Exponential Amplifier Research Articles

A D/A converter based on a pseudo-exponential function

In this article, a D/A converter employing a novel generalised technique that achieves wide-output linear-in-dB dynamic ranges is proposed. The feasibility of the approach is demonstrated by constructing a linear-in-90 dB exponential amplifier. In addition, a pseudo-exponential circuit employing two operational amplifiers and a few resistors that simulate the exponential function over a predefined range of 15 dB is proposed as a building block. The theoretical results were experimentally confirmed using readily available components in a circuit with a static power consumption of 22 mW when powered with a ±2.75 V supply.

1.25Gbps PON용 버스트 모드 광 수신기

We designed a burst mode optical receiver for 1.25Gbps PON(Passive Optical Network), fabricated it using BiCMOS foundry. We minimized the loss of the data in the front of the burst by reducing AGC(Automatic Gain Control) signal generation time using an exponential amplifier. We confirmed that AGC of the burst mode optical receiver functioned well and showed good performance in measurement. However, although the eye of the eye pattern was opened the jitter characteristic was deteriorated due to the heavy waveform distortion.

The Potential of Present Day Lasers as Scientific Probes for Investigating the Structure of Matter, Using an Exponenial Amplifier

A survey of the techniques required to produce photon energy densities in the range 10(17)-10(25) ergs cm-(3) is given. It is concluded that light amplification using rods cannot achieve these powers and the concept of the exponential amplifier is proposed. It is believed that any laser probe capable of such powers would require the use of neodymium-doped glass. Costs for this ultimate model would be comparable with those for powerful particle accelerators. Initially, the range 10(17)-10(25) ergs cm(-3) could be catered for by conventional flashtube excitation. The upper limits would require excitation by photoemitting diodes, with a 100-A to 200-A band at 8800 A capable of multikilowatt pulsed outputs over 1 cm(2) aperture in a period much less than the 300-700 microsec spontaneous decay time of the laser level. If a suitable sensitizer could be found, then a wider range of photoemitting diodes could be considered.