Excellent Optoelectronic Properties Research Articles

Unveiling the Dual Impact of CuI Layer and Se Content in Sb2(S, Se)3 Photocathodes for Solar Water Splitting

Sb2(S, Se)3 is a promising photocathode for photoelectrochemical (PEC) conversion of solar energy to hydrogen due to its excellent optoelectronic properties, stability, and low toxicity. For such applications, a p–i–n device architecture is favorable for efficient charge separation, with the p‐type layer improving hole extraction while the n‐type layer facilitates electron injection into the electrolyte for hydrogen evolution reaction. However, the lack of suitable p‐type layers for depositing a uniform layer of Sb2(S, Se)3 photocathode constrains the device architectures for PEC water splitting. In this work, various p‐type materials (e.g., NiO, CuS, and CuI) are investigated. Photocathodes fabricated on CuI demonstrate superior performance due to improved hole extraction and uniform growth of Sb2(S, Se)3 absorber layer. The Se/S ratio is adjusted to further fine‐tune the photocathode's absorption, influencing the efficiency of charge carriers’ injection and separation. The overall PEC performance reaches the maximum value when Se/S = 20%, achieving up to 4.2 mA cm−2 with stable photocurrents sustained for 120 min under standard illumination conditions, achieving the highest‐reported photocurrent among S‐rich‐solution‐processed Sb2(S, Se)3 photocathodes. In this work, new avenues are opened for the design of p–i–n Sb2(S, Se)3 PEC devices.

Inorganic Semiconductor-Based Flexible UV Photodetector Arrays Achieved by Specific Flip-Chip Bonding.

In recent years, flexible UV photodetectors (PDs) with complex environmental adaptability and great wearability have attracted the attention of researchers worldwide. Wide bandgap inorganic semiconductor materials with excellent optoelectronic properties and mechanical stability are key functional materials for UV PD devices. However, the high temperature processing and inherent brittleness limit the further application of high-quality inorganic semiconductors in the field of flexible optoelectronics. In this work, we develop a specific flip-chip bonding fabrication technique that utilizes high-temperature treated inorganic semiconductor materials for high-performance flexible UV detection devices. Leveraging this technique, a 7 × 7 pixel flexible UV photodetector array (UV-FPDA) device based on a vertical architecture Mg-doped ZnO/NiO (Mg:ZnO/NiO) heterojunction transistor is built. The UV-FPDAs exhibit a high responsivity of 75.8 A/W and an outstanding detectivity of 8.5 × 1012 Jones. Besides, the UV-FPDAs also demonstrate excellent bending stability. Furthermore, the photoresponse characteristics of each pixel are trained and learned by an artificial neural network to achieve clear imaging of UV light information. Our results provide a new pathway for the application of inorganic semiconductors in the field of high-performance flexible UV photodetection.

ε-InSe-based heterojunction photodetector and its performance modulation by growth pressure

Indium selenide (InSe) is a III-VI semiconductor with excellent optoelectronic properties that has been widely studied. In this work, a series of InSe films are successfully prepared by pulsed laser deposition (PLD) under different growth pressures ranging from 0.1 to 10 Pa. The structural characterization shows that the InSe films have a ε phase structure with the best film quality obtained at 1 Pa. The photoresponse of ε-InSe/Si heterojunction photodetectors (PDs) is thoroughly investigated under illumination of different laser wavelengths and powers. The results demonstrate that the photoresponse is strongly dependent on the growth pressure of the InSe films, with the optimal performance achieved at a growth pressure of 1 Pa. The ε-InSe/Si heterojunction PD at 1 Pa exhibits an ultra-broadband photoresponse spanning from 360 to 1064 nm with the best responsivity (R) of 6.68 × 10-2 A/W, detectivity (D) of 6.51 × 1010 Jones, external quantum efficiency (EQE) of 12.4 %, and response times of ∼ 35 ms. The influence of growth pressure on the PD performance can be attributed to its effects on the structural and morphological properties of the InSe film. This work provides a promising approach for the preparation of high-performance InSe-based optoelectronic devices.

Ultrafast Response and Broad Detection Range of a Ternary Cation Perovskite Single-Crystal Thin Film Photodetector for Imaging.

