Extreme Ultraviolet Light Source Research Articles

RHDLPP: A multigroup radiation hydrodynamics code for laser-produced plasmas

In this paper, we introduce the RHDLPP, a flux-limited multigroup radiation hydrodynamics numerical code designed for simulating laser-produced plasmas in diverse environments. The code bifurcates into two packages: RHDLPP-LTP for low-temperature plasmas generated by moderate-intensity nanosecond lasers, and RHDLPP-HTP for high-temperature, high-density plasmas formed by high-intensity laser pulses. The core radiation hydrodynamic equations are resolved in the Eulerian frame, employing an operator-split method. This method decomposes the solution into two substeps: first, the explicit resolution of the hyperbolic subsystems integrating radiation and fluid dynamics; second, the implicit treatment of the parabolic part comprising stiff radiation diffusion, heat conduction, and energy exchange. Laser propagation and energy deposition are modeled through a hybrid approach, combining geometrical-optics ray-tracing in sub-critical plasma regions with a one-dimensional solution of the Helmholtz wave equation in super-critical areas. The thermodynamic states are ascertained using an equation of state, based on either the real gas approximation or the quotidian equation of state (QEOS). For ionization calculations, the code employs a steady-state collisional-radiation (CR) model using the screened-hydrogenic approximation. Additionally, RHDLPP includes RHDLPP-SpeIma3D, a three-dimensional spectral simulation post-processing module, for generating both temporally-spatially resolved and time-integrated spectra and imaging, facilitating direct comparisons with experimental data. The paper showcases a series of verification tests to establish the code's accuracy and efficiency, followed by application cases, including simulations of laser-produced aluminium (Al) plasmas, pre-pulse-induced target deformation of tin (Sn) microdroplets relevant to extreme ultraviolet lithography light sources, and varied imaging and spectroscopic simulations. These simulations highlight RHDLPP's effectiveness and applicability in fields such as laser-induced breakdown spectroscopy, extreme ultraviolet lithography sources, and high-energy-density physics.

Research on High-Precision Position Detection Based on a Driven Laser Spot in an Extreme Ultraviolet Light Source

Laser-spot-location detection technology based on photodetectors is widely used in the aerospace, medical, military and communication fields. However, most of the current research focuses on continuous laser detection in the visible and near-infrared bands, and the real-time high-precision position detection of a long-wave infrared pulsed laser is lacking. In this paper, a spot-position detection system based on a four-quadrant detector is designed for a 10.6 μm CO2-driven laser in extreme ultraviolet light source, and a second-order extended error compensation algorithm based on a Gaussian-spot model is proposed. Finally, the algorithm is verified and analyzed experimentally by a spot-position detection system under both focusing and defocusing conditions. The experimental results show that the root-mean-square error, maximum absolute error and average absolute error of the second-order error compensation algorithm are significantly reduced compared with the traditional algorithm, and the detection accuracy of the spot-position is better than 9 μm. The above results show that this spot-position detection system has obvious advantages and high accuracy, which can realize the high-precision real-time detection of a laser’s spot position to obtain accurate spot position information, provide feedback adjustments for subsequent beam pointing control, and provide a theoretical basis for the beam pointing stability of the extreme ultraviolet light source system.

Simulation of extreme ultraviolet radiation of laser induced discharge plasma

Extreme ultraviolet (EUV) light source is an important part of EUV lithography system in semiconductor manufacturing. The EUV light source requires that the 4p<sup>6</sup>4d<sup><i>n</i></sup>-4p<sup>5</sup>4d<sup><i>n</i>+1</sup> + 4d<sup><i>n</i>-1</sup>4f transitions of Sn<sup>8+~13+</sup> ions emit thousands of lines which form unresolved transition arrays near 13.5 nm. Laser-induced discharge plasma is one of the important technical means to excite target into an appropriate plasma condition. Laser-induced discharge plasma has a simple structure and a low cost. It also has important applications in mask inspection, microscopic imaging, and spectral metrology. In the design and production process, there are many factors that can influence the conversion efficiency, such as current, electrode shape, and laser power density. The simulation method is a convenient way to provide guidance for optimizing the parameters. In this paper, a completed radiation magneto-hydrodynamic model is used to explore the dynamic characteristics of laser-induced discharge plasma and its EUV radiation characteristics. To improve the accuracy, a more detailed global equation of state model, an atomic structure calculation model including relativistic effect and a collision radiation model are proposed simultaneously. The simulation reconstructs the discharge process effectively, which is divided into five stages in the first half cycle of current, including expansion of laser plasma, column formation of discharge plasma, diffusion of discharge plasma, contraction of discharge plasma, and re-diffusion of discharge plasma. It is revealed that the pinch effect during the current rising time exerts a significant influence on the generation of EUV radiation. The conversion efficiency of EUV radiation is still low under our existing conditions, and hopefully a higher rising rate of current can improve the conversion efficiency in the future work.

