Metasurfaces have been widely used to terahertz (THz) modulators due to their unique electromagnetic (EM) modulation properties. However, to realize ultrafast and efficient control of the active metasurfaces remains a critical challenge. Herein, we first demonstrate a multifunctional metasurface modulator based on metal square rings, which have central rotational symmetry with local asymmetry. The former captures more EM energy to achieve strong enhancement of the local EM responses, and the latter generates high quality factor (Q-factor) Fano resonance. By scaling the unit structure, the resonant frequency shifts in an ultra-wideband range of ∼0.29-10 THz, which shows a linear relation between the Q-factor and the scaling factor, and an exponential variation between the full width at half maximum (FWHM) and the scaling factor. The results provide an effective approach to predict the frequency selection characteristics of the modulators in the THz regime. More importantly, by embedding the silicon into the specific position of the metasurface, external optical control results in the unit structure is constructed from meta-atom to molecularization model, the shifting of resonant frequency and the multi-level modulation of amplitude are realized, and the maximum modulation depth (MD) reaches ∼100 %. By systematically studying the dynamics of frequency and amplitude regulation, benefiting from the ultra-short relaxation time of the photo-carriers in silicon bridge, an ultrafast full recovery time of 2000 ps is achieved. Combined with the local field characteristics, the scaled unit structure achieves efficient modulation of the resonant frequency and amplitude under optical pumping, which provides a promising approach for the development of active metasurface modulator suitable for the whole THz band. This work demonstrates the viability of optical control molecularization of specific meta-atoms is applicable to the entire THz band, which has great potential use for future state-of-the-art THz modulators.