FA-MA-Cs ternary cation perovskite exhibits excellent optoelectronic properties and high stabilities against humidity and light soaking and thus has aroused extensive attention in polycrystalline thin film solar cells. Compared with polycrystalline counterparts, FA-MA-Cs ternary cation perovskite single-crystal thin films (SCTFs) have lower defects, better carrier transport capacity, and stability because of lacking grain boundary defects. However, the immature growth technology of SCTFs restricts digging out its optoelectronic potential. Here, we proposed an improved space-confined method to grow large area FA0.9 MA0.05Cs0.05PbI2.7Br0.3 SCTFs using a tunable heating area to control the nucleation and growth process. Its area reaches 64 mm2 with a thickness of 26 μm. The SCTF exhibits high crystallinity, low defect density, long carrier lifetime, and high moisture resistance stability. Besides, a photosensitive chip based on a planar metal-semiconductor-metal photodetector demonstrates linear response to the three primary colors, with a photosensitive range that is 1.5 times that of protocol 3 wide color gamut. Under high-frequency light sources, the on/off ratio reaches 3.9 × 103, and the response time can be as low as 400 ns. Such ultrafast response speed and broad photosensitive range are successfully achieved for imaging applications.

Characterization of bulk trap density using fully I–V-based optoelectronic differential ideality factor in multi-layer MoS2 FETs

Abstract Molybdenum disulfide (MoS2) has excellent optoelectronic properties, chemical stability, and a two-dimensional (2D) structure, making MoS2 a very versatile field-effect device material. Herein, we characterize MoS2 and utilize a photo-responsive I–V technique for extracting the energy distribution of the bulk traps in multi-layer MoS2 field effect transistors (FET). This method uses the differential ideality factor in both dark and light conditions. The differential ideality factor enables the efficient quantitative extraction of the device trap density by considering the nonlinear characteristics of the subthreshold region (V ON < V GS < V T). To accurately differentiate between the sub-bandgap traps and the interface traps near the conduction band, near-infrared light (λ= 1530 nm) optical illumination was used for the light state characterization. The bulk trap densities under dark state and light state conditions were derived for multi-layer (7-layer and 9-layer) MoS2 FET channels, and the influence of light illumination and overall multi-layer thickness on the bulk trap density was confirmed. The accurate extraction of the trap density enables the design of MoS2 FETs with long-term stability and high optoelectronic performance.

Ostwald ripening inhibition by a bipolar ligand achieves long-term-reaction and scalable synthesis of ultra-stable CsPbX3 perovskite quantum dots towards LEDs

All-inorganic perovskite quantum dots (PeQDs) hold immense potential for use in light-emitting diodes (LEDs) due to their excellent optoelectronic properties. However, the scalable synthesis and poor stability have severely hindered their application. Here, we solved both the two issues with “one stone”, namely a bipolar ligand 3-(N,N-dimethyloctadecylammonio) propane sulfonate (ASC18). ASC18 contains a positively charged quaternary ammonium group and a negatively charged sulfonic group, which enables for long-term reaction and gram-level synthesis of PeQDs with outstanding morphology, crystallinity, and optical properties. Density functional theory calculations and experimental studies show that these merits arise from the inhibition of Ostwald ripening by ASC18 due to their simultaneous interaction with undercoordinated Br– and Pb2+ via a bidentate binding mode. Furthermore, ASC18 capped PeQDs present significantly improved stabilities against air, UV irradiation, heat, and polar solvent. Finally, both electroluminescent LEDs and down-conversion white LEDs fabricated with our PeQDs show significant operational stability. This presents a trustworthy avenue to obtain high-quality PeQDs for their practical applications.

Multifunctional buried interface engineering via phenyl-phosphonic acid for efficient and stable SnO2-based planar perovskite solar cells

Tin dioxide (SnO2) is widely used as an electron transport layer (ETL) in efficient and stable perovskite solar cells (PSCs) due to its excellent optoelectronic properties and low-temperature solution preparation process. However, SnO2 ETLs fabricated by the conventional solution method have many defects, among which Sn dangling bonds (i.e., oxygen vacancies) are particularly prominent. Herein, a simple buried interface engineering is employed to introduce phenyl-phosphinic acid (PPA) into the surface of SnO2 film for the preparation of highly efficient PSCs. A series of test results have shown that the phosphate group (PO) in PPA can not only passivate oxygen vacancy defects on the surface of SnO2, but also improve the film-forming quality of the upper perovskite, thereby exhibiting better photoelectric conversion efficiency (PCE) and stability. Ultimately, the optimized device achieves a maximum PCE of 22.81 %, an improvement of about 15 % over the control device (19.82 %). Meanwhile, the nonencapsulated device based on SnO2-PPA ETL shows much better storage and light stability than the control SnO2.

