Excellent Detectivity Research Articles

Highly stable and self-powered ultraviolet photodetector based on Dion-Jacobson phase lead-free double perovskite

Metal halide perovskite materials present a wide array of opportunities for the development of high-performance optoelectronic devices, owing to their outstanding photoelectric properties. Compared with the lead-containing perovskites, stable and non-toxic organic-inorganic hybrid perovskites exhibit enhanced potential for future commercial applications. In this work, we developed a self-powered UV photodetector based on 2D Dion−Jacobson (DJ) phase lead-free double perovskite HAAg0.5Bi0.5Br4 (HA2+ = histammonium) perovskite with an on-off ratio up to 2.66 × 106, excellent specific detectivity of 6 × 1012 Jones, and response speed of 1.32 ms/118.4 μs. The light intensity related pyro-phototronic effect on 2D perovskite is thoroughly investigated. Temperature and light detection are realized through multi-energy coupling, which greatly improves the detection performance. Coupled pyro-phototronic current is calculated nearly 75 folds higher than that from the photoelectronic merely. As-prepared photodetector film shows excellent stability in normal environment, maintaining a value of 90 % to the initial performance after 500 cycles and 90 days. This work provides a new self-powered, stable and non-toxic candidate for the future UV photodetectors.

Investigating UV photodetector capabilities of Pd-functionalized NiO thin films with interdigitated Pt electrodes

In this study, Palladium functionalized NiO thin films (Pd/NiO) were successfully deposited using a sputtering technique for the photodetector application. FESEM and EDX analysis were performed to confirm the morphology and the presence of constituent elements in the Pd/NiO films. The defect states and surface chemistry were analyzed using XPS, and PL measurements. The Pd/NiO thin film exhibited excellent responsivity (∼ 62 mA/W) and detectivity (∼ 31.7 × 106 Jones) at a low power density of 200 µW/cm2 in the UV range (∼ 355 nm). Additionally, the low Noise Equivalent Power (NEP) of ∼ 1.78 × 10-9 WHz−1/2 at 200 μW indicates the Pd/NiO photodetector capability to effectively detect light signals even at low optical power for various applications.

Polarization‐Sensitive Self‐Powered Photodetector Based on Anisotropic/Isotropic ReS2/SnSe2 Van der Waals Heterojunction

AbstractPolarization‐sensitive photodetectors have garnered significant interest due to their promising applications in navigation, remote sensing, and optical communication. However, conventional polarized light detectors relying on optical filters face challenges due to intricate fabrication and calibration procedures. While structures based on in‐plane anisotropic 2D materials have the potential to offer viable solutions for polarization detection, achieving both low power consumption and high performance remains challenging. Herein, a self‐powered anisotropic/isotropic ReS2/SnSe2 van der Waals (vdWs) heterojunction detector with high‐performance features is constructed. This device exhibits outstanding photovoltaic (PV) performance across a wide spectral range from 405 to 850 nm without bias, featuring excellent responsivity (0.966 A W−1) and specific detectivity (1.47 × 1010 Jones) under 650 nm laser illumination. Moreover, benefiting from the built‐in electric field that promotes carrier separation and extremely low dark current, the device shows fast response time (230/240 µs) with an on/off ratio of up to 104. Furthermore, the ReS2/SnSe2 photodetector demonstrates exceptional polarization encoding performance, with a polarization ratio of 1.56 under 650 nm illumination, opening up new possibilities in optical communication technology development. This research provides a novel and viable option for developing energy‐efficient and high‐performance polarization‐sensitive detectors.

Nitrogen-Doped 3D-Graphene Advances Near-Infrared Photodetector for Logic Circuits and Image Sensors Overcoming 2D Limitations.

The limitations of two-dimensional (2D) graphene in broadband photodetector are overcome by integrating nitrogen (N) doping into three-dimensional (3D) structures within silicon (Si) via plasma-assisted chemical vapor deposition (PACVD) technology. This contributes to the construction of vertical Schottky heterojunction broad-spectrum photodetectors and applications in logic devices and image sensors. The natural nanoscale resonant cavity structure of 3D-graphene enhances photon capture efficiency, thereby increasing photocarrier generation. N-doping can fine-tune the electronic structure, advancing the Schottky barrier height and reducing dark current. The as-fabricated photodetector exhibits exceptional self-driven photoresponse, especially at 1550 nm, with an excellent photoresponsivity (79.6 A/W), specific detectivity (1013 Jones), and rapid response of 130 μs. Moreover, it enables logic circuits, high-resolution pattern image recognition, and broadband spectra recording across the visible to near-infrared range (400-1550 nm). This research will provide new views and technical support for the development and widespread application of high-performance semiconductor-based graphene broadband detectors.