Efficient photo-dissociation-induced production of hydrogen radicals using vacuum ultraviolet light from a laser-produced plasma

One of the critical issues in lithography using extreme ultraviolet (EUV) light is tin contamination of the EUV collector mirrors in the tin-based LPP-EUV light source. The contamination can be removed by the reaction of tin atoms with hydrogen radicals producing stannane (SnH4), which is gaseous at the normal temperature. Hydrogen radicals can be produced from hydrogen molecules through photo-dissociation and photo-ionization induced by broadband radiation emitted from the EUV light source. In this work, an efficient production of hydrogen radical using vacuum ultraviolet (VUV) light emitted from laser-produced high-Z plasma is experimentally demonstrated. A two-dimensional radiation hydrodynamic simulation, coupled with photoionization and photo-dissociation cross sections, also shows the efficient hydrogen radical production by increased VUV light emission, as observed in the experiment.

High Power and High Stability 13.5 nm Extreme Ultraviolet Light Source Driven by High‑Order Harmonics

High Power and High Stability 13.5 nm Extreme Ultraviolet Light Source Driven by High‑Order Harmonics

High Harmonic Extreme Ultraviolet Light Source with High Repetition Rate and Power

High Harmonic Extreme Ultraviolet Light Source with High Repetition Rate and Power

Photoresist Fabrication for High-NA EUV Lithography: Material and Mechanism

Extreme ultraviolet (EUV) lithography is critical for the semiconductor industry nowadays. However, high-numerical aperture (NA) EUV systems face challenges in many areas, especially in photoresists. This paper reviews requirements and recent progress in EUV photoresists for high-NA EUV lithography. The key needs for photoresists include high resolution, low stochastic defects, minimal pattern collapse, and high sensitivity. Proposed solutions involve new photoresist materials and mechanisms, such as metal-containing photoresists, non-chemically amplified photoresists and tin-oxo cages photoresists. Basic fabrication and processing procedures are also discussed. Other than photoresists, the weak EUV light source also heavily restrains the development of photoresists. In the future, improvements in EUV light sources and patterning techniques will further help high-NA EUV photoresist development. In summary, the realization of high-NA EUV lithography system depends critically on the breakthrough of photoresists, while solutions are emerging to meet demanding requirements from various directions. Overall, these results shed light on guiding further exploration of next generation lithography.

Enhancement of Sn plasma EUV emission by double-sided laser illumination

Advancements in state-of-the-art nanolithography technology over the past decade have been raising an ongoing demand for improvement of the power and efficiency of extreme-ultraviolet (EUV) light sources that stand at its heart. This study introduces a double-sided laser illumination scheme aimed at enhancing EUV emission from such a laser-produced Sn plasma source. Using a solid-state laser, experiments were conducted with suspended solid Sn targets of varying thicknesses, evaluating the resulting effect on EUV output intensity. A significant increase in EUV emission to the collection side was observed due to the addition of illumination of the other side, particularly for thinner targets. For targets with thicknesses of 60 and 20 nm, an increase between 50% and 150% in EUV emission was detected in comparison with single-sided illumination. Extrapolating to a long laser pulse that burns through the target, the enhancement is projected to be 17% for a 300 nm thick target. These results highlight a promising way for further improvement of output power and energy efficiency in next-generation EUV light sources.