Improved Efficiency in WSe2 Solar Cells Using Amorphous InOx Heterocontacts.

van der Waals (vdW) layered materials have been shown to have excellent optoelectronic properties relevant to photovoltaics. Despite their promise, the demonstrated efficiencies of vdW material solar cells remain low and are seldom supported by statistics or spectral quantum efficiency analysis. In this study, we utilize a p-type WSe2 absorber, forming a solar cell with a transparent front InOx electron contact, and a rear Pd reflector/hole contact. We fabricate multiple devices providing statistics for 10 devices with an average 1 sun conversion efficiency above 5%, among which a champion efficiency of 6.37% is achieved. This is the highest AM 1.5G 1 sun efficiency reported for a vdW material solar cell, with a current density supported by external quantum efficiency analysis. This cell is also shown to have near unity quantum efficiency around λ = 600 nm. This work provides support to vdW materials being considered as serious candidates for future thin-film solar cells.

D/A heterojunction photocatalysts interspersed onto biochar to couple photocatalysis and adsorption for visible light-responsive efficient removal of pollutants

Phenol has various applications in industry, due to its hazardousness, solubility, and volatility, it persists in water and poses a risk to human health. People are excited by the progress of photodegradation technology that facilitates water pollution treatment. The effect of side-chain engineering is proven to enhance photodegradation performance by improving optoelectronic properties. Therefore, here is a strategy that introduces functional groups to change the electron cloud density, achieving excellent optoelectronic properties evidenced by efficient exciton dissociation, separation, and fine-tuned energy level. Subsequently, by coupling of photocatalysis and adsorption, the donor/acceptor (D/A) heterojunction photocatalysts (PBDB-T: BTTIC-TT, PBDB-T: BTTIC-Ph) are designed via loading on coconut-shell carbon to process phenol. The results indicate that the champion photocatalyst PBDB-T: BTTIC-TT possesses superior optoelectronic properties, which can be attributed to the stronger electron-withdrawing ability of thieno[3,2-b]thiophene than benzene. Consequently, the synergistic efficiency of adsorption and photocatalysis of phenol (10, 20 mg/L) are removed within 10 mins over 90 % which is still valid after twenty cycles. Surprisingly, a high concentration of phenol (100 mg/L) also exhibited excellent removal efficiency of over 80 % within 60 min.

Vertical Barrier Heterostructures for Reliable and High-Performance Self-Powered Infrared Detection.

With their fascinating properties, emerging two-dimensional (2D) materials offer innovative ways to prepare high-performance infrared (IR) detectors. However, the current performance of 2D IR photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, sharply raised contact resistance, and deteriorated metal conductivity at nanoscale. Here, we introduce a vertical barrier heterojunction with a structure of PtSe2/GaAs that combines the excellent optoelectronic properties of transition metal sulfides with topological semi-metals, which allows for an adjustable bandgap and high carrier mobility. The heterojunction was fabricated using the wet transfer method. The heterostructures show significant rectification behaviors and photovoltaic effects, which allow it to operate as a self-driven photodetector at zero bias. The photoresponse parameters at 850 nm with zero bias voltage are 67.2 mA W-1, 6.7 × 1012 Jones, 9.8%, 3.8 × 105, 164 μs, and 198 μs for the responsivity, specific detectivity, external quantum efficiency, Ilight/Idark ratio, rise time, and fall time, respectively. Moreover, the heterojunction is highly sensitive to a wide spectral band from ultraviolet to near-infrared (360-1550 nm). At the same time, this heterostructure demonstrates significant potential for applications in IR polarized light detection and room-temperature high-resolution IR imaging. The excellent properties of the heterojunction make it well-suited for high-performance, self-powered IR detection.