Heterogeneous integration photoferroelectrics for self-powered photoelectric detectors

The anomalous photovoltaic effect inherent in ferroelectric materials brings promising opportunities for self-powered photoelectric detectors. However, the photoelectric detection performances in photoferroelectrics are limited by the low photocurrent output due to the recombination and low separation ability of photogenerated carriers. This work proposes a heterogeneous integration technology for self-powered photoelectric detectors by designing a P-type/N-type/P-type (PNP) ferroelectric junction with sandwich structure, in which not only the photogenerated carrier separation is strengthened due to the enhanced polarization derived from the interface compressive stress, but also the carrier recombination is suppressed by the built-in electric field in the depletion layer. Thus, the photocurrent output in the PNP heterojunction is increased by more than seven times at 0 V bias compared with N-type ferroelectric film and exhibits excellent responsivity and detectivity. The temperature stability for repeatable time-resolved self-powered photocurrent demonstrates applicability in high temperature environments. This work provides a feasible strategy for high-performance self-powered photoelectric detectors by heterogeneous integration in photoferroelectrics, promoting ferroelectric photonic applications.

Polarization-sensitive and wide-spectrum photodetector from ultraviolet to near-infrared light based on 2D tellurium at room temperature

Two-dimensional (2D) materials have emerged as promising candidates for photodetection applications, due to their unique structural and optical properties. Herein, we conducted a comprehensive investigation of the 2D Te-based photodetector. The crystal structure, angle-resolved polarized Raman (ARPR) spectroscopy, and theoretical analysis demonstrate the in-plane lattice anisotropy of Te, underlining its suitability for polarization-dependent photodetection. Photocurrent measurements over a broad spectral range (from 365 to 1310 nm) reveal excellent photoresponse characteristics, with responsivity (Rλ) and detectivity (D*) values reaching up to 1189 A/W and 11.51 × 108 Jones, respectively, under 1064 nm illumination. Furthermore, the Te-based photodetector exhibits superior stability, retaining approximately 90 % of its initial performance after six months of ambient exposure. Polarization-sensitive photodetection experiments show significant dichroism ratios (up to 4.6 for 1064 nm illumination), emphasizing the potential of 2D Te for advanced polarization applications. The combination of the broad spectral response, high anisotropy ratio, and long-term stability positions 2D Te as a promising candidate for future photodetection technologies.

Multifunction realization in MoS2/WS2/h-BN heterojunction: Integrated self-powered high-performance photodetection, visualization, nonvolatile memory, and synaptic simulation

Nowadays, efficient performance, functional diversification, device miniaturization and systematic integration are the trends for developing new electronic information technology. However, photodetectors with only optoelectronic detection functions cannot satisfy the growing demands of the multifunction required in single devices. This paper presents a MoS2/WS2/h-BN van der Waals heterojunction device realizing multifunctional applications which integrated self-powered high-performance photodetection, visualization, nonvolatile memory, and synaptic simulation. The heterojunction achieves a high responsivity of 9.28 A/W, an excellent specific detectivity of 6.1×1012 Jones, a large external quantum efficiency of 2358 %, a considerable on/off ratio of 7×105 and an ultrafast response time of 0.6 μs at 1 V bias under 488 nm laser irradiation. Besides, the photodetector shows excellent photovoltaic characteristics with a short-circuit current of 0.22 μA and an open-circuit voltage of 0.34 V. Moreover, the device also shows a favorable optical response to 532 and 633 nm lasers. The device also realizes visualization and can be used as an imaging sensor. In addition, the device integrates nonvolatile memory function due to the charge storage effect of h-BN and h-BN/SiO2 interface. Furthermore, biological synaptic functions, such as the memory process, short- and long-term plasticity, and double pulse facilitation, are also successfully simulated. This work realizes the high-performance and multifunctional applications of MoS2/WS2/h-BN device based on a new strategy of utilizing h-BN as a heterojunction substrate.