Inductively coupled plasma light source driven by an all solid-state pulsed power system

We describe the development of an extreme ultraviolet (EUV) light source using a discharged produced plasma. The source uses a xenon plasma in a Z-pinch configuration to produce 13.5 nm ± 1% bandwidth radiation. The source is used in the semiconductor industry for metrology, mask inspection, and resist development. Based on the previously developed inductively coupled Z-pinch design, this improved source uses an innovative transistor-based switching system that overcomes the limitations of traditional magnetically switched systems. With this configuration, which includes a pre-ionization stage and direct xenon fueling, both repetition rate and energy per pulse can be greatly increased. Consequently, EUV radiation output, measured in brightness or power, can be also be increased. We describe the driver for this system and the resulting performance.

Review of the 1st EUV Light Sources Code Comparison Workshop

We review the results of the 1st Extreme Ultraviolet (EUV) Light Sources Code Comparison Workshop. The goal of this workshop was to provide a platform for specialists in EUV light source plasma modeling to benchmark and validate their numerical codes using well-defined case studies. Detailed consideration of a plethora of atomic collisional and radiative processes is required for modeling EUV light source plasmas. Eight institutions spanning four countries contributed data to the workshop. Two topics were addressed, namely (i) the atomic kinetics and radiative properties of tin plasmas under EUV-generating conditions and (ii) laser absorption in a fully ionized, one-dimensional hydrogen plasma. In this paper, we summarize the key findings of the workshop and outline plans for future iterations of the code comparison activity.

Novel MCP-Windowed EUV Light Source and Its Mass Spectrometric Application for Detecting Chlorinated Methanes.

Various vacuum ultraviolet (VUV) lamps are simple and convenient VUV light sources for mass spectrometry and other research fields. However, the strong absorption of high-energy photons by window materials limits the application of an extreme ultraviolet (EUV) light. In this study, a novel high-flux EUV light source is developed using a microchannel plate (MCP) window to transmit 73.6 nm (16.9 eV) EUV light generated via the radio frequency (RF) inductive discharge of neon. The MCP used is a 0.5 mm thick glass plate with a regular array of microtubes (12 μm i.d.). The photon fluxes of the EUV light source with the MCP window (12 mm i.d.) and an aperture (1.8 mm i.d.) are ∼1.31 × 1014 and ∼9.80 × 1012 photons s-1, respectively, while their corresponding leakage flow rates of the discharge gas are 0.062 and 0.046 cm3 atom s-1, according to the contrast experiments. The transmission efficiency of the MCP to the EUV light is 30.2%, with a 1.2% deviation. An EUV photoionization time-of-flight mass spectrometer (EUV-PI-TOFMS) is built to validate the practicality of the MCP-windowed EUV light source further. The detection sensitivities in 30 s measurements for methyl chloride (CH3Cl), methylene chloride (CH2Cl2), trichloromethane (CHCl3), and carbon tetrachloride (CCl4) in synthetic air are 4366, 4120, 5854, and 4095 counts ppbv-1, respectively. The corresponding 3σ limits of detection (LODs) are 42, 34, 24, and 15 pptv. This study develops a new feasible method for efficiently utilizing high-energy EUV light, with many application prospects in scientific research.

Optimization of extreme ultra-violet light emitted from the CO2 laser-irradiated tin plasmas using 2D radiation hydrodynamic simulations.

We studied Extreme Ultra-Violet (EUV) emission characteristics of the 13.5 nm wavelength from CO2 laser-irradiated pre-formed tin plasmas using 2D radiation hydrodynamic simulations. Our results indicate that when a CO2 laser irradiates pre-formed tin plasma, the heated plasma expands towards the surrounding plasma, steepening the density at the ablation front and lowering the density near the laser axis due to the transverse motion of the plasma. Consequently, the laser absorption fraction decreases, and the contribution to EUV output from the ablation front becomes dominant over that from the low-density plasmas. We estimated that an EUV conversion efficiency of 10% from laser to EUV emission could be achieved with a larger laser spot size, shortened laser pulse width, and longer pre-formed plasma density scale length. Our results offer one optimizing solution to achieve an efficient and powerful EUV light source for the next-generation semiconductors.