Heating revival of Cs3MnBr5 for anti-counterfeiting and large-area flexible X-ray imaging

Cesium manganese bromide metal halide has great potential in the field of X-ray imaging and anti-counterfeiting due to its excellent optoelectronic properties. Here, Cs3MnBr5 was successfully prepared by a simple method. Uniquely a novel phenomenon based on H2O induced color change was discovered, Cs3MnBr5 can recover from aqueous solution more than 10 times under heating, which can be used in fluorescent anti-counterfeiting applications. Furthermore, Cs3MnBr5@PDMS, prepared by the PDMS composite strategy, has been demonstrated to exhibit a stability that is 20 times greater than that of Cs3MnBr5. Simultaneously, the light yield of Cs3MnBr5 is evaluated to be 21688 photons/MeV. Furthermore, it has been successfully applied in non-destructive detection and biological imaging and the spatial resolution can be restored to 10 lp mm−1.

In Situ PL Probes the Effect of 2D SnSe Nanosheets on the Crystallization Process of CsPbI2Br Perovskite Solar Cells.

Reducing defects in the active layer is important for improving the crystalline quality of all-inorganic perovskite solar cells (PSCs). Exploring novel additives is one of the most promising approaches to minimize active layer defects. In this work, two-dimensional (2D) SnSe nanosheets with excellent optoelectronic properties are prepared using an ultrasonic exfoliation method. The prepared 2D SnSe nanosheets are introduced into a CsPbI2Br precursor, which reduces the defect formation at grain boundaries and enhances the crystallinity of CsPbI2Br perovskites. We use the in situ photoluminescence (PL) technique to investigate the role of 2D materials in the crystallization process. The results show that SnSe nanosheets primarily shorten the grain boundary merging time and reduce the defect generation during the grain boundary merging stage, thereby regulating the crystallization of perovskite. In addition, SnSe nanosheets passivate uncoordinated Pb atoms at grain boundaries by Se atoms, further reducing the defect density in perovskite. As a result, PSCs exhibit a higher power conversion efficiency (PCE) of 14.24% and a Voc of 1.22 V. This study highlights the role of 2D materials in enhancing the crystalline quality and PCE of PSCs.

Theoretical Study on Optoelectronic Properties of 1,4-Dithiazole-5,10-dihydrophenazine and Its B ← N-Fused Derivatives.

Recently, Liu et al. reported 1,4-dithiazole-5,10-dihydrophenazine (DTDHP) and its B ← N-fused derivative (DTHDHP-BF2), which were expected to show excellent optoelectronic properties (Angew. Chem. Int. Ed. 2022, 61, e202205893). However, their charge-transport performance and luminescence emission mechanisms have not been revealed. In this work, we used density functional theory (DFT) calculations to investigate the optoelectronic properties of DTDHP and DTHDHP-BF2 and analyzed the influence of the introduction of -BF2 on the basic parameters governing charge transport and injection in detail. Our calculation results showed that adding -BF2 could stabilize the frontier molecular orbitals and decrease the reorganization energies associated with electron transport due to the formation of B ← N bonds, and the intermolecular electronic couplings are greatly enhanced owing to the strong intermolecular F···H interactions. Based on the master equation coupled with the Marcus-Hush electron transfer theory, we theoretically predicted the charge transport properties of DTDHP and DTHDHP-BF2. The optimum hole mobility (3.87 cm2 V-1 S-1) and electron mobility (1.52 cm2 V-1 S-1) of DTHDHP-BF2 are, respectively, 3 and 9 times as high as the corresponding optimum values of compound DTDHP. Moreover, the assignments of multiple fluorescence bands in the experiment were confirmed by time-dependent density functional theory (TDDFT) calculations. The simulated emission spectra indicate that the experimental fluorescence maxima at 687 nm originates from the S1 → S0 transition of the double proton transfer phototautomer (T2H) of DTDHP, and the shoulder peak at ∼660 nm may be related to the excited-state single-proton transfer phototautomer (T1H); for DTHDHP-BF2, the experimental fluorescence maxima at 687 nm should be attributed to normal Stokes shifted emission, and the shifted fluorescence with a peak at 751 nm originates from the emission of the photodissociation product of DTHDHP-BF2.

Optimizing etching depth for ultra-high brightness green micro-LED display development

In recent years, micro-light-emitting diode (micro-LED) displays have attracted much attention due to their high brightness, low power consumption, long lifetime, and fast response. It is considered to have the potential to revolutionize the development direction of next-generation visual display technology. However, the development of micro-LED displays faces numerous issues, primarily due to etching processes for pixel array manufacturing, which cause sidewall damage and decreased photoelectric efficiency. Specifically, these issues are particularly serious when preparing small-sized high-resolution displays. In this work, we effectively overcame the above-mentioned problems by only etching the electron barrier during the preparation process of pixel arrays. The prepared micro-LED display exhibits excellent optoelectronic properties, with the highest brightness and current efficiency reaching 1.66 × 106 nits and 104 cd/A, respectively. The method provides a feasible idea for preparing high-performance micro-LED displays.