2D Erucamide Crystal Synthesis and Ultraviolet Photodetection

Abstract2D organic crystals play a unique role in photodetection owing to their tunable detection wavelength, low manufacturing cost, compatibility with lightweight, and controllable synthesis. However, their detection wavelength range mainly encompasses the visible (Vis) and near‐infrared (NIR) spectra. Herein, 2D erucamide crystals are synthesized using nitrogen gas and methanol as raw materials without catalysts at room temperature under atmospheric pressure via laser processing. The synthesized 2D erucamide is demonstrated to be a promising broad bandgap organic semiconductor material. A UV photodetector made of 2D erucamide exhibited a responsivity as high as 145 mA W−1, a millisecond‐level response speed, and an excellent detectivity of 4.96 × 109 Jones. Furthermore, the synthesized erucamide showed an excellent UV–vis suppression ratio (R254 nm/R532 nm) of 59. The synthesis mechanism of erucamide via laser bubbling in liquids is proposed. Thermodynamically, the high temperature of the bubbles is beneficial for nitrogen and methanol decomposition. Kinetically, rapid bubble quenching facilitates final product formation. This accomplishment represented the pioneering utilization of lasers in converting nitrogen gas into organic compounds while introducing 2D erucamide into the realm of organic UV photodetectors.

High stability of dark current enables stretchable near-infrared self-powered organic photodetectors

Ultra-flexible and stretchable organic photodetectors (s-OPDs) sensitive in the near-infrared (NIR) region hold great potential for wearable health monitoring with excellent physiological signal and skin conformability. However, the development of OPDs that combines NIR sensitivity, low power consumption, low cost, simple fabrication structure, and good mechanical properties is still challenging and has not been well explored. In this work, we report a self-powered s-OPD with a simple fabrication structure used for organic solar cells and a detectivity of more than 1 × 1012 Jones (corrected by noise current) in the NIR region at 10% tensile strain and short response time (2.46 μs), representing state-of-the-art performances. Reducing energetic disorders other than discrete traps in photoactive layers is more crucial to further reduce the dark current at zero bias. The dark current of the OPDs exhibits higher mechanical stability than photocurrent due to the slower degradation of the parallel resistance than the series resistance under tensile strain. The higher stability of dark current enables the s-OPDs as a stretchable organic photoplethysmogram heart rate sensor, showing excellent detectivity under 30% strain or 800 stretching–release cycles at 10% strain, indicating the great potential for application in wearable optoelectronics.

Sensitive organic/inorganic polarized photodetectors enhanced by charge transfer with image sensing capacity.

Organic photodetectors (OPDs) have attracted increasing attention in the future wearable sensing and real-time health monitoring, due to their intrinsic features including the mechanical flexibility, low-cost processing and cooling-free operations; while their performances are lagging as the results of inferior carrier mobility and small exciton diffusion coefficient of organic molecules. Graphene exhibits the great photoresponse with wide spectral bandwidth and high response speed. However, weak light absorption and the absence of a gain mechanism have limited its photoresponsivity. Here, we report a sensitive organic/inorganic phototransistor with fast response speed by coupling PTCDA organic single crystal with the monolayer graphene. The long range exciton diffusion in highly ordered π-conjugated molecules, efficient exciton dissociation and charge transfer at the PTCDA/graphene heterointerfaces, and the high mobility of graphene enable a high responsivity (8 × 104A/W), short response time (220 µs) and excellent specific detectivity (>1011 Jones), which is higher than the level of commercial on-chip device. This interfacial photogating effect is verified by the high-resolution spatial photocurrent mapping experiment. In addition, the high sensitivity to polarization is clear and the ultrahigh photoconductive gain enables a near-infrared (NIR) response for 980 and 1550 nm. Finally, high-speed visible and NIR imaging applications are successfully demonstrated. This work suggests that high quality organic single crystal/graphene is a promising platform for future high performance optoelectronic systems and imaging applications.

