estimated through Roff/Ron and area of pinched hysteresis loopwhich shows promising result. Higher sensitivity is explained due to incorporation of more oxygen vacancies during the growth of NiO nanoparticles synthesized at higher concentration. The experimental memristive characteristics are validated through theoretical model fitting using different window functions.

Nanoscale resistive switches: devices, fabrication and integration

With CMOS scaling approaching its limits, there is a great need for advancements in novel devices, disruptive fabrication technologies, advanced materials and alternative computer architectures for future nanoelectronic systems. The emergence of memristive devices is one of promising solutions for the post-CMOS era. In this paper, we first introduce the fabrication of transition metal oxide based memristor cross-bars using nanoimprint lithography (NIL). The fabrication technique is further improved by using only one NIL step, reducing the fabrication efforts and improving the device performance. With shadow evaporation, a host of devices such as 2-terminal lateral memristors and 3-terminal memristive devices (memistors) are also demonstrated. By building memristor cross-bar arrays on foundry-made CMOS substrates using NIL, we have implemented hybrid nano/CMOS architecture. This hybrid chip provides an FPGA-like functionality with reconfigurable memristors defining data paths to wire logic gates into digital circuits. Future trends and issues with fabrication of memristive devices are also briefly discussed.