β-ketoenamine-linked covalent organic frameworks ultrathin film for transparent supercapacitors with enhanced charge storage capability

With the development of electronic products toward optical transparency and intelligent portability, transparent supercapacitors (TSCs) have been considered as one of the ideal and efficient power sources. However, it is still a challenge to explore covalent organic frameworks (COFs) based transparent conductive electrodes (TCEs) with high photoelectric property and capacitive activity. Herein, β-ketoenamine DqTp (DAAQ-TFP, DAAQ = 2,6-diaminoanthraquinone, and TFP = 1,3,5-triformylphluroglucinol) COFs ultrathin films are synthesized for TCEs through the Schiff base reaction of DAAQ and TFP. The DqTp ultrathin films fully expose the redox-active anthraquinone moieties, shorten the ion/electron transport path, accelerate the transport and diffusion rate, and thus enhance charge storage capability. DqTp-1 TCEs possess the excellent optoelectronic property with optical transmittance (T550 nm) of 69.46%, sheet resistance (Rs) of 7.45 Ω sq−1, and remarkable areal capacitance (CA) of 355.67 μF cm−2. The corresponding asymmetric DqTp-1//PANI TSCs (T550 nm = 58.06%) yield a high CA of 64.55 μF cm−2 at 3 μA cm−2 and have a maximum areal energy density of 0.015 μWh cm−2 at 1.95 μW cm−2. After 5000 cycles, the capacitance retention is 96.9%. This work provides key insights into the design and synthesis of transparent redox-active COFs-based TSCs with excellent photoelectric property and enhanced charge storage capability.

Interfacial linkage modulated amorphous molybdenum sulfide/bismuth halide perovskite heterojunction for enhanced visible-light-driven photocatalytic hydrogen evolution

Photocatalytic hydrogen evolution is a promising approach for direct solar-to-fuel conversion. Although significant research efforts have been put on the development of lead-free metal halide perovskites to reach excellent optoelectronic properties, their rational design for efficient heterojunction photocatalytic systems still poses challenges. Here, we report a new strategy to tailor the interface of hybrid tri(dimethylammonium) hexaiodobismuthate (DMA3BiI6) and amorphous molybdenum sulfide (a-MoSx) heterojunctions. Specifically, a-MoSx was prepared with abundant apical S2– or bridging S22– ligands to allow coupling with DMA3BiI6 via an interfacial Mo–S–Bi linkage. The as-obtained heterostructures were found to show an improved visible-light-driven photocatalytic hydrogen evolution in hydroiodic acid splitting under mild conditions reaching a superior hydrogen evolution rate of around 750 µmol g−1 h−1 and an apparent quantum efficiency (AQE) of 13.0 % at 420 nm. The high activity was kept after a long-term performance test for 3 days.

Integrated Bionic Human Retina Process and In‐Sensor RC System Based on 2D Retinomorphic Memristor Array

AbstractThe rapid development of machine vision has put forward higher requirements for image perception and visual learning systems. However, limited by the von Neumann bottleneck, traditional artificial vision systems rely on complex optical and circuit designs, and the separate distribution of sensors, memory, and computing modules results in high energy consumption and high latency. Memristor‐based reservoir computing (RC) system with integrated sensing and memory functions provides a solution to effectively improve the computational efficiency of artificial vision networks. Here, a complete artificial visual recognition system based on in‐sensor RC is developed by combining the excellent optoelectronic synaptic properties of 2D WS2 memristor array. Through effectively regulating the conductance of memristors by light or electrical stimulation, image information is converted into high‐dimensional information in the reservoir layer, and the classification can be completed by simple training, significantly reducing the training complexity and cost consumption. With this system, an effective recognition of hand‐written numbers with an accuracy of 88.3% is demonstrated, and a 100% recognition of traffic signals of different colors is achieved. The proposed in‐sensor RC system advances the development and application of artificial vision recognition, paving the way for efficient machine learning and neuromorphic vision systems.