Two-dimensional molybdenum ditelluride waveguide-integrated near-infrared photodetector

Low-cost, small-sized, and easy integrated high-performance photodetectors for photonics are still the bottleneck of photonic integrated circuits applications and have attracted increasing attention. The tunable narrow bandgap of two-dimensional (2D) layered molybdenum ditelluride (MoTe2) from ∼0.83 to ∼1.1 eV makes it one of the ideal candidates for near-infrared (NIR) photodetectors. Herein, we demonstrate an excellent waveguide-integrated NIR photodetector by transferring mechanically exfoliated 2D MoTe2 onto a silicon nitride (Si3N4) waveguide. The photoconductive photodetector exhibits excellent responsivity (R), detectivity (D*), and external quantum efficiency at 1550 nm and 50 mV, which are 41.9 A W−1, 16.2 × 1010 Jones, and 3360%, respectively. These optoelectronic performances are 10.2 times higher than those of the free-space device, revealing that the photoresponse of photodetectors can be enhanced due to the presence of waveguide. Moreover, the photodetector also exhibits competitive performances over a broad wavelength range from 800 to 1000 nm with a high R of 15.4 A W−1 and a large D* of 59.6 × 109 Jones. Overall, these results provide an alternative and prospective strategy for high-performance on-chip broadband NIR photodetectors.

Schottky infrared detectors with optically tunable barriers beyond the internal photoemission limit

Internal photoemission is a prominent branch of the photoelectric effect and has emerged as a viable method for detecting photons with energies below the semiconductor bandgap. This breakthrough has played a significant role in accelerating the development of infrared imaging in one chip with state-of-the-art silicon techniques. However, the performance of these Schottky infrared detectors is currently hindered by the limit of internal photoemission; specifically, a low Schottky barrier height is inevitable for the detection of low-energy infrared photons. Herein, a distinct paradigm of Schottky infrared detectors is proposed to overcome the internal photoemission limit by introducing an optically tunable barrier. This device uses an infrared absorbing material-sensitized Schottky diode, assisted by the highly adjustable Fermi level of graphene, which subtly decouples the photon energy from the Schottky barrier height. Correspondingly, a broadband photoresponse spanning from ultraviolet to mid-wave infrared is achieved, with a high specific detectivity of 9.83×1010 cm Hz1/2 W-1 at 2,700nm and an excellent specific detectivity of 7.2×109 cm Hz1/2 W-1 at room temperature under blackbody radiation. These results address a key challenge in internal photoemission and hold great promise for the development of the Schottky infrared detector with high sensitivity and room temperature operation.

Sensitive Organic Photodetectors With Spectral Response up to 1.3µm Using a Quinoidal Molecular Semiconductor.

Detecting short-wavelength infrared (SWIR) light has underpinned several emerging technologies. However, the development of highly sensitive organic photodetectors (OPDs) operating in the SWIR region is hindered by their poor external quantum efficiencies (EQEs) and high dark currents. Herein, the development of high-sensitivity SWIR-OPDs with an efficient photoelectric response extending up to 1.3µm is reported. These OPDs utilize a new ultralow-bandgap molecular semiconductor featuring a quinoidal tricyclic electron-deficient central unit and multiple non-covalent conformation locks. The SWIR-OPD achieves an unprecedented EQE of 26% under zero bias and an even more impressive EQE of up to 41% under a -4V bias at 1.10µm, effectively pushing the detection limit of silicon photodetectors. Additionally, the low energetic disorder and trap density in the active layer lead to significant suppression of thermal-generation carriers and dark current, resulting in excellent detectivity (Dsh *) exceeding 1013 Jones from 0.50 to 1.21µm and surpassing 1012 Jones even at 1.30µm under zero bias, marking the highest achievements for OPDs beyond the silicon limit to date. Validation with photoplethysmography measurements, a spectrometer prototype in the 0.35-1.25µm range, and image capture under 1.20µm irradiation demonstrate the extensive applications of this SWIR-OPD.

Fabrication of [001]‐Oriented FAPbI3‐Based Photodetector With Excellent Air Stability Via Green Anti‐Solvent Additive Engineering

AbstractFormamidinium lead triiodide (FAPbI3) exhibits excellent thermal and chemical stability, making it a suitable alternative for methylammonium lead triiodide (MAPbI3) in high‐performance photodetectors. However, FAPbI3 faces the challenge of transforming from the metastable photoactive black phase α‐FAPbI3 to the photoinactive yellow phase δ‐FAPbI3 at room temperature. This phase transition is accelerated in humid atmospheric conditions. To realize high‐performance FAPbI3‐based photodetectors, it is crucial to form stable and highly crystalline phase‐pure α‐FAPbI3 films. Herein, is fabricate highly stable and crystalline FAPbI3 films and photodetectors through anti‐solvent additive engineering (AAE) using a green anti‐solvent (isopropanol, IPA) and an organic spacer (phenethylammonium iodide, PEAI). It is found that PEAI‐AAE treatment induced [001]‐preferred orientation growth in FAPbI3 films, and passivated defects within the crystal. The photodetectors based on PEAI‐AAE‐treated FAPbI3 film exhibits a fast response time of 485 µs/525 µs (rise time/fall time), high responsivity of 24.89 A W−1, and excellent specific detectivity of 1.56 × 1013 Jones. Moreover, the PEAI‐AAE‐treated FAPbI3 photodetector retained over 80% of its initial performance even after exposure to ambient air for over 720 h, demonstrating excellent long‐term stability. This study provides a green processing method that paves the way for future commercialization of perovskite‐based optoelectronic devices.

