Extended Resonance Technique Research Articles

A 24-GHz Modular Transmit Phased Array

This paper presents a 24-GHz modular transmit phased array based on the extended-resonance technique. The extended-resonance technique, capable of obviating the need for separate power divider and phase shifters, is utilized along with heterodyne mixing in the proposed phased array. Heterodyne mixing allows phase shifting to be performed at lower frequencies. A modular approach is exploited to realize a scalable phased-array design. The design complexity associated with large phased arrays can be significantly reduced by using this approach. Moreover, a modified extended-resonance circuit topology to enhance the scan range is proposed. As a proof-of-principle, the 24-GHz transmit phased array is fabricated and the measurement results are presented.

A New $X$-Band Low Phase-Noise Multiple-Device Oscillator Based on the Extended-Resonance Technique

A novel multiple-device oscillator based on the extended-resonance technique is proposed. This oscillator achieves low phase noise through optimizing the circuit's group delay. Based on this technique, an X-band four-device SiGe HBT oscillator has been designed, fabricated, and tested. The measured phase noise is - 119 dBc at 100-kHz offset frequency. To the authors' best knowledge, this oscillator shows the lowest phase-noise performance among other reported X-band microwave planar hybrid free-running oscillators.

A class-B push-pull power amplifier based on an extended resonance technique

A class B push-pull power amplifier based on an extended resonance power combining technique is presented. In this design, advantages of push-pull power amplifier, such as doubling power capability and reduced common lead effects, have been achieved with a simple and compact circuit topology. The measured power combining efficiency (PCE) is 93% with 1-dB bandwidth of 12.6% at 1.75 GHz. The measured output power at 1-dB compression is 30 dBm with power added efficiency (PAE) of 59%.

A class-E power amplifier based on an extended resonance technique

In this paper, a class-E power amplifier using four 1-W GaAs MESFET's at 935 MHz is demonstrated using a new extended resonance power-combining technique. A microstrip amplifier based on this technique was designed and fabricated which combines four 1-W Siemens CLY5 GaAs MESFET's with 67% power-added efficiency at 935 MHz.

A new lumped-elements power-combining amplifier based on an extended resonance technique

A technique for combining power FETs in the output stage of a power amplifier is presented. The active devices are combined with simple inductor/capacitor networks and can be laid out across a single die while still allowing each device to be independently accessed for biasing. The inductors can range from fully integrated spirals to simple wire bonds, making this technique applicable over a broad range of frequencies. For linear RF power applications this is an effective technique for spreading more heat, while at high frequencies the junction parasitics are easily absorbed into this type of design. DC losses are minimized since each device can be biased individually, furthermore, it is possible to adjust the bias separately for each device to account for device nonuniformity across the die.

An eight-device extended-resonance power-combining amplifier

An extended resonance technique for designing power amplifiers is investigated. This technique provides a planar power-combining structure whose primary distinction from conventional structures is that it does not require quarter-wave or multiple quarter-wave spacing between devices. A theoretical analysis of extended-resonance combiners is presented, followed by experimental data from an eight-device power amplifier. This approach is adaptable to monolithic circuit-fabrication techniques and should be useful for millimeter-wave applications.

A 26-MESFET spatial power-combining oscillator

Several spatial power-combining oscillators based on an extended resonance technique was designed and fabricated. Experimental results for these combiners are provided and their performance is compared. An effective isotropic radiated power (EIRP) of 19.9 W at 9.923 GHz was obtained from a 26-MESFET spatial power combiner. The total radiated power for this combiner was 160 mW. The measured and predicted radiation patterns in E- and H-planes are also compared.

A power amplifier based on an extended resonance technique

A new power amplifier based on an extended resonance technique is presented. This technique produces high power through multiplying the power handling capability of a single device by the number of devices employed while maintaining the gain of a single-device amplifier. An X-band power combining amplifier employing four 100 mW MESFET's was designed and constructed. The small signal gain was measured at 11.5 dB, and a maximum of 480 mW was obtained at 9.57 GHz with a power-added efficiency of 30.8%. >

Spatial power combining oscillators based on an extended resonance technique

Several spatial power combining oscillators employing an extended resonance technique have been designed and fabricated for the first time on single layer microstrip structures. Power combining efficiency, circuit tolerance to individual device variations and the effect of device failures on circuit performance were studied. Results obtained indicate exceptional circuit tolerance to individual device parameter variations as well as to device failures. The combiners described herein were designed and operated at 8 GHz with effective radiated powers of 0.22 W, 0.64 W and 4.3 W for a two, four and a nine device combiner, respectively. >

A nine-MESFET two-dimensional power-combining array employing an extended resonance technique

A spatial power combining circuit that forms a single resonant structure from many active devices is introduced. A large-signal analysis of this power combiner was performed. Based on these results, a two- and a nine-MESFET two-dimensional combiner driving two- and nine-patch antenna elements, respectively, were designed and fabricated. Measured results are presented. An effective radiated power of 6.06 W at 7.33 GHz was obtained from the nine-MESFET combiner.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>