Sub-nanometer finishing of polycrystalline tin by inductively coupled plasma-assisted cutting

Polycrystalline tin is an ideal excitation material for extreme ultraviolet light sources. However, the existence of grain boundary (GB) limits the surface roughness of polycrystalline tin after single-point diamond turning (SPDT). In this work, a novel method termed inductively coupled plasma (ICP)-assisted cutting was developed for the sub-nanometer finishing of polycrystalline tin. The relationship between ICP power, processing time, and modification depth was established by thermodynamic simulation, and the fitted heat transfer coefficient of polycrystalline tin was 540 W/(m2·K). The effects of large-thermal-gradient ICP treatment on the microstructure of polycrystalline tin were studied. After 0.9 kW ICP processing for 3.0 s, corresponding to the temperature gradient of 0.30 K/µm, the grain size of polycrystalline tin was expanded from a size of approximately 20–80 µm to a millimeter scale. The Taguchi method was used to investigate the effects of rotational speed, depth of cut, and feed rate on SPDT. Experiments conducted based on the ICP system indicated that the plasma-assisted cutting method promoted the reduction of the influence of GB steps on the finishing of polycrystalline tin, thereby achieving a surface finish from 8.53 to 0.80 nm in Sa. The results of residual stress release demonstrated that the residual stress of plasma-assisted turning processing after 504 h stress release was 10.7 MPa, while that of the turning process without the ICP treatment was 41.6 MPa.

Proposal for Observing XUV-Induced Rabi Oscillation Using Superfluorescent Emission.

Intense x-ray and extreme ultraviolet (XUV) light sources have been available for decades, however, due to weak nonlinear interaction in the XUV photon energy range, observation of Rabi oscillation induced by XUV pulse remains a very challenging experimental task. Here we suggest a scheme where photoionization of a He medium by an intense XUV pump pulse is followed by a strong population inversion and Rabi oscillation at the He^{+}(1s-3p) transition and is accompanied by superfluorescence (SF) of the 7.56eV pulse at the He^{+}(3p-2s) transition. Our numerical simulations show that the Rabi oscillation at the He^{+}(1s-3p) transition induced by an XUV pulse with photon energy 48.36eV results in significant signatures in the SF spectra, allowing us to identify and characterize the XUV induced Rabi-oscillatory regime. The proposed scheme provides a sensitive tool to monitor and control ultrafast nonlinear dynamics in atoms and molecules triggered by intense XUV.

Thomson scattering measurements of electron temperature and electron density in laser-driven Gd plasmas

In this study, we demonstrate the laser intensity scaling of electron temperature in Gd laser-produced plasmas (LPPs) through experiment and simulation. The spatial and temporal profiles of electron density ne and temperature Te in Gd LPPs were directly measured during a drive laser pulse duration of 7 ns at a laser wavelength of 1064 nm using collective Thomson scattering. We found that the measured maximum Te value in Gd LPPs increases with increasing laser intensity IL , with the dependence , in the IL range of 1010–. Radiation-hydrodynamic simulation code of the STAR-2D was performed under identical conditions to those used in the experiment, and extended further to higher laser intensities of up to ; the simulated Te was found to be in good agreement with the experimental data over the used IL range. The simulation indicates that higher overall maximum Te typically exists 50–70 above the target and modifies the dependence as . Experiments reveal that a laser intensity of is required to achieve the optimum condition ( 100 eV and ion charge states , at –) for efficient beyond extreme ultraviolet (EUV) light source. In addition, two spot sizes (150 and 250 in diameter) were used to study the effect of the spot size on the Te profile. Our experimental findings, supported by the simulations, show that larger spots can create uniform Te profiles, higher maximum Te , and larger high-Te regions in LPPs. The results and scaling laws presented in this study provide important information for developing more powerful and energy-efficient EUV light sources.

High-energy parametric oscillator and amplifier pulsed light source at 2-µm.

A laser system generating high-energy pulses at 2-µm wavelength with pulse widths tunable from 10-24 ns is described. It comprises an optical parametric oscillator that generates mJ-level signal seed radiation and an optical parametric amplifier that boosts the output to 800 mJ of combined signal and idler when pumped with 2 J pulses of 1064-nm laser light. The system operated with KTP crystals and running at 10 Hz repetition rate is characterized in the spatial, temporal, and spectral domains. The effect of saturation leads to an output pulse approaching flat-top spatial and box-shaped temporal profiles, as desired in various applications. The amplified pulses can be imaged down to sub-100 µm diameters, making this laser system a suitable driver for plasma sources of extreme ultraviolet light.