High-Performance Organic Narrow Dual-Band Circular Polarized Light Detection for Encrypted Communications and Color Imaging.

Conventional circularly polarized light (CPL) detectors necessitate several optical elements, posing difficulties in achieving miniature and integrated devices. Recently developed organic CPL detectors require no additional optical elements but usually suffer from low detectivity or low asymmetry factor (g-factor). Here, an organic CPL detector with excellent detectivity and a high g-factor is fabricated. By employing an inverted quasi-planar heterojunction (IPHJ) structure and incorporating an additional liquid crystal film, a CPL detector with an outstanding g-factor of 1.62 is developed. Unfavorable charge injection is effectively suppressed by the IPHJ structure, which reduces the dark current of the organic photodetector. Consequently, a left CPL detectivity of 6.16 × 1014 Jones at 640nm is realized, surpassing all of the latest photodiode-type CPL detectors. Adopting a liquid crystal film with adjustable wavelengths of selectively reflected light, the hybrid device achieves narrow dual-band CPL detection, varying from 530 to 640nm, with a half-maximum full width below 90nm. Notably, the device achieves excellent stability of 260 000 on/off cycles without attenuation. To the best of the authors' knowledge, all these features have rarely been reported in previous work. The CPL detector arrays are also demonstrated for encrypted communications and color imaging.

High‐Performance UV Photodetector via Energy Band Engineering and LSPR‐Enhanced Pyro‐Phototronic Effect in Au Decorated 2D‐PbI2/1D‐ZnO Heterojunction

AbstractUltraviolet (UV) photodetectors have attracted extensive attention in various applications, including aerospace, optical communication, and fire warning. However, the intrinsic coupling of high responsivity and fast response as well as imperfect interface transmission impede the further improvement of UV photodetector. Here, a high‐performance Au‐decorated PbI2/ZnO pn junction UV photodetector with a one‐dimensional (1D) and two‐dimensional (2D) interspersed structure is presented. The pyro‐phototronic effect and energy band engineering effect from the localized pn junction generated by the layered p‐type PbI2 nanosheets along the c‐axis of ZnO are coupled to modulate the separation and transport of photogenerated carriers. Furthermore, the localized surface plasmon resonance of Au nanoparticles produces transient thermal power to raise temperature fast to enhance pyroelectric current. The self‐powered Au@PbI2/ZnO photodetector displays a high responsivity of 0.21 A W−1, excellent detectivity of 7.9 × 1012 Jones, and fast response/recovery time of 25/31 ms, under the illumination of 325 nm light with the power density of 0.08 µW cm−2. This work offers an effective strategy for designing high‐performance next‐generation optoelectronic devices.

Transparent and conducting p-type (CuS)x:(ZnS)1-x thin films produced by thermal evaporation: An efficient broadband Si heterojunction photodiode

This study demonstrates the viability of the thermal evaporation method to produce transparent and highly conductive p-type (CuS)x:(ZnS)1-x thin films by achieving the highest conductivity value (1.4 × 103 S/cm) reported in this field to date. This places it in direct comparison with n-type transparent conductors. Analysis through X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) unveils nanocomposite structures comprising sphalerite ZnS, chalcocite Cu2S, and covellite CuS nanocrystals in the thin films. The study reveals that transmittance values at a wavelength of 550 nm vary from 84 % to 65 % based on the increasing CuS ratio, establishing thermal-evaporated (CuS)x:(ZnS)1-x thin films as promising candidates for p-type transparent electrodes.Moreover, p+-(CuS)0.49:(ZnS)0.54/n-Si heterojunction photodiodes were also produced.The heterojunction diode exhibited excellent photo-response characteristics in a wide range of wavelengths between 325 and 1170 nm at zero-bias.The responsivity value of the photodiode was as high as 1.44 A/W at the peak wavelength of 912 nm (9.45 mW/cm2) with a high Ion/Ioffratio of 1.45 × 104. Besides, it was shown to have excellent detectivity,response time, and external quantum efficiency (EQE) values corresponding to 2.62 × 1012Jones,8.45 µs, and 244 %, respectively. Most of these values are superior to those even in commercial-grade photodiodes.