Co-Cation Engineering via Mixing of Acetamidinium and Rubidium in FASnI3 for Tin Perovskite Solar Cells to Attain 14.5% Efficiency.

Tin perovskite solar cells (TPSCs) were developed by adding the co-cations acetamidinium (AC) and rubidium (Rb) in varied proportions based on the FASnI3 structure (E1). We found that adding 10% AC and 3% Rb can optimize the device (E1AC10Rb3) to attain an efficiency of power conversion of 14.5% with great shelf- and light-soaking stability. The films at varied AC and Rb proportions were characterized using XPS, SEM, AFM, GIWAXS, XRD, TOPAS, TOF-SIMS, UV-vis, PL, TCSPC, and femtosecond TAS techniques to show the excellent optoelectronic properties of the E1AC10Rb3 film in comparison to those of the other films. AC was found to have the effect of passivating the vacancy defects on the surface and near the bottom of the film, while Rb plays a pivotal role in passivating the bottom interface between perovskite and PEDOT:PSS. Therefore, the E1AC10Rb3 device with a band gap of 1.43 eV becomes a promising candidate as a narrow band gap device for tandem lead-free perovskite solar cell development.

Influence of Graphene on Sheet Resistivity and Urbach Enery of Nano TiO<sub>2</sub> for DSSC Electrode

Importance of renewable energy cannot be over emphasized. Titanium IV oxide (TiO<sub>2</sub>) is the most suitable semiconductor for dye sensitized solar cell (DSSC) due to its chemical stability, non toxicity and excellent optoelectronic properties. In this research TiO<sub>2</sub> is coated on graphene to enhance its charge transport aiming to reduce recombination which is a main set back in DSSCs. undestanding graphene- TiO<sub>2 </sub>contact is therefore essential for DSSC application. TiO<sub>2</sub> thin films were deposited on single layer graphene (SLG) as well as on flourine tin oxide (FTO) using doctor blading technique. The films were annealed at rates of 2°C /min and 1°C/min up to a temperature of 450°C followed by sintering at this temperature for 30 minutes. Four point probe SRM-232 was used to measure sheet resistance of the samples. The film thickness were obtained from transmittance using pointwise unconstrained minimization approximation (PUMA). UV –VIS spectrophotometer was employed to measure transmittance. Resistivity of TiO<sub>2</sub> on both FTO and Graphene were of order 10<sup>-4</sup> Ωcm. However, TiO<sub>2</sub> annealed on graphene matrix exhibited a slightly lower resistivity 5.6 x10<sup>-4</sup> Ωcm as compared to 6.0x10<sup>-4 </sup>Ωcm on FTO. Optical transmittance on visible region was lower for TiO<sub>2</sub> on FTO than on SLG, 71.48% and 80.11% respectively. Urbach energy (Eu) for weak absorption region decreased with annealing rate. Urbach energies for 1°C/min TiO<sub>2 </sub>on FTO and SLG were 361 meV and 261meV respectively. This was used to account for decrease of disoders of films due to annealing. A striking relation between sheet resistivity and urbach was reported suggesting SLG as a suitable candidate for photoanode of a DSSC.

One-Step Hydrothermal Deposition of AgSbS2-xSex Thin Films for Solar Cell Applications.

AgSbS2-xSex is a promising light-harvesting material for thin film solar cells, characterized by nontoxicity, high chemical stability, and excellent optoelectronic properties. However, the complex chemical composition of AgSbS2-xSex poses significant challenges to thin film preparation, giving rise to an intensive dependence on multi-step preparation methods. Herein, a hydrothermal method is developed for depositing AgSbS2-xSex films and achieves one-step preparation of this kind of thin film materials for the first time. This method can provide sufficient energy for atomic nucleation and adsorption on the substrate surface to promote nuclei aggregation and grow into films. Meanwhile, it achieves control of the chemical kinetics of the deposition solution by introducing EDTA-2Na as an additive and suppressing the enrichment of Ag2Se impurities at the substrate interface. As a result, a high-purity AgSbS2-xSex film with compact and flat morphology is prepared and assembled into solar cells. The device delivers a power conversion efficiency of 3.04% under standard illumination, which is currently the highest efficiency for AgSbS2-xSex solar cells fabricated by the one-step method. This study provides a facile and promising method for the controllable preparation of high-quality AgSbS2-xSex thin films and promoting their application in solar cells.