A laser-produced plasma source based on thin-film Gd targets for next-generation extreme ultraviolet lithography

We have studied laser-produced plasma based on mass-limited thin-film Gd targets for beyond the current extreme ultraviolet (EUV) light source of 13.5 nm wavelength based on tin. The influences of the laser intensity on the emission spectra centered around 6.7 nm from thin-film Gd targets were first investigated. It is found that the conversion efficiency of the produced plasma is saturated when the laser intensity goes beyond 2 × 1011 W cm−2. We have systematically compared the emission spectra of the laser-produced plasma with the changes in the thicknesses of the thin-film Gd targets. It is proved that a minimum-mass target with a thickness of 400 nm is sufficient to provide the maximum conversion efficiency, which also implies that this thickness is the ablation depth for the targets. These findings should be helpful in the exploration of next-generation EUV sources, as the thin-film Gd targets will reduce the debris during the plasma generation process compared with the bulk targets.

Enhanced Extreme Ultraviolet Free Induction Decay Emission Assisted by Attosecond Pulses

We demonstrate the extreme ultraviolet free induction decay emission that can be significantly enhanced by employing isolated attosecond pulses. The near infrared pulses are applied to excite the neon atoms into Rydberg states coherently, and isolated attosecond pulses are used to manipulate populations of the Rydberg states and the subsequent free induction decay process. The time resolved experimental measurement of dependence of the resonance emission yield would help to understand the buildup dynamics of population of excited states. The enhancement assisted by attosecond pulses can serve as a mechanism to develop high-flux extreme ultraviolet light sources.

Toward streaked collective Thomson scattering measurements on an extreme ultraviolet plasma light source

We show through forward modeling calculations that streaked collective Thomson scattering measurements are feasible on laser-produced tin plasmas generated under conditions relevant for extreme ultraviolet lithography. Using a 532 nm probe laser beam, the feasibility of simultaneous measurements of electron plasma wave (EPW) and ion acoustic wave (IAW) spectra is investigated. Absolute photon counts for laser scattering off both waves are calculated. Probe laser electron heating and bremsstrahlung background radiation effects are accounted for. While a large spatiotemporal region can be successfully probed based on the IAW feature, only one measurement location can be accessed through the EPW as a result of the low signal to noise ratio. A portable/traveling tabletop system is proposed.

Characterisation of engineered defects in extreme ultraviolet mirror substrates using lab-scale extreme ultraviolet reflection ptychography

Ptychography is a lensless imaging technique that is aberration-free and capable of imaging both the amplitude and the phase of radiation reflected or transmitted from an object using iterative algorithms. Working with extreme ultraviolet (EUV) light, ptychography can provide better resolution than conventional optical microscopy and deeper penetration than scanning electron microscope. As a compact lab-scale EUV light sources, high harmonic generation meets the high coherence requirement of ptychography and gives more flexibilities in both budget and experimental time compared to synchrotrons. The ability to measure phase makes reflection-mode ptychography a good choice for characterising both the surface topography and the internal structural changes in EUV multilayer mirrors. This paper describes the use of reflection-mode ptychography with a lab-scale high harmonic generation based EUV light source to perform quantitative measurement of the amplitude and phase reflection from EUV multilayer mirrors with engineered substrate defects. Using EUV light at 29.6nm from a tabletop high harmonic generation light source, a lateral resolution down to ∼88nm and a phase resolution of 0.08rad (equivalent to topographic height variation of 0.27nm) are achieved. The effect of surface distortion and roughness on EUV reflectivity is compared to topographic properties of the mirror defects measured using both atomic force microscopy and scanning transmission electron microscopy. Modelling of reflection properties from multilayer mirrors is used to predict the potential of a combination of on-resonance, actinic ptychographic imaging at 13.5nm and atomic force microscopy for characterising the changes in multilayered structures.