Theoretical design of uncooled mid-infrared PbSe P+pBn+ barrier detectors

A novel uncooled mid-wavelength infrared (MWIR) P+pBn+ barrier detector based on epitaxial PbSe absorber layer on Ge substrate is theoretically investigated by finite element analysis in order to achieve optimal detection performance. The simulated results show that the P+pBn+ barrier architecture can further effectively reduce the room-temperature dark current to 4.45 mA cm−2 under −0.1 V bias, which is 12 times lower than a PbSe pBn+ unipolar barrier device in a previous study. Moreover, the P+pBn+ barrier architecture exhibits excellent responsivity and detectivity of 1.83 A W −1 and 3.23 × 1010 cm Hz1/2 W−1 at 3.8 μm, respectively. These results suggest that this P+pBn+ barrier detector based on natural MBE epitaxy technology could have potential in the emerging high-sensitivity and high-detectivity uncooled MWIR applications.

Scalable and cost-effective fabrication of high-performance self-powered heterojunction UV-photodetectors using slot-die printing of triple-cation lead perovskite coupled with triboelectric nanogenerators

The demand for continuous monitoring of ultraviolet (UV) radiation, which poses significant health risks, has grown significantly with the advent of the internet of things (IoT) for human health. The need for a self-powered system that does not rely on battery charging in environmental conditions has led to the exploration of triboelectric nanogenerators (TENGs) as a promising energy source for sensor systems. In this study, we present a fully printed UV photodetector (UV-PD) that is fabricated through scalable slot-die printing of either single-layer triple-cation mixed halide perovskite (TCMHP) or a heterojunction of TiO2/TCMHP on patterned fluorine-doped tin oxide (FTO). The integrated TENG generates the required energy from the tapping of Kapton to the FTO contact, making the device self-powered. Our self-powered PD exhibits an excellent responsivity and detectivity of 71.4 mA W−1 and 6.92 × 1010 Jones, respectively, under a 395 nm wavelength, significantly outperforming spin-coated TCMHP-based devices. We further optimized the performance of our integrated TENG-powered heterojunction TiO2/TCMHP UV-PD by fabricating sensors with groove spacings of 2, 3, 5, and 8 mm. The optimized device demonstrated an unprecedented responsivity, detectivity, and EQE% of 151.9 mA W−1, 1.29 × 1011 Jones, and 47.8%, respectively, under UV irradiation. Our work represents a significant step towards large-scale industrial flexible self-powered UV detection devices that can protect human health and safety. This study highlights the potential of scalable and cost-effective slot-die printing techniques for the industrial production of high-performance self-powered UV sensors, with significant implications for IoT-based health monitoring and environmental protection applications.

Air-stable self-powered photodetector based on TaSe2/WS2/TaSe2 asymmetric heterojunction with surface self-passivation

Two-dimensional (2D) transition metal dichalcogenides are highly suitable for constructing junction photodetectors because of their suspended bond-free surface and adjustable bandgap. Additional stable layers are often used to ensure the stability of photodetectors. Unfortunately, they often increase the complexity of preparation and cause performance degradation of devices. Considering the self-passivation behavior of TaSe2, we designed and fabricated a novel self-powered TaSe2/WS2/TaSe2 asymmetric heterojunction photodetector. The heterojunction photodetector shows excellent photoelectric performance and photovoltaic characteristics, achieving a high responsivity of 292 mA/W, an excellent specific detectivity of 2.43 × 1011 Jones, a considerable external quantum efficiency of 57 %, a large optical switching ratio of 2.6 × 105, a fast rise/decay time of 43/54 μs, a high open-circuit voltage of 0.23 V, and a short-circuit current of 2.28 nA under 633 nm laser irradiation at zero bias. Moreover, the device also shows a favorable optical response to 488 and 532 nm lasers. Notably, it exhibits excellent environmental long-term stability with the performance only decreasing ∼ 5.6 % after exposed to air for 3 months. This study provides a strategy for the development of air-stable self-powered photodetectors based on 2D materials.